bav99w A7S
Abstract: BAV99W VSO05561
Text: BAV99W Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV99W
VSO05561
EHA07181
OT323
Aug-20-2001
EHB00078
EHB00075
bav99w A7S
BAV99W
VSO05561
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Marking a1s
Abstract: BAW56W VSO05561
Text: BAW56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type BAW56W Marking A1s 1 = C1 Pin Configuration 2 = C2 3 = A1/A2 Package SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAW56W
VSO05561
EHA07187
OT323
Jun-29-2001
EHB00093
EHB00090
Marking a1s
BAW56W
VSO05561
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Pin diode G4S
Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Text: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181
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BAR63.
BAR63-04W
BAR63-05W
BAR63-06W
VSO05561
EHA07181
EHA07179
EHA07187
Pin diode G4S
BAR63-04W
BAR63-05W
BAR63
BAR63-06W
VSO05561
diode C2
marking c2 diode
diode MARKING A1
marking G5s
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VSO05561
Abstract: A7s marking diode
Text: BAV 99W Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV 99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT-323 Maximum Ratings Parameter Symbol
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Original
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PDF
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VSO05561
EHA07181
OT-323
Oct-08-1999
EHB00078
EHB00075
VSO05561
A7s marking diode
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VSO05561
Abstract: No abstract text available
Text: BAW 56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type Marking BAW 56W A1s Pin Configuration 1 = C1 2 = C2 Package 3 = A1/A2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage
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Original
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PDF
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VSO05561
EHA07187
OT-323
Oct-08-1999
EHB00093
EHB00090
VSO05561
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Pin diode G4S
Abstract: VSO05561
Text: BAR 63 . W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W C1/A2 3 BAR 63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1
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3-04W
3-05W
3-06W
VSO05561
EHA07181
EHA07179
EHA07187
OT-323
Pin diode G4S
VSO05561
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BAV70W
Abstract: VSO05561 10TSV
Text: BAV70W Silicon Switching Diode Array 3 For high-speed switching applications Common cathode 2 C1/C2 3 1 1 2 A1 A2 VSO05561 EHA07179 Type Marking BAV70W A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV70W
VSO05561
EHA07179
OT323
Jul-06-2001
EHB00068
EHB00065
BAV70W
VSO05561
10TSV
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A1030 transistor
Abstract: Q62702-A1030 marking code a4s
Text: BAV 70W Silicon Switching Diode Array • For high speed switching applications • Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 = A1 Q62702-A1030 2 = A2 Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage
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Q62702-A1030
OT-323
Nov-28-1996
A1030 transistor
Q62702-A1030
marking code a4s
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BAT15-04W
Abstract: VSO05561 S8s marking
Text: BAT15-04W Silicon Schottky Diode Preliminary data 3 DBS mixer applications up to 12 GHz Low noise figure Low barrier type 2 1 VSO05561 C1/A2 3 1 2 A1 C2 EHA07181 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BAT15-04W
VSO05561
EHA07181
OT323
EHD07082
Jul-06-2001
BAT15-04W
VSO05561
S8s marking
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15-04W
Abstract: VSO05561 marking s8s 1504w
Text: BAT 15-04W Silicon Schottky Diode Preliminary data 3 • DBS mixer applications up to 12 GHz • Low noise figure • Low barrier type 2 1 VSO05561 C1/A2 3 1 2 A1 C2 EHA07181 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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5-04W
VSO05561
EHA07181
OT-323
EHD07082
Oct-07-1999
15-04W
VSO05561
marking s8s
1504w
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BBY55-05W
Abstract: CT22 CT10 VSO05561 BBY55
Text: BBY55-05W Silicon Tuning Diode 3 Excellent linearity High Q hyperabrupt tuning diode Low series inductance Designed for low tuning voltage operation 2 for VCO's in mobile communications equipment 1 Very low capacitance spread VSO05561 C1/C2 3 1 2
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BBY55-05W
VSO05561
EHA07179
OT323
Jul-12-2001
2l-12-2001
BBY55-05W
CT22
CT10
VSO05561
BBY55
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Q62702-A1031
Abstract: marking code AC sot 323 diode
Text: BAW 56W Silicon Switching Diode Array • For high speed switching applications • Common anode Type Marking Ordering Code Pin Configuration BAW 56W A1s 1 = C1 Q62702-A1031 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage
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Q62702-A1031
OT-323
Nov-28-1996
Q62702-A1031
marking code AC sot 323 diode
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Q62702-A1051
Abstract: A7S marking code A1051 Q62702A1051
Text: BAV 99W Silicon Switching Diode Array • Connected in series • For high speed switching applications Type Marking Ordering Code Pin Configuration BAV 99W A7s 1=A1 Q62702-A1051 2=C2 Package 3=C1/A2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage
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Q62702-A1051
OT-323
Apr-03-1997
Q62702-A1051
A7S marking code
A1051
Q62702A1051
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VSO05561
Abstract: diode bat 85
Text: BAT 15-05W Silicon Schottky Diode • DBS mixer applications up to 12 GHz 3 • Low noise figure • Low barrier type 2 1 VSO05561 BAT 15-05W C1/C2 3 1 2 A1 A2 EHA07179 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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5-05W
VSO05561
EHA07179
OT-323
Oct-07-1999
EHD07079
EHD07081
VSO05561
diode bat 85
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DIODE T4 A1
Abstract: diode marking T4
Text: BBY 52-05W Silicon Tuning Diode Preliminary data 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking Ordering Code Pin Configuration
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2-05W
VSO05561
EHA07179
OT-323
DIODE T4 A1
diode marking T4
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BBY53-05W
Abstract: VSO05561
Text: BBY53-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY53-05W
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BBY53-05W
VSO05561
EHA07179
OT323
Jul-02-2001
BBY53-05W
VSO05561
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VSO05561
Abstract: w1901
Text: BAV 70W Silicon Switching Diode Array 3 • For high-speed switching applications • Common cathode 2 C1/C2 3 1 1 2 A1 A2 VSO05561 EHA07179 Type Marking BAV 70W A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-323 Maximum Ratings Parameter Symbol
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PDF
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VSO05561
EHA07179
OT-323
Oct-07-1999
EHB00068
EHB00065
VSO05561
w1901
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VSO05561
Abstract: No abstract text available
Text: BBY 52-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 52-05W S2s Pin Configuration 1=A1 2=A2
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2-05W
VSO05561
EHA07179
OT-323
May-20-1999
VSO05561
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VSO05561
Abstract: BBY52-05W
Text: BBY52-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY52-05W S2s Pin Configuration 1=A1 2=A2 Package
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Original
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BBY52-05W
VSO05561
EHA07179
OT323
Jul-02-2001
VSO05561
BBY52-05W
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Untitled
Abstract: No abstract text available
Text: SIEM ENS BAV 70W Silicon Switching Diode Array • For high speed switching applications >Common cathode C1/C2 _EL n r U 1 =A1 II Pin Configuration Q62702-A1030 CM Ordering Code A4s' < Marking BAV 70W CM Type Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode
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OCR Scan
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PDF
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Q62702-A1030
OT-323
5B35bDS
BAV70W
flE35b05
012040D
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a7s diode
Abstract: bav99w diode marking 355
Text: SIEMENS BAV 99W Silicon Switching Diode Array • Connected in series • For high speed switching applications TT Type Marking Ordering Code BAV 99W A7s IF Pin Configuration Q62702-A1051 1=A1 2=A2 Package 3=C1/C2 SOT-323 Maximum Ratings per Diode Parameter
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OCR Scan
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PDF
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Q62702-A1051
OT-323
40mmm
a7s diode
bav99w
diode marking 355
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAW 56W Silicon Switching Diode Array • For high speed switching applications • Common anode num m Type Marking Ordering Code Pin Configuration BAW 56W A1s Q62702-A1031 1 =C1 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Symbol Parameter
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OCR Scan
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PDF
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Q62702-A1031
OT-323
H35bQS
S53Sb05
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAS 125W Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAS 125-04W BAS 125-06W A1/A2 JZL III ET Cl C2 CHMT1I
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OCR Scan
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PDF
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25-04W
25-06W
Q62702-
OT-323
25-05W
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A1S diode
Abstract: Marking code jxs JXs sot marking code a1s marking 7S marking code AC sot 323 diode diode a1s
Text: SIEMENS BAW 56W Silicon Switching Diode Array •For high speed switching applications ■Common anode k l/A i m TJ U Type Marking Ordering Code Pin Configuration BAW 56W A1s 1 = C1 Q62702-A1031 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Parameter
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OCR Scan
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PDF
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Q62702-A1031
OT-323
40mmm
A1S diode
Marking code jxs
JXs sot
marking code a1s
marking 7S
marking code AC sot 323 diode
diode a1s
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