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    C631 TRANSISTOR Search Results

    C631 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    C631 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRGB430UD2

    Abstract: diode c631 c627 DIODE c628 DIODE
    Text: PD - 9.1067 IRGB430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    Original     		PDF IRGB430UD2 O-220AB C-632 IRGB430UD2 diode c631 c627 DIODE c628 DIODE

    c628 DIODE

    Abstract: IRGB430UD2 C628 transistor diode c631 transistor C629 C632 c626 diode
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1067 IRGB430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes


    Original     		PDF IRGB430UD2 O-220AB C-632 c628 DIODE IRGB430UD2 C628 transistor diode c631 transistor C629 C632 c626 diode

    transistor C632

    Abstract: c628 DIODE igbt 500V 15A C628 transistor transistor c625 diode c631 IRGB430UD2 irgb430ud c627 DIODE
    Text: PD - 9.1067 IRGB430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    Original     		PDF IRGB430UD2 O-220AB C-632 transistor C632 c628 DIODE igbt 500V 15A C628 transistor transistor c625 diode c631 IRGB430UD2 irgb430ud c627 DIODE

    TRANSISTOR SMD 13W

    Abstract: CFL inverter circuit schematic diagram 230v CFL circuit diagram cfl circuit diagram cfl ballast philips cfl 13W 13w cfl circuit led lamp 230v circuit diagram schematic lamp ballast BALLAST CFL
    Text: APPLICATION NOTE CFL 13W demo PCB with UBA2021 for integrated lamp-ballast designs AN99066 replaces previous version AN98091 Philips Semiconductors Philips Semiconductors CFL 13W demo PCB with UBA2021 for Integrated lamp-ballast designs Application Note


    Original     		PDF UBA2021 AN99066 AN98091) PR38922 PR39001) 230Vrms PHU2N60 PHU2N50) TRANSISTOR SMD 13W CFL inverter circuit schematic diagram 230v CFL circuit diagram cfl circuit diagram cfl ballast philips cfl 13W 13w cfl circuit led lamp 230v circuit diagram schematic lamp ballast BALLAST CFL

    CFL inverter circuit schematic diagram

    Abstract: cfl circuit diagram of 12 volts 3 CFL inverter circuit schematic diagram cfl ballast cfl circuit diagram AN98091 CE167V cfl circuit diagram of 6 volts PHU2N60E BALLAST CFL
    Text: AN98091 CFL 13 W demo PCB with UBA2021 for integrated lamp-ballast designs Rev. 02 — 29 December 2008 Application note Document information Info Content Keywords CFL ballast, UBA2021, compact, half-bridge, driver circuit Abstract A description is given of a 13 W electronic CFL ballast SMD demo board


    Original     		PDF AN98091 UBA2021 UBA2021, PR38922 PR39001) PHU2N60 PHU2N50) AN98091 CFL inverter circuit schematic diagram cfl circuit diagram of 12 volts 3 CFL inverter circuit schematic diagram cfl ballast cfl circuit diagram CE167V cfl circuit diagram of 6 volts PHU2N60E BALLAST CFL

    KA4312

    Abstract: SMPS CIRCUIT DIAGRAM 12v 5v circuit diagram of 24V 20A SMPS PC6001 5v to 12v supply voltage smps SMPS CIRCUIT DIAGRAM 5V 20A 5v pc smps pwm design smps 3.3v 5v transistor ka431 SMPS CIRCUIT DIAGRAM USING TRANSISTORS
    Text: November 2,1999 AN4002 PC Power Supervisory Circuit with KA3502 Su-Gyeong Kim 1. General Description The KA3502 features complete housekeeping circuitry for use in the secondary side of SMPS Switched Mode Power Supply . It contains various functions, including two Precision Voltage References, Over Voltage and Current Protection, Remote On/Off Control, Power Good Signal Generator, Disable Logic, etc.


    Original     		PDF AN4002 KA3502 KA3502 20-pin V/5V/12V/Adj. KA4312 SMPS CIRCUIT DIAGRAM 12v 5v circuit diagram of 24V 20A SMPS PC6001 5v to 12v supply voltage smps SMPS CIRCUIT DIAGRAM 5V 20A 5v pc smps pwm design smps 3.3v 5v transistor ka431 SMPS CIRCUIT DIAGRAM USING TRANSISTORS

    C2625 transistor

    Abstract: C5679 transistor TRANSISTOR C3675 C5679 C2655 NPN Transistor transistor c5855 c3746 transistor transistor c3746 transistor C4770 c5855
    Text: Rack & Cabinet Mounting Converters 150-12 k Watts C SERIES CE Marked - LVD & EMC • Over 1700 Different Models • DC Inputs 10 - 900 Volts • Single & Multi Outputs • Fully Wired Customised Racks • Parallel Redundant Systems • Euro Cassette or Wall Mount


    Original     		PDF C300-C4700, C5600-C5800 C2625 transistor C5679 transistor TRANSISTOR C3675 C5679 C2655 NPN Transistor transistor c5855 c3746 transistor transistor c3746 transistor C4770 c5855

    C735

    Abstract: C749 NPN C460 C644 BS9300 c495 C-725 CV7580 c496 c727
    Text: 7 BS9000 Converted CV Case Outlines Small Signal Transistors . B S Type Number Com m ercial Equivalent Case Outline Polarity Ab solute Maximum Rating VCB V VCE V h F E at Co llecto r Current VEB V hFE min. hFE max. 1C mA M in. fT MHz Com m ents 0-76 0 -4 8 0


    OCR Scan     		PDF BS9000 8S9300 BS9300 2N2221A' 2N2222A* 2N1893 2N1613 C735 C749 NPN C460 C644 c495 C-725 CV7580 c496 c727

    C495 transistor

    Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
    Text: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250


    OCR Scan     		PDF BF594 BF594, BF194 BF595 BF195 BF597 BF197 2N4996 BS9300 2N2219A C495 transistor BF194 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495

    c628 DIODE

    Abstract: diode c626 DIODE c629 diode c631 c632 DIODE c630 diode 3g50 irf 2030 IRFPG52 diode c630
    Text: INTERNATIONAL RECTIFIER HE D I 4flSS4SE Data Sheet No. PD-9.543A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I 0 R REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS IRFPG5G IRFPG52 N-CHANNEL Product Summary 1000 Volt, 2.0 Ohm HEXFET TO-247AC TO-3P Plastic Package


    OCR Scan     		PDF O-247AC C-631 IRFPG50, IRFPG52 T-39-15 C-632 c628 DIODE diode c626 DIODE c629 diode c631 c632 DIODE c630 diode 3g50 irf 2030 diode c630

    NPN C460

    Abstract: 2N2907 equivalent c496 2N2906 equivalent 2N2905 equivalent 2n2484 complementary 2N2907 t018 C735 BS9300 CV7496
    Text: Metal Can Complementary Pairs Core Drivers | Polarity Maximum ratin ps 2N 3724A 2N 372 5A NPN N PN T039 T0 3 9 50 80 30 50 6 6 1200 1200 100 100 60 60 150 150 1500 1500 25 20 — - 300 300 100 100 0.20 0.26 2N 3244 PN P T0 3 9 40 40 5 1000 500 50 150 750 25


    OCR Scan     		PDF 2N3724A 2N3725A 2N3244 BF257 BS9300 2N2219A 2N2221 2N2222 NPN C460 2N2907 equivalent c496 2N2906 equivalent 2N2905 equivalent 2n2484 complementary 2N2907 t018 C735 CV7496

    C495 transistor

    Abstract: C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633
    Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a sm all extra


    OCR Scan     		PDF BCW35GP. BS9300 2N2219A 2N2221 2N2222 2N2221A fT018 C495 transistor C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633

    C495 transistor

    Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460
    Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450


    OCR Scan     		PDF 4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 BS9300 2N2219A C495 transistor c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 transistor C633 NPN C460

    NPN pnp MATCHED PAIRS 2n2905A 2N2219A

    Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
    Text: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW


    OCR Scan     		PDF BS9365 2N4036 2N4037 BS3365 2N4030 2N4031 NPN pnp MATCHED PAIRS 2n2905A 2N2219A BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62

    C621

    Abstract: SD5013 2N551 transistor c640 npn Transistors 2n551
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF

    C736

    Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
    Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450


    OCR Scan     		PDF 4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 BS9300 2N2219A C736 C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633

    C495 transistor

    Abstract: c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor
    Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra


    OCR Scan     		PDF BCW35GP. BS9300 2N2219A 2N2221 2N2222 2N2221A fT018 C495 transistor c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor

    2SK19Y

    Abstract: C682 2SK19GR X70a FSP400 40468 C621 K1202 C682A C684
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 2SK19Y C682 2SK19GR X70a FSP400 40468 C621 K1202 C682A C684

    transistor C624

    Abstract: T120TA 2N2457 B3 ho transistor C621 RT1111 2N1468 CK277 KVT 50/102n 3500 2SC502
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 TIX882 transistor C624 T120TA 2N2457 B3 ho transistor C621 RT1111 2N1468 CK277 KVT 50/102n 3500 2SC502

    transistor c640 npn

    Abstract: 2N2458 l0ua 2N2457 mm2102t transistor C640 transistor 2n2457 RT1116 TIX882 IDSS-100mA
    Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised S p ecificatio ns # N o n-JE D E C ty p e m a n u fa ctu re d outsid e u :s . a . t S w itc h in g ty p e , also lis te d in S e c tio n 12


    OCR Scan     		PDF THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 TIX882 transistor c640 npn 2N2458 l0ua 2N2457 mm2102t transistor C640 transistor 2n2457 RT1116 IDSS-100mA

    GM300

    Abstract: CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


    OCR Scan     		PDF NPN110. THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 GM300 CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn

    2n2709

    Abstract: C621 2N4411 c643 OC44 400M BSV55AP BSV55P T072 GM300
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 TIX882 2n2709 C621 2N4411 c643 OC44 400M BSV55AP BSV55P T072 GM300

    18200T

    Abstract: germanium low power 150mW 460MSA 2N2097A C621 LM 18200T P1004 RT1116 2SC814 transistor C633
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 TIX882 18200T germanium low power 150mW 460MSA 2N2097A C621 LM 18200T P1004 RT1116 2SC814 transistor C633

    U22 2.5A 250V

    Abstract: P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C


    OCR Scan     		PDF NPN110. THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 U22 2.5A 250V P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644