smd code marking 777
Abstract: BB155 SMD MARKING CODE 1C marking code pe
Text: Philips Semiconductors Product specification Low-voltage variable capacitance diode BB155 FEATURES • Very low capacitance spread • Excellent linearity • Low series resistance -n - • Very small plastic SMD package. APPLICATIONS Marking code: PE. • Voltage controlled oscillators
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BB155
BB155
OD323
OD323)
711002b
smd code marking 777
SMD MARKING CODE 1C
marking code pe
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marking code T1
Abstract: capacitance diode marking T1 BB669WS
Text: BB669WS SILICON TUNING DIODE PINNING Features • Very high capacitance ratio • Low series resistance • Excellent uniformity and matching due to "in-line" matching assembly procedure PIN DESCRIPTION 1 Cathode 2 Anode 2 1 T1 Top View Marking Code: "T1"
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BB669WS
OD-323
OD-323
marking code T1
capacitance diode marking T1
BB669WS
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marking code T1
Abstract: capacitance diode marking T1 irf 615
Text: BB669WS SILICON TUNING DIODE PINNING Features • Very high capacitance ratio • Low series resistance • Excellent uniformity and matching due to "in-line" matching assembly procedure PIN DESCRIPTION 1 Cathode 2 Anode 2 1 T1 Top View Marking Code: "T1"
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BB669WS
OD-323
OD-323
marking code T1
capacitance diode marking T1
irf 615
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diode J2 marking code
Abstract: VPS05176 diode marking j2 Q62702B diode 1-35 j2 capacitance diode marking T1 DIODE J2
Text: SIEMENS BB 639C Silicon Variable Capacitance Diode For tuning of extended frequency band in VHF TV / VTR tuners 1 VPS05176 1 o - M — 2 o EHA07001 Type Marking Ordering Code Pin Configuration Package BB 639C yellow S Q62702-B695 1 =C 2=A SOD-323 Maximum Ratings
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VPS05176
EHA07001
Q62702-B695
OD-323
Apr-30-1998
diode J2 marking code
VPS05176
diode marking j2
Q62702B
diode 1-35 j2
capacitance diode marking T1
DIODE J2
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Untitled
Abstract: No abstract text available
Text: SIEMENS BB 835 Silicon Tuning Diode Preliminary data Features Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units High capacitance ratio 2 5:1 Type BB 835 Marking yellow X Ordering Code tape and reel 1 Q62702-B802 C Pin Configuration
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Q62702-B802
OD-323
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NXP SMD ZENER DIODE MARKING CODE
Abstract: placeholder for manufacturing site code
Text: SO T1 43 B PRTR5V0U2AX Ultra low capacitance double rail-to-rail ESD protection diode Rev. 3 — 15 May 2012 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance double rail-to-rail ElectroStatic Discharge ESD protection diode in
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OT143B
NXP SMD ZENER DIODE MARKING CODE
placeholder for manufacturing site code
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marking code T1
Abstract: capacitance diode marking T1 smd diode 615 marking code "T1" DIODE smd 434
Text: BB669ST SILICON TUNING DIODE FEATURES PINNING ● Very high capacitance ratio ● Low series resistance 1 Cathode Excellent uniformity and matching due to 2 Anode ● PIN DESCRIPTION “in-line” matching assembly procedure 1 T1 APPLICATIONS ˙ For VHF 2-Band-hyperband-TV-tuners
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BB669ST
OD-323
OD-323
marking code T1
capacitance diode marking T1
smd diode 615
marking code "T1"
DIODE smd 434
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Untitled
Abstract: No abstract text available
Text: MIXD80PM650TMI IGBT Modules Multi Level IC80 T1/T4 = 82 A IC80 (T2/T3) = 110 A VCES = 650 V VCE(sat) typ. = 1.5 V XPT IGBT Technology Part name (Marking on product) MIXD80PM650TMI + Th1 D1 G1 Th2 T1 E1 e NTC D5 D2 T2 iv G2 N E2 G3 U D3 T3 E3 t D6 G4 D4 T4
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MIXD80PM650TMI
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diode a4p
Abstract: a4p sot-23 A4P marking code BAV70 BAW62 philips sot-23 bav70 ScansUX40
Text: 71]iOAc?b 00kfl321 T14 HPHIN BAV70 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV70 consists of two diodes in a microminiature plastic envelope. The cathodes are commoned and the unit is intended for high-speed switching in thick and thin-film circuits.
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711002b
bfl321
BAV70
BAV70
diode a4p
a4p sot-23
A4P marking code
BAW62
philips sot-23 bav70
ScansUX40
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Q62702-X148
Abstract: capacitance diode marking T1
Text: Silicon PIN Diode ● Microwave attenuator diode ● Linear RF characteristic BXY 44K Type Marking Ordering Code Pin Configuration Package1 BXY 44K – Q62702-X148 Cathode: black dot, heat sink T1 Maximum Ratings Parameter Symbol Values Unit Reverse voltage
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Q62702-X148
Q62702-X148
capacitance diode marking T1
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PROTEK SO-8 DEVICE MARKING
Abstract: PLC03-6 marking PBA
Text: ® PLC03-6 . . . . . Engineered solutions for the transient environment TELECOM DIODE BRIDGE/ TVS ARRAY IEC 1000-4 COMPATIBLE APPLICATIONS ● ● ● ● ● T1/E1 Line Cards ISDN U-Interfaces ADSL & HDSL Interfaces ISDN S/T Interfaces RS-485, 100 Base T & Category 5 Interface Circuits
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PLC03-6
RS-485,
PLC03-6
PROTEK SO-8 DEVICE MARKING
marking PBA
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Untitled
Abstract: No abstract text available
Text: Si2307BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.078 @ VGS = −10 V −3.2 0.130 @ VGS = −4.5 V −2.5 VDS (V) −30 30 D TrenchFETr Power MOSFET D RoHS Compliant TO-236 (SOT-23) G 1 3 S Ordering Information: Si2307BDS-T1—E3 (Lead (Pb)-Free)
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Si2307BDS
O-236
OT-23)
Si2307BDS-T1--E3
S-50906--Rev.
09-May-05
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Si2302ADS-T1-E3
Abstract: Si2302ADS Si2302ADS-T1
Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Si2302ADS-T1-E3 (Lead (Pb)-free)
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Si2302ADS
O-236
OT-23)
Si2302ADS-T1
Si2302ADS-T1-E3
08-Apr-05
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diode MARKING v34
Abstract: rectifier diode of piv 12v 12V PIV RATING DIODE diodes with piv greater than 18 HDSL 120 RS-423 VSB06P05LCI VSB06P12LCI
Text: 05062 VSB06P05LCI thru VSB06P12LCI . . . engineered solutions for the transient environment LOW CAPACITANCE ISOLATED VSIP TVS DIODE ARRAY APPLICATIONS ✔ RS-232, and RS-423 Data Lines ✔ T1/E1 & T3/E3 ✔ ATM Circuit Interface ✔ ADSL/HDSL & ISDN Interface
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VSB06P05LCI
VSB06P12LCI
RS-232,
RS-423
EN61000-4)
5/50ns
diode MARKING v34
rectifier diode of piv 12v
12V PIV RATING DIODE
diodes with piv greater than 18
HDSL 120
VSB06P05LCI
VSB06P12LCI
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motorola diode marking code
Abstract: motorola surface mount marking code DIODE MARKING CODE 623 code 006 motorola motorola diode code fm CQ 419 ma141 M1MA141KT1 M1MA142KT1 lp "motorola"
Text: MOTOROLA SEMICONDUCTOR •¡h h h h h h TECHNICAL DATA Single Silicon Sw itching Diode M 1M A 141K T1 M 1M A 142K T1 This Silicon Epitaxial Planar Oiode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed tor low power
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SC-70
M1MA141/2KT1
inch/3000
M1MA141/2KT3
inch/10
M1MA141KT1
M1MA142KT1
100i2
motorola diode marking code
motorola surface mount marking code
DIODE MARKING CODE 623
code 006 motorola
motorola diode code fm
CQ 419
ma141
M1MA142KT1
lp "motorola"
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nbs16
Abstract: esd07
Text: PL IA NT Features S CO M • *R oH ■ ■ ■ Applications RoHS Compliant* ESD protection >40k V Protects 2 lines Low capacitance - 15 pF T1/E1 Ports Ethernet Ports Wireless LANs xDSL Equipment ■ ■ ■ ■ CDNBS16-PLC05-6 – Low Capacitance TVS Diode Array
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CDNBS16-PLC05-6
CDNBS16-PLC05-6
SO-16
ESD0706
nbs16
esd07
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Si2307BDS-T1-E3
Abstract: Si2307BDS
Text: Si2307BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.078 @ VGS = −10 V −3.2 0.130 @ VGS = −4.5 V −2.5 VDS (V) −30 30 D TrenchFETr Power MOSFET D RoHS Compliant TO-236 (SOT-23) G 1 3 S Ordering Information: Si2307BDS-T1—E3 (Lead (Pb)-Free)
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Si2307BDS
O-236
OT-23)
Si2307BDS-T1--E3
08-Apr-05
Si2307BDS-T1-E3
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Si3442BDV
Abstract: Si3442BDV-T1-E3 tOP MaRKinGS
Text: Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.057 at VGS = 4.5 V 4.2 0.090 at VGS = 2.5 V 3.4 RoHS COMPLIANT TSOP-6 Top V iew 3 mm 1 6 2 5 3 4 (1, 2, 5, 6) D (3) G 2.85 mm (4) S Ordering Information: Si3442BDV-T1-E3 (Lead (Pb)-free)
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Si3442BDV
Si3442BDV-T1-E3
18-Jul-08
tOP MaRKinGS
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NBS16
Abstract: CDNBS16-PLC05-6 IEC61000-4-4
Text: PL IA NT Features S CO M • *R oH ■ ■ ■ Applications RoHS Compliant* ESD protection >40k V Protects 2 lines Low capacitance - 15 pF T1/E1 Ports Ethernet Ports Wireless LANs xDSL Equipment ■ ■ ■ ■ CDNBS16-PLC05-6 – Low Capacitance TVS Diode Array
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CDNBS16-PLC05-6
CDNBS16-PLC05-6
SO-16
NBS16
IEC61000-4-4
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Si3442BDV
Abstract: Si3442BDV-T1-E3
Text: Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.057 at VGS = 4.5 V 4.2 0.090 at VGS = 2.5 V 3.4 RoHS COMPLIANT TSOP-6 Top V iew 3 mm 1 6 2 5 3 4 (1, 2, 5, 6) D (3) G 2.85 mm (4) S Ordering Information: Si3442BDV-T1-E3 (Lead (Pb)-free)
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Si3442BDV
Si3442BDV-T1-E3
08-Apr-05
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how to test tvs diode
Abstract: 12L marking
Text: FEATURES • • • • • APPLICATIONS Lead Free As Standard RoHS Compliant Low Capacitance 3pF ESD Protection Surge Protection • • • • Personal Digital Assistant PDA Mobile Phones & Accessories Portable Electronics ADSL / VDSL Cards CDSOT236-T12LC – Surface Mount TVS Diode
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CDSOT236-T12LC
CDSOT236-T12LC
OT23-6L
CDSOT236-T12LC.
2002/95/EC
how to test tvs diode
12L marking
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NBS16
Abstract: CDNBS16-PLC05-6 IEC61000-4-4
Text: PL IA NT Features *R oH S CO M • ■ ■ ■ Applications RoHS Compliant* ESD protection >40k V Protects 2 lines Low capacitance - 15 pF T1/E1 Ports Ethernet Ports Wireless LANs xDSL Equipment ■ ■ ■ ■ CDNBS16-PLC05-6 – Low Capacitance TVS Diode Array
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CDNBS16-PLC05-6
CDNBS16-PLC05-6
SO-16
RS-481-A.
NBS16
IEC61000-4-4
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NBS16
Abstract: CDNBS16-PLC05-6 IEC61000-4-4 SO16 footprint
Text: PL IA N T Features *R oH S CO M • ■ ■ ■ Applications RoHS Compliant* ESD protection >40k V Protects 2 lines Low capacitance - 15 pF T1/E1 Ports Ethernet Ports Wireless LANs xDSL Equipment ■ ■ ■ ■ CDNBS16-PLC05-6 – Low Capacitance TVS Diode Array
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CDNBS16-PLC05-6
CDNBS16-PLC05-6
SO-16
RS-481-A.
NBS16
IEC61000-4-4
SO16 footprint
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3304N
Abstract: CDDFN10-3304N DFN10 DFN-10 diode T3 Marking
Text: NT IA PL M CO S oH *R Features Applications • Lead free as standard ■ FireWire, T1/E1, T3/E3 chip side protection ■ RoHS compliant* ■ Digital Visual Interface DVI ■ Low capacitance - 4 pF ■ Ethernet 10/100/1000 Base T ■ ESD protection >24 kV
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CDDFN10-3304N
RS-481-A.
3304N
DFN10
DFN-10
diode T3 Marking
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