Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    C112 TRANSISTOR Search Results

    C112 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    C112 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    c112 TRANSISTOR

    Abstract: C1-12
    Text: C1-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The C1-12 is Designed for 12.5 Volt supply. Applications from 450 to 512 MHz. PACKAGE STYLE .280 4L PILL A FEATURES: E • PG = 11 dB Typ. at 1.1 W/470 MHz • ηC = 65 % Typ. at 1.1 W/470 MHz • Omnigold Metalization System


    Original     		C1-12 C1-12 c112 TRANSISTOR PDF

    2N3773 equivalent

    Abstract: transistor h 331 2n6262 2n4347 c112 TRANSISTOR d 331 TRANSISTOR equivalent
    Text: 8368602 SOL ITRON DEVICES re » ? ©atm,®® INC T5 95D DE | f l 3 h a t . 0 E • 02903 00 0 5 ^ 0 3 D □ ^Sww&rßik T~ I — " Devices, Ine MEDIUM VOLTAGE CHIP N U M BER IMPIM SIN G LE DIFFUSED M ESA TRANSISTOR FORMERLY 31 CONTACT METALLIZATION Base, Emitter and Collector Solder Coated 95/5% lead/tin.


    OCR Scan     		JAN2N3771, JAN2N3772, 2N3773. 2N4347, 2N4348, 2N6262 C-112 2N3773 equivalent transistor h 331 2n6262 2n4347 c112 TRANSISTOR d 331 TRANSISTOR equivalent PDF

    2N3773 equivalent

    Abstract: transistor c113 c113 transistor c112 TRANSISTOR d 331 TRANSISTOR equivalent transistor B A O 331 2N6262 2N6262 transistor 331 al jan2n3772
    Text: pia E>iy <mr /a u m ® C o n tr a n Devices. Inc MEDIUM VOLTAGE CHIP NUMBER NPN SINGLE DIFFUSED M ESA TRANSISTOR FORMERLY 31) CONTACT METALLIZATION Base. Emitter and Collector Solder Coated 95/5% lead/tin. ASSEM BLY RECOMMENDATIONS It is advisable that:


    OCR Scan     		79mnj JAN2N3771. JAN2N3772. 2N3773. 2N4347. 2N4348. 2N6262 C-112 C-113 2N3773 equivalent transistor c113 c113 transistor c112 TRANSISTOR d 331 TRANSISTOR equivalent transistor B A O 331 2N6262 2N6262 transistor 331 al jan2n3772 PDF

    c102 TRANSISTOR

    Abstract: C102 M transistor transistor c102 c103 K c103 TRANSISTOR transistor c114 HA13614FH c112 TRANSISTOR transistor c114 diagram Hitachi motor driver
    Text: HA13614FH Combo Spindle & VCM Driver ADE-207-246D (Z) Preliminary 5th Edition October 1998 Description This COMBO driver for HDD application consists of sensorless spindle driver and BTL type VCM driver. “PWM soft switching function” for low power dissipation and less commutation acoustic noise at the same


    Original     		HA13614FH ADE-207-246D FP-48T c102 TRANSISTOR C102 M transistor transistor c102 c103 K c103 TRANSISTOR transistor c114 HA13614FH c112 TRANSISTOR transistor c114 diagram Hitachi motor driver PDF

    c102 TRANSISTOR

    Abstract: TESTING A c114 transistor transistor c114 transistor c102 Hitachi motor driver HA13614FH C116 transistor c10501 transistor c117 Combo Driver
    Text: HA13614FH Combo Spindle & VCM Driver ADE-207-246D (Z) Preliminary, 5th Edition Oct. 1, 1998 Description This COMBO driver for HDD application consists of sensorless spindle driver and BTL type VCM driver. “PWM soft switching function” for low power dissipation and less commutation acoustic noise at the same


    Original     		HA13614FH ADE-207-246D FP-48T c102 TRANSISTOR TESTING A c114 transistor transistor c114 transistor c102 Hitachi motor driver HA13614FH C116 transistor c10501 transistor c117 Combo Driver PDF

    CM45-12A

    Abstract: 8M0B5 MHW252 CM80-28R BGY41B BFR65 2N6166 blw95 BLY94 MHW1342
    Text: RF Transistors for Broadcast Applications SGS-Thomson 55-108MHz Class C for FM Transmitters and Ctass AB for VHF-TV Band I Config. Package Type CE 2X.450SQ4LFL SD1476" CE 2X.450SQ4LFL SD1476 CE .5004LFL SD1457 CE .5004LFL SD1460 2X.450SQ4LFL CE SD1483 * In development, Class AB Icq = 2 X 400 mA


    OCR Scan     		55-108MHz SD1476" 450SQ4LFL SD1476 SD1457 5004LFL SD1460 SD1483 CM45-12A 8M0B5 MHW252 CM80-28R BGY41B BFR65 2N6166 blw95 BLY94 MHW1342 PDF

    Untitled

    Abstract: No abstract text available
    Text: mikromedia+ for PIC32MX7 Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful PIC32MX795F512L microcontroller. TO OUR VALUED CUSTOMERS I want to express my thanks to you for being interested in our products and for having


    Original     		PIC32MX7Â PIC32MX795F512L PIC32Â PIC32 PIC32MX7 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.


    Original     		PTFB183408SV PTFB183408SV 340-watt PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PTFB183408SV PTFB183408SV 340-watt PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz


    Original     		PTFB213004F PTFB213004F 300-watt H-37275-6/2 PDF

    VdS 2093 2009

    Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114
    Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz


    Original     		PTFB213004F PTFB213004F 300-watt H-37275-6/2 VdS 2093 2009 TL2014 transistor c114 chip transistor c114 diagram TL243 TL145 tl1571 TL1621 transistor c114 PDF

    TL172

    Abstract: TL170
    Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications


    Original     		PTFB183404E PTFB183404F PTFB183404E PTFB183404F 340-watt H-37275-6/2 TL172 TL170 PDF

    TL139

    Abstract: TL205 PTFB183404 ptfb183404f transistor TL131
    Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PTFB183404E PTFB183404F PTFB183404F 340-watt H-36275-8 H-37275-6/2 TL139 TL205 PTFB183404 transistor TL131 PDF

    C134 transistor

    Abstract: No abstract text available
    Text: mikromedia+ for Stellaris ARM® Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful LM4F232H5QD microcontroller from ARM® Cortex -M4 family TO OUR VALUED CUSTOMERS


    Original     		LM4F232H5QD C134 transistor PDF

    2N7002DICT-ND

    Abstract: 16SP270M schematic main board J102 fet 4SP820M T TPS5210 TPS5210EVM-116 ECSH1CD226R capacitor 4700 uF 50V X7R murata
    Text: TPS5210EVM-116 Assembly File Effective Date: 02/12/99 B Current EVM Rev: B TEXAS INSTRUMENTS TPS5210EVM-116 Assembly File Table of Contents Introduction. 3


    Original     		TPS5210EVM-116 TPS5210EVM-116 SLVP116DB SLVP116DB2 TPS5210 2N7002DICT-ND 16SP270M schematic main board J102 fet 4SP820M T TPS5210 ECSH1CD226R capacitor 4700 uF 50V X7R murata PDF

    9202c

    Abstract: TA9202C RCA*9202A
    Text: HA RR IS S E N I C O N D S E CT OR SbE D RCA9202A, RCA9ZUZB, HUAWU»; 4 3 D 2 S7 1 0 0 4 0 ^ 1 1 TIM « H A S File Number 1414 4-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 300, 350 and 400 Volts, 65 Watts, Gain of 750 at 2A Features • Direct 1C input without predriver


    OCR Scan     		RCA9202A, O-220AB -220AB TA9202A, TA9202B TA9202C, 92C9-35S2I 92C8-JSMO 92CS-99922 9202c TA9202C RCA*9202A PDF

    p367

    Abstract: sgsp467 P467 sgsp463 sgsp567 SGSP363 sgsp563 P3B7 ic isd 1932 SGSP367
    Text: s G S-THOMSON 07E D ‘ . I 73C 17387 SGSP363/P367 ; SGSP463/P467 ' SGSP563/P567 7^ 2 ^ 3 7 D O D iT ô ^ a 7* 3 ^ ^ fi " “1.1 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


    OCR Scan     		SGSP363/P367 SGSP463/P467 SGSP563/P567 SGSP363 SGSP463 SGSP563 O-220 OT-93 SGSP367 SGSP467 p367 P467 sgsp567 P3B7 ic isd 1932 PDF

    Untitled

    Abstract: No abstract text available
    Text: hrtemational IM ] Rectifier P D - 9.1040 IRGPC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


    OCR Scan     		IRGPC30FD2 10kHz) O-247AC C-116 SS452 PDF

    IRFD020

    Abstract: oasi 10C1 IRFD022 19s7
    Text: HE T D I 4ÖSS452 ^ QQdfl3ti2 *4 1 nil. _ Data Sheet No. PD-9.470A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER TO R IRFD0 2 0 IRFD0 2 2 HEXFET TRANSISTORS N-CHANNEL HEXDIP 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE FEATURES: 50 Volt, 0.10 Ohm, 1-Watt HEXDIP


    OCR Scan     		00Qfl3ti5 C-116- IRFD020 oasi 10C1 IRFD022 19s7 PDF

    Untitled

    Abstract: No abstract text available
    Text: HA13614FH Combo Spindle & VCM Driver HITACHI ADE-207-246A (Z) Preliminary, 2nd Edition January 1, 1998 Description This COMBO driver for HDD application consists of sensorless spindle driver and BTL type VCM driver. “PWM soft switching function” for low power dissipation and less commutation acoustic noise at the same


    OCR Scan     		HA13614FH ADE-207-246A FP-48T PDF

    transistor c114

    Abstract: RLI-135 viper 224 VIPER53 transistor c114 diagram VIPer53 Application Note c113 transistor transistor c113 VIPER53 application J107 DIODE
    Text: AN2067 APPLICATION NOTE VIPower: DIMMABLE WHITE LEDS POWER SUPPLY WITH VIPer53 In the same way that LED manufacturers succeed to realize blue LEDs, they now propose white LEDs inside a monolithic chip, or so called “singlechip white” LEDs. A current source is the more appropriate way to


    Original     		AN2067 VIPer53 transistor c114 RLI-135 viper 224 VIPER53 transistor c114 diagram VIPer53 Application Note c113 transistor transistor c113 VIPER53 application J107 DIODE PDF

    SWITCHING TRANSISTOR C114

    Abstract: C114 E S W transistor C114 transistor C114 dt for C114 transistor transistor c114 e
    Text: P D - 9.1040 International iorJRectifier IRGPC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


    OCR Scan     		10kHz) IRGPC30FD2 C-115 O-247AC SWITCHING TRANSISTOR C114 C114 E S W transistor C114 transistor C114 dt for C114 transistor transistor c114 e PDF

    500w car audio amplifier circuit diagram

    Abstract: 1200w power amplifier circuit diagram 1200w audio amplifier circuit diagram 1200w audio amplifier 1500w mosfet audio amplifier circuit diagram 800w audio amplifier circuit diagram TRIPATH TA3020 1200w Audio power amplifier circuit diagram 1200w car audio amplifier circuit diagram 4 channel 1200w audio amplifier circuit diagram
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on BRIDGED RB-TA3020-1, BRIDGED RB-TA3020-2, BRIDGED RB-TA3020-3 CLASS-T DIGITAL AUDIO AMPLIFIER EVALUATION BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information-Preliminary


    Original     		RB-TA3020-1, RB-TA3020-2, RB-TA3020-3 RB-TA3020 TA3020 RB-TA3020, MURS120T3 STW34NB20 TA3020 500w car audio amplifier circuit diagram 1200w power amplifier circuit diagram 1200w audio amplifier circuit diagram 1200w audio amplifier 1500w mosfet audio amplifier circuit diagram 800w audio amplifier circuit diagram TRIPATH TA3020 1200w Audio power amplifier circuit diagram 1200w car audio amplifier circuit diagram 4 channel 1200w audio amplifier circuit diagram PDF

    juchheim temperature controller 703011

    Abstract: 703030 SWITCHING TRANSISTOR C114 70-303 C111 C112 C113 C114 SP03 EN100015
    Text: JdTRON 16.1 Compact microprocessor controller B 70.3011 Operating Manual 07.01/00346816 ! ! E Please read this Manual carefully before starting up the instrument. Keep this Manual in a place which is at all times accessible to all users. Please assist us to improve this Manual


    Original     		1-800-554-JUMO juchheim temperature controller 703011 703030 SWITCHING TRANSISTOR C114 70-303 C111 C112 C113 C114 SP03 EN100015 PDF