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    C30950 EQUIVALENT Search Results

    C30950 EQUIVALENT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation

    C30950 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET Photon Detection C30659-UV-1 UV APD Preamplifier Module Key Features • 50 MHz system bandwidth  Ultra low noise equivalent power NEP  Blue enhanced spectral response range  Power consumption: 150 mW typ  ±5 V amplifier operating voltages


    Original     		PDF C30659-UV-1 C30950 C30659 C30659-UV-1-Rev

    diode d1n914

    Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
    Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP


    Original     		PDF C30659 C30659-900-1060-1550nm 1100nm 1700nm 12-lead C30817com. diode d1n914 d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity

    C30817E

    Abstract: No abstract text available
    Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP


    Original     		PDF C30659 C30659-900-1060-1550nm 1100nm 1700nm 12-lead C30om. C30817E

    C30817E

    Abstract: datasheet apd 1550
    Text: PerkinElmer’s C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817EH, C30902EH, C30954EH, C30956EH,


    Original     		PDF C30659 12-lead C30817EH, C30902EH, C30954EH, C30956EH, C30645EH C30662EH, C30950 C30817E datasheet apd 1550

    C30817E

    Abstract: SILICON APD Pre-Amplifier
    Text: DATASHEET Photon Detection C30659 Series 900/1060/1550/1550E Si and InGaAs APD Preamplifier Modules Key Features E C -1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.


    Original     		PDF C30659 900/1060/1550/1550E -1550E C30817EH, C30902EH, C30954EH C30956EH C30645EH C30662EH C30817E SILICON APD Pre-Amplifier

    FND-100Q

    Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
    Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.


    Original     		PDF CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E

    Untitled

    Abstract: No abstract text available
    Text: G & G/CANADA/OPTOELEK WM • IQ 3D3DL1D 0G000M4 1TÔ io l «CANA Solid State Detectors ~ MW Electro Optics and Devices Developmental Types C30950 Seríes Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic


    OCR Scan     		PDF 0G000M4 C30950 6x10s 9x10s 9x104 C30950E, C30950F, C30950G

    C30817

    Abstract: photodiode preamplifier C30950E RCA C30817 preamplifier voltage RCA Solid State avalanche photodiodes C30950 equivalent C30902E C30950EL
    Text: C A INC/ ELECTRO OPTICS IDE D I 74A4L.75 000D04M 4 | ItCil */|- Solid State Detectors ~ Electro Optics and Devices Developmental Types C30950 Series Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic


    OCR Scan     		PDF 74fl4b75 000D044 C30950 6x10s 9x10s 9x104 6084V1 C30817 photodiode preamplifier C30950E RCA C30817 preamplifier voltage RCA Solid State avalanche photodiodes C30950 equivalent C30902E C30950EL

    C30950E

    Abstract: C30817 C30950EL photodiode preamplifier C30950 avalanche photodiode bias avalanche photodiodes C30902E emitter "1060 nm" RCA Solid State
    Text: E G & G/CANADA/OPTOELEK 10 D • Electro Optics and Devices _ 7 “^- *//•' iol 303DL1D 0000044 ITfl ■ CANA R G il Solid State Detectors Developmental Types C30950 Series € Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules


    OCR Scan     		PDF 303DL1D C30950 6x10s 9x10s C30950E C30817 C30950EL photodiode preamplifier avalanche photodiode bias avalanche photodiodes C30902E emitter "1060 nm" RCA Solid State

    C30950E

    Abstract: C30950EL C30950 equivalent C30817 30950G RCA Solid State C30950 C30902 C30902E
    Text: ELECTRO OPTICS R C IDE D /1 m Electro O ptics and Devices 3Û741S4 □□OODMM 1 m GEEO _ T ' - H l - io ~ J Solid State Detectors Developmental Types C30950 Series Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic


    OCR Scan     		PDF 741S4 C30950 6x10s 9x10s 9x104 C30950E C30950EL C30950 equivalent C30817 30950G RCA Solid State C30902 C30902E

    C30952E

    Abstract: C30952F C30950E rca solid state Linear RCA Solid State C30807 C30950G RCA Solid State amplifier C30952EL C30952FL
    Text: G & G/CANADA/OPTOELEK itesi ID D BDBGblD ODGGOMb Electro Optics and Devices T70 « C A N A /-Y/’b Solid State Detectors Developmental Types C30952 Series Photodiodes Very Wide Bandpass Silicon Photodiode - Preamplifier Modules Available With Integral Light Pipes For Fiber Optic Applications


    OCR Scan     		PDF 0004b C30952 5x103 0x103 0x102 LS-G084V1 C30952E C30952F C30950E rca solid state Linear RCA Solid State C30807 C30950G RCA Solid State amplifier C30952EL C30952FL

    C30952E

    Abstract: C30950E C30952F C30950 C30807 C30952EL C30952FL C30952G C30952GL C30971E
    Text: R C A 1QE D I 74041=75 DOQDOMt. A | 7 ' V A i » 7 INC/ ELECTRO OPTICS .N l / LLLv. I KV R C/1 Electro Optics and Devices Solid State Detectors Developmental Types C30952 Series f Photodiodes Very Wide B a n d p a ss Silicon Photodiode - Preamplifier M odules


    OCR Scan     		PDF 74S4fci C30952 5x10s 0x102 6084V1 C30952E C30950E C30952F C30950 C30807 C30952EL C30952FL C30952G C30952GL C30971E

    Untitled

    Abstract: No abstract text available
    Text: G & G/CANADA/OPTOELEK itesi ID D BDBGblD ODGGOMb Electro Optics and Devices T70 « C A N A /-Y/’b Solid State Detectors Developmental Types C30952 Series Photodiodes Very Wide Bandpass Silicon Photodiode - Preamplifier Modules Available With Integral Light Pipes For Fiber Optic Applications


    OCR Scan     		PDF C30952 5x103 0x103 C30952E, C30952F, C30952G 12-lead

    C30950E

    Abstract: C30950 equivalent RCA Solid State power devices C30952E rca 514 C30971 C30952F C30950 RCA 3,5 MM 4-PIN
    Text: G E ELECTRO OPTICS itCil IDE D Electro Optics and Devices 3Û74154 QQQQQ4b 5 H GEEO 7' V A k 7 Solid State Detectors Developmental Types C30952 Series € Photodiodes Very Wide Bandpass Silicon Photodiode - Preamplifier Modules Available With Integral Light Pipes For Fiber Optic Applications


    OCR Scan     		PDF C30952 5x103 0x103 0x102 C30950E C30950 equivalent RCA Solid State power devices C30952E rca 514 C30971 C30952F C30950 RCA 3,5 MM 4-PIN