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    C237 DIODE Search Results

    C237 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    C237 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c1237

    Abstract: SP12T MS3112E MS3112E16-26P MS3112E-16-26P c237 ms3116E transistor c237 uPC1237 DC-12
    Text: Wireless Products Electromechanical RF Switches Active Components Passive Components RF Radiation Safety Products Power Meters/Monitors Main Menu Multiposition Switches — SP11T-SP12T Series 110-120 SP11T-SP12T DC-12.4 GHz / SMA RF PERFORMANCE Frequency Range GHz


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    PDF SP11T-SP12T DC-12 180mA 100mA 400mA Seque12T SP12T 50-ohm c1237 MS3112E MS3112E16-26P MS3112E-16-26P c237 ms3116E transistor c237 uPC1237

    transistor C143

    Abstract: C144 transistor c225 diode smd transistor C144 Transistor c233 c143 transistor Transistor c226 transistor c223 transistor C147 TRANSISTOR c231
    Text: ElanSC520 Microcontroller CDP Revised: Tuesday, Aug. 10, 1999 Revision: 1.0 C Advanced Micro Devices, Inc. (800) 222-9323 5204 E. Ben White Blvd. Austin, TX 78741 AMD Proprietary/All Rights Reserved Bill Of Materials Item Quantity 1 2 1 127 3 46 Aug. 10,1999


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    PDF ElanSC520 000MHz 768kHz 333MHz 318MHz ECSMA-25 ECSMA-24 ECPSM29T-32 transistor C143 C144 transistor c225 diode smd transistor C144 Transistor c233 c143 transistor Transistor c226 transistor c223 transistor C147 TRANSISTOR c231

    samsung r540

    Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
    Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP


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    PDF ZD500 QF500 RHU002N06 200MA OT-323 F820P 33x33mm 500MHz K4J52324QC 512Mbit samsung r540 Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535

    M5819P

    Abstract: 5-pin smd c255 NPN C239 C312 diode c227 diode MOSFET R166 SPE1302-ND S5920Q NPN C246 diode c248
    Text: AMD K6 SDB - TOP LEVEL Revised: Friday, March 12, 1999 K6SDBREVB Revision: REV C Item Quantity Reference Value _ 1 2 1 BT1 27 C1,C2,C4,C8,C12,C20,C21, C23,C26,C36,C37,C38,C42, C47,C56,C59,C60,C61,C62, C63,C64,C68,C79,C95,C97,


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    PDF QFP160 100MHz SSOP48 32-bit, QFP208 TS040 QFP144 TP11SH8 PE68515 PLCC32 M5819P 5-pin smd c255 NPN C239 C312 diode c227 diode MOSFET R166 SPE1302-ND S5920Q NPN C246 diode c248

    HSMS-2812BLK

    Abstract: gs e501 smd diode c527 L404 c531 diode smd smd diode c525 FL201 epson main c224 smd diode c528 C529 DIODE smd
    Text: Evaluation Board User Guide UG-294 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Evaluating the AD9644/AD9641 Analog-to-Digital Converters FEATURES DOCUMENTS NEEDED Full featured evaluation board for the AD9644 or AD9641


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    PDF UG-294 AD9644/AD9641 AD9644 AD9641 AD9524 AD9641 ADP2114 ADP2108 HSMS-2812BLK gs e501 smd diode c527 L404 c531 diode smd smd diode c525 FL201 epson main c224 smd diode c528 C529 DIODE smd

    FSD210 equivalent

    Abstract: EER-2828 PC40 TDK EER3542 core EER3542 equivalent fan7382 bobbin EER3542 TDK Ferrite Core PC40 D223 DIODE EER2834
    Text: Designing the Power Train of a 200W Power Supply with PFC Michael Weirich Global Power Resource Center, Europe www.fairchildsemi.com Design issues for 200W PSU System Specification • AC Input Voltage: 85 – 265 Vrms • Power-Factor: > 0.95 • Total Output Power: 200W


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    PDF 95V-265V FSD210 equivalent EER-2828 PC40 TDK EER3542 core EER3542 equivalent fan7382 bobbin EER3542 TDK Ferrite Core PC40 D223 DIODE EER2834

    BC647

    Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
    Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23


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    PDF MMBD4148 200MA OT-23 MBR0540 OD-123 1000MA DO-214AC B340A 5245B 225MW BC647 bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645

    77C7

    Abstract: 887c 1r12r
    Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23


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    TAS5242

    Abstract: transistor c923 transistor c915 dx C212 diode DCU 0805 C143 C923 C922 SWITCHING TRANSISTOR C144 C901
    Text: Application Report SLEA056 - JULY 2006 TAS5086-5142V6EVM Application Report Tomas Bruunshuus Digital Audio & Video Products The TAS5086-5142V6EVM PurePath Digital customer evaluation module demonstrates the integrated circuits, TAS5086DBT and TAS5142DDV, from Texas Instruments TI .


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    PDF SLEA056 TAS5086-5142V6EVM TAS5086DBT TAS5142DDV, 32-bit 24-bit TAS5142DDV 5007pcb TAS5242 transistor c923 transistor c915 dx C212 diode DCU 0805 C143 C923 C922 SWITCHING TRANSISTOR C144 C901

    CC0402KRX7R9BB102

    Abstract: yageo R68 choke C210-C215 R118-R122 AA19 smd diode SMD capacitor aa4 aa5 C216-C221 smd diode u1j sot23-5 SMD CODE E5 c225 diode smd
    Text: S1D13771 S5U13771B00B USB Evaluation Board User Manual Document Number: X82A-G-001-01 Status: Revision 1.01 Issue Date: 2006/07/26 SEIKO EPSON CORPORATION 2006. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in


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    PDF S1D13771 S5U13771B00B X82A-G-001-01 X82A-G-001-00 CC0402KRX7R9BB102 yageo R68 choke C210-C215 R118-R122 AA19 smd diode SMD capacitor aa4 aa5 C216-C221 smd diode u1j sot23-5 SMD CODE E5 c225 diode smd

    c225 diode smd

    Abstract: SMD C236 DIODE SB950 Diode 1_b SMD diode C237 Crystek CVHD TSF153F c225 capacitor smd smd schottky diode c148 C241-C243
    Text: National Semiconductor RD-179 High Speed Signal Path Applications October 8, 2009 1.0 Design Description 2.0 Features The SP16160CH1RB demonstrates a high-IF sampling receiver subsystem that provides signal amplification, digitization and clocking as used in wireless infrastructure systems.


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    PDF RD-179 SP16160CH1RB ADC16DV160 LMH6517 LMK04031B CSP-9-111S2) CSP-9-111S2. c225 diode smd SMD C236 DIODE SB950 Diode 1_b SMD diode C237 Crystek CVHD TSF153F c225 capacitor smd smd schottky diode c148 C241-C243

    d331 npn transistor

    Abstract: pin configuration NPN transistor c458 transistor C458 D331 transistor D330 NPN transistor d331 npn transistor pin configuration smd diode D450 c458 NPN transistor smd diode D451 transistor D450
    Text: Application Report SLEA055 - JUNE 2006 TAS5508-5142K7EVM Application Report Jonas Svendsen, Tomas Bruunshuus Digital Audio & Video Products The TAS5508-5142K7EVM PurePath Digital customer evaluation module demonstrates the integrated circuits, TAS5508BPAG and TAS5142DKD, from Texas Instruments TI .


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    PDF SLEA055 TAS5508-5142K7EVM TAS5508BPAG TAS5142DKD, 32-bit 24-bit 48-bit TIC-HSINK-015 d331 npn transistor pin configuration NPN transistor c458 transistor C458 D331 transistor D330 NPN transistor d331 npn transistor pin configuration smd diode D450 c458 NPN transistor smd diode D451 transistor D450

    transistor C458

    Abstract: d331 npn transistor pin configuration d331 npn transistor pin configuration NPN transistor c458 C458 datasheet c337 pnp transistor D331 PNP c458 NPN transistor smd diode D451 capacitor 100nf 50v 0805 datasheet
    Text: Application Report SLEA061 – JUNE 2006 TAS5518-5152K8EVM Application Report Tomas Bruunshuus, Kim N. Madsen . Digital Audio and Video Products ABSTRACT The TAS5518-5152K8EVM PurePath Digital customer evaluation module


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    PDF SLEA061 TAS5518-5152K8EVM TAS5518PAG TAS5152DKD, 32-bit 24-bit 48-bit transistor C458 d331 npn transistor pin configuration d331 npn transistor pin configuration NPN transistor c458 C458 datasheet c337 pnp transistor D331 PNP c458 NPN transistor smd diode D451 capacitor 100nf 50v 0805 datasheet

    L1312

    Abstract: transistor c114 esh DIODE C921 UA78M12
    Text: User's Guide SLAU230A – September 2007 – Revised October 2007 TAS5162DDV6EVM This user's guide describes the operation of the evaluation module for the TAS5162 Digital Amplifier Power Output Stage using the TAS5086 Digital Audio PWM Processor from Texas Instruments. The


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    PDF SLAU230A TAS5162DDV6EVM TAS5162 TAS5086 L1312 transistor c114 esh DIODE C921 UA78M12

    transistor c114 esh

    Abstract: transistor c913 transistor c915 C144 Audio Frequency Amplifier Transistor High transistor BC 548 Data 470r m3 J102 J103 NPN/transistor c114 esh TAS5086
    Text: User's Guide SLLU096A – February 2007 – Revised March 2007 TAS5132DDV6EVM This user’s guide describes the operation of the evaluation module for the TAS5132 Digital Amplifier Power Output Stage using the TAS5086 Digital Audio PWM Processor from Texas Instruments. The document also provides measurement data and design


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    PDF SLLU096A TAS5132DDV6EVM TAS5132 TAS5086 transistor c114 esh transistor c913 transistor c915 C144 Audio Frequency Amplifier Transistor High transistor BC 548 Data 470r m3 J102 J103 NPN/transistor c114 esh

    88SA8052

    Abstract: JMH330 marvell 88SA8052 SLG8SP513VTR RTL8103EL RT8206 UP6111AQDD 88SE8040 ICS9LPRS365BKLFT quanta
    Text: 5 4 3 2 1 CPU FSB 133MHz ZA3 PCB STACK UP SCH FSB (133MHz) ZA3(11.6") Block Diagram LAYER 1 : TOP SCH PCIE (100MHz) SCH DA (96MHz) LAYER 2 : GND D CLOCK GEN CK505 (SLG8SP513VTR ,ICS9LPRS365BKLFT) SCH DB (100MHz) LAYER 3 : IN1 Intel@Atom(Silverthorne) LAYER 4 : IN2


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    PDF 133MHz) Z520/Z530 100MHz) 96MHz) CLK14 31818MHz) 88SA8052 JMH330 marvell 88SA8052 SLG8SP513VTR RTL8103EL RT8206 UP6111AQDD 88SE8040 ICS9LPRS365BKLFT quanta

    sfh817a

    Abstract: 1n4007 sod123 D217 OPTO NCP1397 RECTIFIER DIODE D100 diode zd201 opto d206 NCP1252 zener diode 1206 6v8 schematic diagram lcd tv sharp inverter
    Text: TND401/D Rev. 2, September 2010 300 W High Performance SLIM LCD TV Power Solution Jean-Paul Louvel LCD TV System Applications 2010 ON Semiconductor Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated


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    PDF TND401/D 680uH EFD30 NCP1052P44G TP207ST PH9080NL sfh817a 1n4007 sod123 D217 OPTO NCP1397 RECTIFIER DIODE D100 diode zd201 opto d206 NCP1252 zener diode 1206 6v8 schematic diagram lcd tv sharp inverter

    88E1119R

    Abstract: 88E1119 smd transistor M21 AA7 smd diode w18 smd transistor smd transistor F21 w21 transistor smd SOT W17 SMD transistor MT41J64M16JT-15E SMD Transistor Y13
    Text:  LatticeECP3 Versa Evaluation Board User’s Guide August 2012 Revision: EB62_01.5  LatticeECP3 Versa Evaluation Board User’s Guide Introduction The LatticeECP3 Versa Evaluation Board allows designers to investigate and experiment with the features of the


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    PDF 25MHz HDR40 ATS120SM-1 HC-49/US-SM 25MHZ 1K-0402SMT 20K-0402SMT 100PF-0402SMT 3UF-10V-0805SMT HC49US-25 88E1119R 88E1119 smd transistor M21 AA7 smd diode w18 smd transistor smd transistor F21 w21 transistor smd SOT W17 SMD transistor MT41J64M16JT-15E SMD Transistor Y13

    88E1119R

    Abstract: 88E1119 AA7 smd diode smd transistor M21 LFE3-35E-FN484CES MT41J64M16JT-15E smd transistor w18 W17 smd package transistor w18 smd transistor SMD Transistor Y13
    Text:  LatticeECP3 Versa Evaluation Board User’s Guide February 2012 Revision: EB62_01.4  LatticeECP3 Versa Evaluation Board User’s Guide Introduction The LatticeECP3 Versa Evaluation Board allows designers to investigate and experiment with the features of the


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    PDF HC49US-25 000MABJUB HC49/US 1K-0402SMT ERJ-2RKF3012X 1/10W 20K-0402SMT ERJ-2RKF2002X 100PF-0402SMT 88E1119R 88E1119 AA7 smd diode smd transistor M21 LFE3-35E-FN484CES MT41J64M16JT-15E smd transistor w18 W17 smd package transistor w18 smd transistor SMD Transistor Y13

    IRPP460

    Abstract: diode C237
    Text: M e gaM O S Power M O SFET IRFP460 VD S S = 500 V D cont p D S(on) = 20 A = 0.27 f l N-Channel Enhancement Mode, HDM OS™ Family Symbol Test Conditions Maximum Ratings VOSS Tj = 25°C to 150°C 500 V V», Tj = 25°C to 150°C; R os = 1 M£2 500 V VGs


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    PDF IRFP460 O-247 C2-37 IRPP460 diode C237

    sef520

    Abstract: diode C238 sgsp311 sef522 SEF521 SG 2058
    Text: S G S-THOMSON 0 7 E D ; 73C 17514 7 7 *3 1 r ii. . SEF520 '•J SEF521 V SEF522 SEF523 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.


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    PDF SEF520 SEF521 SEF522 SEF523 SEF520 SEF523 SEF522/SEF523 SGSP311 diode C238 SG 2058

    diode c237

    Abstract: diode C238 C237 diode
    Text: P D - 9 .1 2 6 2 D International IO R Rectifier IRF7603 H E X F E T Pow er M O S F E T • Generation V Technology • Ultra Low On-Resistance • N-Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape and Reel • Fast Switching


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    PDF IRF7603 C-239 C-240 diode c237 diode C238 C237 diode

    IRF624

    Abstract: No abstract text available
    Text: H E 0 I 4 ÖS S 4 S 2 0G0ÜMÖL T-39-11 0 | Data Sheet No. PD-9.472A INTERNATIONAL RECTIFIER IOR INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG2 4 IRF6 S 5 IM-CHAIMNEI. 250 Volt, 1.1 Ohm HEXFET T0-220AB Plastic Package The HEXFET technology is the key to International Rec­


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    PDF T-39-11 T0-220AB C-239 IRF624, IRF625 C-240 IRF624

    D 7176.1

    Abstract: TA 7176 IC M74HC237M1R LC11810 M54HC237 M54HC237F1R M74HC237 M74HC237B1R M74HC237C1R 74ls237
    Text: r z 7 SC S-TH O M SO N Ä T # Mûitë&itgfliMOeS M54HC237 M74HC237 3 TO 8 LINE DECODER LATCH . HIGHSPEED t P D = 12 ns TYP. at Vcc = 5 V . LOW POWER DISSIPATION Icc = 4 (xA (MAX.) AT TA = 25 *C . HIGH NOISE IMMUNITY Vnih = V n il = 28 % Vcc (MIN.) • OUTPUT DRIVE CAPABILITY


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    PDF M54HC237 M74HC237 54/74LS237 M54HC237F1R M74HC237M1R M74HC237B1R M74HC237C1R M54/74HC237 M54/M74HC237 D 7176.1 TA 7176 IC LC11810 M54HC237 M74HC237 M74HC237C1R 74ls237