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    C1684 TRANSISTOR Search Results

    C1684 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C1684 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor c1684

    Abstract: h11av2 equivalent H11AVI OPTOCOUPLER 636 H11AV3 H11AV2A H11AV3A 113t CL685
    Text: QUALITY TECHNOLOGIES TRANSISTOR OUTPUT OPTOCOUPLER H11AV1 H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A PACKAGE DIMENSIONS I G.8G 6.36 I ¥ J W The H11AV series consists of a gallium arsenide infrared emitting diode coupled with an NPN silicon phototransistor in a dual-in-line package. The H11AV1A,


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    H11AV1 H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A H11AV H11AV1A, H11AV3A transistor c1684 h11av2 equivalent H11AVI OPTOCOUPLER 636 113t CL685 PDF

    Untitled

    Abstract: No abstract text available
    Text: E O TRANSISTOR OUTPUT OPTOCOUPLER OPTOELECTRONICS H11A1 DESCRIPTION PACKAGE DIMENSIONS 1 The H11A1 is a phototransistor-type optically coupled isolator. An infrared em itting diode m anufactured from specially grown gallium arsenide is selectively coupled


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    H11A1 H11A1 E90700 C1684 C1683 C1296A C1685 C1294 PDF

    C1685 transistor

    Abstract: C1685 R transistor H11A1Z transistor c1684 TRANSISTOR C1685 transistor c2090 C1685 C1682 transistor
    Text: QUALITY TECHNOLOGIES VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z T The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor in a standard plastic


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    H11A1 H11A1Z E50151 C2090 C1683 C1684 C1685 C1296A C1685 transistor C1685 R transistor H11A1Z transistor c1684 TRANSISTOR C1685 transistor c2090 C1685 C1682 transistor PDF

    transistor c1684

    Abstract: C1685 R transistor optocoupler H11A1 C1685 transistor TRANSISTOR C1685 C1685 C1684 transistor C1661
    Text: TRANSISTOR OUTPUT OPTOCOUPLER PTOELECIRDNICS H11A1 DESCRIPTION PACKAGE DIMENSIONS t ~ r~ J-3 6-86 MAX 6.10 w J ' 03 J_ if f g j 8.89 _ 8.38 _ 0.2 a T - The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from


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    H11A1 H11A1 E90700 C1683 C1684 C1685 C1296A transistor c1684 C1685 R transistor optocoupler H11A1 C1685 transistor TRANSISTOR C1685 C1684 transistor C1661 PDF

    C1685

    Abstract: C1685 transistor transistor c1684 smd TRANSISTOR 27e an c1685 transistor SMD Transistor 1c C1636 C1685 R transistor C1681 C1296A
    Text: ÖUALITY TECHNOLOGIES CORP B7E D QUALITY TECHNOLOGIES • 74bbflSl 0GQ3577 DUAL PHOTOTRANSISTOR OPTOCOUPLERS MCT6 MCT62 MCT61 MCT66 T -4 1 -8 3 DESCRIPTION PACKAGE DIMENSIONS The MCT6X optoisoiators have two channels for high density applications. For four channel applications,


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    74bbflSl 0GQ3577 MCT62 MCT61 MCT66 16-pin C2091 MCT9001 C1685 C1685 transistor transistor c1684 smd TRANSISTOR 27e an c1685 transistor SMD Transistor 1c C1636 C1685 R transistor C1681 C1296A PDF

    C1685

    Abstract: C1685 transistor C1681 NPN C1685 TRANSISTOR C1685 transistor c1684 C1684 C1684 transistor C1685 R transistor C1683
    Text: PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL 111 PACKAGE DIMENSIONS t r if I J_ max o w ® ^ . 8.89 8.38 J typ L ~ 1 r _ DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled


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    TIL111 ST1603A TIL111 E90700 C2079 C1682 C1684 C1296A C1683 C1685 C1685 C1685 transistor C1681 NPN C1685 TRANSISTOR C1685 transistor c1684 C1684 C1684 transistor C1685 R transistor C1683 PDF

    C1679

    Abstract: C1680 C2079 MCT2200 MCT2201 MCT2202 C1682 transistor NPN C1685 C1685 transistor transistor c1684 NPN
    Text: tsO PHOTOTRANSISTOR OPTOCOUPLERS OPTOELEETBöHStS MCT2200 MCT2201 MCT2202 PACKAGE DIMENSIONS DESCRIPTION The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide infrared emitting diode is selectively coupled with an NPN


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    MCT2200 MCT2201 MCT2202 l2-54! C2079 STI603A MCT2200, E90700 C1679 C1680 C1682 transistor NPN C1685 C1685 transistor transistor c1684 NPN PDF

    Untitled

    Abstract: No abstract text available
    Text: OPTOELECTRONICS I PHOTOTRANSISTOR OPTOCOUPLER MCT271 DESCRIPTION PACKAGE DIMENSIONS db & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.


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    MCT271 MCT271 E90700 C1682 C1681 C1683 C1684 C1296A 74bbfl51 C1294 PDF

    Untitled

    Abstract: No abstract text available
    Text: su PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is


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    TIL111 TIL111 E90700 ST1603A C2079 74bbfi C1684 C1683 C1685 C1294 PDF

    C1685 transistor

    Abstract: C1685 CNYI7-3 CNYI7 transistor ac 125 equivalent TRANSISTOR C1685 C1681 CNY17 transistor c1684 CNY17-2
    Text: LSU Wf JÊÊtÈk. \H| mmH PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE DIMENSIONS DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. FEATURES WWW High isolation voltage


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    CNY17-1 CNY17-2 STI603A c2079 CNY17 CNY17-1: CNY17-2: CNY17-3: CNY17-4: C1683 C1685 transistor C1685 CNYI7-3 CNYI7 transistor ac 125 equivalent TRANSISTOR C1685 C1681 transistor c1684 PDF

    C1681

    Abstract: transistor c1684 c1685 NPN C1685 transistor t051
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT272 PACKAGE DIMENSION! The MCT272 is a phototransistor-type optically coupled Isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r ~ 6.86 6.35


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    MCT272 MCT272 Ratio--75% time--10 E50151 C2090 C1683 C1684 C1294 C1681 transistor c1684 c1685 NPN C1685 transistor t051 PDF

    transistor C2075

    Abstract: g10 smd transistor SMD Transistor 1c
    Text: âUALITY TEC HN OLO GIES CORP QUALITY TECHNOLOGIES 27E D 74bbasi 0003443 VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from


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    74bbasi H11A1 H11A1Z H11A1 E50151 MCT9001 transistor C2075 g10 smd transistor SMD Transistor 1c PDF

    Untitled

    Abstract: No abstract text available
    Text: QUALITY TECHNOLOGIES • MCT271 The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r f t tSi rSi t 6.86 ww ' 6.35 1 _ 8.89 ■ Controlled Current Transfer Ratio— 45% to 90%


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    MCT271 MCT271 C2090 E50151 C1681 C1682 C1684 C1683 C1296A C1294 PDF

    GNY17-3

    Abstract: CNV17 NPN C1685 c1685 C1685 npn GNY17 C1684 C1685 transistor CNY17-2 C1243
    Text: [«51 PHOTOTRANSISTOR OPTOCOUPLERS OPTOE L E CTRONI CS CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE DIMENSIONS DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. rib rih rSi FEATURES 1.9 TYP ~ ï— 4.06 J twLTI


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    CNY17-1 CNY17-3 CNY17-2 CNY17-4 ST1603A C2079 CNY17 CNY17-1: CNY17-2: CNY17-3: GNY17-3 CNV17 NPN C1685 c1685 C1685 npn GNY17 C1684 C1685 transistor C1243 PDF

    transistor c1684

    Abstract: C1685 transistor C1685 R transistor C1681 TIL111 TRANSISTOR C1685 C1684 transistor C1685 npn
    Text: PHOTOTRANSISTOR OPTOISOLATOR OPTDELECIRDIIICS TIL111 DESCRIPTION PACKAGE DIMENSIONS db The TIL111 is a phototransistor-type optically coupled isolator. An infrared em itting dio d e m anufactured from specially grow n gallium arsenide is selectively coupled


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    TIL111 TIL111 C2079 C1681 C1683 C1684 C1685 C1296A C1294 transistor c1684 C1685 transistor C1685 R transistor C1681 TRANSISTOR C1685 C1684 transistor C1685 npn PDF

    C1684

    Abstract: C1683 C1681 transistor c1684 C1684 transistor transistor c1682 C1296A
    Text: C sö PHOTOTRANSISTOR OPTOCOUPLER DPTDELECîHGNiCS 1 MCT271 PACKAGE DIMENSIONS DESCRIPTION The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor.


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    MCT271 MCT271 E90700 C1682 C1681 C1683 C1684 C1296A transistor c1684 C1684 transistor transistor c1682 C1296A PDF

    CNY17 pulse circuit

    Abstract: C1685 transistor transistor c1684 opt 300 cny17-3 NPN C1685 c1685 CNY17-2 equivalent transistor C1681 cny171 11
    Text: s o PHOTOTRANSISTOR OPTOCOUPLERS M TK LEtm iltS CNY17-1 CNY17-3 CNY17-2 CNY17-4 DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. r& rfh dfe FEATURES High isolation voltage 5300 VAC RMS— 1 minute


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    CNY17-1 CNY17-3 CNY17-2 CNY17-4 CNY17 STI603A C2D79 CNY17-1: CNY17-2: CNY17-3; CNY17 pulse circuit C1685 transistor transistor c1684 opt 300 cny17-3 NPN C1685 c1685 equivalent transistor C1681 cny171 11 PDF

    C1684 r .85 transistor

    Abstract: transistor c1684
    Text: mm QUALITY PHOTOTRANSISTOR OPTOCOUPLER • [ te c h n o lo g ie s MCT275 DESCRIPTION The M CT275 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with a high voltage NPN silicon phototransistor.


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    MCT275 MCT275 E50151 C1683 C1684 C1685 C1284 C1296A C1684 r .85 transistor transistor c1684 PDF

    Untitled

    Abstract: No abstract text available
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT270 PACKAGE DIMENSION! DESCRIPTION The M CT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.


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    MCT270 MCT270 2500VAC 3000VAC E50151 C2090 C1681 C1682 C1683 C1684 PDF

    CHY17

    Abstract: CNY17-3 cny17 CHY17-1 CHY17-3 CHY17-2 NY17-3 CNY17 pulse circuit cny17-2 ny17
    Text: E O PHOTOTRANSISTOR OPTOCOUPLERS GPTOELECÏRDNICS II CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE db r& The CNY17 series consists of a Gallium Arsenide I RED coupled with an NPN phototransistor. rifa FEATUM S High isolation voltage 5300 VAC RMS— 1 m inute 7500 VAC PEAK— 1 m inute


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    CNY17-1 CNY17-3 CNY17-2 CNY17-4 CNY17 CNY17-1: CNY17-2: CNY17-3: CNY17-4: E90700 CHY17 CHY17-1 CHY17-3 CHY17-2 NY17-3 CNY17 pulse circuit ny17 PDF

    C1684 r

    Abstract: C1684R C1680 C1685 R transistor
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT274 PACKAGE DIMENSIONS The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN high-gain silicon phototransistor. r ~


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    MCT274 MCT274 E50151 C2090 C1681 C1682 C1684 C1683 100/is C1685 C1684 r C1684R C1680 C1685 R transistor PDF

    C1685 R transistor

    Abstract: a38 TRANSISTOR TRANSISTOR C1685
    Text: QUALITY TECHNOLOGIES VDE a p p r o v e d 1 p h o t o t r a n s is t o r o p t o c o u p l e r s MCT2200/0Z MCT2201/1Z MCT2202/2Z 'dv e\ DESCRIPTION r 6.86 The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide infrared emitting diode is selectively coupled with an


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    MCT2200/0Z MCT2201/1Z MCT2202/2Z MCT2200, MCT2201 MCT2202 C2090 MCT2200--20 MCT2201-- C1685 R transistor a38 TRANSISTOR TRANSISTOR C1685 PDF

    C1684 r .85 transistor

    Abstract: 100JjA optocouplers 4n35 25CC 4N35 4N36 4N37 C1684 transistor transistor c1684
    Text: PHOTOTRANSISTOR OPTOCOUPLERS 0FT8ELECTB0HICS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS “T h e 4N 35,4N 36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS


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    ST1603A C2Q79 E90700 hu1685 C1296A C1S94 VCEat10 C1684 r .85 transistor 100JjA optocouplers 4n35 25CC 4N35 4N36 4N37 C1684 transistor transistor c1684 PDF

    transistor c1684

    Abstract: CNY17-3 CNY-17-3 c1685
    Text: QUALITY •[TECHNOLOGIES VDE APPROVED p h o t o t r a n s is t o r o p t o c o u p l e r s CNY17-1/1Z CNY17-3/3Z CNY17-2/2Z CNY17-4/4Z PACKAGE DIMENSIONS tft DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor.


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    CNY17-1/1Z CNY17-3/3Z CNY17-2/2Z CNY17-4/4Z CNY17 78TYp C2090 CNY17-1: CNY17-2: CNY17-3: transistor c1684 CNY17-3 CNY-17-3 c1685 PDF