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    C246 TRANSISTOR Search Results

    C246 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    C246 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor c243

    Abstract: transistor c246 C 245 B C-247 C-248 D-12 IRGBF30F
    Text: PD - 9.773 IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 3.7V


    Original     		PDF IRGBF30F 10kHz) O-220AB C-248 transistor c243 transistor c246 C 245 B C-247 C-248 D-12 IRGBF30F

    transistor c245

    Abstract: transistor c246 transistor c243 c245 transistor transistor c247 C243 transistor C247 c246 transistor IRGBF30F C-247
    Text: PD - 9.773 IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 3.7V


    Original     		PDF IRGBF30F 10kHz) O-220AB C-248 transistor c245 transistor c246 transistor c243 c245 transistor transistor c247 C243 transistor C247 c246 transistor IRGBF30F C-247

    transistor c246

    Abstract: transistor c243 C-247 C-248 D-12 IRGBF30F IC 2 5/transistor c243
    Text: Previous Datasheet Index Next Data Sheet PD - 9.773 IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


    Original     		PDF IRGBF30F 10kHz) O-220AB C-248 transistor c246 transistor c243 C-247 C-248 D-12 IRGBF30F IC 2 5/transistor c243

    transistor c246

    Abstract: transistor c245 transistor c243 c243 SA900 L372 c371 transistor SA900BE IS-136 SA7025
    Text: INTEGRATED CIRCUITS SA900 I/Q transmit modulator Preliminary specification IC17 Data Handbook Philips Semiconductors 1997 Sept 16 Philips Semiconductors Preliminary specification I/Q transmit modulator SA900 DO NOT DISTRIBUTE WITHOUT ECN DATED AFTER Sept 16, 1997


    Original     		PDF SA900 SA900 transistor c246 transistor c245 transistor c243 c243 L372 c371 transistor SA900BE IS-136 SA7025

    transistor c246

    Abstract: L372 smd transistor device marking p18 transistor c245 smd transistor marking code T11 philips radio 900MHz semiconductor SMD MARKING CODE ad 5.9 SA900
    Text: INTEGRATED CIRCUITS SA900 I/Q transmit modulator Preliminary specification IC17 Data Handbook Philips Semiconductors 1997 Sept 16 Philips Semiconductors Preliminary specification I/Q transmit modulator SA900 DO NOT DISTRIBUTE WITHOUT ECN DATED AFTER Sept 16, 1997


    Original     		PDF SA900 SA900 transistor c246 L372 smd transistor device marking p18 transistor c245 smd transistor marking code T11 philips radio 900MHz semiconductor SMD MARKING CODE ad 5.9

    transistor c246

    Abstract: delta PLC dvp28sv operation manual DVP28SV11T delta dvp plc communication cable wiring diagram delta dvp28sv WPLSoft user manual dvp28sv11r PLC programming user manual K216 transistor DVP28SV D2000 transistor
    Text: 2006-10-12 Y Function Specifications Item Specification Operation control method 5011650500-SVE0 http://www.delta.com.tw/industrialautomation/ PLC that is micro, multi-functional, and with various instructions Operation processing speed Program language Stored program; cyclic scanning system


    Original     		PDF 5011650500-SVE0 Y377utput transistor c246 delta PLC dvp28sv operation manual DVP28SV11T delta dvp plc communication cable wiring diagram delta dvp28sv WPLSoft user manual dvp28sv11r PLC programming user manual K216 transistor DVP28SV D2000 transistor

    DVP-10SX

    Abstract: DVP-14SS delta plc DVP 14SS DVP-32EH DVP-80EH DVP-64EH DVP-32ES DVP-48EH DVP-60ES DVP-20EX
    Text: PLC www.delta.com.tw/industrialautomation PLC ASIA Delta Electronics, Inc. Taoyuan1 31-1, Xingbang Road, Guishan Industrial Zone, Taoyuan County 33370, Taiwan, R.O.C. TEL: 886-3-362-6301 / FAX: 886-3-362-7267 Delta Electronics Jiang Su Ltd. Wujiang Plant3


    Original     		PDF K100000 DVP-10SX DVP-14SS delta plc DVP 14SS DVP-32EH DVP-80EH DVP-64EH DVP-32ES DVP-48EH DVP-60ES DVP-20EX

    MMA0204-50

    Abstract: Zener C444 MMA-0204-50 C343 "zener diode" zener c346 C406 Zener BUF C221 diode c446 c343 diode motorola D402 user guide
    Text: Application Report SLEA032 - MARCH 2004 TAS5066-5121K6EVM Application Report Jonas Svendsen Digital Audio & Video Products The TAS5066-5121K6EVM PurePath Digital customer evaluation module demonstrates two integrated circuits TAS5066 and TAS5121DKD from Texas Instruments TI .


    Original     		PDF SLEA032 TAS5066-5121K6EVM TAS5066 TAS5121DKD 24-bit 192kHz. MMA0204-50 Zener C444 MMA-0204-50 C343 "zener diode" zener c346 C406 Zener BUF C221 diode c446 c343 diode motorola D402 user guide

    equivalent transistor D1555

    Abstract: transistor d1555 transistor d1047 d1555 transistor TRANSISTOR DATASHEET D1555 delta plc DVP 14SS DVP-40EH DVP-10SX d1555 D1557
    Text: PLC PLC DVP-PLC Application Manual 【Programming】 Table of Contents Chapter 1 Basic Principles of PLC Ladder Diagram Foreword: Background and Functions of PLC . 1-1 1.1 The Working Principles of Ladder Diagram . 1-1


    Original     		PDF 32-bit 32-bit 16-bit K100000 equivalent transistor D1555 transistor d1555 transistor d1047 d1555 transistor TRANSISTOR DATASHEET D1555 delta plc DVP 14SS DVP-40EH DVP-10SX d1555 D1557

    DVP-40EH

    Abstract: DVP-10SX DVP28SV11R2 DVP-32EH DVP14Ec DVP80EH00R3 DVP40es DVP-14SS DVP-08SN DVP64EH00R3
    Text: DVP-PLC Application Manual Programming Industrial Automation Headquarters Delta Electronics, Inc. Taoyuan Technology Center No.18, Xinglong Rd., Taoyuan City, Taoyuan County 33068, Taiwan TEL: 886-3-362-6301 / FAX: 886-3-371-6301 Asia Delta Electronics (Jiangsu) Ltd.


    Original     		PDF 113-API API156 296-API DVP-40EH DVP-10SX DVP28SV11R2 DVP-32EH DVP14Ec DVP80EH00R3 DVP40es DVP-14SS DVP-08SN DVP64EH00R3

    d480 NPN

    Abstract: A715 transistor TRANSISTOR NPN D362 transistor a715 kemet capacitor 100nF 0603 d480 mosfet r466 mosfet capacitor wima mks 4 U740 aks ti 79
    Text: Application Report SLEA026 – December 2003 TAS5076-5182C6EVM Kim Nordtorp Madisen Digital Audio & Video Products ABSTRACT The TAS5076-5182C6EVM board is a six channel Pure Path Digital evaluation module for the integrated circuits TAS5076PFC and TAS5182DCA from Texas Instruments TI .


    Original     		PDF SLEA026 TAS5076-5182C6EVM TAS5076-5182C6EVM TAS5076PFC TAS5182DCA 24-bit TAS5076 TAS5182, d480 NPN A715 transistor TRANSISTOR NPN D362 transistor a715 kemet capacitor 100nF 0603 d480 mosfet r466 mosfet capacitor wima mks 4 U740 aks ti 79

    FX-48MR

    Abstract: mitsubishi plc FX SERIES JY992D88101 mitsubishi pc FX1n SERIES cable connection mitsubishi FX series instruction list FX2N-2DA D8050 mitsubishi plc FX1s SERIES cable mitsubishi plc FX SERIES connection cable D8145
    Text: PROGRAMMING MANUAL II THE FX SERIES OF PROGRAMMABLE CONTROLLER FX1S, FX1N, FX2N, FX2NC FX Series Programmable Controllers FX Series Programmable Controllers Programming Manual Manual number : JY992D88101 Manual revision : A Date : April 2000 Foreword • This manual contains text, diagrams and explanations which will guide the reader in


    Original     		PDF JY992D88101 JY992D88101A J24532 FX-48MR mitsubishi plc FX SERIES JY992D88101 mitsubishi pc FX1n SERIES cable connection mitsubishi FX series instruction list FX2N-2DA D8050 mitsubishi plc FX1s SERIES cable mitsubishi plc FX SERIES connection cable D8145

    XTAL200

    Abstract: No abstract text available
    Text: User's Guide SLLU121 – October 2009 TLK100 External Voltages EVM This User Guide details the design and operation of the evaluation module EVM for the TLK100. 1 2 3 4 5 6 Contents TLK100 EVM Purpose and Content .


    Original     		PDF SLLU121 TLK100 TLK100. TLK100EXTEVM XTAL200

    npn transistor smd w19

    Abstract: LFE3-35E-FN484CES 88e1119r 88E1119 AA19 smd diode smd transistor w17 pDS4102-DL diode C238 88E111 FTD2232
    Text:  LatticeECP3 Versa Evaluation Board User’s Guide July 2013 Revision: EB62_01.6  LatticeECP3 Versa Evaluation Board User’s Guide Introduction The LatticeECP3 Versa Evaluation Board allows designers to investigate and experiment with the features of the


    Original     		PDF 25MHZ HC49US-25 000MABJUB HC49/US 1K-0402SMT ERJ-2RKF3012X 1/10W 20K-0402SMT ERJ-2RKF2002X npn transistor smd w19 LFE3-35E-FN484CES 88e1119r 88E1119 AA19 smd diode smd transistor w17 pDS4102-DL diode C238 88E111 FTD2232

    88E1119R

    Abstract: 88E1119 AA7 smd diode smd transistor M21 LFE3-35E-FN484CES MT41J64M16JT-15E smd transistor w18 W17 smd package transistor w18 smd transistor SMD Transistor Y13
    Text:  LatticeECP3 Versa Evaluation Board User’s Guide February 2012 Revision: EB62_01.4  LatticeECP3 Versa Evaluation Board User’s Guide Introduction The LatticeECP3 Versa Evaluation Board allows designers to investigate and experiment with the features of the


    Original     		PDF HC49US-25 000MABJUB HC49/US 1K-0402SMT ERJ-2RKF3012X 1/10W 20K-0402SMT ERJ-2RKF2002X 100PF-0402SMT 88E1119R 88E1119 AA7 smd diode smd transistor M21 LFE3-35E-FN484CES MT41J64M16JT-15E smd transistor w18 W17 smd package transistor w18 smd transistor SMD Transistor Y13

    sot23 w32

    Abstract: c220 amp PCB layout GRM42X5R106K10 1a7 sot-23 C2371 257BG J11J13 L17 351a ADS5120 SN74AVC16827
    Text: ADS5120EVM SBAU078 – JUNE 2002 FEATURES DESCRIPTION ● FULLY POPULATED EVM This user’s guide describes the function and operation of the ADS5120 evaluation module. It is designed for ease of use when evaluating the high-speed Analog-to-Digital Converter


    Original     		PDF ADS5120EVM SBAU078 ADS5120 ADS5120. 10-bit 40MSPS. ADS5120 sot23 w32 c220 amp PCB layout GRM42X5R106K10 1a7 sot-23 C2371 257BG J11J13 L17 351a SN74AVC16827

    diode c248

    Abstract: sef542 C246 SGSP381 SEF541 C-247 SEF543 C247 sgs*P381 C245
    Text: S G S-THOMSON 0 7 E 1 | 7 ^ 3 1 2 3 ? 0 0 1 6 0 2 5 3 ' 73C 17522 D /T SEF541 SEFS42 SEFS43 N-CHANNEL POWER MÛS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS V D SS R D S ON) 60V 0.085 Q 27A 100 V/60V 0.11 24A SEF541 SEF542 These products are diffused multi-cell silicon gate


    OCR Scan     		PDF SEF541 SEFS42 SEFS43 SEF542 SEF543 SEF542/SEF543 300/us, SEF541, SGSP381 SEF542/SEF543, diode c248 C246 C-247 C247 sgs*P381 C245

    transistor c246

    Abstract: transistor c243 C246 C243 transistor IRGBF30F
    Text: International l« i Rectifier PD - 9.773 IRGBF30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


    OCR Scan     		PDF 10kHz) IRGBF30F O-220AB TQ-220AB C-248 transistor c246 transistor c243 C246 C243 transistor IRGBF30F

    transistor c246

    Abstract: transistor c245 c245 transistor
    Text: PD - 9.773 International üüRectffier IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features JI* Lc J *.J • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve


    OCR Scan     		PDF IRGBF30F 10kHz) O-220AB C-247 46S5455 TQ-220AB C-248 transistor c246 transistor c245 c245 transistor

    f630

    Abstract: IRF630 HEXFET TRANSISTORS F633 IRFG31 IRF632 alps 103 DIODE C244 mosfet f630 IRFB32 IRF63Q
    Text: HE D I 4 055452 ÜGQâMTS t, | Data Sheet No. PD-9.309G INTERNATI ONAL RECTIFIER T -39-11 INTERNATIONAL RECTIFIER I “ R HEXFET* TRANSISTORS IRF63Q IRFG31 IM IRFB32 - C h a n n e l IRF633 Features: 200 Volt, 0.4 Ohm HEXFET TQ-220AB Plastic Package The HEXFET technology is the key to International Rec­


    OCR Scan     		PDF IRF63Q IRFG31 IRFB32 IRF633 TQ-220AB C-245 IRF630, IRF631, IRF632, IRF633 f630 IRF630 HEXFET TRANSISTORS F633 IRF632 alps 103 DIODE C244 mosfet f630

    C2631 transistor

    Abstract: IC vco 900 1800 mhz 12pf varactor c2631 SA900 transistor c2631 IS-54 KV1470 SA7025 SA900BE
    Text: RF COMMUNICATIONS PRODUCTS U M P k S l n l E E SA900 l/Q transmit modulator Product specification December 15, 1994 IC17 Data Handbook Philips Semiconductors PHILIPS PH ILIPS 9 711002b Q0AM5Ô0 551 This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors RF Communications Products


    OCR Scan     		PDF SA900 711002b SA900 C2631 transistor IC vco 900 1800 mhz 12pf varactor c2631 transistor c2631 IS-54 KV1470 SA7025 SA900BE

    SA900

    Abstract: 01-102-23 lc 9202 VGA Multiplier IC IS-54 SA7025 SA900BE h t o 2000 varactor tuned oscillator 836Mhz vco
    Text: Product specification Philips Semiconductors SA900 l/Q transmit modulator PIN CONFIGURATION DESCRIPTION The SA900 is a m onolithic high perform ance, m ulti-function transm it m odulator for use in cellular radio applications, fabricated in QUBiC BiCM O S technology. The SA900 features both analog AMPS


    OCR Scan     		PDF SA900 SA900 OT313-2 7110fl2b 01-102-23 lc 9202 VGA Multiplier IC IS-54 SA7025 SA900BE h t o 2000 varactor tuned oscillator 836Mhz vco

    CD8404BE

    Abstract: 560H C307 IS-54 KV1470 L372 SA7025 SA900 transistor c246 f820836
    Text: Philips Semiconductors Product specification CD8404 l/Q transmit modulator DESCRIPTION PIN CONFIGURATION The SA900 is a monolithic high performance, m ulti-function transm it m odulator for use in cellular radio applications, fabricated in QUBiC BiCMOS technology. TheCD8404 features both analog AMPS


    OCR Scan     		PDF CD8404 SA900 TheCD8404 OT313-2 CD8404BE 560H C307 IS-54 KV1470 L372 SA7025 transistor c246 f820836

    CD8404BE

    Abstract: IC 74175 SG-82 VGA Multiplier IC 560H C307 IS-54 KV1470 L372 SA7025
    Text: Philips Semiconductors Product specification CD8404 l/Q transmit modulator DESCRIPTION PIN CONFIGURATION The SA900 is a monolithic high performance, m ulti-function transm it m odulator for use in cellular radio applications, fabricated in QUBiC BiCMOS technology. TheCD8404 features both analog AMPS


    OCR Scan     		PDF CD8404 SA900 TheCD8404 OT313-2 CD8404BE IC 74175 SG-82 VGA Multiplier IC 560H C307 IS-54 KV1470 L372 SA7025