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    C1685 NPN Search Results

    C1685 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    C1685 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 1 CNY17F-1 CNY17F-2 CNY17F-3 PACKAGE DIMENSIONS DESCRIPTION db Æ db The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. FEATURES W W W 8.89 8 .3 8 High isolation voltage 5300 VAC RMS— 1 minute


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    CNY17F-1 CNY17F-2 CNY17F-3 CNY17 CNY17F1: CNY17F2: CNY17F3: E90700 ST1603A C1680 PDF

    C1679

    Abstract: C1680 C2079 MCT2200 MCT2201 MCT2202 C1682 transistor NPN C1685 C1685 transistor transistor c1684 NPN
    Text: tsO PHOTOTRANSISTOR OPTOCOUPLERS OPTOELEETBöHStS MCT2200 MCT2201 MCT2202 PACKAGE DIMENSIONS DESCRIPTION The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide infrared emitting diode is selectively coupled with an NPN


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    MCT2200 MCT2201 MCT2202 l2-54! C2079 STI603A MCT2200, E90700 C1679 C1680 C1682 transistor NPN C1685 C1685 transistor transistor c1684 NPN PDF

    CHY17

    Abstract: CNY17-3 cny17 CHY17-1 CHY17-3 CHY17-2 NY17-3 CNY17 pulse circuit cny17-2 ny17
    Text: E O PHOTOTRANSISTOR OPTOCOUPLERS GPTOELECÏRDNICS II CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE db r& The CNY17 series consists of a Gallium Arsenide I RED coupled with an NPN phototransistor. rifa FEATUM S High isolation voltage 5300 VAC RMS— 1 m inute 7500 VAC PEAK— 1 m inute


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    CNY17-1 CNY17-3 CNY17-2 CNY17-4 CNY17 CNY17-1: CNY17-2: CNY17-3: CNY17-4: E90700 CHY17 CHY17-1 CHY17-3 CHY17-2 NY17-3 CNY17 pulse circuit ny17 PDF

    C1684 r

    Abstract: C1684R C1680 C1685 R transistor
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT274 PACKAGE DIMENSIONS The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN high-gain silicon phototransistor. r ~


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    MCT274 MCT274 E50151 C2090 C1681 C1682 C1684 C1683 100/is C1685 C1684 r C1684R C1680 C1685 R transistor PDF

    4N35 QUALITY TECHNOLOGIES

    Abstract: 4n35 equivalent C1684 r .85 transistor
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. t 6.86


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    E50151 TYP20 C1685 C1296A C1294 4N35 QUALITY TECHNOLOGIES 4n35 equivalent C1684 r .85 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: I PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS MCT2200 MCT2201 MCT2202 PACKAGE DIMENSIONS DESCRIPTION The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide infrared emitting diode is selectively coupled with an NPN


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    MCT2200 MCT2201 MCT2202 MCT2200, MCT2201 MCT2202 E90700 C2079 C1683 C1296A PDF

    Untitled

    Abstract: No abstract text available
    Text: su PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is


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    TIL111 TIL111 E90700 ST1603A C2079 74bbfi C1684 C1683 C1685 C1294 PDF

    C1681

    Abstract: transistor c1684 c1685 NPN C1685 transistor t051
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT272 PACKAGE DIMENSION! The MCT272 is a phototransistor-type optically coupled Isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r ~ 6.86 6.35


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    MCT272 MCT272 Ratio--75% time--10 E50151 C2090 C1683 C1684 C1294 C1681 transistor c1684 c1685 NPN C1685 transistor t051 PDF

    GNY17-3

    Abstract: CNV17 NPN C1685 c1685 C1685 npn GNY17 C1684 C1685 transistor CNY17-2 C1243
    Text: [«51 PHOTOTRANSISTOR OPTOCOUPLERS OPTOE L E CTRONI CS CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE DIMENSIONS DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. rib rih rSi FEATURES 1.9 TYP ~ ï— 4.06 J twLTI


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    CNY17-1 CNY17-3 CNY17-2 CNY17-4 ST1603A C2079 CNY17 CNY17-1: CNY17-2: CNY17-3: GNY17-3 CNV17 NPN C1685 c1685 C1685 npn GNY17 C1684 C1685 transistor C1243 PDF

    CNY17 pulse circuit

    Abstract: C1685 transistor transistor c1684 opt 300 cny17-3 NPN C1685 c1685 CNY17-2 equivalent transistor C1681 cny171 11
    Text: s o PHOTOTRANSISTOR OPTOCOUPLERS M TK LEtm iltS CNY17-1 CNY17-3 CNY17-2 CNY17-4 DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. r& rfh dfe FEATURES High isolation voltage 5300 VAC RMS— 1 minute


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    CNY17-1 CNY17-3 CNY17-2 CNY17-4 CNY17 STI603A C2D79 CNY17-1: CNY17-2: CNY17-3; CNY17 pulse circuit C1685 transistor transistor c1684 opt 300 cny17-3 NPN C1685 c1685 equivalent transistor C1681 cny171 11 PDF

    M0C8113

    Abstract: OC8112 M0C8111 OC811 m0c8112
    Text: E PHOTOTRANSISTOR OPTOCOUPLERS U OPTOELECTRONICS MOC8111 MOC8112 MOC8113 PACKAGE DIMENSIONS DESCRIPTION db Æ Æ The MOC series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Î “ « t I l 03 I V c p _ g ì 8.89 8.38 ~ -J _ 2.3;


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    MOC8111 MOC8112 MOC8113 MOC8111: MOC8112: MOC8113: E90700 I2-54! HT111 M0C8113 OC8112 M0C8111 OC811 m0c8112 PDF

    C1684 r .85 transistor

    Abstract: transistor c1684
    Text: mm QUALITY PHOTOTRANSISTOR OPTOCOUPLER • [ te c h n o lo g ie s MCT275 DESCRIPTION The M CT275 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with a high voltage NPN silicon phototransistor.


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    MCT275 MCT275 E50151 C1683 C1684 C1685 C1284 C1296A C1684 r .85 transistor transistor c1684 PDF

    4N25 APPLICATION NOTE

    Abstract: 4N25 RFT 100k
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS 1 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS ffc rft cii The 4N25, 4N26, 4N27, and 4N28 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide diode. WWW FEATURES & APPLICATION!


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    E50151 C1685 C1296A C1294 4N25 APPLICATION NOTE 4N25 RFT 100k PDF

    C1680

    Abstract: C1685 ci684 C1685 npn optocoupler 1123 C1243 C1679 C1681 C1682 C1683
    Text: £ PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS V y A ^ / V ' v ' V v 'v v ^ // MCT2 DESCRIPTION PACKAGE DIMENSIONS ” t o I $ T ~ J S FEATURES & APPLICATIONS I ® 8.89 _ 8.38 ~ The MCT2 is a NPN silicon planar phototransistor 1optically coupled to a gallium arsenide infrared emitting


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    c2079 E90700 C1296A 100MS C1680 C1685 ci684 C1685 npn optocoupler 1123 C1243 C1679 C1681 C1682 C1683 PDF

    C1684 r .85 transistor

    Abstract: 100JjA optocouplers 4n35 25CC 4N35 4N36 4N37 C1684 transistor transistor c1684
    Text: PHOTOTRANSISTOR OPTOCOUPLERS 0FT8ELECTB0HICS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS “T h e 4N 35,4N 36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS


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    ST1603A C2Q79 E90700 hu1685 C1296A C1S94 VCEat10 C1684 r .85 transistor 100JjA optocouplers 4n35 25CC 4N35 4N36 4N37 C1684 transistor transistor c1684 PDF

    transistor c1684

    Abstract: CNY17-3 CNY-17-3 c1685
    Text: QUALITY •[TECHNOLOGIES VDE APPROVED p h o t o t r a n s is t o r o p t o c o u p l e r s CNY17-1/1Z CNY17-3/3Z CNY17-2/2Z CNY17-4/4Z PACKAGE DIMENSIONS tft DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor.


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    CNY17-1/1Z CNY17-3/3Z CNY17-2/2Z CNY17-4/4Z CNY17 78TYp C2090 CNY17-1: CNY17-2: CNY17-3: transistor c1684 CNY17-3 CNY-17-3 c1685 PDF

    C1685 transistor

    Abstract: C1685 R transistor H11A1Z transistor c1684 TRANSISTOR C1685 transistor c2090 C1685 C1682 transistor
    Text: QUALITY TECHNOLOGIES VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z T The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor in a standard plastic


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    H11A1 H11A1Z E50151 C2090 C1683 C1684 C1685 C1296A C1685 transistor C1685 R transistor H11A1Z transistor c1684 TRANSISTOR C1685 transistor c2090 C1685 C1682 transistor PDF

    C1685 transistor

    Abstract: C1684 r .85 transistor C1685 transistor c1684 C1680 C1681 TRANSISTOR C1685 C1679 C1682 C1683
    Text: L y 1 • PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT2 PACKAGE DIMENSIONS DESCRIPTION The MCT2 is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS AC line/digital logic isolator


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    E90700 ST1603A C2079 C1296A c1294 C1685 transistor C1684 r .85 transistor C1685 transistor c1684 C1680 C1681 TRANSISTOR C1685 C1679 C1682 C1683 PDF

    Untitled

    Abstract: No abstract text available
    Text: BQ PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS 1 MCT2 PACKAG E DIMENSIONS DESCRIPTION The M C T 2 is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting t t diode. • a SS I Œ 8.89 8.38 “ J FEATURES & APPLICATIONS


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    ST1603A 74bbfl51 PDF

    Untitled

    Abstract: No abstract text available
    Text: G E H PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 1 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS DESCRIPTION The 4N 25 , 4N 26, 4N 27 , and 4 N 2 8 series of optocouplers ' t t H 6.86 MAX B10 w I Œ coupled to a gallium arsenide diode. _ i _ 8.89 8.38 have an NPN silicon planar phototransistor optically


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    I2-54! C1685 C1296A 74bbfl51 PDF

    Untitled

    Abstract: No abstract text available
    Text: [£Ö PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONI CS 3 CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE DIMENSION! DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. WWW High isolation voltage 5300 VAC RMS— 1 m inute


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    CNY17-1 CNY17-3 CNY17-2 CNY17-4 CNY17 CNY17-1: CNY17-2: CNY17-3: CNY17-4: E90700 PDF

    C1685

    Abstract: C1685 transistor C1681 NPN C1685 TRANSISTOR C1685 transistor c1684 C1684 C1684 transistor C1685 R transistor C1683
    Text: PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL 111 PACKAGE DIMENSIONS t r if I J_ max o w ® ^ . 8.89 8.38 J typ L ~ 1 r _ DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled


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    TIL111 ST1603A TIL111 E90700 C2079 C1682 C1684 C1296A C1683 C1685 C1685 C1685 transistor C1681 NPN C1685 TRANSISTOR C1685 transistor c1684 C1684 C1684 transistor C1685 R transistor C1683 PDF

    C1681

    Abstract: C1680 C1682 transistor C1243 C1686 MCT6 equivalent C1684 r .85 transistor C1682 MCT66 MCT66 QUALITY
    Text: QUALITY TECHNOLOGIES DUAL PHOTOTRANSISTOR OPTOCOUPLERS 1 MCT6 MCT62 MCT61 MCT66 DESCRIPTION The MCT6X optoisolators have two channels for high density applications. For four channel applications, two-packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor


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    MCT62 MCT61 MCT66 16-pin E50151 C1681 C1682 C1681 C1680 C1682 transistor C1243 C1686 MCT6 equivalent C1684 r .85 transistor C1682 MCT66 MCT66 QUALITY PDF

    NPN C1685

    Abstract: C1685 transistor
    Text: EO PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N35 4N36 4N37 PACKAGE DIMENSIONS DESCRIPTION Æ db tft The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.


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    E90700 NPN C1685 C1685 transistor PDF