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    MSC83305

    Abstract: S010
    Text: MSC83305 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 4.5 W MIN. WITH 4.5 dB GAIN @ 3.0 GHz .250 2LFL S010


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    PDF MSC83305 MSC83305 S010

    MSC83303

    Abstract: S010 079W
    Text: MSC83303 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 3.0 W MIN. WITH 7.0 dB GAIN @ 3.0 GHz .250 2LFL S010


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    PDF MSC83303 MSC83303 S010 079W

    MSC83305

    Abstract: S010 MSC8
    Text: MSC83305 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC  PACKAGE P OUT = 4.5 W MIN. WITH 4.5 dB GAIN @ 3.0 GHz .250 2LFL S010


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    PDF MSC83305 MSC83305 S010 MSC8

    RF NPN POWER TRANSISTOR 3 GHZ

    Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ SGS power amplifier MSC83303 S010
    Text: MSC83303 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC  PACKAGE P OUT = 3.0 W MIN. WITH 7.0 dB GAIN @ 3.0 GHz .250 2LFL S010


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    PDF MSC83303 MSC83303 RF NPN POWER TRANSISTOR 3 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ SGS power amplifier S010

    Untitled

    Abstract: No abstract text available
    Text: rzrz SGS-THOMSON * 7# . M S C 83303 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER BALLASTED . VSWR CAPABILITY o o :1 @ RATED CONDITIONS . HERMETIC ST RIPAC PACKAGE • P out = 3.0 W MIN. WITH 7.0 dB GAIN


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    PDF MSC83303

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON ü « @ iO S MSC83305 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS • REFRACTORY/GOLD METALLIZATION . EMITTER BALLASTED ■ VSWR CAPABILITY oo:1 @ RATED CONDITIONS ■ HERMETIC STRIPAC PACKAGE . P out = 4.5 W MIN. WITH 4.5 dB GAIN


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    PDF MSC83305 MSC83305

    Untitled

    Abstract: No abstract text available
    Text: / = T SGS-THOMSON * 7 # . M»IILiCT[i»D gi MSC83303 RF & M I C R O W A V E T R A N S I S T O R S G ENERAL P U R P O SE A M P LIFIE R A P P LIC A TIO N S > R EFR AC TO R Y/G O LD M ETALLIZATION • EM ITTER BALLASTED ■ VSW R CAPABILITY oo:1 @ RATED C O N D ITIO N S


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    PDF MSC83303 MSC83303

    Untitled

    Abstract: No abstract text available
    Text: S G $ 7 . S - T H O M S O N MSC83305 \u RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER BALLASTED • VSWR CAPABILITY oo:1 @ RATED CONDITIONS . HERMETIC STRIPAC PACKAGE • P o u t = 4.5 W MIN. WITH 4.5 dB GAIN


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    PDF MSC83305 MSC83305 7S2FI237 C125562 J135021C

    MSC1002

    Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition


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    PDF 28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram