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Excelitas Technologies Corporation C30902EH SENSOR PHOTODIODE 830NM TO18-2
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DigiKey	C30902EH	Box	212		1	1 $62.9 10 $59.375 100 $59.375 1000 $59.375 10000 $59.375	Buy Now
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Excelitas Technologies Corporation C30902EH-2 SENSOR PHOTODIODE 900NM TO18
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DigiKey	C30902EH-2	Box			50	1 - 10 - 100 $66.375 1000 $66.375 10000 $66.375	Buy Now

C30902E Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
C30902E	PerkinElmer Optoelectronics	Silicon Avalanche Photodiodes	Original	PDF
C30902E	EG&G Optoelectronics	High Speed Solid State Detectors for Fibre Optic and Very Low Light Level Apps	Scan	PDF
C30902EH	Excelitas Technologies	SI APD 0.5MM HIGH RESPONSE TO-18	Original	PDF
C30902EH-2	Excelitas Technologies	SI APD, 0.5MM, TO-18 HIGH RESPON	Original	PDF

C30902E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
C30902SH-DTC Abstract: C30902EH PerkinElmer Avalanche Photodiode APD, laser, range, finder C30902 geiger apd C30902SH PerkinElmer mode a C3092SH-TC PerkinElmer trigger mode Text: Introduction PerkinElmer Type C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. The responsivity of the	Original	C30902EH C30921EH C30902SH-DTC PerkinElmer Avalanche Photodiode APD, laser, range, finder C30902 geiger apd C30902SH PerkinElmer mode a C3092SH-TC PerkinElmer trigger mode	PDF
C30902S Abstract: C30902E geiger PerkinElmer Avalanche Photodiode geiger counter C30921E avalanche photodiode c30902e PerkinElmer trigger avalanche photodiode bias C30921S Text: Description Silicon Avalanche Photodiodes PerkinElmer Type C30902E avalanche C30902E, C30902S, C30921E, C30921S EVERYTHING High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications IN A photodiode utilizes a silicon detector chip	Original	C30902E C30902E, C30902S, C30921E, C30921S C30902S geiger PerkinElmer Avalanche Photodiode geiger counter C30921E avalanche photodiode c30902e PerkinElmer trigger avalanche photodiode bias C30921S	PDF
C30902EH Abstract: No abstract text available Text: Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview Features and Benefits Excelitas’ C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This	Original	C30902 C30902EH C30921EH DTS0408	PDF
Untitled Abstract: No abstract text available Text: DATASHEET Photon Detection C30902 and C30921 Series High-speed solid state detectors for low light level applications Key Features • High quantum efficiency: 77% typical at 830 nm  C30902SH and C30921SH can be operated in Geiger mode  C30902EH/SH-2 version with	Original	C30902 C30921 C30902SH C30921SH C30902EH/SH-2 C30902BH C30902EH	PDF
C30902EH Abstract: C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz C30921EH Text: High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as	Original	C30902EH C30921EH DTS0408 C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz	PDF
C30817E Abstract: datasheet apd 1550 Text: PerkinElmer’s C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817EH, C30902EH, C30954EH, C30956EH,	Original	C30659 12-lead C30817EH, C30902EH, C30954EH, C30956EH, C30645EH C30662EH, C30950 C30817E datasheet apd 1550	PDF
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383	PDF
FND-100Q Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.	Original	CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E	PDF
diode d1n914 Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP	Original	C30659 C30659-900-1060-1550nm 1100nm 1700nm 12-lead C30817com. diode d1n914 d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity	PDF
C30902S Abstract: C30817E C30817 C30955EH Text: Photodiodes for High-Performance Applications Avalanche Avalanche Photodiodes Silicon and InGaAs APDs Photodiodes FOR Industrial & ANALYTICAL Applications Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range finder • Scanning video imager	Original	C30902EH, C30921EH C30902SH, C30921SH C30902S C30817E C30817 C30955EH	PDF
C30817E Abstract: C30955EH Text: PhotodiodeS฀For฀hiGh-PerFormAnce฀APPlicAtionS฀ Avalanche Photodiodes Silicon and InGaAs APDs Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range inder • Free space communication Product฀description hese rear entry “reach-through” silicon APDs ofer the best compromise in terms of cost and	Original	C30902 C30902EH, C30921EH C30902SH, C30921SH C30817E C30955EH	PDF
Untitled Abstract: No abstract text available Text: DATASHEET Photon Detection LLAM Series 900/1060/1550/1550E Si and InGaAs Low-Light Analog APD Receiver Modules LLAM Key Features E LLAM-1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.	Original	900/1060/1550/1550E LLAM-1550E 12-lead	PDF
C30817E Abstract: No abstract text available Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP	Original	C30659 C30659-900-1060-1550nm 1100nm 1700nm 12-lead C30om. C30817E	PDF
PerkinElmer Avalanche Photodiode Abstract: C30902 C30737EH C30902S PerkinElmer Optoelectronics C30902E avalanche photodiode bias and high voltage C30737E-500 photodiode Avalanche photodiode C30737 Text: Description The C30737 type avalanche photodiode provides high responsivity between 500nm and 1000nm, as well as extremely fast rise times at all wavelengths with a frequency response up to 1.0 GHz. The active area diameter of the photosensitive surface is 0.5mm.	Original	C30737 500nm 1000nm, MIL-STD-883 MIL-STD-750. DTS0206 C30737EH PerkinElmer Avalanche Photodiode C30902 C30737EH C30902S PerkinElmer Optoelectronics C30902E avalanche photodiode bias and high voltage C30737E-500 photodiode Avalanche photodiode	PDF

C30817E Abstract: SILICON APD Pre-Amplifier Text: DATASHEET Photon Detection C30659 Series 900/1060/1550/1550E Si and InGaAs APD Preamplifier Modules Key Features E C -1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.	Original	C30659 900/1060/1550/1550E -1550E C30817EH, C30902EH, C30954EH C30956EH C30645EH C30662EH C30817E SILICON APD Pre-Amplifier	PDF
Untitled Abstract: No abstract text available Text: E fi 8, G/CANADA/OPTOELEK n c i i 3D3DblG ÜÜÜD12L. 0b3 • CANA T1 1D E le c tro Silicon Avalanche Photodiodes OptiCS C30902E, C30902S, C3 0921E, C30921S DATA SHEET High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications RCA Type C30902E ava	OCR Scan	C30902E, C30902S, 0921E, C30921S C30902E L-571 L-933 C30921E C30902E C30902S	PDF
C30902E Abstract: 30902E EGG Optoelectronics C30902BFC avalanche photodiodes avalanche photodiode C30902 C30921E geiger C3090 Text: 1 J l E C s 3 1 - 3 9 8 C O P TO ELECTR O N ICS C30902E, C30902S, C30921E. C 3 0921S, C30902BST, C30902BFC C c J i7 c iC / < 3 High Speed Solid State Detectors for Fibre Optic and Very Low Light-Level Applications EG&G 30902E avalanche photodiode utilises a silicon	OCR Scan	C30902E, C30902S. C30921E. C30921S, C30902BST. C30902BFC 30902E C30902E/S C30921E/S C30902E EG*G Optoelectronics C30902BFC avalanche photodiodes avalanche photodiode C30902 C30921E geiger C3090	PDF
C30902E Abstract: C30921S avalanche photodiode c30902e C30921E C30902 740417 C30902S geiger RCA Transistor rca power transistor Text: RCA IO E D I 7MfiMb7S OQOQlSb U \| T ' H i - INC/ ELECTRO OPTICS I t C il Silicon Avalanche Photodiodes C30902E, C30902S, C30921E, C3Q921S >?!-»»»'r.-V- D A T A S H E E T High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications	OCR Scan	C30902E, C30902S, C30921E, C30921S L-571 L-933 C30902E C30921E C30902S C30921S avalanche photodiode c30902e C30921E C30902 740417 geiger RCA Transistor rca power transistor	PDF
C30902S Abstract: diode C309 C30902E rangefinding tr c3090 C30902 DEAD TIME FOR THE DETECTOR C30902 geiger counter C30921E avalanche photodiode bias Text: E G & G/CANADA/OPTOELEK I t c / T OptiCS IO T1 Silicon Avalanche Photodiodes 3G3DblD DDGDlEb 0b3 • CANA » C30902E, C30902S, C30921E, C30921S DATA SHEET I High Speed Solid State Detectors for Fiber Optic and Very L o w Lig h t-Le ve l Applications RCA Type C30902E ava	OCR Scan	C30902E, C30902S, C30921E, C30921S L-571 L-933 C30902E C30921E C30902S diode C309 rangefinding tr c3090 C30902 DEAD TIME FOR THE DETECTOR C30902 geiger counter C30921E avalanche photodiode bias	PDF
Untitled Abstract: No abstract text available Text: G & G/CANADA/OPTOELEK WM • IQ 3D3DL1D 0G000M4 1TÔ io l «CANA Solid State Detectors ~ MW Electro Optics and Devices Developmental Types C30950 Seríes Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic	OCR Scan	0G000M4 C30950 6x10s 9x10s 9x104 C30950E, C30950F, C30950G	PDF
C30817 Abstract: photodiode preamplifier C30950E RCA C30817 preamplifier voltage RCA Solid State avalanche photodiodes C30950 equivalent C30902E C30950EL Text: C A INC/ ELECTRO OPTICS IDE D I 74A4L.75 000D04M 4 \| ItCil */\|- Solid State Detectors ~ Electro Optics and Devices Developmental Types C30950 Series Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic	OCR Scan	74fl4b75 000D044 C30950 6x10s 9x10s 9x104 6084V1 C30817 photodiode preamplifier C30950E RCA C30817 preamplifier voltage RCA Solid State avalanche photodiodes C30950 equivalent C30902E C30950EL	PDF
C30950E Abstract: C30817 C30950EL photodiode preamplifier C30950 avalanche photodiode bias avalanche photodiodes C30902E emitter "1060 nm" RCA Solid State Text: E G & G/CANADA/OPTOELEK 10 D • Electro Optics and Devices _ 7 “^- *//•' iol 303DL1D 0000044 ITfl ■ CANA R G il Solid State Detectors Developmental Types C30950 Series € Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules	OCR Scan	303DL1D C30950 6x10s 9x10s C30950E C30817 C30950EL photodiode preamplifier avalanche photodiode bias avalanche photodiodes C30902E emitter "1060 nm" RCA Solid State	PDF
C30902E Abstract: C30904E avalanche photodiodes C30817 C30905E C30908E C30916E Text: R C A INC/ ELECTRO OPTICS 10E D • 7484k7S DDDD133 3 \| r- Vi-íi C30904E. C30905E. C30908E Silicon Avalanche Photodiodes Developmental Types Silicon Avalanche Photodiodes With Integral Light Pipes — Desigred Especially for Optical Communication Systems	OCR Scan	74fl4b75 DDDD133 C30904E, C30905E, C30908E C30902E C30904E avalanche photodiodes C30817 C30905E C30916E	PDF
C30950E Abstract: C30950EL C30950 equivalent C30817 30950G RCA Solid State C30950 C30902 C30902E Text: ELECTRO OPTICS R C IDE D /1 m Electro O ptics and Devices 3Û741S4 □□OODMM 1 m GEEO _ T ' - H l - io ~ J Solid State Detectors Developmental Types C30950 Series Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic	OCR Scan	741S4 C30950 6x10s 9x10s 9x104 C30950E C30950EL C30950 equivalent C30817 30950G RCA Solid State C30902 C30902E	PDF

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C30902E Price and Stock

Excelitas Technologies Corporation C30902EH

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C30902E Datasheets (4)

C30902E Datasheets Context Search

C30902SH-DTC

C30902S

C30902EH

Untitled

C30902EH

C30817E

C1383 NPN transistor collector base and emitter

FND-100Q

diode d1n914

C30902S

C30817E

Untitled

C30817E

PerkinElmer Avalanche Photodiode

C30817E

Untitled

C30902E

C30902E

C30902S

Untitled

C30817

C30950E

C30902E

C30950E