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    TDK Corporation C4532X5R1H685M250KA

    CAP CER 6.8UF 50V X5R 1812
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    C4532X5R1H685M Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    C4532X5R1H685M250KA TDK Ceramic Capacitors, Capacitors, CAP CER 6.8UF 50V 20% X5R 1812 Original PDF

    C4532X5R1H685M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C1005JB

    Abstract: C1608C0G1H272J C5750X5R1C476M230KA c2012jb1h C2012X5R1H104K C1005X5R1E154K C3216JB0J476 C1608X7R1H154K C2012CH1H C1005JB1A105M
    Text: Multilayer Ceramic Chip Capacitors General use C series Type: C0402[EIA CC01005] C0603[EIA CC0201] C1005[EIA CC0402] C1608[EIA CC0603] C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: August 2012 • All specifications are subject to change without notice.


    Original     		PDF C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C1005JB C1608C0G1H272J C5750X5R1C476M230KA c2012jb1h C2012X5R1H104K C1005X5R1E154K C3216JB0J476 C1608X7R1H154K C2012CH1H C1005JB1A105M

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade General Up to 50V Type: C0402 [EIA CC01005] C0603 [EIA CC0201] C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220]


    Original     		PDF C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805]

    C2012JF1C475Z

    Abstract: C4532JF1H106Z C5750JF1E476Z C2012JF1A106Z C3216JF1H225Z c1608jf1a225z c3225 transistor C1608JF1C105Z CC0603 x5r C1608CH1H100D
    Text: 1/15 General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and


    Original     		PDF C5750X5R1H106K C5750X5R1H106M C5750X5R1E106K C5750X5R1E106M C5750X5R1E156M C5750X5R1E226M C5750X5R1C336M C5750X5R1C476M C2012JF1C475Z C4532JF1H106Z C5750JF1E476Z C2012JF1A106Z C3216JF1H225Z c1608jf1a225z c3225 transistor C1608JF1C105Z CC0603 x5r C1608CH1H100D

    C1608CH1H010C080AA

    Abstract: C1608X7R1H103K080AA 1608 B 100NF C2012X5R1H105K C1005X5R1A225K050BC c2012x5r1v C3216JB1H106K C1005C0G1H100C
    Text: Multilayer Ceramic Chip Capacitors General use C series Type: C0402[EIA CC01005] C0603[EIA CC0201] C1005[EIA CC0402] C1608[EIA CC0603] C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: August 2011 • All specifications are subject to change without notice.


    Original     		PDF C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C1608CH1H010C080AA C1608X7R1H103K080AA 1608 B 100NF C2012X5R1H105K C1005X5R1A225K050BC c2012x5r1v C3216JB1H106K C1005C0G1H100C

    MRF5S21045N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045N

    dubilier CLP

    Abstract: B340A LTC3770 LTC3770EG LTC3770EUH Si4884 33a sot23 diode 12v 30A regulator
    Text: LTC3770 Fast No RSENSETM Step-Down Synchronous Controller with Margining, Tracking and PLL DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n n Wide VIN Range: 4V to 32V ±0.67% 0.6V Reference Voltage Output Voltage Tracking Capability Programmable Margining


    Original     		PDF LTC3770 200kHz 100ns LTC3713 LTC3731 600kHz; LTC3778 3770fc dubilier CLP B340A LTC3770 LTC3770EG LTC3770EUH Si4884 33a sot23 diode 12v 30A regulator

    C5750JF1E476Z

    Abstract: No abstract text available
    Text: 1/15 General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and


    Original     		PDF C5750X5R1H106K C5750X5R1H106M C5750X5R1E106K C5750X5R1E106M C5750X5R1E156M C5750X5R1E226M C5750X5R1C336M C5750X5R1C476M C5750JF1E476Z

    CRCW08054701FKEA

    Abstract: MWE6IC9100N ZO 607 MA MWE6IC9100GNR1 MWE6IC9100NBR1 MWE6IC9100NR1 A114 A115 AN1977 AN1987
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 3, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage


    Original     		PDF MWE6IC9100N MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 CRCW08054701FKEA ZO 607 MA MWE6IC9100NBR1 A114 A115 AN1977 AN1987

    J771

    Abstract: gps 144 1812y224kat AN1955 JESD22-A114 MRF5S21045NBR1 MRF5S21045NR1 TLX8-0300 a113 bolt MRF5S21045N
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 4.1, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 J771 gps 144 1812y224kat AN1955 JESD22-A114 MRF5S21045NBR1 TLX8-0300 a113 bolt MRF5S21045N

    C1608JB1H472K

    Abstract: C4532JF1C476 C2012JF1H105Z C3225JB0J107M C1608JF1H104Z C0603CH1H010C C0603CH1H0R5C C0603CH1HR75C C4532JF C1005CH1H120J
    Text: 1/15 General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and


    Original     		PDF C5750X5R1H106K C5750X5R1H106M C5750X5R1E106K C5750X5R1E106M C5750X5R1E156M C5750X5R1E226M C5750X5R1C336M C5750X5R1C476M C1608JB1H472K C4532JF1C476 C2012JF1H105Z C3225JB0J107M C1608JF1H104Z C0603CH1H010C C0603CH1H0R5C C0603CH1HR75C C4532JF C1005CH1H120J

    C1005X5R1V154K050BC

    Abstract: C3216X7R1H335K160AC C3216X7R1H475K C3225X7R1H106 C4532X7R1E106M250KA C0402CH1C390K020BC C1608X7S1A475K C1608X5R1A226M C4532X7R1H685M250 C1608C0G1H102K
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade General Up to 50V Type: C0402 [EIA CC01005] C0603 [EIA CC0201] C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220]


    Original     		PDF C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C1005X5R1V154K050BC C3216X7R1H335K160AC C3216X7R1H475K C3225X7R1H106 C4532X7R1E106M250KA C0402CH1C390K020BC C1608X7S1A475K C1608X5R1A226M C4532X7R1H685M250 C1608C0G1H102K

    MRF5S21045N

    Abstract: No abstract text available
    Text: Document Number: MRF5S21045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S21045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF5S21045 MRF5S21045NR1/NBR1. MRF5S21045MR1 MRF5S21045MBR1 MRF5S21045MR1 MRF5S21045N

    J1220

    Abstract: 100WpEp MWE6IC9100N
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N-2 Rev. 5, 12/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage


    Original     		PDF MWE6IC9100N--2 MWE6IC9100N MWE6IC9100GNR1 MWE6IC9100NBR1 J1220 100WpEp

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 3, 12/2008 ARCHIVE INFORMATION The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base


    Original     		PDF MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF5S21045NBR1 MRF5S21045NR1 MRF5S21045N
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 4, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 A113 A114 A115 AN1955 C101 JESD22 MRF5S21045NBR1 MRF5S21045N

    B340A

    Abstract: LTC3770 LTC3770EG LTC3770EUH Si4884
    Text: LTC3770 Fast No RSENSETM Step-Down Synchronous Controller with Margining, Tracking and PLL U FEATURES DESCRIPTIO • The LTC 3770 is a synchronous step-down switching regulator controller with output voltage up/down tracking capability and voltage margining. Its advanced functions


    Original     		PDF LTC3770 200kHz 100ns LTC3713 LTC3731 600kHz; LTC3778 3770f B340A LTC3770 LTC3770EG LTC3770EUH Si4884

    C5750JF1E476Z

    Abstract: C4532JF1H106Z C3216JF1C106Z C5750JB1E226M C1608JF1C105Z C2012JB1E684K C4532JF C3216JB0J476 C2012JF1A106Z C0603CH1H0R5C
    Text: w w w . D a t a S h e e t 4 U . c o 1/15 m General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and


    Original     		PDF C5750X5R1H106K C5750X5R1H106M C5750X5R1E106K C5750X5R1E106M C5750X5R1E156M C5750X5R1E226M C5750X5R1C336M C5750X5R1C476M C5750JF1E476Z C4532JF1H106Z C3216JF1C106Z C5750JB1E226M C1608JF1C105Z C2012JB1E684K C4532JF C3216JB0J476 C2012JF1A106Z C0603CH1H0R5C

    C1608X5R1A226M080AC

    Abstract: C1608X7R1A225K080
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade General Up to 50V Type: C0402 [EIA CC01005] C0603 [EIA CC0201] C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220]


    Original     		PDF C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C1608X5R1A226M080AC C1608X7R1A225K080

    J107-2

    Abstract: 100A0R5BW 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM A113 A114 A115 AN1955 AN1987 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MHV5IC1810N Rev. 0, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage


    Original     		PDF MHV5IC1810N MHV5IC1810N MHV5IC1810NR2 J107-2 100A0R5BW 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM A113 A114 A115 AN1955 AN1987 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5P21045N Rev. 0, 4/2007 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21045NR1 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Dual path topology suitable for Doherty, quadrature, single - ended and


    Original     		PDF MRF5P21045N MRF5P21045NR1

    C5750Y5V1H226Z

    Abstract: C5750Y5V1E476Z
    Text: 1/29 REMINDERS Please read this before using the product. SAFETY REMINDERS REMINDERS 1. If you intend to use a product listed in this catalog for a purpose that may cause loss of life or other damage, you must contact our company’s sales window. 2. We may modify products or discontinue production of a product listed in this catalog without prior notification.


    Original     		PDF C5750JF1H226Z C5750Y5V1H226Z C5750JF1E476Z C5750Y5V1E476Z C5750JF1C107Z C5750Y5V1C107Z C5750Y5V1H226Z C5750Y5V1E476Z

    ATC100B331

    Abstract: MS 1117 ADC MHVIC910HR2 A114 A115 AN1977 AN1987 JESD22 MWE6IC9100GNR1 MWE6IC9100N
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 2, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage


    Original     		PDF MWE6IC9100N MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 ATC100B331 MS 1117 ADC MHVIC910HR2 A114 A115 AN1977 AN1987 JESD22

    C2012JB1A226M

    Abstract: C2012JB1C106K C2012X6S0J226K C2012X5R1C226K C2012X6S0J226M C3225X7R1H335K C1608X5R1C475K C2012X5R1C226M C5750Y5V1C107Z C1608X5R1A106M
    Text: 持蚊薮頭盲管頭塀窮否匂 匯違喘 C 狼双 Type: C0603[EIA CC0201] C1005[EIA CC0402] C1608[EIA CC0603] C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: April 2010 ●芝墮坪否，壓短嗤嚠御議秤趨和嗤辛嬬個序才延厚，萩嚠參疎盾。


    Original     		PDF C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C3216 CC1206] C2012JB1A226M C2012JB1C106K C2012X6S0J226K C2012X5R1C226K C2012X6S0J226M C3225X7R1H335K C1608X5R1C475K C2012X5R1C226M C5750Y5V1C107Z C1608X5R1A106M

    C4532

    Abstract: C4532CH1H104J CC1812 C4532JB1H225K
    Text: SMD, General Use C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low residual inductance assures superior frequency


    OCR Scan     		PDF 15fJF] C4532X5R1C156M C4532X5R1C226M C4532X5R1C336M C4532X5R1A336M C4532X5R1A476M C4532X5R0J686M C4532X5RCU107M C4532 C4532CH1H104J CC1812 C4532JB1H225K