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    C4D10120D Search Results

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    C4D10120D Price and Stock

    Wolfspeed C4D10120D

    DIODE ARR SIC 1200V 9A TO247-3
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    DigiKey C4D10120D Tube 951 1
    • 1 $9.41
    • 10 $6.454
    • 100 $4.7791
    • 1000 $4.2125
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    Mouser Electronics C4D10120D 1,284
    • 1 $8.69
    • 10 $4.78
    • 100 $4.78
    • 1000 $4.21
    • 10000 $4.21
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    Arrow Electronics C4D10120D 1,200 13 Weeks 600
    • 1 -
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    • 1000 $4.196
    • 10000 $4.195
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    Newark C4D10120D Bulk 5,106 1
    • 1 $7.13
    • 10 $6.54
    • 100 $6.03
    • 1000 $6.03
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    TME C4D10120D 17 1
    • 1 $7.56
    • 10 $6
    • 100 $5.6
    • 1000 $5.6
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    Richardson RFPD C4D10120D 285 1
    • 1 $5.8
    • 10 $5.8
    • 100 $5.5
    • 1000 $5.5
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    Chip1Stop C4D10120D Tube 320
    • 1 $7.45
    • 10 $5.93
    • 100 $4.39
    • 1000 $4.3
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    C4D10120D 285
    • 1 -
    • 10 $10.2
    • 100 $8.41
    • 1000 $8.37
    • 10000 $8.37
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    Analog Power ADC4D10120D

    DIODE SIL SIC 1200V 9A TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ADC4D10120D Tube 550 1
    • 1 $12.54
    • 10 $11.043
    • 100 $9.5506
    • 1000 $7.9389
    • 10000 $7.9389
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    Others C4D10120D

    Diode Schottky SiC 1.2KV 38A 3-Pin(3+Tab) TO-247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical C4D10120D 1,200 30
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.196
    • 10000 $4.195
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    C4D10120D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    C4D10120D Cree Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 1200V 9A TO247 Original PDF

    C4D10120D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c4d10120

    Abstract: C4D10120D
    Text: C4D10120D–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF = 10 A Qc =69 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching


    Original     		PDF C4D10120D O-247-3 C4D10120D C4D10120 c4d10120

    c4d10120

    Abstract: No abstract text available
    Text: C4D10120D–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF; TC<135˚C = 18 A Qc =69 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching


    Original     		PDF C4D10120D O-247-3 C4D10120D C4D10120 c4d10120

    C4D10120

    Abstract: No abstract text available
    Text: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 13 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching


    Original     		PDF C4D10120D O-247-3 O-247 C4D10120D C4D10120

    C4D10120

    Abstract: No abstract text available
    Text: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching


    Original     		PDF C4D10120D O-247-3 O-247 C4D10120D C4D10120

    Untitled

    Abstract: No abstract text available
    Text: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching


    Original     		PDF C4D10120D O-247-3 O-24planted C4D10120A

    C4D10120

    Abstract: No abstract text available
    Text: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching


    Original     		PDF C4D10120D O-247-3 O-24planted C4D10120A C4D10120

    cmf20120

    Abstract: CMF20120D mosfet 10a 800v 423F power Diode 800V 20A MOSFET 20a 800v Cree SiC MOSFET
    Text: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V ID MAX = 42 A N-Channel Enhancement Mode RDS(on) Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		PDF CMF20120D-Silicon O-247-3 CMF20120D CMF20120D cmf20120 mosfet 10a 800v 423F power Diode 800V 20A MOSFET 20a 800v Cree SiC MOSFET

    CMF20120D

    Abstract: cmf20120
    Text: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS 1200 V ID MAX 42 A R 80mΩ DS(on) N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		PDF CMF20120D-Silicon O-247-3 CMF20120D CMF20120D cmf20120

    C2M1000170

    Abstract: Diode 1S 2473
    Text: VDS 1700 V ID @ 25˚C 4.9 A C2M1000170D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 1.0 Ω N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		PDF C2M1000170D O-247-3 C2M1000170D C2M1000170 Diode 1S 2473

    c2m0080120

    Abstract: C2M0080120D 12v to 1000v inverters circuit diagrams 10v to 1000v inverters circuit diagrams
    Text: VDS 1200 V ID @ 25˚C 31.6 A C2M0080120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		PDF C2M0080120D O-247-3 C2M0080120D c2m0080120 12v to 1000v inverters circuit diagrams 10v to 1000v inverters circuit diagrams

    C4D05120

    Abstract: CMF10120 CSD01060E c4d02120e c4d02120 C3D02060 C4D02120A C3D02060A C2D20120 c3d0606
    Text: Power Product Line Z-RecTM Rectifiers DALL, Rev. G Datasheet: C3 VRRM V IF(AVG) (A) IF(AVG) (A) (Tc=150°C) (Tc=100°C) Zero-Recovery Rectifiers and VF(T VF(T TJ(Max) Max Typ Max (°C) Package Type Recommended for new designs? J=25°C) Typ J=175°C) CSD01060A


    Original     		PDF CSD01060A CSD01060E C3D02060A C3D02060E C3D02060F C3D03060A C3D03060E C3D03060F C3D04060A C3D04060E C4D05120 CMF10120 c4d02120e c4d02120 C3D02060 C4D02120A C2D20120 c3d0606

    C2M0160120D

    Abstract: No abstract text available
    Text: VDS 1200 V ID MAX @ 25˚C C2M0160120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS(on) 17.7 A 160 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		PDF C2M0160120D O-247-3 C2M0160applications C2M0160120D

    Untitled

    Abstract: No abstract text available
    Text: VDS 1200 V ID @ 25˚C 31.6 A C2M0080120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		PDF C2M0080120D O-247-3 C2M0080120D