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    C5030 TRANSISTOR Search Results

    C5030 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C5030 TRANSISTOR Datasheets Context Search

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    C5030 transistor

    Abstract: equivalent of transistor c5030 2SC5030 C5030 transistor 2sc5030
    Text: 2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 0.5 V (max)


    Original     		PDF 2SC5030 C5030 transistor equivalent of transistor c5030 2SC5030 C5030 transistor 2sc5030

    C5030 transistor

    Abstract: No abstract text available
    Text: 2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 0.5 V (max)


    Original     		PDF 2SC5030 C5030 transistor

    C5030 transistor

    Abstract: No abstract text available
    Text: 2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 0.5 V (max)


    Original     		PDF 2SC5030 C5030 transistor

    schematic diagram 180v dc motor speed controller

    Abstract: C4106 transistor C4106 t5001 ic tl8850ap c4060 transistor tl8850 C6113 EM-553-F9T C4054 transistor
    Text: A B C D E F G H AIWA VX-G142 OPERATION 1 SCHEMATIC DIARGAM 8 8 OPERATION 1 PCB 7 7 OS753 GP1U281R 3 GND FROM OPERATION 2 B+ 1 Vout 6 ATR LED 7 T-REC LED 8 REC LED PLAY BACK LED SW Q758 DTC114TS C751 100P B W804 1 PLAY BACK D795 270 R754 270 R793 W801 POWER LED SW


    Original     		PDF VX-G142 OS753 GP1U281R EM-553-F9T DTC114TS CY759 EQ-552F9T schematic diagram 180v dc motor speed controller C4106 transistor C4106 t5001 ic tl8850ap c4060 transistor tl8850 C6113 EM-553-F9T C4054 transistor