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    C3H 6-PIN SOIC Search Results

    C3H 6-PIN SOIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet

    C3H 6-PIN SOIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAX6662

    Abstract: MAX6662MSA
    Text: 19-2121; Rev 0; 7/01 KIT ATION EVALU E L B A AVAIL 12-Bit + Sign Temperature Sensor with SPI-Compatible Serial Interface The MAX6662 is a 12-bit + sign temperature sensor combined with a programmable overtemperature alarm and a 3-wire SPI -compatible serial interface in a single package. It converts its die temperature into digital


    Original     		PDF 12-Bit MAX6662 13-bit MS012 MAX6662 MAX6662MSA

    Untitled

    Abstract: No abstract text available
    Text: 19-2121; Rev 0; 7/01 KIT ATION EVALU E L B A AVAIL 12-Bit + Sign Temperature Sensor with SPI-Compatible Serial Interface The MAX6662 is a 12-bit + sign temperature sensor combined with a programmable overtemperature alarm and a 3-wire SPI -compatible serial interface in a single package. It converts its die temperature into digital


    Original     		PDF 12-Bit MAX6662 13-bit MS012 MAX6662

    Untitled

    Abstract: No abstract text available
    Text: 19-2121; Rev 0; 7/01 12-Bit + Sign Temperature Sensor with SPI-Compatible Serial Interface Features ♦ 12-Bit + Sign, 0.0625°C Resolution ♦ Accuracy ±1°C max +30°C to +50°C ±1.6°C max (0°C to +70°C) ±2.5°C max (-20°C to +85°C) ±2.5 typ (+150°C)


    Original     		PDF 12-Bit MAX6662 13-bit MAX6662

    MAX6662

    Abstract: MAX6662MSA setting alert mode
    Text: 19-2121; Rev 0; 7/01 12-Bit + Sign Temperature Sensor with SPI-Compatible Serial Interface Features ♦ 12-Bit + Sign, 0.0625°C Resolution ♦ Accuracy ±1°C max +30°C to +50°C ±1.6°C max (0°C to +70°C) ±2.5°C max (-20°C to +85°C) ±2.5 typ (+150°C)


    Original     		PDF 12-Bit MAX6662MSA MAX6662 MAX6662 MAX6662MSA setting alert mode

    sck 104 capacitor

    Abstract: opcodes detailed list for EEPROM AN61546
    Text: Designing with Serial Peripheral Interface SPI nvSRAM AN64574 Author: Shivendra Singh Associated Project: Yes Associated Part Family: CY14C101PA/QxA, CY14B101PA/QxA, CY14E101PA/QxA Software Version: None Associated Application Notes: None Application Note Abstract


    Original     		PDF AN64574 CY14C101PA/QxA, CY14B101PA/QxA, CY14E101PA/QxA sck 104 capacitor opcodes detailed list for EEPROM AN61546

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 64K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V05 512Kb FM25VN05) FM25V05, 340282A, 25V05 A6340282A RIC0824 25VN05

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 128K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V10 FM25VN10) FM25V10, 340282A, 25V10 A6340282A RIC0824 25VN10

    RG5V02

    Abstract: RG5VN02
    Text: FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V02 256Kb FM25V02 256-kilobit FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG RG5V02 RG5VN02

    RG5V02

    Abstract: fm25v02
    Text: Pre-Production FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V02 256Kb FM25VN02) FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG FM25V02-DGTR RG5V02 fm25v02

    FM25V02

    Abstract: No abstract text available
    Text: FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V02 256Kb FM25VN02) FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG FM25V02-DGTR FM25V02

    FM25V02

    Abstract: FM25VN02 FM25V02-G
    Text: Preliminary FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V02 256Kb FM25V02 256-kilobit FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG FM25VN02 FM25V02-G

    fm25v05-g

    Abstract: FM25V05 fm25v05g
    Text: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V05 512Kb FM25VN05) FM25V05-G FM25VN05-G FM25V05-GTR FM25VN05-GTR FM25V05 fm25v05g

    FM25V10

    Abstract: FM25V10-G FM25VN10 25VN10
    Text: Preliminary FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 128K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V10 FM25VN10) 25VN10 A6340282A RIC0824 FM25V10 FM25V10-G FM25VN10-G FM25V10-GTR FM25VN10-GTR FM25V10-G FM25VN10 25VN10

    FM25V05

    Abstract: FM25V05-G
    Text: Preliminary FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 64K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V05 512Kb FM25VN05) 25VN05 A6340282A RIC0824 FM25V05 FM25V05-G FM25VN05-G FM25V05-G

    FM25V05-G

    Abstract: FM25V05 AEC-Q100-002 FM25V05-Gtr
    Text: Pre-Production FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V05 512Kb FM25VN05) FM25V05-G FM25VN05-G FM25V05-GTR FM25VN05-GTR FM25V05-G FM25V05 AEC-Q100-002 FM25V05-Gtr

    FM25V10

    Abstract: fm25v10-g FM25V fm25v10g fm25vn10-g
    Text: FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V10 FM25VN10) TemperaFM25V10 FM25V10-G FM25VN10-G FM25V10-GTR FM25VN10-GTR FM25V10 FM25V fm25v10g

    Untitled

    Abstract: No abstract text available
    Text: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V05 512Kb FM25VN05) FM25V05-G FM25VN05-G FM25V05-GTR FM25VN05-GTR

    Untitled

    Abstract: No abstract text available
    Text: FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V10 FM25VN10) T9/2008 FM25V10-G FM25VN10-G FM25V10-GTR FM25VN10-GTR

    FM25VN10-G

    Abstract: FM25V10 FM25V10-G FM25VN10 FM25V10-GTR FM25V10gtr AEC-Q100-002 fm25v
    Text: Pre-Production FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V10 FM25VN10) FM25V10-G FM25VN10-G FM25V10-GTR FM25VN10-GTR FM25VN10-G FM25V10 FM25V10-G FM25VN10 FM25V10-GTR FM25V10gtr AEC-Q100-002 fm25v

    FM25V01

    Abstract: FM25V01-G FM25VN01 FM25V01-GTR marking 0BH AEC-Q100-002 FM25VN01-G
    Text: Preliminary FM25V01 128Kb Serial 3V F-RAM Memory Features 128K bit Ferroelectric Nonvolatile RAM • Organized as 16,384 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V01 128Kb FM25VN01) FM25V01, FM25V01-G A9646447 RIC1021 FM25VN01-G FM25V01 FM25V01-G FM25VN01 FM25V01-GTR marking 0BH AEC-Q100-002 FM25VN01-G

    FM25V02-G

    Abstract: FM25V02-GTR FM25V02 RG5V02 FM25VN02 AEC-Q100-002 C3H marking fm25v02gtr
    Text: Pre-Production FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V02 256Kb FM25V02 256-kilobit FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG FM25V02-G FM25V02-GTR RG5V02 FM25VN02 AEC-Q100-002 C3H marking fm25v02gtr

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V05 512Kb FM25VN05) Configuration16 FM25V05 FM25V05-G FM25VN05-G FM25V05-GTR FM25VN05-GTR

    Untitled

    Abstract: No abstract text available
    Text: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V05 512Kb FM25VN05) Industria5/25/2010 FM25V05-G FM25VN05-G FM25V05-GTR FM25VN05-GTR

    FM25V10-G

    Abstract: fm25v10
    Text: Pre-Production FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V10 FM25VN10) FM25V10 FM25V10-G FM25VN10-G FM25V10-GTR FM25VN10-GTR