MIXER SCHEMATIC DIAGRAM
Abstract: c4 ic rf amplifier
Text: HPMX-2006 Demonstration Circuit Board rev AP060596A Applications Bulletin Introduction The circuit board described is designed for use with HPMX-2006 up converter / amplifier MMIC. The board can be set up to test the mixer alone or to test the mixer/amp combination. It allows testing the
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HPMX-2006
AP060596A
MR102993A
MIXER SCHEMATIC DIAGRAM
c4 ic rf amplifier
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11Z4
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics
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MRF6404
DCS1800
PCS1900/Cellular
MRF6404
11Z4
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variable resistor 2.2k
Abstract: fr3c2 transistor preamp with bass treble circuit diagram 40hz bass filter CIRCUIT diagram 2SA1362 TA2123AF DRV_B curent sensor
Text: TA2123AF TOSHIBA Bipolar Integrated Circuit Silicon Monolithic TA2123AF 1.5V Stereo Headphone Amplifier The TA2123AF is the system amplifier IC which is developed for playback stereo headphone equipments. It is built in dual auto−reverse preamplifiers, dual power amplifiers with bass /
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TA2123AF
TA2123AF
variable resistor 2.2k
fr3c2
transistor preamp with bass treble circuit diagram
40hz bass filter CIRCUIT diagram
2SA1362
DRV_B
curent sensor
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PWC PW-2
Abstract: 2SA1362 TA2123AFG transistor preamp with bass treble circuit diagram
Text: TA2123AFG TOSHIBA Bipolar Integrated Circuit Silicon Monolithic TA2123AFG 1.5V Stereo Headphone Amplifier The TA2123AFG is the system amplifier IC which is developed for playback stereo headphone equipments. It is built in dual auto−reverse preamplifiers, dual power amplifiers with bass /
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TA2123AFG
TA2123AFG
PWC PW-2
2SA1362
transistor preamp with bass treble circuit diagram
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Untitled
Abstract: No abstract text available
Text: ADE-207-112 Z HA11575F Satellite Broadcast Tuner FM Demodulator IC Rev. 0 Feb. 1994 Functions • IF amplifier (with built-in IF AGC) • PLL FM detection • AGC detection • First AGC output • AFC (supports keyed AFC) • Digital AFC output • Video amplifier
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ADE-207-112
HA11575F
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358E-06
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF858S NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 – 960 MHz.
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MRF858S
MRF858S
358E-06
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TRANSISTOR A331
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to
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MRF6404/D
MRF6404
DCS1800
PCS1900/Cellular
MRF6404
MRF6404/D
TRANSISTOR A331
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TRANSISTOR A331
Abstract: transistor 31C 37281 ADC 50 Ghz MRF6404K A153 A331 DCS1800 MRF6404 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 MRF6404K The RF Line NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to
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MRF6404/D
MRF6404
MRF6404K
MRF6404
DCS1800
PCS1900/Cellular
MRF6404/D*
TRANSISTOR A331
transistor 31C
37281
ADC 50 Ghz
MRF6404K
A153
A331
2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
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capacitor 104 Z5
Abstract: resistor A331 TRANSISTOR A331 A153 A331 DCS1800 MRF6404 motorola 572 transistor 150 watts power amplifier layout ATC 100A
Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to
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MRF6404/D
MRF6404
MRF6404
DCS1800
PCS1900/Cellular
capacitor 104 Z5
resistor A331
TRANSISTOR A331
A153
A331
motorola 572 transistor
150 watts power amplifier layout
ATC 100A
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37281
Abstract: TRANSISTOR A331 transistor 31C resistor A331 A153 A331 DCS1800 MRF6404
Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics
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MRF6404/D
MRF6404
MRF6404
DCS1800
PCS1900/Cellular
37281
TRANSISTOR A331
transistor 31C
resistor A331
A153
A331
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics
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MRF6404/D
MRF6404
MRF6404
DCS1800
PCS1900/Cellular
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TRANSISTOR A331
Abstract: 395C-01
Text: MOTOROLA MRF6404 NPN Silicon RF Power Transistor LIFETIME BUY The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics
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MRF6404/D
MRF6404
DCS1800
PCS1900/Cellular
TRANSISTOR A331
395C-01
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S1M8674
Abstract: amplifier SAW c4 ic rf amplifier DRV19
Text: TX RF FRONTS-ENDS IC S1M8674 INTRODUCTION 20-eTSSOP-BD44 S1M8674 is a fully integrated RF transmit IC for CDMA handsets. It includes an upconverter, a two-stage driver amplifier, and an LO buffer in 20TSSOP/24QFN with exposed paddle package. The driver amplifier
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S1M8674
20-eTSSOP-BD44
S1M8674
20TSSOP/24QFN
dBc/30kHz
10dBm
120pF
amplifier SAW
c4 ic rf amplifier
DRV19
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ic 45800
Abstract: PA2460 PA2460 HIMARK R3R40 PA246 HiMARK
Text: PA2460 Power Amplifier IC Advance Information HiMARK Technology, Inc. reserves the right to change the product described in this datasheet. All information contained in this datasheet is subject to change without prior notice. HiMARK Technology, Inc. assumes no responsibility for the
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PA2460
400MHz
480MHz
33dBm
ic 45800
PA2460 HIMARK
R3R40
PA246
HiMARK
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transistor c5
Abstract: transistor c3-12 2N3866 c4 ic rf amplifier high frequency transistor
Text: DATA SHEET 2N3866 NPN SILICON HIGH FREQUENCY TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3866 is a Silicon NPN RF Transistor, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications.
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2N3866
transistor c5
transistor c3-12
c4 ic rf amplifier
high frequency transistor
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Untitled
Abstract: No abstract text available
Text: SGB-4333 Z SGB-4333(Z) DC to 3GHz Active Bias Gain Block DC to 3GHZ ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description Features RFMD’s SGB-4333 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides
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SGB-4333
16-Pin
SGB-4333
SGB4333â
SGB43Zâ
SGB-4333Z
EDS-103087
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Untitled
Abstract: No abstract text available
Text: SGB-2233 Z DC to 4.5GHz Active Bias Gain Block SGB-2233(Z) Preliminary DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description Features RFMD’s SGB-2233 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides
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SGB-2233
16-Pin
SGB-2233
SGB2233â
SGB22Zâ
SGB-2233Z
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SGB-2233Z
Abstract: SGB-2233
Text: SGB-2233 Z DC to 4.5GHz Active Bias Gain Block SGB-2233(Z) Preliminary DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description Features RFMD’s SGB-2233 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides
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SGB-2233
16-Pin
SGB-2233
SGB2233"
SGB22Z"
SGB-2233Z
SGB-2233Z
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Untitled
Abstract: No abstract text available
Text: SGB-2433 Z DC to 4GHz Active Bias Gain Block SGB-2433(Z) Preliminary DC to 4GHZ ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description Features RFMD’s SGB-2433 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides
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SGB-2433
16-Pin
SGB2433â
SGB24Zâ
SGB-2433Z
SGB-2433
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Untitled
Abstract: No abstract text available
Text: SGB2433Z SGB2433Z DC to 4GHZ ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free Z Part Number Package: 3x3 QFN, 16-Pin Product Description Features RFMD’s SGB2433Zis a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides
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SGB2433Z
16-Pin
SGB2433Zis
SGB2433Z
31mil
500MHz
850MHz
1950MHz
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SGB-2433
Abstract: SGB-24Z
Text: SGB-2433 Z DC to 4GHz Active Bias Gain Block SGB-2433(Z) Preliminary DC to 4GHZ ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description Features RFMD’s SGB-2433 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides
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SGB-2433
16-Pin
SGB2433"
SGB24Z"
SGB-2433Z
SGB-2433
SGB-24Z
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet Product Description Sirenza Microdevices’ SGB-6533 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta
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SGB-6533
EDS-103099
SGB-6533"
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Untitled
Abstract: No abstract text available
Text: RFH RF2310 MICRO DEVICES WIDEBAND GENERAL PURPOSE AM PLIFIER T y p ic a l A p p lic a tio n s • General Purpose High Bandwidth Gain • Broadband Test Equipment • Final PA for Medium Power Applications Blocks • IF or RF Buffer Amplifiers • Driver Stage for Power Amplifiers
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RF2310
RF2310
RF2310PCBA
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t918
Abstract: 10000 uf ovam 40
Text: E èÎËQGÇS AWT918 TX POWER MMIC Your GaAs IC Source Advanced Product Information Rev 0 CELLULAR/PCS Dual Band GaAs Power Amplifier IC D ES C R IP TIO N : T he A W T918 is a m onolithic GaAs Pow er Am plifier. It can be used in the follow ing dual band handset
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AWT918
900/D
900/G
AWT918
t918
10000 uf
ovam 40
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