c337 transistor
Abstract: c338 transistor transistor c337 C337 w 79 C336 SMD C339 transistor c338 c336 transistors g10 smd transistor Transistor c340
Text: PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC20M-S
10kHz)
SMD-220
C-340
c337 transistor
c338 transistor
transistor c337
C337 w 79
C336 SMD
C339
transistor c338
c336 transistors
g10 smd transistor
Transistor c340
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c337 transistor
Abstract: C338 c338 transistor
Text: PH1825AL N-channel TrenchMOS logic level FET Rev. 01 — 22 April 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PH1825AL
PH1825AL
c337 transistor
C338
c338 transistor
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c337 transistor
Abstract: C337 w 79 transistor c337 C336 SMD c338 transistor c336 transistors C337 W 80 transistor C337 W transistor SMD LOA transistor c338
Text: Previous Datasheet Index Next Data Sheet PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC20M-S
10kHz)
SMD-220
C-340
c337 transistor
C337 w 79
transistor c337
C336 SMD
c338 transistor
c336 transistors
C337 W 80 transistor
C337 W
transistor SMD LOA
transistor c338
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SCD1U50V3KX-GP
Abstract: SC10U25V6KX-1GP G547F2 SC1U50V5ZY-1-GP SRN33J-7-GP SC10U6D3V3MX-GP SIS412DN-T1-GE3-GP 200KR2F-L-GP SC1U25V3KX-1-GP 10KR2F-2-GP
Text: 5 4 3 2 1 D D SW 1 10 1 EJECT_BTN 3 5 2 4 SW -TACT-119-GP 62.40009.671 62.40012.101 C C B B A A mini BD Wistron Corporation 21F, 88, Sec.1, Hsin Tai W u Rd., Hsichih, Taipei Hsien 221, Taiwan, R.O.C. Title ODD EJT BTN Size Document Number Rev -2 JM41_MINI_BD
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-TACT-119-GP
SKT-USB-295-GP
G547F2P81U-GP
SC4D7U16V5ZY-GP
SCD1U50V3KX-GP
00PAD
STFT236BR48H172-GP
SCD1U50V3KX-GP
SC10U25V6KX-1GP
G547F2
SC1U50V5ZY-1-GP
SRN33J-7-GP
SC10U6D3V3MX-GP
SIS412DN-T1-GE3-GP
200KR2F-L-GP
SC1U25V3KX-1-GP
10KR2F-2-GP
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DIODE SMD c336
Abstract: xcf025 xcf02sv020 b30 c300 DIODE cd c326 MOLEX 87832-1420 SMD fuse P200 xcf02sv020c smdc110f XCF025V
Text: High Speed Deserialization Board HSDB HSC-ADC-FPGA FUNCTIONAL BLOCK DIAGRAM MULTI-CHANNEL ADC EVALUATION BOARD POWER SUPPLY SERIAL LVDS PER ADC FILTERED ANALOG INPUT CLOCK CIRCUIT HSC-ADC-FPGA HSC-ADC-EVALA/B-DC +3V XILINX FPGA XC2V250 FIFO1 32k SPI CLOCK INPUT
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XC2V250
120-PIN
XC2V250-5FG256C
AD9287,
AD9219,
AD9228,
AD9229,
AD9259
EB05053-0-11/05
DIODE SMD c336
xcf025
xcf02sv020
b30 c300
DIODE cd c326
MOLEX 87832-1420
SMD fuse P200
xcf02sv020c
smdc110f
XCF025V
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PH1225A
Abstract: PH1225AL
Text: PH1225AL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 — 14 October 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is for computing use only
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PH1225AL
PH1225AL
PH1225A
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XCF02SV020C
Abstract: Xilinx xcf02sv020c manual SMHU diode c329 JP105 xcf02sv020 C337 W 63 c338 pin details SMHU transistor c331
Text: High Speed Deserialization Board HSDB HSC-ADC-FPGA FEATURES FUNCTIONAL BLOCK DIAGRAM STANDARD USB 2.0 SERIAL LVDS HIGH SPEED ADC EVALUATION BOARD PS HSC-ADC-FPGA PS REG n FILTERED ANALOG INPUT Any high speed ADC evaluation board that supports serial LVDS digital output format
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XC2V250
133MHz
120-PIN
05053-0RL
XC2V250-5FG256C
XCF02SV020C
CBSB-14-01A-RT
SNT-100-BK-G-H
HSC-ADC-FPGA-9289
XCF02SV020C
Xilinx xcf02sv020c
manual SMHU
diode c329
JP105
xcf02sv020
C337 W 63
c338 pin details
SMHU
transistor c331
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PSMN4R0-30YL
Abstract: No abstract text available
Text: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN4R0-30YL
PSMN4R0-30YL
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PSMN6R0-30YL
Abstract: No abstract text available
Text: PSMN6R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN6R0-30YL
PSMN6R0-30YL
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PSMN9R0-30YL
Abstract: c337 transistor
Text: PSMN9R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN9R0-30YL
PSMN9R0-30YL
c337 transistor
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PSMN7R0-30YL
Abstract: 10S100
Text: PSMN7R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN7R0-30YL
PSMN7R0-30YL
10S100
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PSMN1R5-25YL
Abstract: No abstract text available
Text: PSMN1R5-25YL N-channel TrenchMOS logic level FET Rev. 01 — 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN1R5-25YL
PSMN1R5-25YL
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PSMN1R2
Abstract: PSMN1R2-25YL
Text: PSMN1R2-25YL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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PSMN1R2-25YL
PSMN1R2-25YL
PSMN1R2
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PSMN7R0-30YL
Abstract: C337 40 w 22
Text: PSMN7R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 4 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN7R0-30YL
PSMN7R0-30YL
C337 40 w 22
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PSMN4R0-30YL
Abstract: No abstract text available
Text: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 31 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN4R0-30YL
PSMN4R0-30YL
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PSMN6R0-30YL
Abstract: No abstract text available
Text: PSMN6R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 4 Januari 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN6R0-30YL
PSMN6R0-30YL
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PH9030AL
Abstract: PH9030AL SOT669 PH9030A
Text: PH9030AL N-channel TrenchMOS logic level FET Rev. 07 — 14 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PH9030AL
PH9030AL
PH9030AL SOT669
PH9030A
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PSMN7R0-30YL
Abstract: PSMN7R0-30
Text: LF PA K PSMN7R0-30YL N-channel 30 V 7 mΩ logic level MOSFET in LFPAK Rev. 04 — 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN7R0-30YL
PSMN7R0-30YL
PSMN7R0-30
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F9530
Abstract: diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530
Text: HE 0 I 4A5S452 000 fl5âfl fi | Data Sheet No. PD-9.320F INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRFS530 IRF9531 P-Channel IRFS532 IRFS533 -100 Volt, 0.3 Ohm HEXFET T0-220AB Plastic Package Features: The HEXFET® technology is the key to International Rectifier’s
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T0-220AB
C-341
43S54S2
IRF9530,
IRF9531,
IRF9532,
IRF9533
T-39-21
C-342
F9530
diode C339
IRF9530
C337 W 63
complementary of irf9530
C337 W
IRF9530 complementary
diode c341
IRF9532
IR 9530
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irfz34n equivalent
Abstract: diode c335 diode C339 C337 W DIODE c336 C337 W 61 equivalent IRFZ34n IRFIZ34N
Text: PD - 9.1489A International IQR Rectifier IRFIZ34N HEXFET Power M O SFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated V dss = 55V RDS on = 0.04Q
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IRFIZ34N
C-338
C-339
irfz34n equivalent
diode c335
diode C339
C337 W
DIODE c336
C337 W 61
equivalent IRFZ34n
IRFIZ34N
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v42254-a3346
Abstract: V42254-A3216-B309
Text: SBM 383 with soldering terminal Type B_ Soldering pins fo r printed circuits Soldering pins, straight Special features - Extremely wide range of applications for job lots in laboratories and for use in mass-produced equipment. Few tools required for wiring and assembly.
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15-contact
25-contact
37-contact
V23529-A1221-B
25-contact,
v42254-a3346
V42254-A3216-B309
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burndy Y39
Abstract: YAV4C-TC14-FXB
Text: f_ I SE208075 I_ I ACCOMMODATES 5_ I_ 5_ I_ “* DIMENSIONS STUD SIZE CATALOG NUMBER 1/2 YA30-TC12-FXB 2.76 1.20 ±.04 .56 4.04 .62 2.70 £55J £30] m [14] [103] [16] [69J — 263 KcmiL C650/24 — - 7/2 250 FLEX CLASS I,K,M
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SE208075
SE206075-01
5E208075
burndy Y39
YAV4C-TC14-FXB
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C 337-25
Abstract: C 33725 c337 pnp transistor C 337-40 c 33740 transistor NPN c337 BC337 sot54 c337 transistor transistor c337 C337 W 63
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN general purpose transistor BC337 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V).
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BC337
BC327.
115002/00/03/pp8
C 337-25
C 33725
c337 pnp transistor
C 337-40
c 33740
transistor NPN c337
BC337 sot54
c337 transistor
transistor c337
C337 W 63
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EL 817 c337
Abstract: transistor c337 c337 transistor C337 W 61 DS4005
Text: DISCRETE SEMICONDUCTORS SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification
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BUK107-50DS
SC13a
BUK107-50
SCA54
137087/1200/02/pp12
EL 817 c337
transistor c337
c337 transistor
C337 W 61
DS4005
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