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    OP249GSZ Analog Devices SO-8 MARKED AS \\OP249G\\ Visit Analog Devices Buy
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    Heinemann Electric Canada Co Ltd AM3R-C2-LC07DA-25-P

    Circuit Breaker - 3 Pole - 100A, 250VAC/80VDC - Series Trip - Black Handle with I/O ON/OFF Marking - 10-32 Threads 70 A Terminals.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com AM3R-C2-LC07DA-25-P
    • 1 $145.54
    • 10 $128.4
    • 100 $115.98
    • 1000 $115.98
    • 10000 $115.98
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    C2 MARK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A3100W

    Abstract: No abstract text available
    Text: European PowerSemiconductor and Electronics Company Marketing Information FF 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: European PowerSemiconductor and Electronics Company Marketing Information FF 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: European PowerSemiconductor and Electronics Company Marketing Information FF 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1


    Original     		PDF

    W001

    Abstract: No abstract text available
    Text: European PowerSemiconductor and Electronics Company Marketing Information FF 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: European PowerSemiconductor and Electronics Company Marketing Information FF 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: European PowerSemiconductor and Electronics Company Marketing Information FF 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1


    Original     		PDF

    POWERSEM

    Abstract: No abstract text available
    Text: European PowerSemiconductor and Electronics Company Marketing Information FF 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: European PowerSemiconductor and Electronics Company Marketing Information FF 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1


    Original     		PDF

    FFB3904

    Abstract: 1N916 FMB3904 MMPQ3904 SC70-6 SOIC-16
    Text: FMB3904 FFB3904 E2 MMPQ3904 C2 B2 E1 C1 C1 E1 C2 B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 SC70-6 SuperSOT-6 Mark: .1A Mark: .1A C1 SOIC-16 C2 C1 C3 C2 C4 C4 C3 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch.


    Original     		PDF FMB3904 FFB3904 MMPQ3904 SC70-6 SOIC-16 1N916 FFB3904 FMB3904 1N916 MMPQ3904 SC70-6 SOIC-16

    FFB2222A

    Abstract: FMB2222A MMPQ2222A SC70-6 SOIC-16 C150F
    Text: FMB2222A FFB2222A E2 MMPQ2222A C2 B2 E1 C1 C1 E1 C2 B1 B2 E3 E4 B4 B2 B1 pin #1 E2 B3 E2 E1 pin #1 B1 SC70-6 SuperSOT-6 Mark: .1P Mark: .1P C1 SOIC-16 C2 C1 C3 C2 C4 C4 C3 NPN Multi-Chip General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector


    Original     		PDF FMB2222A FFB2222A MMPQ2222A SC70-6 SOIC-16 FFB2222A FMB2222A 200ns MMPQ2222A SC70-6 SOIC-16 C150F

    KF412

    Abstract: No abstract text available
    Text: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values


    Original     		PDF

    FFB2907A

    Abstract: FMB2907A FMBT2907A MMPQ2907A SC70-6 SOIC-16
    Text: FMB2907A FFB2907A E2 MMPQ2907A C2 B2 E1 C1 C1 E1 C2 B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 SC70-6 SuperSOT-6 Mark: .2F Mark: .2F C1 SOIC-16 C2 C1 C3 C2 C4 C4 C3 PNP Multi-Chip General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring


    Original     		PDF FMB2907A FFB2907A MMPQ2907A SC70-6 SOIC-16 FFB2907A FMBT2907A 200ns FMB2907A MMPQ2907A SC70-6 SOIC-16

    IC1500

    Abstract: No abstract text available
    Text: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values


    Original     		PDF

    FF 150 R 1200 kf igbt

    Abstract: No abstract text available
    Text: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values


    Original     		PDF

    IGBT FF 300 r12

    Abstract: FF400R12KF4
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2


    Original     		PDF A15/97 IGBT FF 300 r12 FF400R12KF4

    Untitled

    Abstract: No abstract text available
    Text: APTGF180DU60TG Dual common source NPT IGBT Power Module VCES = 600V IC = 180A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 C1 Q1 Q2 G1 G2 E1 E2 E NT C1 NT C2 G2 C2 E2 C1 C2 E E1 E2 NTC2 G1


    Original     		PDF APTGF180DU60TG

    FF600R12KF4

    Abstract: FF 150 R 1200 kf igbt IC600A
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 600 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2


    Original     		PDF A13/97 FF600R12KF4 FF 150 R 1200 kf igbt IC600A

    Untitled

    Abstract: No abstract text available
    Text: APTGF50DU120TG Dual common source NPT IGBT Power Module VCES = 1200V IC = 50A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 C1 Q1 Q2 G1 G2 E1 E2 E NT C1 NT C2 G2 E2 C1 E C2 C2 E1 E2 NTC2 G1


    Original     		PDF APTGF50DU120TG

    IGBT FF 300 r12

    Abstract: FF400R12KF4
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2


    Original     		PDF A15/97 IGBT FF 300 r12 FF400R12KF4

    FD600

    Abstract: 2m811
    Text: European PowerSemiconductor and Electronics Company Marketing Information FD 600 / 1200 R 17 KF6 55,2 M8 11,85 screwing depth max. 16 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 C2 16 18 53 G2 44 2,5 deep 57 E1 C2 C1 E2 E1


    Original     		PDF

    G1 TRANSISTOR

    Abstract: FF 150 R 1200 kf igbt FF600R12KF4 Transistor g1 IGBT 600V 600A JE 800 transistor
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 600 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2


    Original     		PDF A13/97 FF600R12KF4 G1 TRANSISTOR FF 150 R 1200 kf igbt FF600R12KF4 Transistor g1 IGBT 600V 600A JE 800 transistor

    FF600R12KF4

    Abstract: igbt ff 75 r
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 600 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2


    Original     		PDF A13/97 FF600R12KF4 igbt ff 75 r

    IGBT FF 300 r12

    Abstract: FF400R12KF4
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2


    Original     		PDF A15/97 IGBT FF 300 r12 FF400R12KF4