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    C3303 NPN Search Results

    C3303 NPN Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy

    C3303 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C3303 transistor

    Abstract: 2SC3303
    Text: 2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3303 Industrial Applications High Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ.)


    Original     		PDF 2SC3303 C3303 transistor 2SC3303

    C3303 transistor

    Abstract: C3303 C3303 npn 2SC3303
    Text: 2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3303 Industrial Applications High Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ.)


    Original     		PDF 2SC3303 C3303 transistor C3303 C3303 npn 2SC3303

    C3303 transistor

    Abstract: 2SC3303 C3303 C3303 npn
    Text: 2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3303 Industrial Applications High Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) · High speed switching time: tstg = 1.0 µs (typ.)


    Original     		PDF 2SC3303 C3303 transistor 2SC3303 C3303 C3303 npn

    C3303 transistor

    Abstract: 2SC3303 C3303 C3303 npn 2SC330
    Text: 2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3303 Industrial Applications High Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ.)


    Original     		PDF 2SC3303 C3303 transistor 2SC3303 C3303 C3303 npn 2SC330

    2SC3303

    Abstract: No abstract text available
    Text: 2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3303 Industrial Applications High Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ.)


    Original     		PDF 2SC3303 2SC3303

    C3303 transistor

    Abstract: 2SC3303 C3303 C3303 npn
    Text: 2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3303 Industrial Applications High Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ.)


    Original     		PDF 2SC3303 C3303 transistor 2SC3303 C3303 C3303 npn

    C3303 transistor

    Abstract: 2SC3303 C3303 npn C3303
    Text: 2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3303 Industrial Applications High Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ.)


    Original     		PDF 2SC3303 C3303 transistor 2SC3303 C3303 npn C3303

    2SC3303

    Abstract: No abstract text available
    Text: 2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3303 Industrial Applications High Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ.)


    Original     		PDF 2SC3303 2SC3303

    2SC3303

    Abstract: No abstract text available
    Text: 2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3303 Industrial Applications High Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ.)


    Original     		PDF 2SC3303 2SC3303

    2SC3303

    Abstract: C3303 npn C3303 2SC330
    Text: 2SC3303 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3303 ○ 大電流高速スイッチング用 ○ DC − DC コンバータ用 単位: mm • コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 3 A)


    Original     		PDF 2SC3303 20070701-JA 2SC3303 C3303 npn C3303 2SC330

    2SC3303

    Abstract: No abstract text available
    Text: 2SC3303 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3303 ○ 大電流高速スイッチング用 ○ DC − DC コンバータ用 単位: mm • コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 3 A)


    Original     		PDF 2SC3303 2SC3303

    C3303 npn

    Abstract: 2SC3303 C3303
    Text: 2SC3303 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3303 ○ 大電流高速スイッチング用 ○ DC − DC コンバータ用 単位: mm • コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 3 A)


    Original     		PDF 2SC3303 C3303 npn 2SC3303 C3303

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322

    MIC710

    Abstract: XC6875 MC1741L C4558C SG425 mc7724c NE533V General Instrument data book 741p SN75107
    Text: Master Index and Cross Reference Guide M IL-M -38510 Program and Chip Information Operational Amplifiers Voltage Regulators Interface Circuits Voltage Comparators Consumer Circuits Other Linear Circuits Package Information and Mounting Hardware Application Notes


    OCR Scan     		PDF 110-E77-20. MIC710 XC6875 MC1741L C4558C SG425 mc7724c NE533V General Instrument data book 741p SN75107