V1430
Abstract: 6914
Text: K FC • KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA I KDV1430 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. FEATURES • High Capacitance Ratio : C2v/C9v=3.7~5.0 • Low rs : rs=0.5Q Max. . • Small Package.
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V1430
S0T-23
70MHz
V1430
6914
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sv101
Abstract: No abstract text available
Text: TOSHIBA 1SV101 TOSHIBA VARIABLE CAPACITANCE DIODE FM TUNER APPLICATIONS. SILICON EPITAXIAL PLANAR TYPE 1 S V 101 Unit in mm 4.3 MAX. • • • • High Capacitance Ratio Low Series Resistance Small Package. Low Tuning Voltage Range C3V/C9V = 2-0~2.7 rs = 0.30 Typ.
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1SV101
Rever89-31
sv101
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c9v diode
Abstract: 6914 sot23 Marking f7 c9v 57 KDV1430
Text: KDV1430 SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA FM RADIO BAND TUNING APPLICATION. FEATURES ᴌHigh Capacitance Ratio : C2V/C9V=3.7ᴕ5.0 E B L L ᴌLow rS : rS=0.5ή Max. . 3 G H A 2 D ᴌSmall Package. 1 MAXIMUM RATING (Ta=25ᴱ)
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KDV1430
c9v diode
6914
sot23 Marking f7
c9v 57
KDV1430
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1300313
Abstract: JE 13003
Text: b7 {DISCRETE/OPTO} 9 09 725 0 T OS HI BA D eT| TOTVHSG 000^355 5 | ~ D IS C R E T E / O P T O 6 7c 09355 ; D " Silicon EpitaxiaL P la n a r Ty pe 1SV100 Variable Capacitance Diode AM RADIO BAND TUNING APPLICATIONS. Unit in mm 4 .2 MAX. FEATURES: . High Capacitance Ratio : C]_v/c9V= 17(Min.)
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1SV100
a55MAX.
1300313
JE 13003
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV101 FM TU N ER A PP LIC A TIO N S. • • • • H igh C apacitance Ratio Low Series Resistance Sm all Package. Low T uning Voltage Range C3V ! C9v = 2.0~2.7 rs = 0.3ü Typ. 3V-9V M A X IM U M R ATIN G S (Ta = 25°C)
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1SV101
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diode varactor
Abstract: No abstract text available
Text: ྏܤऔ! Varactor Diode FHV1430 Varactor Diode ྏܤऔ DESCRIPTION & FEATURES 概述及特點 High Capacitance Ratio: C2V∕C9V=3.7~5.0 低串聯電阻 Low Series Resistance: rs=0.5Ω 低串聯電阻 FM Radio Band Tuning Application FM無線波段應用
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FHV1430
OT-23
OT-23
FHV1430A
FHV1430B
FHV1430C
FHV1430D
diode varactor
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1235Z
Abstract: 35Z diode KV1226 KV1236Z KV1236 toko VARIABLE CAPACITORS V1420 KV1235Z TOKO sot-23 Toko KV1226
Text: 3bE » TOKO AMERICA INC • TDbTlaBS D0D1S73 S ■ TAI T 'O l'l^ TO K O DI0DES Variable Capacitance Diode Application For AM, FM, UHF AM FM t f — KffliÉSU— K • KV1230Z • KV1234Z • AM Variable Capacitance KV1235Z KV1236Z • KV1250 • KV1260 •
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D0D1S73
KV1226
KV1230Z
KV1234Z
KV1235Z
KV1236Z
KV1250
KV1260
KV1260-2
KV1280
1235Z
35Z diode
KV1236
toko VARIABLE CAPACITORS
V1420
TOKO sot-23
Toko KV1226
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c9v diode
Abstract: 1SV101
Text: r? TOSHIBA {DI SCR ET E/O PTO } 9097250 TOSHIBA <DISCRETE/OPTO > « . * dF | TOTOSQ D O O ^ A 67C 09358 Silicon Epitaxial Planar T y p e ^ - T-ol~l4 D 1SV101 Variable Capacitance Diode FM RADIO BAND TUNING APPLICATIONS. Unit in min 4.2 MAX.
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00c135fl
1SV101
c9v diode
1SV101
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SVC342
Abstract: No abstract text available
Text: Ordering number :EN2617B SVC342 Diffused Junction Type Sillicon Diode Varactor Diode for AM Receiver Electronic Tuning Use Features Package Dimensions • Twin type varactor diode for low-voltage AM electronic tuning use. · High capacitance ratio. · Excellent linearity of C-V characteristic.
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EN2617B
SVC342
1074B
SVC342]
SC-43
SVC342
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SVC342
Abstract: varactor diode AM EN26 c9v diode
Text: Ordering number :EN2617B SVC342 Diffused Junction Type Silicon Diode Varactor Diode for AM Receiver Electronic Tuning Use Features Package Dimensions • Twin type varactor diode for low-voltage AM electronic tuning use. · High capacitance ratio. · Excellent linearity of C-V characteristic.
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EN2617B
SVC342
1074B
SVC342]
SC-43
SVC342
varactor diode AM
EN26
c9v diode
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SVC341
Abstract: varactor diode AM 7227at 26-183
Text: Ordering number :EN2618B SVC341 Diffused Junction Type Silicon Diode Varactor Diode for Receiver Electronic Tuning Use Features Package Dimensions • Twin type varactor diode for low-voltage AM electronic tuning use. · High capacitance ratio. · Excellent linearity of C-V characteristic.
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EN2618B
SVC341
SVC341-applied
SVC341
SVC341]
varactor diode AM
7227at
26-183
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Untitled
Abstract: No abstract text available
Text: Ordering number :EN2618B SVC341 Diffused Junction Type Silicon Diode Varactor Diode for Receiver Electronic Tuning Use Features Package Dimensions • Twin type varactor diode for low-voltage AM electronic tuning use. · High capacitance ratio. · Excellent linearity of C-V characteristic.
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EN2618B
SVC341
SVC341-applied
SVC341
SVC341]
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c9v diode
Abstract: 1SV101 288529
Text: 1SV101 TO SHIBA TOSHIBA VARIABLE CAPACITANCE DIODE FM TUNER APPLICATIONS. SILICON EPITAXIAL PLANAR TYPE 1 S V 1 01 Unit in mm 4.3 MAX. • • • • High Capacitance Ratio Low Series Resistance Small Package. Low Tuning Voltage Range C 2 v /C 9 v = 2.0~2.7
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1SV101
0L55MAX.
50MHz
c9v diode
1SV101
288529
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SVC342
Abstract: No abstract text available
Text: Ordering number :EN2617B SVC342 Diffused Junction Type Silicon Diode Varactor Diode for AM Receiver Electronic Tuning Use Features Package Dimensions • Twin type varactor diode for low-voltage AM electronic tuning use. · High capacitance ratio. · Excellent linearity of C-V characteristic.
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EN2617B
SVC342
1074B
SVC342]
SC-43
SVC342
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SVC341
Abstract: EN2618B 4550L
Text: Ordering number :EN2618B SVC341 Diffused Junction Type Sillicon Diode Varactor Diode for Receiver Electronic Tuning Use Features Package Dimensions • Twin type varactor diode for low-voltage AM electronic tuning use. · High capacitance ratio. · Excellent linearity of C-V characteristic.
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EN2618B
SVC341
SVC341-applied
SVC341
SVC341]
EN2618B
4550L
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1SV101
Abstract: c9v diode
Text: TOSHIBA 1SV101 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 01 FM TUNER APPLICATIONS. Unit in mm 4.3 MAX. • • • • High Capacitance Ratio Low Series Resistance Small Package. Low Tuning Voltage Range ^3V / Cgy = 2.0~2.7 rs = 0.30 Typ.
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1SV101
0L55MAX.
50MHz
1SV101
c9v diode
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 1SV101 TOSHIBA VARIABLE CAPACITANCE DIODE FM TUNER APPLICATIONS. SILICON EPITAXIAL PLANAR TYPE 1 S V 1 01 Unit in mm 4.3 MAX. High Capacitance Ratio Low Series Resistance Small Package. Low Tuning Voltage Range : e 3 v / C 9 v = 2 .0 ~ 2 . 7 : rs = 0.30 Typ.
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1SV101
CL551Ã
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S0T23
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KDV1430 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. FEATURES • High Capacitance Ratio : C2v/C 9v=3.7 —5.0 • Low rs • rs=0.5ß Max. . • Small Package. DIM A B C D E G H
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V1430
CAPACIT09
70MHz
S0T23
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KV1226
Abstract: KV1371NT KV1235Z KV1320 1235Z KV1290A-3 1236Z kv1236 V1420 KV1236Z
Text: TOKO AMERICA INC •5 v m m ?b3g poonsq 13a DIODES • t a i ' ^ Q ' I ^ 1^ TO K O K Variable Capacitance Diodes Application For AM,* FM, UHF AM F M U H F l i g â T f t l ^ - f ^ - K f f l i ÉSU- K • KV1235Z KV1236Z • KV1260 • KV1260-2 KV1280 Diodes
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KV1226
KV1230Z
KV1234Z
KV1235Z
KV1236Z
KV1260
KV1260-2
KV1280
KV1280-2
KV1281
KV1371NT
KV1320
1235Z
KV1290A-3
1236Z
kv1236
V1420
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toshiba 1997 label
Abstract: 1sv101
Text: TOSHIBA 1SV101 TOSHIBA VARIABLE CAPACITANCE DIODE u v SILICON EPITAXIAL PLANAR TYPE i m FM TUNER APPLICATIONS. • High Capacitance Ratio C3V / C 9V = 2.0~2.7 • Low Series Resistance rsj = 0.3n Typ. • Small Package. • Low Tuning Voltage Range 3V-9V
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1SV101
--15V
50MHzv
toshiba 1997 label
1sv101
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KV1235
Abstract: KV1235Z KV1236 KV1851 KV1226 TOKO SOT23L-3 KV1236Z KV1310A-2 KV1260 KV1301A-2
Text: DIODES 24 TOKO 9 ' 4 * - t- Variable Capacitance Diodes Application For AM K f f l& S iJ- f t 25 KV1230Z vco 1 element KV1234Z Tun. 4 element 2% CB4-8 KV1235Z Tun. 3 element 2% CB3-6 KV1236Z Tun. 1% CB2-4 KV1260 Tun. 2 element, 1 chip 1% CB1-3 KV1260-2 Tun.
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KV1226
KV1230Z
KV1234Z
KV1235Z
KV1236Z
KV1260
KV1260-2
KV1260M
KV1280-1
KV1280-2
KV1235
KV1236
KV1851
TOKO SOT23L-3
KV1310A-2
KV1301A-2
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Untitled
Abstract: No abstract text available
Text: O rdering num ber: EN2618B _ SVC341 Diffused Junction Type Silicon Diode Varactor Diode for AM Receiver Electronic Tuning U se F eatu res • Twin type varactor diode for low-voltage AM electronic tuning use. •High capacitance ratio. ■Excellent linearity of C-V characteristic.
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EN2618B
SVC341
SVC341-applied
SVC341
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Zener c9v
Abstract: marking C9k marking C9R marking C9Z marking c9f 91E diode c9v diode c9v 57 zener diode marking code 57 voltage regulator c9b
Text: CMPZ4678 THRU CMPZ4717 SURFACE MOUNT LOW LEVEL SILICON ZENER DIODE 1.8 VOLTS THRU 43 VOLTS 350mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ4678 Series silicon zener diode is a high quality voltage regulator
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CMPZ4678
CMPZ4717
350mW,
OT-23
100mA
CMPZ4699
CMPZ4700
CMPZ4701
CMPZ4702
Zener c9v
marking C9k
marking C9R
marking C9Z
marking c9f
91E diode
c9v diode
c9v 57
zener diode marking code 57
voltage regulator c9b
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ltc6802g-2
Abstract: LTC6802-2 Zener c9v zener diode c5v LTC6802G LTC6802-1 bidirectional optocoupler c5v zener diode ltc6802 LT6003
Text: LTC6802-2 Multicell Addressable Battery Stack Monitor Features Description Measures Up to 12 Li-Ion Cells in Series 60V Max n Stackable Architecture Enables Monitoring High Voltage Battery Stacks n Individually Addressable with 4-Bit Address n 0.25% Maximum Total Measurement Error
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LTC6802-2
44-Lead
500kbps
LTC6802-1
LTC6802-2,
68022fa
ltc6802g-2
LTC6802-2
Zener c9v
zener diode c5v
LTC6802G
LTC6802-1
bidirectional optocoupler
c5v zener diode
ltc6802
LT6003
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