C3H marking
Abstract: UPC3224TB HS350 marking c1h UPC2712TB c3k cel
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3224TB 5 V, SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3224TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.
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UPC3224TB
PC3224TB
PC3224TB-E3
C3H marking
UPC3224TB
HS350
marking c1h
UPC2712TB
c3k cel
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PC3224TB
Abstract: 2F P marking PC321 UPC3227TB PC2712T PC3227TB-E3-A
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3227TB 5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER DESCRIPTION The PC3227TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
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UPC3227TB
PC3227TB
PC3224TB
2F P marking
PC321
UPC3227TB
PC2712T
PC3227TB-E3-A
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UPC3227TB
Abstract: marking C1G
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3227TB 5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3227TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
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UPC3227TB
PC3227TB
UPC3227TB
marking C1G
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balancer battery
Abstract: No abstract text available
Text: 1 REVISION HISTORY ECO REV - 2 20 4 5 6 7 8 1 1 4 1210 6.3V 1210 6.3V 1210 6.3V C3 2 BATTERY CELL VOLTAGES 2.5V - 4.5V 2.5A 1 V- C4G 2.2nF 5.1 V- 2 OPT C5S 2.2uF 18 1206 470pF 100V 0603 1210 100V 1210 100V 5 6 7 8 1 3 2 1 RS5B 0.016 I5S 20 4 2 20 1206 C4E
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470pF
LTC3300
DFLS260
DFLS1100
LTC3300ILXE-1
LTC6803IG-2
balancer battery
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transistor smd d9d
Abstract: smd transistor r5c transistor SMD a10a 4E smd diode smd transistor d9d DC1652A
Text: DEMO MANUAL DC2064A LTC3300-1/LTC6803-2 Bidirectional Cell Balancer DESCRIPTION Demonstration Circuit DC2064A is a bidirectional cell balancer using two LTC 3300-1 ICs to achieve active cell balancing of up to 12 Li-Ion batteries. The board uses the LTC6803-2 multi-cell addressable battery stack monitor to
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DC2064A
LTC3300-1/LTC6803-2
DC2064A
LTC6803-2
LTC3300-1
DC2064A.
LTC6803â
DC590B
transistor smd d9d
smd transistor r5c
transistor SMD a10a
4E smd diode
smd transistor d9d
DC1652A
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M2KA
Abstract: HEPC XS2F-D523-D80-A OMR H C3JW ly2f t2 YAZAKI Terminal7116-4022 WL01CA 54151A
Text: We surveyed SVHC 161 substances. REACH/SVHC Information Product description SMCI XB. SMC TE SENSOR YA-JA01 PB FREE SENSOR YA-HC05 PBFREE SP SMC DI SENSOR YA-HC04 SMC DI SENSOR YA-JB01 SENSOR YA-HC09(SP) SENSOR YA-HA01PB-FREE(SP) SENSOR YA-HC09 SMC YA-JA02 A-TE SENSOR
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YA-JA01
YA-HC05
YA-HC04
YA-JB01
YA-HC09
YA-HA01PB-FREE
YA-HC09
YA-JA02
YA-HC18
YA-JB05
M2KA
HEPC
XS2F-D523-D80-A
OMR H
C3JW
ly2f t2
YAZAKI Terminal7116-4022
WL01CA
54151A
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7 segmen
Abstract: D101R
Text: QS70261A, QS7026A PRELIMINARY High-Speed CMOS 16K x 16 Asynchronous Dual-Port RAM Q FEATURES QS70261A QS7026A DESCRIPTION High-speed asynchronous dual-port architecture Access times from either port, 17/20/25/35/55 ns Industry standard pin-out Independent port access and control
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OCR Scan
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QS70261A,
QS7026A
QS70261A
QS7026A
100-pin
84-pin
QS72026A
QS70261A/26A
7 segmen
D101R
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ALC100
Abstract: ST CD C226 VM036 BK1606 COD-51 LS-120 WD62 L420 eef 1208 PA6 GF 10 MD10
Text: D i a g r a m s M a in b o a r d G T LH W 3 b TLH A 6 T LH W S G TL H i« G T L H tf? GT L HA#6 \ U . tq : 02: I4 n : « ; K1 . ji ; s . m : G r. h i; » : pi . H . r ; E l, 0« . IB . 0) E2, IS . w . f t , ci 83 . A3 02, 2 1; Ai AS 84, C5 , g t lh w s
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0UF/16V
ALC100
ST CD C226
VM036
BK1606
COD-51
LS-120
WD62
L420
eef 1208
PA6 GF 10 MD10
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