d1308
Abstract: d1297 D12971E 2SK2411 2SK2411-Z C10535E C11531E MP-25 MP-25Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2411 is N-Channel MOS Field Effect Transistor designed in millimeter 3.0 ±0.3 for high speed switching applications.
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2SK2411,
2SK2411-Z
2SK2411
d1308
d1297
D12971E
2SK2411-Z
C10535E
C11531E
MP-25
MP-25Z
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NNCD5.6LG
Abstract: C10535E C11531E IEC10000 IEC1000-4-2
Text: DATA SHEET ESD NOISE CLIPPING DIODES NNCD5.6LG to NNCD6.8LG LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD PACKAGE DIMENSIONS This product series is a low capacitance type diode developed (in millimeters)
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IEC1000-4-2
NNCD5.6LG
C10535E
C11531E
IEC10000
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NNCD6.8G
Abstract: NNCD3.9G NNCD5.6G IEC1000 IEC1000-42 IEC1000-4-2 NNCD27G C10535E C11531E D1164
Text: DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3G to NNCD7.5G, NNCD27G ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE : COMMON ANODE 5 PIN MINI MOLD PACKAGE DIMENSIONS This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on
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NNCD27G
IEC1000-4-2
IEC1000-4-
NNCD6.8G
NNCD3.9G
NNCD5.6G
IEC1000
IEC1000-42
NNCD27G
C10535E
C11531E
D1164
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d1308
Abstract: D1297 2SK2411 2SK2411-Z C10535E C11531E MP-25 MP-25Z
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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IEC1000
Abstract: IEC1000-42 IEC1000-4-2 NNCD10E NNCD11E NNCD12E
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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pa1556ah
Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
Text: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET
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O-251/-252,
O-220/-262
SC-96
SC-95
SC-96
OT-23)
D10702EJAV0PF00
pa1556ah
PA1501H
nec PA1501H
PA1556A
PA1550H
PA1556
PA1522H
uPA1712
pa1560h
2sk3326
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C10535E
Abstract: C11531E IEC10000 IEC1000-4-2
Text: DATA SHEET ESD NOISE CLIPPING DIODES NNCD5.6LH to NNCD6.8LH LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE: COMMON ANODE 5-PIN SUPER SMALL MINI MOLD PACKAGE DIMENSIONS This product series is a low capacitance type diode developed
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IEC1000-4-2
C10535E
C11531E
IEC10000
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2SK2941
Abstract: C10535E C10943X C11531E MEI-1202 MP-25 TEA-1035
Text: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2941 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is n-Chanel MOS Field Effect Transistor designed high inmillimeters current switching application. RDS on 1 = 14 mΩ Typ. (VGS = 10 V, ID =18 A)
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2SK2941
30ecial:
2SK2941
C10535E
C10943X
C11531E
MEI-1202
MP-25
TEA-1035
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smd diode 74a
Abstract: IEC1000-4-2 uPD72011 SC-76 SC-78 smd diode 2d smd diode 6D smd lg diode PD7201 SC5915
Text: E.S.D NOISE CLIPPING DIODE SERIES November 1998 E.S.D NOISE CLIPPING DIODES The absorption device for Electrostatic Discharge and Surge NNCD is the diode developed for the absorption device for ESD Electrostatic Discharge and surge. Recently, necessity of complying with the EMC (Electromagnetic Compatibility) regulation
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IEC1000-4-2
D11663EJ4V0PF00
smd diode 74a
uPD72011
SC-76
SC-78
smd diode 2d
smd diode 6D
smd lg diode
PD7201
SC5915
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NEC NNCD4.7A
Abstract: IEC1000 IEC1000-42 IEC1000-4-2 NNCD10A NNCD11A NNCD12A MEI-1201
Text: DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3A to NNCD12A ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 400 mW TYPE This product series is a diode developed for E.S.D (Electrostatic PACKAGE DIMENSIONS Discharge) noise protection. Based on the IEC1000-4-2 test on
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NNCD12A
IEC1000-4-2
IEC1000-4-
NEC NNCD4.7A
IEC1000
IEC1000-42
NNCD10A
NNCD11A
NNCD12A
MEI-1201
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C11892E
Abstract: 2SJ495 TEA-1035 A3856 m30 tf 125
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel MOS Field Effect Transistor in millimeter designed for high current switching applications. 10.0 ± 0.3
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2SJ495
C11892E
2SJ495
TEA-1035
A3856
m30 tf 125
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SHEET DATA MOS FIELD EFFECT POWER TRANSISTORS µPA1703 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect Transis- in millimeter tor designed for power management applications of
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PA1703
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2SK2941
Abstract: C10535E C10943X C11531E MEI-1202 MP-25 TEA-1035
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NNCD4.7D
Abstract: NNCD5.6D C11531E IEC1000 IEC1000-42 IEC1000-4-2 NNCD10D NNCD11D NNCD12D
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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C10535E
Abstract: C10943X C11531E MEI-1202 PA1700A TEA-1035
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NNCD12B
Abstract: IEC1000 IEC1000-42 IEC1000-4-2 NNCD10B NNCD11B
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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a1037
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ ¿¿PA1700A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeter This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power
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uPA1700A
a1037
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Untitled
Abstract: No abstract text available
Text: DATA SHEET ESD NOISE CLIPPING DIODES NNCD5.6LG to NNCD6.8LG LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD PACKAGE DIMENSIONS This product series is a low capacitance type diode developed for ESD (Electrostatic Discharge) absorption.
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IEC1000-4-2
100/i
C11745E
C11531E
C10535E
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transistor 2SK2941
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2941 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T his product is n-Chanel MOS Field Effect Transistor designed high current switching application. FEATURE • Low On-Resistance RDS on i = 14 m il Typ. (V g s = 10 V, Id =18 A)
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2SK2941
transistor 2SK2941
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Untitled
Abstract: No abstract text available
Text: DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3D to NNCD12D ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE PACKAGE DIMENSIONS This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on
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NNCD12D
IEC1000-4-2
NNCD12D
IEC1000-42)
MEI-1201
C11531E
C10535E
C11745E
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Untitled
Abstract: No abstract text available
Text: DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3A to NNCD12A ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 400 mW TYPE T h is p ro d u ct s e rie s is a d iod e d e v e lo p e d fo r E .S .D (E le c tro s ta tic D isch a rg e ) no ise p ro te ctio n . PACKAGE DIMENSIONS
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NNCD12A
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