nec eN8 capacitor
Abstract: qa solar 3722 9l 476 Tantalum Capacitor NEC TOKIN TANTALUM CAPACITORS nec jj8 nec gJ8 tantalum ca7 ne gj8 Samsung Tantalum Capacitor marking code je8
Text: CAPACITORS DATA BOOK 2005 Correct Use of Tantalum Chip Capacitors Be sure to read this before using NEC TOKIN Tantalum Capacitors. [Notes] ● Be sure to read "PRECAUTIONS FOR TANTALUM CAPACITOR USE" p56 - p66 before commencing circuit design or using the capacitor.
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D-81829
0622EDTM01VOL02E
nec eN8 capacitor
qa solar 3722 9l
476 Tantalum Capacitor
NEC TOKIN TANTALUM CAPACITORS
nec jj8
nec gJ8
tantalum ca7
ne gj8
Samsung Tantalum Capacitor
marking code je8
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an 17830
Abstract: C0603X7R500 MLCC 0805 MTBF C0603C0G500-100JNE C0603X7R500-102KNE C0603Y5V250-104ZNE AHA0236 C0805X7R500-102KNE 63E06 an 17830 a
Text: DOCUMENT NO. MLB-AK-K77 DATE 02.02.2007 WRITTEN CHECKED APPROVED / / / QUALITY REPORT FAILURE RATE AND MTBF DATA 0603 AND 0805 MULTI LAYER CERAMIC CHIP CAPACITOR NP0, X7R & Y5V TESTED PRODUCT: –NP0: –X7R: –Y5V: C0603C0G500-100JNE C0603X7R500-102KNE
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MLB-AK-K77
C0603C0G500-100JNE
C0603X7R500-102KNE
C0603Y5V250-104ZNE
C0805C0G500-100JNE
C0805X7R500-102KNE
C0805Y5V500-104ZNE
an 17830
C0603X7R500
MLCC 0805 MTBF
C0603C0G500-100JNE
C0603X7R500-102KNE
C0603Y5V250-104ZNE
AHA0236
C0805X7R500-102KNE
63E06
an 17830 a
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X7R 335
Abstract: 19E-04 c1206x7r C1206X7R500-104KNE
Text: DOCUMENT NO. MLB-AL-D27 DATE 04.29.2007 WRITTEN CHECKED APPROVED / / / QUALITY REPORT FAILURE RATE AND MTBF DATA 1206 MULTI LAYER CERAMIC CHIP CAPACITOR NP0, X7R & Y5V TESTED PRODUCT: –NP0: –X7R: –Y5V: C1206C0G500-102JNE C1206X7R500-104KNE C1206Y5V160-105ZNE
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MLB-AL-D27
C1206C0G500-102JNE
C1206X7R500-104KNE
C1206Y5V160-105ZNE
X7R 335
19E-04
c1206x7r
C1206X7R500-104KNE
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MLCC 0402 MTBF
Abstract: C0402C0G500-101JNE C0402X7R160 47E-04 87E04 c0402c0g500 39E-04 C0402X
Text: DOCUMENT NO. MLB-0101-07 DATE 01.02.2007 WRITTEN CHECKED APPROVED / / / QUALITY REPORT FAILURE RATE AND MTBF DATA 0402 MULTI LAYER CERAMIC CHIP CAPACITOR NP0, X7R & Y5V TESTED PRODUCT: –NP0: –X7R: –Y5V: C0402C0G500-101JNE C0402X7R160-103KNE C0402Y5V250-104ZNE
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MLB-0101-07
C0402C0G500-101JNE
C0402X7R160-103KNE
C0402Y5V250-104ZNE
MLCC 0402 MTBF
C0402C0G500-101JNE
C0402X7R160
47E-04
87E04
c0402c0g500
39E-04
C0402X
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Untitled
Abstract: No abstract text available
Text: MLCC DWV Chip Capacitors Electrical Details High Dielectric Withstand Voltage DWV Capacitor Range Capacitance Range The Syfer DWV range is specifically designed for use in applications where a high Dielectric Withstand Voltage (DWV) is required. 4.7pF to 120nF
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120nF
500Vdc
30ppm/Ë
1000secs
P108621)
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Untitled
Abstract: No abstract text available
Text: MLCC DWV Chip Capacitors Electrical Details High Dielectric Withstand Voltage DWV Capacitor Range Capacitance Range The Syfer DWV range is specifically designed for use in applications where a high Dielectric Withstand Voltage (DWV) is required. 4.7pF to 120nF
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120nF
500Vdc
30ppm/Ë
1000secs
P107524)
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axial npo capacitor
Abstract: No abstract text available
Text: MLCC DWV Chip Capacitors Electrical Details High Dielectric Withstand Voltage DWV Capacitor Range Capacitance Range The Syfer DWV range is specifically designed for use in applications where a high Dielectric Withstand Voltage (DWV) is required. 4.7pF to 120nF
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120nF
500Vdc
30ppm/Ë
1000secs
P108890)
axial npo capacitor
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D496
Abstract: D505 VIB0001TFJ
Text: VIB0001TFJ BCMTM Bus Converter • 352 V to 11 V V•I ChipTM Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1017 W/in3 • <1 µs transient response • Small footprint – 260 W/in2 • >3.5 million hours MTBF
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VIB0001TFJ
D496
D505
VIB0001TFJ
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Untitled
Abstract: No abstract text available
Text: VIB0001TFJ BCMTM Bus Converter • 352 V to 11 V V•I ChipTM Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1036 W/in3 • <1 µs transient response • Small footprint – 260 W/in2 • >3.5 million hours MTBF
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VIB0001TFJ
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capacitor 47 nano
Abstract: capacitors coefficient of thermal expansion cte table cte table epoxy mlc avx capacitors cte cte table epoxy substrate Capacitor Assembly MTBF
Text: SMPS Capacitors Assembly Guidelines Reliability ២ ២ = ២ Voltage Acceleration ២ AVX has been involved in numerous military and customer High Reliability programs for over 40 years. Reliability [% Failure Rate FR% or Mean Time Between Failure (MTBF)] is based on the number of failures and the cumulative
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12ions
capacitor 47 nano
capacitors coefficient of thermal expansion
cte table
cte table epoxy
mlc avx capacitors cte
cte table epoxy substrate
Capacitor Assembly MTBF
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D496
Abstract: D505 VIB0001TFJ
Text: VIB0001TFJ BCMTM Bus Converter • 352 V to 11 V V•I ChipTM Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1017 W/in3 • <1 µs transient response • Small footprint – 260 W/in2 • >3.5 million hours MTBF
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VIB0001TFJ
D496
D505
VIB0001TFJ
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capacitors coefficient of thermal expansion
Abstract: mlc avx capacitors cte cte table Capacitor Assembly MTBF
Text: SMPS Capacitors Assembly Guidelines Reliability ២ ២ = ២ Voltage Acceleration ២ AVX has been involved in numerous military and customer High Reliability programs for over 40 years. Reliability [% Failure Rate FR% or Mean Time Between Failure (MTBF)] is based on the number of failures and the cumulative
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12estrictions
capacitors coefficient of thermal expansion
mlc avx capacitors cte
cte table
Capacitor Assembly MTBF
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cte table
Abstract: cte table epoxy cte table epoxy substrate cte table for epoxy adhesive and substrate Capacitor Assembly MTBF CAPACITOR chip mtbf mlc avx capacitors cte capacitors coefficient of thermal expansion SMPS 1812
Text: SMPS Capacitors Assembly Guidelines Reliability ២ ២ = ២ Voltage Acceleration ២ AVX has been involved in numerous military and customer High Reliability programs for over 40 years. Reliability [% Failure Rate FR% or Mean Time Between Failure (MTBF)] is based on the number of failures and the cumulative
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12tions
cte table
cte table epoxy
cte table epoxy substrate
cte table for epoxy adhesive and substrate
Capacitor Assembly MTBF
CAPACITOR chip mtbf
mlc avx capacitors cte
capacitors coefficient of thermal expansion
SMPS 1812
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JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE AND
Abstract: JESD22-A-108-B B048K120T20
Text: BCM V•I Chip – BCM Bus Converter Module TM B048K120T20 + + –K – • >96% efficiency • 200 Watt 300 Watt for 1 ms • 125°C operation • High density – up to 800 W/in3 • 1 µs transient response • Small footprint – 200 W/in • >3.5 million hours MTBF
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B048K120T20
07/04/10M
JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE AND
JESD22-A-108-B
B048K120T20
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transistor marking JB
Abstract: No abstract text available
Text: BCM V•I Chip – BCM Bus Converter Module TM B048K096T24 + + –K – • >96% efficiency • 240 Watt 360 Watt for 1 ms • 125°C operation • High density – up to 960 W/in3 • <1 µs transient response • Small footprint – 240 W/in • >3.5 million hours MTBF
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B048K096T24
07/04/10M
transistor marking JB
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Untitled
Abstract: No abstract text available
Text: V•I Chip – BCM Bus Converter Module TM B048K120T20 + + –K – • >96% efficiency • 200 Watt 300 Watt for 1 ms • 125°C operation • High density – up to 800 W/in3 • 1 µs transient response • Small footprint – 200 W/in • >3.5 million hours MTBF
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B048K120T20
02/04/10M
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B048K120T20
Abstract: JESD22-A-103A JESD22-A-104B SR-332
Text: V•I Chip – BCM Bus Converter Module TM B048K120T20 + + –K – • >96% efficiency • 200 Watt 300 Watt for 1 ms • 125°C operation • High density – up to 800 W/in3 • 1 µs transient response • Small footprint – 200 W/in • >3.5 million hours MTBF
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B048K120T20
07/04/10M
B048K120T20
JESD22-A-103A
JESD22-A-104B
SR-332
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JESD22-B-104-A
Abstract: J-STD-029 SMD TRANSISTOR MARKING 2.x
Text: V•I Chip – BCM Bus Converter Module TM B048K096T24 + + –K – • >96% efficiency • 240 Watt 360 Watt for 1 ms • 125°C operation • High density – up to 960 W/in3 • <1 µs transient response • Small footprint – 240 W/in • >3.5 million hours MTBF
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B048K096T24
06/04/10M
JESD22-B-104-A
J-STD-029
SMD TRANSISTOR MARKING 2.x
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Untitled
Abstract: No abstract text available
Text: V•I Chip – BCM Bus Converter Module TM B048K480T30 + + –K – • >97% efficiency • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1165 W/in3 • <1 µs transient response • Small footprint – 280 W/in • >3.5 million hours MTBF
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B048K480T30
P/N27688
06/04/10M
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smd RO25
Abstract: No abstract text available
Text: V•I Chip – BCM Bus Converter Module TM B048K120T20 + + –K – • >96% efficiency • 200 Watt 300 Watt for 1 ms • 125°C operation • High density – up to 800 W/in3 • 1 µs transient response • Small footprint – 200 W/in • >3.5 million hours MTBF
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B048K120T20
06/04/10M
smd RO25
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14bcm
Abstract: No abstract text available
Text: V•I Chip – BCM Bus Converter Module TM B048K096T24 + + –K – • >96% efficiency • 240 Watt 360 Watt for 1 ms • 125°C operation • High density – up to 960 W/in3 • <1 µs transient response • Small footprint – 240 W/in • >3.5 million hours MTBF
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B048K096T24
07/04/10M
14bcm
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JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE AND
Abstract: No abstract text available
Text: V•I Chip – BCM Bus Converter Module TM B048K480T30 + + –K – • >97% efficiency • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1165 W/in3 • <1 µs transient response • Small footprint – 280 W/in • >3.5 million hours MTBF
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B048K480T30
P/N27688
07/04/10M
JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE AND
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Untitled
Abstract: No abstract text available
Text: V•I Chip – BCM Bus Converter Module TM B048K096T24 + + –K – • >96% efficiency • 240 Watt 360 Watt for 1 ms • 125°C operation • High density – up to 960 W/in3 • <1 µs transient response • Small footprint – 240 W/in • >3.5 million hours MTBF
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B048K096T24
02/04/10M
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TRANSFORMER 6200
Abstract: D496 D505 V048F240T012
Text: V048F240T012 V048F240M012 VTM VTMTM Transformer • 48 V to 24 V V•I ChipTM Converter • 125°C operation TJ • 12.5 A (18.8 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2
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V048F240T012
V048F240M012
V048F240T012
TRANSFORMER 6200
D496
D505
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