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    C30916E Search Results

    C30916E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C30916E Unknown Large Area Silicon Avalanche Photodiode for General-Purpose Applications Scan PDF
    C30916E RCA Solid State Large Area Silicon Avalanche Photodiode Scan PDF

    C30916E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


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    PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    FND-100Q

    Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
    Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.


    Original
    PDF CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E

    C30902S

    Abstract: C30817E C30817 C30955EH
    Text: Photodiodes for High-Performance Applications Avalanche Avalanche Photodiodes Silicon and InGaAs APDs Photodiodes FOR Industrial & ANALYTICAL Applications Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range finder • Scanning video imager


    Original
    PDF C30902EH, C30921EH C30902SH, C30921SH C30902S C30817E C30817 C30955EH

    C30817E

    Abstract: C30955EH
    Text: PhotodiodeS฀For฀hiGh-PerFormAnce฀APPlicAtionS฀ Avalanche Photodiodes Silicon and InGaAs APDs Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range inder • Free space communication Product฀description hese rear entry “reach-through” silicon APDs ofer the best compromise in terms of cost and


    Original
    PDF C30902 C30902EH, C30921EH C30902SH, C30921SH C30817E C30955EH

    C30916E

    Abstract: No abstract text available
    Text: JL e G slG CANADA LTD. Optoelectronics Division Formerly D h A ^ H in ^ « ' P h O tO d lO d e R C il D evelopm ental Type Effective January 1, 1991 C30916E Large Area Silicon Avalanche Photodiode for General-Purpose Applications 85% typical at 900 nm •


    OCR Scan
    PDF C30916E C30916E

    C30916E

    Abstract: rca 036 spot photodetector
    Text: G & G/CANA]>A/OPTOELEK I t C J l 10 ]> I 3030blD 0000135 07b Electro uptics and Devices ICANA Photodiode Developmental Type C30916E - f - V 1-51 Large Area Silicon Avalanche Photodiode for General-Purpose Applications 8 5% typical at 900 nm Fast Tim e Response —


    OCR Scan
    PDF 3030blD C30916E C30916E ULS-S223R1 rca 036 spot photodetector

    Untitled

    Abstract: No abstract text available
    Text: E G & G/CANADA/OPTOELEK I t C / l T> I ID 3030blD 0DDD135 Electro uptics and Devices 07b « C A N A Photodiode Developm ental Type C30916E - f 'HI-51 Large Area Silicon Avalanche Photodiode for General-Purpose Applications High Quantum Efficiency 85% typical at 900 nm


    OCR Scan
    PDF 3030blD 0DDD135 C30916E HI-51 30916E

    C30817

    Abstract: C30954E ISO-9001-87 C30872 C30916E c30954 C30956E C30956 c30955e avalanche photodiodes
    Text: J L ,E G slG CANADA LTD. Optoelectronics Divisio Formerly i t C A Effective January 1,1991 ISO-9001-87 Cert *001975 Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications


    OCR Scan
    PDF ISO-9001-87 C30954E, C30955E, C30956E C30954E C30955E C30956E C30817 ISO-9001-87 C30872 C30916E c30954 C30956 c30955e avalanche photodiodes

    C30817

    Abstract: s915 C30872 C30954E C30955E tic 1060 C30956E s914 C30916E 92LS-S916
    Text: £ n G & G/CANADA/OPTOELEK e / ID » l Electro Optics 3 D 3 D b lO O O O O IH ^ bbO ICANA 'T '- y / '- S V Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —


    OCR Scan
    PDF 3030bl0 C30954E, C30955E, C30956E C30954E C30955E Range--40Â C30817 s915 C30872 C30955E tic 1060 C30956E s914 C30916E 92LS-S916

    Untitled

    Abstract: No abstract text available
    Text: £ G & G/CANADA/OPTOELEK I t C J I sfj ID D Electro Optics m 3030bl0 D O G G I E bbO ICANA Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —


    OCR Scan
    PDF 3030bl0 C30954E, C30955E, C30956E C30956E

    C30902E

    Abstract: C30904E avalanche photodiodes C30817 C30905E C30908E C30916E
    Text: R C A INC/ ELECTRO OPTICS 10E D • 7484k7S DDDD133 3 | r- Vi-íi C30904E. C30905E. C30908E Silicon Avalanche Photodiodes Developmental Types Silicon Avalanche Photodiodes With Integral Light Pipes — Desigred Especially for Optical Communication Systems


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    PDF 74fl4b75 DDDD133 C30904E, C30905E, C30908E C30902E C30904E avalanche photodiodes C30817 C30905E C30916E