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    C838

    Abstract: transistor A7 C834
    Text: 40?27 <A8?4 )8A4 =<A02A * H <C4@A=?@ H &?4@@ =2B;4<A )40?27 H &029064 )40?27 H &0?0;4A?82 )40?27 H ?=@@ 454?4<24 )40?27 H ?44< (=) H 0:2B:0A=?@ H *74?;0: 0A0 H (4:8018:8AF =;4  &?=3B2A@  :=29 *8;8<6 4C824@  & $=A41=9 )4?C4? :=29@  :=29 )F<A74@8G4? 1F 78>@4A ,4<3=?  4@9A=> 78>@4A@ 


    Original     		PDF 4C824@ 8C02F 4C824 C838 transistor A7 C834

    C838

    Abstract: No abstract text available
    Text: 40?27 <A8?4 )8A4 =<A02A * H <C4@A=?@ H &?4@@ =2B;4<A )40?27 H &029064 )40?27 H &0?0;4A?82 )40?27 H ?=@@ 454?4<24 )40?27 H ?44< (=) H 0:2B:0A=?@ H *74?;0: 0A0 H (4:8018:8AF =;4  &?=3B2A@  :=29 *8;8<6 4C824@  & $=A41=9 )4?C4? :=29@  :=29 )F<A74@8G4? 1F 78>@4A ,4<3=?  4@9A=> 78>@4A@ 


    Original     		PDF 4C824@ 8C02F 4C824 C838

    C838

    Abstract: c834 G7 diode 38c4 h02b
    Text: 40?27 <A8?4 )8A4 =<A02A * H <C4@A=?@ H &?4@@ =2B;4<A )40?27 H &029064 )40?27 H &0?0;4A?82 )40?27 H ?=@@ 454?4<24 )40?27 H ?44< (=) H 0:2B:0A=?@ H *74?;0: 0A0 H (4:8018:8AF =;4  &?=3B2A@  :=29 *8;8<6 4C824@  & $=A41=9 )4?C4? :=29@  :=29 )F<A74@8G4? 1F 78>@4A ,4<3=?  4@9A=> 78>@4A@ 


    Original     		PDF 4C824@ 8C02F 4C824 C838 c834 G7 diode 38c4 h02b

    C838

    Abstract: G7 diode
    Text: 40?27 <A8?4 )8A4 =<A02A * H <C4@A=?@ H &?4@@ =2B;4<A )40?27 H &029064 )40?27 H &0?0;4A?82 )40?27 H ?=@@ 454?4<24 )40?27 H ?44< (=) H 0:2B:0A=?@ H *74?;0: 0A0 H (4:8018:8AF =;4  &?=3B2A@  :=29 *8;8<6 4C824@  & $=A41=9 )4?C4? :=29@  :=29 )F<A74@8G4? 1F 78>@4A ,4<3=?  4@9A=> 78>@4A@ 


    Original     		PDF 4C824@ 8C02F 4C824 C838 G7 diode

    c243 r47

    Abstract: c4381 R738 D1041 c918 C833 C639 C1027 R474 C939
    Text: C1024 C1025 R244 R231 R228 R227 Q79 Q78 Q34 D17 Q36 J31 G9 J26 D31 C259 R933 C357 J7 C939 C358 G10 C380 J17 C270 C363 D42 U43 C444 Q27 U26 U44 U32 C264 G5 U38 D36 D29 R416 C424 D61 C323 U30 C399 R333 G1 C376 D1 C306 C339 L17 C322 C453 C665 L15 C1030 C273 C116


    Original     		PDF C1025 C1024 C1048 C1043 C1041 C1012 c243 r47 c4381 R738 D1041 c918 C833 C639 C1027 R474 C939

    C1093

    Abstract: R474 TP8107 C9106 C9104 C9130 C1307 C9045 TP8111 R734
    Text: A01 A02 A03 A05 A04 R187 C9 R718 Q59 R56 C522 J12 R549 C591 R406 R861 R33 C452 C9131 C9127 C9129 R4 C49 D38 C1181 C1182 R1053 R241 R973 C1191 R976 C1119 C1156 R30 C227 C406 J100 A18 R368 R1604 R384 R381 R407 C279 R399 R330 R364 C405 R992 C402 U41 R1603 R1609


    Original     		PDF C9160 R9099 D7131 R9148 C9121 C9123 C9124 C9120 R9149 D102D101 C1093 R474 TP8107 C9106 C9104 C9130 C1307 C9045 TP8111 R734

    c828 transistor datasheet

    Abstract: C828 transistor transistor c828 c828 Z80A-CTC a684 transistor C838 transistor c828 datasheet z80a-PIO C880 transistor
    Text: APPLICATION NOTE 9 SCC IN BINARY SYNCHRONOUS COMMUNICATIONS 9 INTRODUCTION Zilog’s Z8030 Z-SCC Serial Communications Controller is one of a family of components that are Z-BUS compatible with the Z8000 CPU. Combined with a Z8000 CPU or other existing 8- or 16-bit CPUs with nonmultiplexed buses


    Original     		PDF Z8030 Z8000TM Z8000 16-bit Z8530 Z8000 c828 transistor datasheet C828 transistor transistor c828 c828 Z80A-CTC a684 transistor C838 transistor c828 datasheet z80a-PIO C880 transistor

    c838 transistor

    Abstract: transistor C839 C839 c839 transistor c838 D-12 IRGBC20K C839 H
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1128 IRGBC20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


    Original     		PDF IRGBC20K O-220AB C-842 c838 transistor transistor C839 C839 c839 transistor c838 D-12 IRGBC20K C839 H

    c839 transistor

    Abstract: c838 transistor transistor C839 c841 transistor C839 C838 C837 c841 C839 J TRANSISTOR c842
    Text: PD - 9.1128 IRGBC20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


    Original     		PDF IRGBC20K O-220AB C-842 c839 transistor c838 transistor transistor C839 c841 transistor C839 C838 C837 c841 C839 J TRANSISTOR c842

    c838 transistor

    Abstract: transistor C839 c839 D-12 IRGBC20K C842 c839 transistor gc 840 C838
    Text: PD - 9.1128 IRGBC20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


    Original     		PDF IRGBC20K O-220AB C-842 c838 transistor transistor C839 c839 D-12 IRGBC20K C842 c839 transistor gc 840 C838

    R472

    Abstract: d83 c502 r840 C498 R474 c829 RN7-RN14 r462 R767 R780
    Text: F12 C563 C565 C722 C207 R273 C203 C407 R271 R328 C199 Q13 C700 F9 D43 Q19 C773 C771 R16 R855 D70 D47 Q41 R129 C223 R234 C96 R447 R444C854 Q57 R860 R857 C550 R616 C566 R854 R548 C235 C613 R302 R388 F13 R577 R315 RT9 R639 Q5 Q110 C929 C521 R8 F7 R425 R662 R504


    Original     		PDF R444C854 R535R154 R1003 R1002 R1004 C445R637 R419R477 R472 d83 c502 r840 C498 R474 c829 RN7-RN14 r462 R767 R780

    R472

    Abstract: d83 c502 r462 C-854 r834 r649 R767 u34 c634 C949 R474
    Text: F12 C563 C565 RT9 R639 C207 R273 C203 C407 R271 R328 C199 Q13 R855 R854 D70 D47 Q41 R129 C223 R234 C96 D43 R447 R42 C773 C771 C849 R860 R857 R616 C550 R548 C235 R302 R388 C566 F13 R410 Q9 D19 C700 RT16 R455 Q104 Q7 R841 R844 R845 R763 D23 Q56 C732 C797 C672


    Original     		PDF C247C11 C331C88 R472 d83 c502 r462 C-854 r834 r649 R767 u34 c634 C949 R474

    R1019

    Abstract: R472 RJ19 C1186 C1162 c877 R947 C1239 c1165 R1007
    Text: R431 Q47 R771 T P3 2 R772 D32 D40 D79 Q22 C313 C310 R372 D25 C724 F7 U38 U27 U11 C199 C407 R328 R273 C203 Q61 Q107 R657 Q83 Q68 R652 L5 C189 C108 C104 C463 C944 C910 C342 C908 C103 C100 C455 C466 U4 C87 C31 C591 C699 R82 U15 C109 RT13 Q4 C617 C22 C411 C9 Q59


    Original     		PDF C1293 C1088 C1112 C1113 R1002 TP900 R1019 R472 RJ19 C1186 C1162 c877 R947 C1239 c1165 R1007

    DS493

    Abstract: No abstract text available
    Text: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 11. Mai n System PartLi st CODE DESCRI PTI ON REFERENCE EA 3920501 j ack-usb-4p-mnt4,JACK-USB;-,-,-,-,- J505 J2501 J2502 3 0401-000191 di ode,DI ODE-SWI TCHI NG;MMBD4148,75V,200MA,SOT-23,TP


    Original     		PDF

    77C7

    Abstract: 887c 1r12r
    Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23


    Original     		PDF

    HCB3216K-601T20

    Abstract: 2203-000254 R1005 c223 AR517 CDRH104R-100MC R797 R-783 C937 C886 2A AR5112
    Text: Sens Q 20 HJ KIM WS JUNG Kevin APPROVAL CETUS Main BA41-00377A MP 1.0 2003. 4. 24 CHECK : : : : : DRAW Model Name PCB Code Dev. Step Revision T.R. Date CPU :BANIAS LV Chip Set :855GM Remarks : CETUS 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17.


    Original     		PDF 855GM BA41-00377A 256MB/128MB ADM1032 400MHZ 100MHZ, 266DDR ZD500-1 ZD500-2 HCB3216K-601T20 2203-000254 R1005 c223 AR517 CDRH104R-100MC R797 R-783 C937 C886 2A AR5112

    0.1u_0603_25v7k

    Abstract: GL831 Sil1392 LA-4761P RTL8102EL FBMA-L11-160808-800LMT SST25LF080A_SO8-200mil tx2 0918 KB926 SP02000GC00
    Text: A ZZZ1 1 B C D E LA-4761P PCB 1 DAZ06H00100 Compal Confidential KIU10-Tiger M/B Schematics Document 2 2 2009-01-13 REV:1.0 3 3 4 4 Security Classification Classification Issued Date Compal Secret Data Title Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


    Original     		PDF LA-4761P DAZ06H00100 KIU10-Tiger CustomKIU10 LA-4761P 0.1u_0603_25v7k GL831 Sil1392 RTL8102EL FBMA-L11-160808-800LMT SST25LF080A_SO8-200mil tx2 0918 KB926 SP02000GC00

    KB910Q

    Abstract: FW82801FBM KB910Q B4 SP093MX0000 FBM-L11-160808-800LMT ML1220T10 FBM-L11-201209-221LMAT BUF C752 D970K NQ82915GM
    Text: Material List by Single-Item/Multi-Level - All -Date : 03/22/2005 Time : 11:33:04 Drawing No: 451336 Plant: CN30 Revision: K Report by UID: 8745064


    Original     		PDF BO001 BO002 BO003 BO004 BO005 451336BO001 LA-2601 EDL00 NV43M/128M 451336BO002 KB910Q FW82801FBM KB910Q B4 SP093MX0000 FBM-L11-160808-800LMT ML1220T10 FBM-L11-201209-221LMAT BUF C752 D970K NQ82915GM

    C3604BD-F

    Abstract: EMI500 samsung r540 100nF 50V X7R samsung 1608 resistor r336 r331 r322 r330 r1 B536 c796 b527 B538 c337 pnp
    Text: - This Document can not be used without Samsung's authorization - 10. Part List 1 Internal System 10/100) Internal System(10/100 Mbit) Location R231 SEC Code Name 2007-000070 R-CHIP 0ohm,5%,1/10W,TP,1608, Specification Quantity 1 2007-000171 R-CHIP 0ohm,5%,1/16W,TP,1005,


    Original     		PDF 512Mbit 8x2Mx32Bit K4J52324QC HYB18H512321AFL C3604BD-F EMI500 samsung r540 100nF 50V X7R samsung 1608 resistor r336 r331 r322 r330 r1 B536 c796 b527 B538 c337 pnp

    transistor C839

    Abstract: c839 transistor
    Text: International îQRjRectifier P D - 9.1128 IRGBC20K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - Ktys @ 125°C, V ge = 15V Vces = 600V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


    OCR Scan     		PDF IRGBC20K TQ-220AB C-842 S54S2 00SDb32 transistor C839 c839 transistor

    c839 transistor

    Abstract: c838 transistor transistor C839 C838 TRANSISTOR c842 C839 C842 C837 VQE 21 d C839 H
    Text: htemational S Rectifier P D -9.1128 IRGBC20K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all 'tail1' losses • Optimized for high operating frequency over 5kHz


    OCR Scan     		PDF IRGBC20K O-22QAB C-842 c839 transistor c838 transistor transistor C839 C838 TRANSISTOR c842 C839 C842 C837 VQE 21 d C839 H

    ZB01

    Abstract: ST C828 MR13B 8008 CPU
    Text: A P P U C A n O N N O ÏE USING SCC WITH Z8000 in sd lc P r o t o c o l This application note describes the uee of the 2803Q Serial Communications Controller Z-SCC with the ZBOOO^ CPU to implement a communica­ tions controller in a Synchronous Data Link


    OCR Scan     		PDF Z8000 2803Q Z8002 Z8530. ZB01 ST C828 MR13B 8008 CPU

    5 input nand gate

    Abstract: MC830P MC932 MC832 MC835 mc1813 MC838 MC846 mc963g truth table for 7 inputs OR gate
    Text: mm\L INTEGRATED CIRCUITS FROM MOTOROLA G MC830 Series 0 to +75°C MC930 Series (-55 to +125°) 2 [ M L IS S l E M D T L inte grated c irc u its p ro vid e an e x c e lle n t balance o f sc-eec p o w e r d is s ip a tio n , and noise im m u n ity fo r general purpose a o ta


    OCR Scan     		PDF MC830 MC930 MC850/MC950 100pF) MC950 5 input nand gate MC830P MC932 MC832 MC835 mc1813 MC838 MC846 mc963g truth table for 7 inputs OR gate

    632 diode

    Abstract: MC830P ceramic case 632 MC836 MC830L MC835 MC830 MC832 MC833 MC858
    Text: INTEGRATED CIRCUITS FROM MOTOROLA IS S u E MC830 Series 0 to +75°C M C930 Series (-5 5 to +125°) M D T L in te g ra te d c ir c u its p r o v id e an e x c e lle n t b a la n c e o f sc-ee-r p o w e r d is s ip a tio n , a n d n o is e im m u n it y f o r g e n e ra l p u rp o s e a c *.3


    OCR Scan     		PDF MC830 MC930 MC850/MC950 632 diode MC830P ceramic case 632 MC836 MC830L MC835 MC832 MC833 MC858