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    CAPACITOR SEMICONDUCTOR SIM MODEL Search Results

    CAPACITOR SEMICONDUCTOR SIM MODEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    CAPACITOR SEMICONDUCTOR SIM MODEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10uF CAPACITOR

    Abstract: mems HDR1X FOOTPRINT PCB CAPACITOR 10uF HEADER hdr1*2 LIS302SG 1206 footprint Capacitor Semiconductor SIM Model
    Text: Bill of Materials Bill of Materials For PCB [STEVAL-MKI020V1] Designator Comment Footprint LibRef Description C1 C2 U1 JP1 JP2 100nF 10uF LIS302SG Header 12 Header 12 1206 2 C1206_POL Cap Semi C1206_POL Capacitor (Semiconductor SIM Model) HDR1X12 HDR1X12


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    PDF STEVAL-MKI020V1] 100nF LIS302SG HDR1X12 12-Pin 10uF CAPACITOR mems HDR1X FOOTPRINT PCB CAPACITOR 10uF HEADER hdr1*2 LIS302SG 1206 footprint Capacitor Semiconductor SIM Model

    Capacitor Semiconductor SIM Model

    Abstract: RESISTOR FOOTPRINT 1206 0805 footprint 12pin HEADER LIS344ALH HDR1X12 resistor 0805 Resistor 1206 footprint capacitor pol
    Text: Bill of Materials Bill of Materials For PCB [STEVAL-MKI015V1] Designator Comment Footprint LibRef Description C1 C2 U1 JP1 JP2 R1 R2 R3 100nF 10uF LIS344ALH Header 12 Header 12 0R 0R 0R 1206 2 C1206_POL Cap Semi C1206_POL Capacitor (Semiconductor SIM Model)


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    PDF STEVAL-MKI015V1] 100nF LIS344ALH HDR1X12 12-Pin Capacitor Semiconductor SIM Model RESISTOR FOOTPRINT 1206 0805 footprint 12pin HEADER LIS344ALH HDR1X12 resistor 0805 Resistor 1206 footprint capacitor pol

    Capacitor Semiconductor SIM Model

    Abstract: HDR1X12 RESISTOR FOOTPRINT 1206 resistor LIS244AL cap footprint RES 1206 0805 footprint 10uF CAPACITOR 1206 footprint
    Text: Bill of Materials Bill of Materials For PCB [STEVAL-MKI018V1] Designator Comment Footprint LibRef Description C1 C2 U1 JP1 JP2 R1 R2 R3 100nF 10uF LIS244AL Header 12 Header 12 0R 0R 0R 1206 2 C1206_POL Cap Semi C1206_POL Capacitor (Semiconductor SIM Model)


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    PDF STEVAL-MKI018V1] 100nF LIS244AL HDR1X12 12-Pin Capacitor Semiconductor SIM Model HDR1X12 RESISTOR FOOTPRINT 1206 resistor LIS244AL cap footprint RES 1206 0805 footprint 10uF CAPACITOR 1206 footprint

    0805 footprint

    Abstract: RESISTOR FOOTPRINT 1206 Capacitor Semiconductor SIM Model cap footprint 0805 Resistor footprint for resistor Capacitor 10uF footprint resistor 0805 capacitor pol HDR1X12
    Text: Bill of Materials Bill of Materials For PCB [STEVAL-MKI017V1] Designator Comment Footprint LibRef Description C1 C2 U1 JP1 JP2 R1 R2 R3 100nF 10uF LIS344AL Header 12 Header 12 0R 0R 0R 1206 2 C1206_POL Cap Semi C1206_POL Capacitor (Semiconductor SIM Model)


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    PDF STEVAL-MKI017V1] 100nF LIS344AL HDR1X12 12-Pin 0805 footprint RESISTOR FOOTPRINT 1206 Capacitor Semiconductor SIM Model cap footprint 0805 Resistor footprint for resistor Capacitor 10uF footprint resistor 0805 capacitor pol HDR1X12

    Untitled

    Abstract: No abstract text available
    Text: FXLP4555 1.8V / 3.0V SIM Card Power Supply and Level Shifter Features Description • •  Supports 1.8V or 3.0V SIM Cards  ESD Protection: 8kV Human Body Model, According to ISO-7816 Specifications   Supports Clock  5MHz  The FXLP4555 is a level-shifter analog circuit designed


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    PDF FXLP4555 ISO-7816 FXLP4555 ISO7816-3 IMT-2000/3G com/packaging/MLP16B com/packaging/3x3MLP16

    FXLP4555

    Abstract: sim card driver ic Capacitor Semiconductor SIM Model iso7816 sim JEDEC MO-220 3MM JEDEC MO-220 Sim card diagram
    Text: FXLP4555 1.8V / 3.0V SIM Card Power Supply and Level Shifter Features Description • •  Supports 1.8V or 3.0V SIM Cards  ESD Protection: 8kV Human Body Model, According to ISO-7816 Specifications   Supports Clock  5MHz The FXLP4555 is a level-shifter analog circuit designed


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    PDF FXLP4555 ISO-7816 ISO7816-3 MLP-16 ISO7816-ent com/packaging/MLP16B com/packaging/3x3MLP16 sim card driver ic Capacitor Semiconductor SIM Model iso7816 sim JEDEC MO-220 3MM JEDEC MO-220 Sim card diagram

    Untitled

    Abstract: No abstract text available
    Text: NCN6010 Product Preview Low Power Level Shifter The NCN6010 is a level shifter analog circuit designed to translate the voltages between a SIM Card and an external microcontroller. A built–in DC/DC converter makes the NCN6010 useable to drive any type of SIM card. The device fulfills the GSM 11.11 specification. The


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    PDF NCN6010 r14525 NCN6010/D

    SLVS244A

    Abstract: No abstract text available
    Text: TPS9125 5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999 D D D D D D D D Integrated SIM Supply and Level Shifters Selectable 5-V or 3-V SIM Supply Voltage 3-V to 5-V Level Shifters, Bidirectional for SIM Data Line


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    PDF TPS9125 SLVS244A TPS9125 SLVS244A

    sim gsm reader circuit diagram

    Abstract: No abstract text available
    Text: TPS9125 5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999 D D D D D D D D Integrated SIM Supply and Level Shifters Selectable 5-V or 3-V SIM Supply Voltage 3-V to 5-V Level Shifters, Bidirectional for SIM Data Line


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    PDF TPS9125 SLVS244A slvs244a TPS9125PWR SSYA008 SZZA017A sim gsm reader circuit diagram

    593c

    Abstract: sim card switch ic circuit diagram of sim 300 gsm module ISO7816-3 T1 sim 300 s2 capacitor 1 micro farad Electrolytic capacitor 74HC14 ISO7816 NCN6010 NCN6010DTB
    Text: NCN6010 SIM Card Supply and Level Shifter The NCN6010 is a level shifter analog circuit designed to translate the voltages between a SIM Card and an external microcontroller. A built–in DC/DC converter makes the NCN6010 useable to drive any type of SIM card. The device fulfills the GSM 11.11 specification. The


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    PDF NCN6010 NCN6010 r14525 NCN6010/D 593c sim card switch ic circuit diagram of sim 300 gsm module ISO7816-3 T1 sim 300 s2 capacitor 1 micro farad Electrolytic capacitor 74HC14 ISO7816 NCN6010DTB

    IR420

    Abstract: 593c GSM sim 300 module circuit diagram 74HC08* TSSOP14
    Text: Back NCN6010 SIM Card Supply and Level Shifter The NCN6010 is a level shifter analog circuit designed to translate the voltages between a SIM Card and an external microcontroller. A built–in DC/DC converter makes the NCN6010 useable to drive any type of SIM card. The device fulfills the GSM 11.11 specification. The


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    PDF NCN6010 r14525 NCN6010/D IR420 593c GSM sim 300 module circuit diagram 74HC08* TSSOP14

    593C

    Abstract: sim 300 s2 NCN6010DTBR2G ISO7816 NCN6010 NCN6010DTB NCN6010DTBG NCN6010DTBR2 capacitor 1 micro farad Electrolytic capacitor circuit diagram of sim 300 gsm module
    Text: NCN6010 SIM Card Supply and Level Shifter The NCN6010 is a level shifter analog circuit designed to translate the voltages between a SIM Card and an external microcontroller. A built−in DC−DC converter makes the NCN6010 useable to drive any type of SIM card. The device fulfills the GSM 11.11 specification. The


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    PDF NCN6010 NCN6010 NCN6010/D 593C sim 300 s2 NCN6010DTBR2G ISO7816 NCN6010DTB NCN6010DTBG NCN6010DTBR2 capacitor 1 micro farad Electrolytic capacitor circuit diagram of sim 300 gsm module

    Untitled

    Abstract: No abstract text available
    Text: NCN6010 SIM Card Supply and Level Shifter The NCN6010 is a level shifter analog circuit designed to translate the voltages between a SIM Card and an external microcontroller. A built-in DC-DC converter makes the NCN6010 useable to drive any type of SIM card. The device fulfills the GSM 11.11 specification. The


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    PDF NCN6010 NCN6010 NCN6010/D

    10 micro farad 25 v electrolytic capacitor

    Abstract: Capacitor Semiconductor SIM Model sim card controller ic 30 micro farad capacitor 6 kv TF card footprint PCB 593c ISO7816-3 NCN6010 NCN6010DTBG NCN6010DTBR2
    Text: NCN6010 SIM Card Supply and Level Shifter The NCN6010 is a level shifter analog circuit designed to translate the voltages between a SIM Card and an external microcontroller. A built-in DC-DC converter makes the NCN6010 useable to drive any type of SIM card. The device fulfills the GSM 11.11 specification. The


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    PDF NCN6010 NCN6010 NCN6010/D 10 micro farad 25 v electrolytic capacitor Capacitor Semiconductor SIM Model sim card controller ic 30 micro farad capacitor 6 kv TF card footprint PCB 593c ISO7816-3 NCN6010DTBG NCN6010DTBR2

    iso7816 sim

    Abstract: SIMCARD Schematic qfn16 socket ISO7816 NCN4555 NCN4555MNG NCN4555MNR2G circuit diagram of sim 300 gsm module
    Text: NCN4555 1.8V / 3V SIM Card Power Supply and Level Shifter The NCN4555 is a level shifter analog circuit designed to translate the voltages between a SIM Card and an external microcontroller or MPU. A built−in LDO−type DC−DC converter makes the NCN4555


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    PDF NCN4555 NCN4555 ISO7816-3 IMT-2000/3G QFN-16 488AK NCN4555/D iso7816 sim SIMCARD Schematic qfn16 socket ISO7816 NCN4555MNG NCN4555MNR2G circuit diagram of sim 300 gsm module

    Untitled

    Abstract: No abstract text available
    Text: NCN4555 1.8V / 3V SIM Card Power Supply and Level Shifter The NCN4555 is a level shifter analog circuit designed to translate the voltages between a SIM Card and an external microcontroller or MPU. A built−in LDO−type DC−DC converter makes the NCN4555


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    PDF NCN4555 NCN4555 ISO7816â 2000/3G 488AK NCN4555/D

    Untitled

    Abstract: No abstract text available
    Text: TXS4555 www.ti.com SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 1.8V/3V SIM Card Power Supply With Level Translator Check for Samples: TXS4555 FEATURES 1 • 3 NC 4 11 SIMCLK 10 GND 9 SIMRST NC I/O RST CLK 16 15 14 13 Note: The Exposed center thermal pad must be


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    PDF TXS4555 SBOS550B 50-mA 100mV ISO-7816-3 000-V A114-B) 16-Pin 12-Pin

    Untitled

    Abstract: No abstract text available
    Text: TXS4555 www.ti.com SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 1.8V/3V SIM Card Power Supply With Level Translator Check for Samples: TXS4555 FEATURES 1 • 3 NC 4 11 SIMCLK 10 GND 9 SIMRST NC I/O RST CLK 16 15 14 13 Note: The Exposed center thermal pad must be


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    PDF TXS4555 SBOS550B TXS4555

    iso7816 sim

    Abstract: ISO7816 NCN4555 NCN4555MNG NCN4555MNR2G circuit diagram of sim 300 gsm module
    Text: NCN4555 1.8V / 3V SIM Card Power Supply and Level Shifter The NCN4555 is a level shifter analog circuit designed to translate the voltages between a SIM Card and an external microcontroller or MPU. A built−in LDO−type DC−DC converter makes the NCN4555


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    PDF NCN4555 NCN4555 ISO7816-3 IMT-2000/3G QFN-16 488AK NCN4555/D iso7816 sim ISO7816 NCN4555MNG NCN4555MNR2G circuit diagram of sim 300 gsm module

    Untitled

    Abstract: No abstract text available
    Text: TXS4555 SBOS550A – FEBRUARY 2011 – REVISED MARCH 2011 www.ti.com 1.8V/3V SIM Card Power Supply With Level Translator Check for Samples: TXS4555 FEATURES 1 • 3 NC 4 11 SIMCLK 10 GND 9 SIMRST NC I/O RST CLK 16 15 14 13 Note: The Exposed center thermal pad must be


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    PDF TXS4555 SBOS550A TXS4555

    Untitled

    Abstract: No abstract text available
    Text: TXS4555 SBOS550A – FEBRUARY 2011 – REVISED MARCH 2011 www.ti.com 1.8V/3V SIM Card Power Supply With Level Translator Check for Samples: TXS4555 FEATURES 1 • 3 NC 4 11 SIMCLK 10 GND 9 SIMRST NC I/O RST CLK 16 15 14 13 Note: The Exposed center thermal pad must be


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    PDF TXS4555 SBOS550A TXS4555

    CPU08

    Abstract: HC05 M146805 M6805 M68HC05 M68HC08 MC68HC08KH12A high-frequency-response
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. MC68HC08KH12A Data Sheet M68HC08 Microcontrollers MC68HC08KH12A/D Rev. 1 3/2004 MOTOROLA.COM/SEMICONDUCTORS For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc.


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    PDF MC68HC08KH12A M68HC08 MC68HC08KH12A/D CPU08 HC05 M146805 M6805 M68HC05 M68HC08 MC68HC08KH12A high-frequency-response

    68HC08KH12

    Abstract: 68HC708KH12 CPU08 M146805 M6805 M68HC05 M68HC08 MC68HC Nippon capacitors
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. MC68HC08KH12/H REV. 1.0 68HC08KH12 68HC708KH12 Advance Information June 7, 1999 Semiconductor Products Sector For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc.


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    PDF MC68HC08KH12/H 68HC08KH12 68HC708KH12 68HC08KH12 68HC708KH12 CPU08 M146805 M6805 M68HC05 M68HC08 MC68HC Nippon capacitors

    mtp6n6

    Abstract: an1043 motorola AN1043 Spice Model for TMOS Power MOSFETs motorola superior 600 ssd MTP305SE MTP15N06E MTH13N50 MTP12P schematic circuit for computer ssd disk DK301
    Text: Q rd«r thlv docum ent MOTOROLA by AN1043/D SEMICONDUCTOR APPLICATION NOTE AN1043 Spice Model for TMOS Power MOSFETs Prepared by Charies-Edouard Cordonnier Power Products Application Engineer with the contribution of LAAS-CNRS Research Laboratory, R. Maimouni, H. Tranduc, P. Rossel, D. Allain and M. Napieralska


    OCR Scan
    PDF AN1043/D AN1043/D mtp6n6 an1043 motorola AN1043 Spice Model for TMOS Power MOSFETs motorola superior 600 ssd MTP305SE MTP15N06E MTH13N50 MTP12P schematic circuit for computer ssd disk DK301