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    C5460 TRANSISTOR Search Results

    C5460 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C5460 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SC5460 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications Unit: mm High-Voltage Amplifier Applications • High breakdown voltage: VCEO = 800 V Maximum Ratings Tc = 25°C Characteristics


    Original
    PDF 2SC5460

    2SC5460

    Abstract: C5460
    Text: 2SC5460 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications Unit: mm High-Voltage Amplifier Applications • High breakdown voltage: VCEO = 800 V Maximum Ratings Tc = 25°C Characteristics


    Original
    PDF 2SC5460 2SC5460 C5460

    Untitled

    Abstract: No abstract text available
    Text: 2SC5460 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications Unit: mm High-Voltage Amplifier Applications • High breakdown voltage: VCEO = 800 V Absolute Maximum Ratings Tc = 25°C Characteristics


    Original
    PDF 2SC5460

    2SC5460

    Abstract: C5460 TRANSISTOR
    Text: 2SC5460 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications High-Voltage Amplifier Applications • Unit: mm High breakdown voltage: VCEO = 800 V Absolute Maximum Ratings Tc = 25°C Characteristics


    Original
    PDF 2SC5460 2SC5460 C5460 TRANSISTOR

    2SC5460

    Abstract: C5460
    Text: 2SC5460 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications High-Voltage Amplifier Applications • Unit: mm High breakdown voltage: VCEO = 800 V Absolute Maximum Ratings Ta = 25°C Characteristics


    Original
    PDF 2SC5460 2SC5460 C5460

    transistor c3150

    Abstract: c3271 KEMA KEUR thermostat C4108
    Text: What’s New? E X PA N D E D C O M P E T I T I V E O F F E R I N G S Cross-Reference & Online Spec Sheets We have expanded our Carol Brand Electronics offering and now have more competitive crosses than anyone. Many of these cables are in stock and ready for


    Original
    PDF E3842S E3843S EO24C0045510 EO26C0045510 EO28C0045510 EO28P0181510 EO28P0501510 EO30C0045510 SP00C0011010 SP00C0012010 transistor c3150 c3271 KEMA KEUR thermostat C4108

    C5802

    Abstract: c1226a modern china tv 8893 circuit diagram c5888 Reducing sleeve, AWG 16-20 8741 substitution
    Text: What’s New? E X PA N D E D C O M P E T I T I V E O F F E R I N G S Cross-Reference & Online Spec Sheets We have expanded our Carol Brand Electronics offering and now have more competitive crosses than anyone. Many of these cables are in stock and ready for


    Original
    PDF E3842S E3843S EO24C0045510 EO26C0045510 EO28C0045510 EO28P0181510 EO28P0501510 EO30C0045510 SP00C0011010 SP00C0012010 C5802 c1226a modern china tv 8893 circuit diagram c5888 Reducing sleeve, AWG 16-20 8741 substitution