hcl l54
Abstract: t538 LM3935 TXC7A dr3 c502 7A14300038 T596 quanta b30 c300 - 1 South Bridge ALI M1535
Text: 5 4 3 2 1 Model MODEL REV MK3 M/B BOARD 1A 2A CHANGE LIST MK3 M/B BOARD Page FM 1 1A 2 3A PAGE 8 Layout change add R420,R423 for U25 OSC32K,Y3 BOM del 3 3B PAGE11 Layout change add C648 for HWPG,U5 and TC1&D2 BOM del First Release PAGE 2 Layout change add U37,R411,R412,R413,R414,R415,C647 for AMD recommand
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OSC32K
PAGE11
PAGE12
PAGE13
PAGE15
PAGE16
PAGE17
C620for
102K/F
1U/25V
hcl l54
t538
LM3935
TXC7A
dr3 c502
7A14300038
T596
quanta
b30 c300 - 1
South Bridge ALI M1535
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T6800
Abstract: C648 transistor C64 transistor
Text: 19-2715; Rev 2; 1/06 16-Bit DACs with 16-Channel Sample-and-Hold Outputs Ordering Information PART PIN-PACKAGE 64 TQFP MAX5621UTK 68 Thin QFN-EP* MAX5622UCB 64 TQFP MEMS Mirror Servo Control Industrial Process Control Automatic Test Equipment Instrumentation
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16-Bit
16-Channel
MAX5621/MAX5622/MAX5623
100kHz
C64-8*
10x10x1
21-0083D
T6800
C648 transistor
C64 transistor
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Untitled
Abstract: No abstract text available
Text: Aluminum Capacitors Key Benefits • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Large types, cylindrical aluminum case, insulated with a blue sleeve • Pressure relief in the sealing • Efficient design APPLICATIONS • UPS w w w. v i s h a y. c o m
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VMN-PT9206-0704
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Untitled
Abstract: No abstract text available
Text: 19-3563; Rev 1; 5/05 12-Bit DACs with 32-Channel Sample-and-Hold Outputs _Applications MEMS Mirror Servo Control Industrial Process Control Automatic Test Equipment Instrumentation Ordering Information PART TEMP RANGE PIN-PACKAGE MAX5331UCB
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12-Bit
32-Channel
MAX5331/MAX5332/MAX5333
MAX5331/MAX5332/MAX5333
100kHz
MAX5332UTK-T
MAX5332UTK+
MAX5332UTK
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21-0142E
Abstract: 40535 MAX5632UCB D
Text: 19-2171; Rev 3; 1/05 16-Bit DACs with 32-Channel Sample-and-Hold Outputs Ordering Information PART TEMP RANGE* MAX5631UCB 0°C to +85°C 64 TQFP MAX5631UTK 0°C to +85°C 68 Thin QFN MAX5632UCB 0°C to +85°C 64 TQFP MAX5632UTK 0°C to +85°C 68 Thin QFN MAX5633UCB
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16-Bit
32-Channel
MAX5631/MAX5632/MAX5633
100kHz
Remo10x10x0
21-0142E
MAX5633UCB-D
MAX5633UCB
21-0142E
40535
MAX5632UCB D
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MAX5621UTK
Abstract: MAX5623UTK MAX5623 MAX5623UCB MAX5621 MAX5621UCB MAX5622 MAX5622UCB MAX5622UTK C64 transistor
Text: 19-2715; Rev 2; 1/06 16-Bit DACs with 16-Channel Sample-and-Hold Outputs Ordering Information PART PIN-PACKAGE 64 TQFP MAX5621UTK 68 Thin QFN-EP* MAX5622UCB 64 TQFP MEMS Mirror Servo Control Industrial Process Control Automatic Test Equipment Instrumentation
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16-Bit
16-Channel
MAX5621UTK
MAX5622UCB
C64-8
T6800-3
MAX5622UTK
MAX5623UCB
MAX5623UTK
MAX5621UTK
MAX5623UTK
MAX5623
MAX5623UCB
MAX5621
MAX5621UCB
MAX5622
MAX5622UCB
MAX5622UTK
C64 transistor
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Untitled
Abstract: No abstract text available
Text: 19-2715; Rev 2; 1/06 16-Bit DACs with 16-Channel Sample-and-Hold Outputs Ordering Information PART PIN-PACKAGE 64 TQFP MAX5621UTK 68 Thin QFN-EP* MAX5622UCB 64 TQFP MEMS Mirror Servo Control Industrial Process Control Automatic Test Equipment Instrumentation
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16-Bit
16-Channel
MAX5621UTK
MAX5622UCB
C64-8
T6800-3
MAX5622UTK
MAX5623UCB
MAX5623UTK
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AX5621
Abstract: No abstract text available
Text: 19-2715; Rev 2; 1/06 16-Bit DACs with 16-Channel Sample-and-Hold Outputs Ordering Information PART PIN-PACKAGE 64 TQFP MAX5621UTK 68 Thin QFN-EP* MAX5622UCB 64 TQFP MEMS Mirror Servo Control Industrial Process Control Automatic Test Equipment Instrumentation
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16-Bit
16-Channel
MAX5621/MAX5622/MAX5623
100kHz
AX5621
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C644 transistor
Abstract: C641 transistor transistor c644 transistor C641 IRGP440UD2 C646 diode 400v 2A ultrafast
Text: PD - 9.1064 IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz
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IRGP440UD2
O-247AC
C-648
C644 transistor
C641 transistor
transistor c644
transistor C641
IRGP440UD2
C646
diode 400v 2A ultrafast
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C644 transistor
Abstract: C645 transistor transistor c644 diode C646 transistor C641 igbt 500V 15A C644 C646 C641 transistor IRGP440UD2
Text: PD - 9.1064 IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz
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IRGP440UD2
O-247AC
C-648
C644 transistor
C645 transistor
transistor c644
diode C646
transistor C641
igbt 500V 15A
C644
C646
C641 transistor
IRGP440UD2
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transistor c644
Abstract: C641 transistor C644 transistor C645 transistor IRGP440UD2 igbt 500V 15A transistor 2a 20v 5w transistor C641
Text: Previous Datasheet Index Next Data Sheet PD - 9.1064 IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes
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IRGP440UD2
O-247AC
C-648
transistor c644
C641 transistor
C644 transistor
C645 transistor
IRGP440UD2
igbt 500V 15A
transistor 2a 20v 5w
transistor C641
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W4DC105
Abstract: LP 8029 TR C458 w4dc162 W4DC132 NCT200 Thyristor w4dc162 w4dc162 pm W4DA250 w4da105
Text: Note: The data supplied in the enclosed tables is for general reference only. As data was collected from a number of sources, Richardson Electronics, Ltd. and its affiliates are not liable for its accuracy. Richardson Electronics, Ltd. and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Richardson Electronics makes no warranty, representation or guarantee regarding
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comp70
90461435/WF5000/CR
W4DC105
LP 8029
TR C458
w4dc162
W4DC132
NCT200
Thyristor w4dc162
w4dc162 pm
W4DA250
w4da105
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DS493
Abstract: No abstract text available
Text: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 11. Mai n System PartLi st CODE DESCRI PTI ON REFERENCE EA 3920501 j ack-usb-4p-mnt4,JACK-USB;-,-,-,-,- J505 J2501 J2502 3 0401-000191 di ode,DI ODE-SWI TCHI NG;MMBD4148,75V,200MA,SOT-23,TP
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C2625 transistor
Abstract: C5679 transistor TRANSISTOR C3675 C5679 C2655 NPN Transistor transistor c5855 c3746 transistor transistor c3746 transistor C4770 c5855
Text: Rack & Cabinet Mounting Converters 150-12 k Watts C SERIES CE Marked - LVD & EMC • Over 1700 Different Models • DC Inputs 10 - 900 Volts • Single & Multi Outputs • Fully Wired Customised Racks • Parallel Redundant Systems • Euro Cassette or Wall Mount
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C300-C4700,
C5600-C5800
C2625 transistor
C5679 transistor
TRANSISTOR C3675
C5679
C2655 NPN Transistor
transistor c5855
c3746 transistor
transistor c3746
transistor C4770
c5855
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C712L
Abstract: TO200AC C648PB c712pd C612L c712pn C713 C612 C613 C648E
Text: INVERTER SCRs RICHARDSON/ NATIONAL EL LEE D NATIONAL T Y P E NO. VOLTAGE R A N G E Peak on-state sinusoidal current @ Tc =65°C, 50% duty A I tim • 7734T17 OOOOL'ìS 57b ■ NAT C612 C613 C648 C712 C713 1300-2000 1300-2000 500-1200 1300-2000 1300-2000
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7734T1?
C648N
C648T
C648P
C648PA
C648PB
C612PC
C613PC
C712PC
C713PC
C712L
TO200AC
C648PB
c712pd
C612L
c712pn
C713
C612
C613
C648E
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GE C712
Abstract: C612 C613 C648 C648E C648M C648P C648T C712 SCR firing inverter circuit
Text: 700 TO 1500 AMPERES C648 C612 C 613 C 712 A M P L IF Y IN G G ATE A M P L IF Y IN G G A TE A M P L IF Y IN G G A TE A M P L IF Y IN G GATE 5 00 1200 1500-1800 GE TYPE CONSTRUCTION ELECTRICAL SPECIFICATIONS VOLTAGE RANGE 1500-2000 S 1500-2000 FORWARD CONDUCTION
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488BHIIMIÃ
GE C712
C612
C613
C648
C648E
C648M
C648P
C648T
C712
SCR firing inverter circuit
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GE C712 thyristor
Abstract: GE C712 scr c712l C712L c712l thyristor SCR 400V 1000A SCR C712 SCR C648 GE thyristor scr SCR C612
Text: 700 TO 1500 A M P E R E S C648 C612 C613 C712 A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE 500 1200 1500-1800 1150 700 800 1150 700 800 1500 - 800 1500 GE TYPE CONSTRUCTION ELECTRICAL SPECIFICATIONS VOLTAGE RANGE
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488BHIIMIÃ
GE C712 thyristor
GE C712
scr c712l
C712L
c712l thyristor
SCR 400V 1000A
SCR C712
SCR C648
GE thyristor scr SCR
C612
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alcoa electrical joint compound
Abstract: SF1154 C613 3M Electric Joint Compound C612 C648 C648E C648M C648P C648T
Text: 700 TO 1500 AMPERES C648 C612 C613 C712 A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE 500 1200 1 5 0 0 -1 8 0 0 GE TYPE CONSTRUCTION ELE C T R IC A L SPECIFIC AT IO N S VO LTAG E RANG E FO RW ARD CONDUCTION . 'T R M S
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OCR Scan
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PDF
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488BHIIMIÃ
SF1154
SF1154,
G322L
LS2037
G322L,
alcoa electrical joint compound
C613
3M Electric Joint Compound
C612
C648
C648E
C648M
C648P
C648T
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diode c648
Abstract: C648 GE SCR 1000 AMP scr c385 GE SCR C648 c358 C612 C613 C648E 25C312
Text: 700 TO 1500 A M P E R E S C648 C612 C613 C712 A M P L IF Y IN G G A TE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE 500 1200 1500-1800 1150 700 800 1150 700 800 1500 - 800 1500 GE TYPE CONSTRUCTION ELE C T R IC A L SPECIFIC AT IO N S
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OCR Scan
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PDF
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488BHIIMIÃ
SF1154,
G322L
diode c648
C648
GE SCR 1000 AMP
scr c385 GE
SCR C648
c358
C612
C613
C648E
25C312
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GE SCR 1000 AMP
Abstract: diode c648 C648T GE SCR 1000 C358 C385 C388 C395 C398 C648
Text: INVERTER SCR's SELECTOR GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 g 800 < 700 600 500 tf IO 400 u V * 300 IO fO o <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 4 0 0 500 700 800 850 9 0 0 1000 1150 1500
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OCR Scan
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SF1154,
G322L
GE SCR 1000 AMP
diode c648
C648T
GE SCR 1000
C358
C385
C388
C395
C398
C648
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xl 6009
Abstract: A/xl 6009 tr K 2761 p 01 k 2761 powerex C713
Text: POUEREX INC 74 D E1I 7 2 ^ 2 1 000112b 4 | ~ T -Z S - 5.2 Condensed Electrical And Thermal Characteristics And Ratings INVERTER SCRs 1100 TO 1550 AMPERES 276.1 GETYPE CONSTRUCTION SPECIFICATIONS Voltage Range Forward Conduction Max. forward conduction sinusoidal:
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000112b
non50
00V//tsec
MAX/10
xl 6009
A/xl 6009
tr K 2761
p 01 k 2761
powerex C713
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c458
Abstract: thyristor TO-200AB FBS-24 T82F diode c648 t9gh C444 C445 C648 C712
Text: "ÏÏ POUEREX INC ] F| 72T4b21 OOQlflQl S Inverter Grade SCRs 72 9 4 6 2 1 POWERFy INC 9 1 D 01801 D T"-' Z'S' -ze> I t rms > 7c =65° C 50% D u ty Id r m /Ir rm Vtm Itm l* t @ fo r V d rm /V rrm Fusin g Vdrm /V rrm a n d Tj(Max) @ 8 .3 m s Range (A 2s e c x 10*)
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PDF
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FT1500EX
0FT1500EY
O-200AB
CA358-1
CA358-2
CA383-1
CA383-2
c458
thyristor TO-200AB
FBS-24
T82F
diode c648
t9gh
C444
C445
C648
C712
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transistor C641
Abstract: C641 transistor igbt 500V 22A diode c648 C648 IRGP440UD2 igbt 500V 15A C643
Text: International [k?rIRectifier P D -9.1064 IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz
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OCR Scan
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PDF
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IRGP440UD2
C-647
Fi9-18d
O-247AC
transistor C641
C641 transistor
igbt 500V 22A
diode c648
C648
igbt 500V 15A
C643
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2N2222A mps
Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
Text: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71
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1N34A
1N55AB
1N100
1N102
1N103
1N104
1N107
1N108
1N111/
1N117
2N2222A mps
2N512AB
2n2222 mps
1N1096
1N589
1n4007 - 2n4001
2N698 SCR
1N233A
1N20461
2N3304
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