MSC81058
Abstract: S010
Text: MSC81058 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 10 W MIN. WITH 10 dB GAIN @ 1 GHz .250 2LFL S010
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MSC81058
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RF NPN POWER TRANSISTOR 2.5 GHZ
Abstract: RF TRANSISTOR 2.5 GHZ s parameter MSC81010
Text: MSC81010 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE P OUT = 10 W MIN. WITH 10 dB GAIN @ 1 GHz .230 2L STUD S016 hermetically sealed ORDER CODE
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MSC81010
MSC81010
RF NPN POWER TRANSISTOR 2.5 GHZ
RF TRANSISTOR 2.5 GHZ s parameter
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MSC81058
Abstract: S010
Text: MSC81058 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE P OUT = 10 W MIN. WITH 10 dB GAIN @ 1 GHz .250 2LFL S010
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MSC81058
Abstract: S010
Text: MSC81058 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 10 W MIN. WITH 10 dB GAIN @ 1 GHz .250 2LFL S010
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MSC81020
Abstract: No abstract text available
Text: MSC81020 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION LOW THERMAL RESISTANCE HERMETIC STRIPAC PACKAGE POUT = 20 W MIN. WITH 10 dB GAIN @ 1 GHz .230 2L STUD S016 hermetically sealed
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MSC81020
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MSC81010
Abstract: No abstract text available
Text: MSC81010 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 10 W MIN. WITH 10 dB GAIN @ 1 GHz .230 2L STUD S016 hermetically sealed ORDER CODE
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MSC81010
MSC81010
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MSC81020
Abstract: No abstract text available
Text: MSC81020 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION LOW THERMAL RESISTANCE HERMETIC STRIPAC PACKAGE P OUT = 20 W MIN. WITH 10 dB GAIN @ 1 GHz .230 2L STUD S016 hermetically sealed
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Untitled
Abstract: No abstract text available
Text: 5 7 . SGS-IHOMSON MSC81010 m RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS EMITTER BALLASTED VSWR CAPABILITY o o ;1 @ RATED CONDITIONS HERMETIC ST RIPAC PACKAGE P o u t = 10 W MIN. WITH 10 dB GAIN @ 1 GHz DESCRIPTION The MSC81010 is a common base hermetically
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MSC81010
MSC81010
7T2T237
C127320
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N :IL[i g?GMD § M S C 8 1 020 RF & M ICROW AVE TR AN SISTO RS GENERAL PURPOSE AM PLIFIER APPLIC ATIO N S • ■ ■ ■ . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION LOW THERMAL RESISTANCE HERMETIC STRIPAC PACKAGE P out = 20 W MIN. WITH 10 dB GAIN
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON I1L[ MSC81058 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY o o :1 @ RATED CONDITIONS HERMETIC STRIP AC PACKAGE P o u t = 10 W MIN. WITH 10 dB GAIN @ 1 GHz PIN CONNECTION
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MSC81058
MSC81058
7T2T237
C127320
J135021C
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SC81058
Abstract: SC8105
Text: SGS-THOMSON :IL[i g?GMD § M S C 8 1 058 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS • EMITTER BALLASTED ■ REFRACTORY/GOLD METALLIZATION ■ VSWR CAPABILITY oo:1 @ RATED CONDITIONS ■ HERMETIC STRIPAC PACKAGE . P out = 10 W MIN. WITH 10 dB GAIN
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SC81058
SC8105
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SC8101
Abstract: No abstract text available
Text: S G S -T H O M S O N :IL[i g?GMD § M S C 8 1 010 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS • EMITTER BALLASTED ■ VSWR CAPABILITY oo:1 @ RATED CONDITIONS . HERMETIC STRIPAC PACKAGE ■ P o u t = 10 W MIN. WITH 10 dB GAIN @ 1 GHz
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MSC81010
SC8101
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Untitled
Abstract: No abstract text available
Text: S G S - I H O M S O N ![Liig¥Mßig§ MSC81020 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . > . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION LOW THERMAL RESISTANCE HERMETIC STRIPAC PACKAGE • P ou t = 20 W MIN. WITH 10 dB GAIN
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MSC81020
MSC81020
C127320
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MSC1002
Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition
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28Vdc
MSC1002
AVIA c cube
IC CD 4440 amplifier circuit diagram
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