Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD DTC143T NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR BUILT- IN BIAS RESISTORS 3 FEATURES 1 2 EQUIVALENT CIRCUIT B SOT-23 3 * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to
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DTC143T
OT-23
OT-323
OT-523
DTC143TL
DTC143T-AE3-R
DTC143TL-AE3-R
DTC143T-AL3-R
DTC143TL-AL3-R
DTC143T-AN3-R
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MARKING C5T
Abstract: DTC143TL c5t marking DTC143T DTC143T-AE3-R DTC143T-AL3-R DTC143T-AN3-R c5t sot23
Text: UNISONIC TECHNOLOGIES CO., LTD DTC143T NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR BUILT- IN BIAS RESISTORS 3 FEATURES 1 2 EQUIVALENT CIRCUIT B SOT-23 3 * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to
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DTC143T
OT-23
OT-323
OT-523
DTC143TL
DTC143T-AE3-R
DTC143TL-AE3-R
DTC143T-AL3-R
DTC143TL-AL3-R
DTC143T-AN3-R
MARKING C5T
DTC143TL
c5t marking
DTC143T
DTC143T-AE3-R
DTC143T-AL3-R
DTC143T-AN3-R
c5t sot23
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T60403-D4615-X054
Abstract: T60403-D4615 D72B ff450r12me3 IGBT DRIVER SCHEMATIC 2ED100E12 FF450R06ME3 2ED100E12-F IGBT DRIVER Analog Devices TD350 tyco igbt module
Text: A p p li c at i o n N o t e, V1. 0 , May. 2 0 0 6 AN2006-04 2 E D1 0 0E 1 2 -F Evaluation Driver Board for EconoDUALTM IGBT Modules AIM PMD ID AE Edition 2006-11-20 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2006.
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AN2006-04
2ED100E12-F
FF600R06ME3
FF150R12ME3
FF225R12ME3
FF300R12ME3
FF450R12ME3
FF150R12MS4
FF225R12MS4
T60403-D4615-X054
T60403-D4615
D72B
ff450r12me3
IGBT DRIVER SCHEMATIC
2ED100E12
FF450R06ME3
IGBT DRIVER Analog Devices TD350
tyco igbt module
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ff450r12me3
Abstract: C28T sod6 SOT23 transistor R2C t60403-d4615 C-EUC1206 IGBT DRIVER SCHEMATIC 2ED100E12 ge c30b IGBT DRIVER SCHEMATIC chip
Text: Application Note, V1.2, Aug. 2009 AN2008-02 2ED100E12-F2_EVAL 6ED100E12-F2_EVAL Evaluation Driver Board for EconoDUAL 3 and EconoPACK™+ modules Industrial Power Edition 2009-11-02 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2009.
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AN2008-02
2ED100E12-F2
6ED100E12-F2
AN2007-04,
ff450r12me3
C28T
sod6
SOT23 transistor R2C
t60403-d4615
C-EUC1206
IGBT DRIVER SCHEMATIC
2ED100E12
ge c30b
IGBT DRIVER SCHEMATIC chip
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PDF
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VAC t60403
Abstract: ff450r12me3 SOD323R T60403 IGBT DRIVER SCHEMATIC t60403-d4615 T60403-D4615-X054 2ED100E12 AN2007-04 IGBT DRIVER SCHEMATIC chip
Text: Application Note, V1.2, Aug. 2009 AN2008-02 2ED100E12-F2_EVAL 6ED100E12-F2_EVAL Evaluation Driver Board for EconoDUAL 3 and EconoPACK™+ modules Industrial Power Edition 2009-10-07 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2009.
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AN2008-02
2ED100E12-F2
6ED100E12-F2
AN2007-04,
VAC t60403
ff450r12me3
SOD323R
T60403
IGBT DRIVER SCHEMATIC
t60403-d4615
T60403-D4615-X054
2ED100E12
AN2007-04
IGBT DRIVER SCHEMATIC chip
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AM93422
Abstract: CD4022 AM93L422 am93l422a AM93L422PC 93L422
Text: A m 93L 412/93L 422 256 x 4-Bit Low-Power TTL Bipolar IMOX RAM • • • High-speed Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature Output preconditioned during write to eliminate write recovery glitch • •
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OCR Scan
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Am93L412/93L422
Am93L412/L422
1024-bit
256-word
MIL-STD-883,
AM93422
CD4022
AM93L422
am93l422a
AM93L422PC
93L422
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PDF
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AS2830AT
Abstract: AS2830AU AS2830 lt1085 linear AS2830 alpha
Text: ALPHA SEMICONDUCTOR AS2830 Excellence in Analog Power Products 3.0A Low Dropout Voltage Regulator Adjustable FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • • Adjustable Output Down to 1.2V Output Current o f 3A
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OCR Scan
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AS2830
O-220
LT1085
AS2830.
TI--55
AS2830AT
AS2830AU
AS2830
lt1085 linear
AS2830 alpha
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PDF
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Untitled
Abstract: No abstract text available
Text: PF063-04 SMM2365C CMOS 64K-BIT MASK ROM #Low Supply Current #Access Time 350ns/450ns #8,192 Words X 8 Bits Asynchronous • DESCRIPTION The SMM2365C is an 8,192 words x 8 bits asynchronous, static, mask programmable ROM on a monolithic CMOS chip and is characterized by fast access time and very low power dissipation. The nature "static”
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OCR Scan
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PF063-04
SMM2365C
64K-BIT
350ns/450ns
472Max
445-00M
28-pin
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Untitled
Abstract: No abstract text available
Text: PF306-02 SMM6365C CMOS 64K-BIT MASK ROM #Low Power Dissipation •A ccess Time 250ns #8,192 Words X 8 Bits Asynchronous • DESCRIPTION The S M M 6 3 6 5 C is an 8,1 9 2 w ords x 8 bits asynchronous CMOS mask program m able ROM. This device operates on a single pow er supply, its input and o utput levels are TTL com patible and the o utputs are
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PF306-02
SMM6365C
64K-BIT
250ns
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AM93422
Abstract: CD4022 93L422 am93l422
Text: A m 93L 412/93L 422 256 x 4-Bit Low-Power TTL Bipolar IMOX RAM • • • High-speed Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature Output preconditioned during write to eliminate write recovery glitch • •
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OCR Scan
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Am93L412/93L422
Am93L412/L422
1024-bit
256-word
MIL-STD-883,
AM93422
CD4022
93L422
am93l422
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PDF
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1N 473A
Abstract: A1258 MO-105 NASA Group 5962-K646-3 M3167
Text: M I L - M - 3 85 10 /4 73 A N AS A IREQUIR EM EN TS I REMOVED 30 September 1983 S T T P m n m r c -MIL-M-38510/473(NASA) 17 No ve m b e r 1980 I MILITARY SPECIFICATION MICROC IR CU IT S, DIGITAL, CMOS, M O N O L I T H I C 8 -BIT INPU T/ OU TP UT PORT
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OCR Scan
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IL-M-38510/473A
MIL-M-38510/473
MIL-M-38510
MIL-M-38510.
5962-K646-3)
705-040/A1
1N 473A
A1258
MO-105
NASA Group
5962-K646-3
M3167
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512x 8 ROM
Abstract: No abstract text available
Text: PF138-03 SMM6312C CMOS 128K-BIT MASK ROM #Low Supply Current #Access Time 250ns #16,384 Words X 8 Bits Asynchronous • DESCRIPTION The SMM6312C is a 16,384 words x 8 bits asynchronous CMOS mask programmable ROM. This device operates on a single power supply, its input and output levels are TTL compatible and the outputs are 3 state
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OCR Scan
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PF138-03
SMM6312C
128K-BIT
250ns
512x 8 ROM
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max1993
Abstract: 10POW
Text: May 1993 Edition 1.0 FUJITSU DATA S H E E T MB82208-25/-35 CMOS 4M-BIT HIGH SPEED SRAM 524,288-WORD X 8-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82208 is 524,288-word x 8-bit high speed static random access memory fabricated with CMOS technology.
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OCR Scan
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MB82208-25/-35
288-WORD
MB82208
400mil
SD-07289-1
0-93-DS
max1993
10POW
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Untitled
Abstract: No abstract text available
Text: IIM II R B September 1989 HM 65664 DATASHEET 8 Kx8 ULTIMATE CMOS SRAM FEATURES . . . ACCESS TIME MILITARY/INDUSTRIAL : 45/55 ns max COMMERCIAL : 35/45 ns (max) VERY LOW POWER CONSUMPTION ACTIVE : 175.0 mW (typ) STANDBY : 2.0 |iW (typ) DATA RETENTION : 0.8 nW (typ)
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M5M51T08ARV
Abstract: AFP10
Text: MITSUBISHI LSIs M5M51T08AP,FP,VP,RV-55SL 1048576-BIT 131072-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION Thd M5M51T08AP, FP, VP, RV are a 1046576 bit CMOS state RAM organized as 131072 word by 8 - bit which are fabrcated using high - performance quadruple polysilicon
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OCR Scan
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M5M51T08AP
RV-55SL
1048576-BIT
131072-WORD
M5M51T08AP,
32-pin
M5M51T08ARV
AFP10
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PDF
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93422 amd
Abstract: AM93422 AM93422ADMC 93422 ram
Text: Am93412/93422 Am93412/93422 256 x 4-Bit TTL Bipolar IMOX RAM DISTINCTIVE CHARACTERISTICS • • • • High-speed Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature Output preconditioned during write to eliminate write
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OCR Scan
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Am93412/93422
Am93412/22
1024-bit
256-word
MIL-STD-883,
93422 amd
AM93422
AM93422ADMC
93422 ram
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PDF
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LA5664
Abstract: c 5664 pinout MATRA MHS HM* 28 pins
Text: Tem ic L 65664 MATRA MHS 8 K x 8 / 3.3 Volts Ultimate CMOS SRAM Introduction The L65664 is a very low power CMOS static RAM organized as 8192 x 8 bits. It is manufactured using the MHS high performance SCMOS technology. current typical value = 0.1 (J.A with a fast access time of
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L65664
LA5664
c 5664 pinout
MATRA MHS HM* 28 pins
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PDF
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Wien Bridge Oscillator
Abstract: No abstract text available
Text: I I . A \ Advanced I L in e a r D e v ic e s ALD2711A/ALD2711B ALD2711 DUAL MICROPOWER PRECISION RAIL TO RAIL CMOS OPERATIONAL AMPLIFIER GENERAL DESCRIPTION PIN CONFIGURATION The ALD 2711 is a dual monolithic CMOS micropower precision high slew-rate operational amplifier intended for a broad range of analog
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OCR Scan
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ALD2711A/ALD2711B
ALD2711
Wien Bridge Oscillator
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PDF
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AM93422
Abstract: 93422 ram AM93422ADMC Am93412A PD022
Text: A m 93412/93422 Am93412/93422 256 X 4-Bit TTL Bipolar IMOX RAM DISTINCTIVE CHARACTERISTICS • • • High-speed Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature Output preconditioned during write to eliminate write
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OCR Scan
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Am93412/93422
Am93412/22
1024-bit
256-word
MIL-STD-883,
AM93422
93422 ram
AM93422ADMC
Am93412A
PD022
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PDF
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AM93l422
Abstract: TW000040 st gex 21 diode
Text: Am93L412/93L422 256 x 4-Bit Low-Power TTL Bipolar IMOX RAM DISTINCTIVE CHARACTERISTICS • • • High-speed Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature Output preconditioned during write to eliminate write
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OCR Scan
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Am93L412/93L422
Am93L412/L422
1024-bit
256-word
MIL-STD-883,
AM93l422
TW000040
st gex 21 diode
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PDF
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AM93422
Abstract: AM93422PC fzh 101 AM93422a fzh 141 AM93422D FZH 135 CD4022 93422 ram 93422
Text: Am 93412 /9 3 4 2 2 Am93412/93422 256 x 4-Bit TTL Bipolar IMOX RAM DISTINCTIVE CHARACTERISTICS • • • High-speed Internal ECL circuitry for optimum sp ee d /p o w e r perfor mance over voltage and temperature Output preconditioned during write to elim inate write
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OCR Scan
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Am93412/93422
Am93412/22
1024-bit
256-word
MIL-STD-883,
AM93422
AM93422PC
fzh 101
AM93422a
fzh 141
AM93422D
FZH 135
CD4022
93422 ram
93422
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PDF
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TSC7211AMIPL
Abstract: TSC7211AM TSC700 tsc7211 TSC700A four digit seven segment lcd TSC7212A 7 segment led display 30 pin .39" 10 pin seven segment display TSC7212AMIPL
Text: TELEDYNE COMPONENTS 2ÛE D Ml Ü*tt?b02 0ûQSb72 3 • "PrTELEDYNE SEMICONDUCTOR TShi 7 A TSC72Í1AM TSC7212AM OiAn/ll Processing Dw/»àeei'n/l Company P/ilrinoni/ The Analog Signal BUS COMPATIBLE FOUR DIGIT CMOS DECODER/DRIVER FEATURES TSC7211AM LCD DRIVER
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QSb72
TSC72
TSC7212AM
TSC7211AM
ICM7211AM
TSC7212
T-51-17
TSC7211AM
TSC7211AMIPL
TSC700
tsc7211
TSC700A
four digit seven segment lcd
TSC7212A
7 segment led display 30 pin
.39" 10 pin seven segment display
TSC7212AMIPL
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PDF
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CXP80524
Abstract: CXP80P524 fuji lot code format
Text: CXP80P524 SONY CMOS 8-bit Single Chip Microcomputer Description The CXP80P524 is a CMOS 8-bit microcomputer which consists of arithmetic coprocessor, A/D converter, serial interface, timer/counter, time base timer, vector Interruption, high precision timing pattern
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OCR Scan
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CXP80P524
CXP80524
HC-49/U-03
80-pin
bytes/24K
CXP80P524Q-1-
80-ptn
FP-80P-L01
fuji lot code format
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PDF
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Untitled
Abstract: No abstract text available
Text: ,UJNY CXP87532/87540 CMOS 8-bit Single Chip Microcomputer Description The CXP87532/87540 is a CMOS 8-bit micro computer which consists of arithmetic coprocessor, A/D converter, serial interface, timer/counter, time base timer, vector interruption, high precision timing
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OCR Scan
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CXP87532/87540
CXP87532/87540
16-bit
P87532/87540
00P-L01
QFP100-P-1420
42/COPPER
LQFP-100P-L01
LQFP1GG-P-1414
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