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    C1685 TRANSISTOR Search Results

    C1685 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C1685 TRANSISTOR Datasheets Context Search

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    C1685 transistor

    Abstract: transistor c1684 TRANSISTOR C1685 C1684 transistor C1685 R transistor an c1685 transistor transistor c1684 NPN C2079 optocoupler H11A1 C1682 transistor
    Text: E ö TRANSISTOR OUTPUT OPTOCOUPLER OPTOELECTRONICS H11A1 DESCRIPTION PACKAGE DIMENSIONS •The H11A1 is a phototransistor-type optically coupled isolator. An infrared èmitting diode manufactured from specially grown gallium arsenide is selectively coupled


    OCR Scan     		PDF H11A1 C2079 E90700 C1683 C1684 C1685 C1296A C1294 C1685 transistor transistor c1684 TRANSISTOR C1685 C1684 transistor C1685 R transistor an c1685 transistor transistor c1684 NPN optocoupler H11A1 C1682 transistor

    Untitled

    Abstract: No abstract text available
    Text: E O TRANSISTOR OUTPUT OPTOCOUPLER OPTOELECTRONICS H11A1 DESCRIPTION PACKAGE DIMENSIONS 1 The H11A1 is a phototransistor-type optically coupled isolator. An infrared em itting diode m anufactured from specially grown gallium arsenide is selectively coupled


    OCR Scan     		PDF H11A1 H11A1 E90700 C1684 C1683 C1296A C1685 C1294

    C1685 transistor

    Abstract: C1685 R transistor H11A1Z transistor c1684 TRANSISTOR C1685 transistor c2090 C1685 C1682 transistor
    Text: QUALITY TECHNOLOGIES VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z T The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor in a standard plastic


    OCR Scan     		PDF H11A1 H11A1Z E50151 C2090 C1683 C1684 C1685 C1296A C1685 transistor C1685 R transistor H11A1Z transistor c1684 TRANSISTOR C1685 transistor c2090 C1685 C1682 transistor

    transistor c1684

    Abstract: C1685 R transistor optocoupler H11A1 C1685 transistor TRANSISTOR C1685 C1685 C1684 transistor C1661
    Text: TRANSISTOR OUTPUT OPTOCOUPLER PTOELECIRDNICS H11A1 DESCRIPTION PACKAGE DIMENSIONS t ~ r~ J-3 6-86 MAX 6.10 w J ' 03 J_ if f g j 8.89 _ 8.38 _ 0.2 a T - The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from


    OCR Scan     		PDF H11A1 H11A1 E90700 C1683 C1684 C1685 C1296A transistor c1684 C1685 R transistor optocoupler H11A1 C1685 transistor TRANSISTOR C1685 C1684 transistor C1661

    C1685

    Abstract: C1685 transistor C1681 NPN C1685 TRANSISTOR C1685 transistor c1684 C1684 C1684 transistor C1685 R transistor C1683
    Text: PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL 111 PACKAGE DIMENSIONS t r if I J_ max o w ® ^ . 8.89 8.38 J typ L ~ 1 r _ DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled


    OCR Scan     		PDF TIL111 ST1603A TIL111 E90700 C2079 C1682 C1684 C1296A C1683 C1685 C1685 C1685 transistor C1681 NPN C1685 TRANSISTOR C1685 transistor c1684 C1684 C1684 transistor C1685 R transistor C1683

    C1685

    Abstract: C1685 transistor transistor c1684 smd TRANSISTOR 27e an c1685 transistor SMD Transistor 1c C1636 C1685 R transistor C1681 C1296A
    Text: ÖUALITY TECHNOLOGIES CORP B7E D QUALITY TECHNOLOGIES • 74bbflSl 0GQ3577 DUAL PHOTOTRANSISTOR OPTOCOUPLERS MCT6 MCT62 MCT61 MCT66 T -4 1 -8 3 DESCRIPTION PACKAGE DIMENSIONS The MCT6X optoisoiators have two channels for high density applications. For four channel applications,


    OCR Scan     		PDF 74bbflSl 0GQ3577 MCT62 MCT61 MCT66 16-pin C2091 MCT9001 C1685 C1685 transistor transistor c1684 smd TRANSISTOR 27e an c1685 transistor SMD Transistor 1c C1636 C1685 R transistor C1681 C1296A

    Untitled

    Abstract: No abstract text available
    Text: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 1 CNY17F-1 CNY17F-2 CNY17F-3 PACKAGE DIMENSIONS DESCRIPTION db Æ db The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. FEATURES W W W 8.89 8 .3 8 High isolation voltage 5300 VAC RMS— 1 minute


    OCR Scan     		PDF CNY17F-1 CNY17F-2 CNY17F-3 CNY17 CNY17F1: CNY17F2: CNY17F3: E90700 ST1603A C1680

    C1679

    Abstract: C1680 C2079 MCT2200 MCT2201 MCT2202 C1682 transistor NPN C1685 C1685 transistor transistor c1684 NPN
    Text: tsO PHOTOTRANSISTOR OPTOCOUPLERS OPTOELEETBöHStS MCT2200 MCT2201 MCT2202 PACKAGE DIMENSIONS DESCRIPTION The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide infrared emitting diode is selectively coupled with an NPN


    OCR Scan     		PDF MCT2200 MCT2201 MCT2202 l2-54! C2079 STI603A MCT2200, E90700 C1679 C1680 C1682 transistor NPN C1685 C1685 transistor transistor c1684 NPN

    Untitled

    Abstract: No abstract text available
    Text: DUAL PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT9001 PACKAGE DIMENSIONS D ESCRIPTIO N The MCT9001 is a tw o channel optocoupler in a standard, end stackable, 8 pin dual-in-line package, This part offers the same packing density as 4 pin optocouplers, while m inim izing co m ponent count and


    OCR Scan     		PDF MCT9001 MCT9001 E50151 C1680 C1685 C1294

    CHY17

    Abstract: CNY17-3 cny17 CHY17-1 CHY17-3 CHY17-2 NY17-3 CNY17 pulse circuit cny17-2 ny17
    Text: E O PHOTOTRANSISTOR OPTOCOUPLERS GPTOELECÏRDNICS II CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE db r& The CNY17 series consists of a Gallium Arsenide I RED coupled with an NPN phototransistor. rifa FEATUM S High isolation voltage 5300 VAC RMS— 1 m inute 7500 VAC PEAK— 1 m inute


    OCR Scan     		PDF CNY17-1 CNY17-3 CNY17-2 CNY17-4 CNY17 CNY17-1: CNY17-2: CNY17-3: CNY17-4: E90700 CHY17 CHY17-1 CHY17-3 CHY17-2 NY17-3 CNY17 pulse circuit ny17

    C1684 r

    Abstract: C1684R C1680 C1685 R transistor
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT274 PACKAGE DIMENSIONS The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN high-gain silicon phototransistor. r ~


    OCR Scan     		PDF MCT274 MCT274 E50151 C2090 C1681 C1682 C1684 C1683 100/is C1685 C1684 r C1684R C1680 C1685 R transistor

    4N35 QUALITY TECHNOLOGIES

    Abstract: 4n35 equivalent C1684 r .85 transistor
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. t 6.86


    OCR Scan     		PDF E50151 TYP20 C1685 C1296A C1294 4N35 QUALITY TECHNOLOGIES 4n35 equivalent C1684 r .85 transistor

    Untitled

    Abstract: No abstract text available
    Text: I PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS MCT2200 MCT2201 MCT2202 PACKAGE DIMENSIONS DESCRIPTION The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide infrared emitting diode is selectively coupled with an NPN


    OCR Scan     		PDF MCT2200 MCT2201 MCT2202 MCT2200, MCT2201 MCT2202 E90700 C2079 C1683 C1296A

    Untitled

    Abstract: No abstract text available
    Text: su PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is


    OCR Scan     		PDF TIL111 TIL111 E90700 ST1603A C2079 74bbfi C1684 C1683 C1685 C1294

    C1681

    Abstract: transistor c1684 c1685 NPN C1685 transistor t051
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT272 PACKAGE DIMENSION! The MCT272 is a phototransistor-type optically coupled Isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r ~ 6.86 6.35


    OCR Scan     		PDF MCT272 MCT272 Ratio--75% time--10 E50151 C2090 C1683 C1684 C1294 C1681 transistor c1684 c1685 NPN C1685 transistor t051

    transistor C2075

    Abstract: g10 smd transistor SMD Transistor 1c
    Text: âUALITY TEC HN OLO GIES CORP QUALITY TECHNOLOGIES 27E D 74bbasi 0003443 VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from


    OCR Scan     		PDF 74bbasi H11A1 H11A1Z H11A1 E50151 MCT9001 transistor C2075 g10 smd transistor SMD Transistor 1c

    sx3704

    Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
    Text: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are


    OCR Scan     		PDF ircD376 BD234 VT854, VT855â VT854* iTT44, BZX79-C24, BZX83-C24, BZX88-C24 sx3704 BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram

    GNY17-3

    Abstract: CNV17 NPN C1685 c1685 C1685 npn GNY17 C1684 C1685 transistor CNY17-2 C1243
    Text: [«51 PHOTOTRANSISTOR OPTOCOUPLERS OPTOE L E CTRONI CS CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE DIMENSIONS DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. rib rih rSi FEATURES 1.9 TYP ~ ï— 4.06 J twLTI


    OCR Scan     		PDF CNY17-1 CNY17-3 CNY17-2 CNY17-4 ST1603A C2079 CNY17 CNY17-1: CNY17-2: CNY17-3: GNY17-3 CNV17 NPN C1685 c1685 C1685 npn GNY17 C1684 C1685 transistor C1243

    transistor c1684

    Abstract: C1685 transistor C1685 R transistor C1681 TIL111 TRANSISTOR C1685 C1684 transistor C1685 npn
    Text: PHOTOTRANSISTOR OPTOISOLATOR OPTDELECIRDIIICS TIL111 DESCRIPTION PACKAGE DIMENSIONS db The TIL111 is a phototransistor-type optically coupled isolator. An infrared em itting dio d e m anufactured from specially grow n gallium arsenide is selectively coupled


    OCR Scan     		PDF TIL111 TIL111 C2079 C1681 C1683 C1684 C1685 C1296A C1294 transistor c1684 C1685 transistor C1685 R transistor C1681 TRANSISTOR C1685 C1684 transistor C1685 npn

    CNY17 pulse circuit

    Abstract: C1685 transistor transistor c1684 opt 300 cny17-3 NPN C1685 c1685 CNY17-2 equivalent transistor C1681 cny171 11
    Text: s o PHOTOTRANSISTOR OPTOCOUPLERS M TK LEtm iltS CNY17-1 CNY17-3 CNY17-2 CNY17-4 DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. r& rfh dfe FEATURES High isolation voltage 5300 VAC RMS— 1 minute


    OCR Scan     		PDF CNY17-1 CNY17-3 CNY17-2 CNY17-4 CNY17 STI603A C2D79 CNY17-1: CNY17-2: CNY17-3; CNY17 pulse circuit C1685 transistor transistor c1684 opt 300 cny17-3 NPN C1685 c1685 equivalent transistor C1681 cny171 11

    M0C8113

    Abstract: OC8112 M0C8111 OC811 m0c8112
    Text: E PHOTOTRANSISTOR OPTOCOUPLERS U OPTOELECTRONICS MOC8111 MOC8112 MOC8113 PACKAGE DIMENSIONS DESCRIPTION db Æ Æ The MOC series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Î “ « t I l 03 I V c p _ g ì 8.89 8.38 ~ -J _ 2.3;


    OCR Scan     		PDF MOC8111 MOC8112 MOC8113 MOC8111: MOC8112: MOC8113: E90700 I2-54! HT111 M0C8113 OC8112 M0C8111 OC811 m0c8112

    C1684 r .85 transistor

    Abstract: transistor c1684
    Text: mm QUALITY PHOTOTRANSISTOR OPTOCOUPLER • [ te c h n o lo g ie s MCT275 DESCRIPTION The M CT275 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with a high voltage NPN silicon phototransistor.


    OCR Scan     		PDF MCT275 MCT275 E50151 C1683 C1684 C1685 C1284 C1296A C1684 r .85 transistor transistor c1684

    4N25 APPLICATION NOTE

    Abstract: 4N25 RFT 100k
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS 1 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS ffc rft cii The 4N25, 4N26, 4N27, and 4N28 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide diode. WWW FEATURES & APPLICATION!


    OCR Scan     		PDF E50151 C1685 C1296A C1294 4N25 APPLICATION NOTE 4N25 RFT 100k

    C1680

    Abstract: C1685 ci684 C1685 npn optocoupler 1123 C1243 C1679 C1681 C1682 C1683
    Text: £ PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS V y A ^ / V ' v ' V v 'v v ^ // MCT2 DESCRIPTION PACKAGE DIMENSIONS ” t o I $ T ~ J S FEATURES & APPLICATIONS I ® 8.89 _ 8.38 ~ The MCT2 is a NPN silicon planar phototransistor 1optically coupled to a gallium arsenide infrared emitting


    OCR Scan     		PDF c2079 E90700 C1296A 100MS C1680 C1685 ci684 C1685 npn optocoupler 1123 C1243 C1679 C1681 C1682 C1683