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    C34 MARKING Search Results

    C34 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    C34 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C38 diode

    Abstract: Z15 marking diode z15 Diode glass C36 marking diode marking c34 c38 transistor
    Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF 470on. AN215A, MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 C38 diode Z15 marking diode z15 Diode glass C36 marking diode marking c34 c38 transistor

    z15 Diode glass

    Abstract: Z14 j b5c15 C2233 AN721 diode zener c29 A113 J042 AN215A AN3263
    Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 9, 6/2008 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570NT1 z15 Diode glass Z14 j b5c15 C2233 AN721 diode zener c29 A113 J042 AN215A AN3263

    marking code C37

    Abstract: transistor c37 marking code C74 marking code C34 complementary npn-pnp NPN PNP sot-563 dual npn 500ma vce max 100 ic max 100MA NPN pnp and npn amplifier marking code D
    Text: Central CMLT3410 NPN CMLT7410 PNP CMLT3474 NPN/PNP SURFACE MOUNT PICOmini DUAL LOW VCE SAT SILICON TRANSISTORS SOT-563 CASE MAXIMUM RATINGS: (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak)


    Original     		PDF CMLT3410 CMLT7410 CMLT3474 OT-563 CMLT3410 CMLT7410 CMLT3474 100MHz CMLT3410) CMLT7410) marking code C37 transistor c37 marking code C74 marking code C34 complementary npn-pnp NPN PNP sot-563 dual npn 500ma vce max 100 ic max 100MA NPN pnp and npn amplifier marking code D

    Untitled

    Abstract: No abstract text available
    Text: CMLT3410 NPN CMLT7410 PNP CMLT3474 NPN/PNP SURFACE MOUNT DUAL LOW VCE SAT SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR dual devices are low VCE(SAT) silicon transistors in a PICOmini surface mount package designed for small signal


    Original     		PDF CMLT3410 CMLT7410 CMLT3474 CMLT3410: CMLT7410: CMLT3474: OT-563 100mA 500mA 100MHz

    transistor c37

    Abstract: marking code C37 marking code C34 marking code C74 C34 MARKING pin ic marking code 60
    Text: CMLT3410 NPN CMLT7410 PNP CMLT3474 NPN/PNP SURFACE MOUNT DUAL LOW VCE SAT SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR dual devices are low VCE(SAT) silicon transistors in a PICOmini surface mount package designed for small signal


    Original     		PDF CMLT3410 CMLT7410 CMLT3474 CMLT3410: CMLT7410: CMLT3474: OT-563 100mA 500mA 100MHz transistor c37 marking code C37 marking code C34 marking code C74 C34 MARKING pin ic marking code 60

    diode zener c26

    Abstract: A113 AN211A AN215A AN721 MRF1570FNT1 MRF1570N MRF1570NT1 MRF1570T1 mrf1570
    Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 8, 9/2006 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570NT1 diode zener c26 A113 AN211A AN215A AN721 MRF1570FNT1 MRF1570N MRF1570T1 mrf1570

    marking code C37

    Abstract: transistor c37 dual npn 500ma CMLT3410 CMLT3474 CMLT7410 marking code C34
    Text: Central CMLT3410 CMLT3410G* NPN CMLT7410 CMLT7410G* PNP CMLT3474 CMLT3474G* NPN/PNP SURFACE MOUNT PICOmini DUAL LOW VCE SAT SILICON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: These dual devices are low VCE(SAT) silicon transistors in a PICOmini™ surface mount package


    Original     		PDF CMLT3410 CMLT3410G* CMLT7410 CMLT7410G* CMLT3474 CMLT3474G* OT-563 CMLT3410: CMLT7410: CMLT3474: marking code C37 transistor c37 dual npn 500ma marking code C34

    Untitled

    Abstract: No abstract text available
    Text: CMLT3410 NPN CMLT7410 PNP CMLT3474 NPN/PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON DUAL, LOW VCE SAT TRANSISTORS DESCRIPTION: These CENTRAL SEMICONDUCTOR dual devices are low VCE(SAT) silicon transistors in an SOT-563 surface mount package designed for small signal


    Original     		PDF CMLT3410 CMLT7410 CMLT3474 OT-563 CMLT3410: CMLT7410: CMLT3474: OT-563 100mA 500mA

    J042

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF1570T1 Rev. 5, 3/2005 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570T1 MRF1570NT1 MRF1570FNT1 MRF1570FT1 J042

    zener diode marking c24

    Abstract: transistor c36 j063
    Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 7, 5/2006 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570N zener diode marking c24 transistor c36 j063

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF1570T1 Rev. 6, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF1570NT1/FNT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF1570T1 MRF1570NT1/FNT1. MRF1570FT1 MRF1570T1

    150 watts power amplifier layout

    Abstract: 3.40 pf capacitor marking Z4 MOTOROLA 934 zener diode marking 4x A113 AN211A AN215A AN721 MRF1570FT1
    Text: Freescale Semiconductor Technical Data Document Number: MRF1570T1 Rev. 6, 5/2006 Replaced by MRF1570NT1/FNT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF1570T1 MRF1570NT1/FNT1. MRF1570FT1 MRF1570T1 150 watts power amplifier layout 3.40 pf capacitor marking Z4 MOTOROLA 934 zener diode marking 4x A113 AN211A AN215A AN721 MRF1570FT1

    transistor c37

    Abstract: marking code C37 CMLT3410 CMLT3474 CMLT7410 marking code C74 v30010
    Text: CMLT3410 NPN CMLT7410 PNP CMLT3474 NPN/PNP SURFACE MOUNT DUAL LOW VCE SAT SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR dual devices are low VCE(SAT) silicon transistors in a PICOmini surface mount package designed for small signal


    Original     		PDF CMLT3410 CMLT7410 CMLT3474 CMLT3410: CMLT7410: CMLT3474: OT-563 100MHz CMLT3410) CMLT7410) transistor c37 marking code C37 marking code C74 v30010

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF1570N Rev. 10, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570NT1

    PTFA043002

    Abstract: PTFA043002E SCHEMATIC DIAGRAM 3.3kv type 103 capacitor, 2kv RF, 1300 pf marking us capacitor pf l1 BCP56 LM7805 300WPEP P33K TRANSISTOR 023 3010
    Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The


    Original     		PDF PTFA043002E PTFA043002 300-watt, H-30275-4 PTFA043002E SCHEMATIC DIAGRAM 3.3kv type 103 capacitor, 2kv RF, 1300 pf marking us capacitor pf l1 BCP56 LM7805 300WPEP P33K TRANSISTOR 023 3010

    1794-VHSC

    Abstract: 1794-PS13 Allen-Bradley 1794-irt8 manual Allen-Bradley 1794-irt8 1794-IRT8 specification 1794-TB3G WIRING DIAGRAM 1794-IRT8 1794-IE8 Allen-Bradley 1794-of4i manual Allen-Bradley 1794-ie8 manual
    Text: Technical Data FLEX I/O and FLEX Integra 1794 Series and 1793 Series Flexible, Inexpensive, / ; ,270 DQG )/(; ,QWHJUD70 DUH IOH[LEOH ORZFRVW PRGXODU ,2 V\VWHPV and Compact IRU GLVWULEXWHG DSSOLFDWLRQV WKDW RIIHU DOO WKH IXQFWLRQV RI ODUJHU UDFNEDVHG ,


    Original     		PDF QWHJUD70 1794-VHSC 1794-PS13 Allen-Bradley 1794-irt8 manual Allen-Bradley 1794-irt8 1794-IRT8 specification 1794-TB3G WIRING DIAGRAM 1794-IRT8 1794-IE8 Allen-Bradley 1794-of4i manual Allen-Bradley 1794-ie8 manual

    Untitled

    Abstract: No abstract text available
    Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The


    Original     		PDF PTFA043002E PTFA043002 300-watt, H-30275-4

    Untitled

    Abstract: No abstract text available
    Text: ADS 783 ADS7834 4 SBAS098A – JANUARY 1998 – REVISED SEPTEMBER 2003 12-Bit High-Speed, Low-Power Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION ● ● ● ● ● ● ● ● ● The ADS7834 is a 12-bit sampling analog-to-digital converter A/D complete with sample/hold, internal 2.5V reference,


    Original     		PDF ADS7834 SBAS098A 12-Bit 500kHz 12-BITS ADS7834

    Untitled

    Abstract: No abstract text available
    Text: ADS 783 ADS7834 4 SBAS098A – JANUARY 1998 – REVISED SEPTEMBER 2003 12-Bit High-Speed, Low-Power Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION ● ● ● ● ● ● ● ● ● The ADS7834 is a 12-bit sampling analog-to-digital converter A/D complete with sample/hold, internal 2.5V reference,


    Original     		PDF ADS7834 SBAS098A 12-Bit ADS7834 500kHz

    PTFA043002E

    Abstract: PTFA043002 LM7805 type 103 capacitor, 2kv RF, 1300 pf BCP56
    Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The


    Original     		PDF PTFA043002E PTFA043002 300-watt, H-30275-4 PTFA043002E LM7805 type 103 capacitor, 2kv RF, 1300 pf BCP56

    diode marking code c34

    Abstract: AP561 cdm 12.1 laser
    Text: AP561 0.7-2.9 GHz WiMAX 8W Power Amplifier Product Features Product Description • 0.7 – 2.9 GHz • +39 dBm P1dB • 12.5 dB Gain • 1.5% EVM @ 30 dBm Pout Functional Diagram The AP561 is a high dynamic range broadband power amplifier in a surface mount package. The single-stage


    Original     		PDF AP561 AP561 JESD22-A114 JESD22-C101 J-STD-020 1-800-WJ1-4401 diode marking code c34 cdm 12.1 laser

    226 35K capacitor

    Abstract: capacitor 226 35K C40 Sprague 105 35K capacitor R 226 35k
    Text: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21120R6 226 35K capacitor capacitor 226 35K C40 Sprague 105 35K capacitor R 226 35k

    MARKING C33

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF5S19130HR3 MRF5S19130HSR3 MARKING C33

    K 2645 schematic circuit

    Abstract: diode t25 4 j3 776MHz AP561-PCB900 AP561-PCB2500
    Text: AP561 0.7-2.9 GHz 8W Power Amplifier Product Features Product Description • 0.7 – 2.9 GHz • +39 dBm P1dB • 13 dB Gain @ 2.6 GHz • 1.5% EVM @ 30 dBm Pout • +12 V Supply Voltage • Lead-free/green/RoHS-compliant 5x6 mm power DFN package Applications


    Original     		PDF AP561 AP561 JESD22-A114 JESD22-C101 J-STD-020 K 2645 schematic circuit diode t25 4 j3 776MHz AP561-PCB900 AP561-PCB2500