C109 TRANSISTOR Search Results

C109 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

C109 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
q406 transistor Abstract: MAX3232 smd TRANSISTOR Q406 HC49 MEGATEC 0805B105K250CT D-Sub 44-pin female Connector 8X2 LCD DISPLAY transistor C509 MAX3232 pin schematic q406 Text: DEMO9S08LC60 Schematic and Bill of Material DC01134 GND C110 22pF BKGD 22pF C109 BDM J104 2 4 6 4 1 3 www.softecmicro.com GND 3V3 PTB1 ENA J103B PTB0 ENA RESET# R101 10M NOT POPULATED 1 3 5 Y101 32,768KHz CRYSTAL 2 J103A XTAL EXTAL 40 41 42 43 44 45 46 47	Original	PDF	DEMO9S08LC60 DC01134 J103B 768KHz J103A SD00506 100nF BP3/FP40 PTC/10K102FTP RMC1/10K1004FTP q406 transistor MAX3232 smd TRANSISTOR Q406 HC49 MEGATEC 0805B105K250CT D-Sub 44-pin female Connector 8X2 LCD DISPLAY transistor C509 MAX3232 pin schematic q406
Transistor BC107 Abstract: TRANSISTOR C107 BC10 npn transistor transistor c109 Transistor BC109 TRANSISTOR bc107 current gain c107 transistor applications of Transistor BC108 TRANSISTOR bc108 Transistor BC107 NPN Text: GENERAL PURPOSE NPN SMALL SIGNAL TRANSISTOR BC107/A/B/C BC108/A/B/C BC109/A/B/C • Hermetic TO-18 Metal package. • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated	Original	PDF	BC107/A/B/C BC108/A/B/C BC109/A/B/C BC107 BC108 BC109 100mA 300mW BC107 O-206AA) Transistor BC107 TRANSISTOR C107 BC10 npn transistor transistor c109 Transistor BC109 TRANSISTOR bc107 current gain c107 transistor applications of Transistor BC108 TRANSISTOR bc108 Transistor BC107 NPN
TRANSISTOR C107 Abstract: BC10 npn transistor Text: GENERAL PURPOSE NPN SMALL SIGNAL TRANSISTOR BC107/A/B/C BC108/A/B/C BC109/A/B/C • Hermetic TO-18 Metal package. • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated	Original	PDF	BC107/A/B/C BC108/A/B/C BC109/A/B/C BC107 BC108 BC109 100mA 300mW PROPERTIE612 TRANSISTOR C107 BC10 npn transistor
Untitled Abstract: No abstract text available Text: mikromedia+ for PIC32MX7 Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful PIC32MX795F512L microcontroller. TO OUR VALUED CUSTOMERS I want to express my thanks to you for being interested in our products and for having	Original	PDF	PIC32MX7Â PIC32MX795F512L PIC32Â PIC32 PIC32MX7
TRANSISTOR D206 Abstract: KA5S-SERIES IC301 Zener C212 IC LM7805 OF BLOCK diagram D203 diode rg4c mosfet 4108 FS6S1265RE FS6S1565RB Text: www.fairchildsemi.com Application Note 4108 A Fairchild Power Switch based on Switched Mode Power Supply for CRT Monitor Use 1. Introduction FS6S series is a Fairchild Power Switch FPS that is specially designed for off-line SMPS of CRT monitor with minimal external components. This device is a current mode	Original	PDF
TRANSISTOR D206 Abstract: IC301 EER-4445 Zener C212 IC-101 IC101 EER4445 C106 Series BD101 zener c109 Text: www.fairchildsemi.com Application Note 4108 A Fairchild Power Switch based on Switched Mode Power Supply for CRT Monitor Use 1. Introduction This application note describes a complete flyback switched mode power supply that uses a Fairchild Power Switch. The	Original	PDF
IC301 Abstract: TRANSISTOR D206 D2046 Zener C212 IC101 Transistor No C110 FS6S1565RB FS6S1265RB d206 diode EER4445 Text: www.fairchildsemi.com Application Note 4108 A Fairchild Power Switch based on Switched Mode Power Supply for CRT Monitor Use 1. Introduction This application note describes a complete flyback switched mode power supply that uses a Fairchild Power Switch. The	Original	PDF
TRANSISTOR D206 Abstract: IC301 EER4445 Zener C212 c203 opto coupler 4 pin EER-4445 D2046 opto d206 diode rg4c FS6S1265RE Text: www.fairchildsemi.com Application Note 4108 A Fairchild Power Switch based on Switched Mode Power Supply for CRT Monitor Use 1. Introduction This application note describes a complete flyback switched mode power supply that uses a Fairchild Power Switch. The	Original	PDF
TL272 Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O Text: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty	Original	PDF	PTFB201402FC PTFB201402FC H-37248-4 17ubstances. TL272 tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
capacitor marking c106 Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200	Original	PDF	PTFA220081M PTFA220081M capacitor marking c106 NFM18Ps105 TL217 NFM18PS105R0J3 TL222 Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
Untitled Abstract: No abstract text available Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.	Original	PDF	PTFB183408SV PTFB183408SV 340-watt
Untitled Abstract: No abstract text available Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	PDF	PTFB183408SV PTFB183408SV 340-watt
Untitled Abstract: No abstract text available Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz	Original	PDF	PTFB213004F PTFB213004F 300-watt H-37275-6/2
VdS 2093 2009 Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114 Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz	Original	PDF	PTFB213004F PTFB213004F 300-watt H-37275-6/2 VdS 2093 2009 TL2014 transistor c114 chip transistor c114 diagram TL243 TL145 tl1571 TL1621 transistor c114

FRD070IF40-A Abstract: FRD070IF40-A-T C-118 Text: V mikromedia 7 for STM32F4 Amazingly compact, all-on-single-pcb development board carring 7” TFT Touch Screen and lots of multimedia peripherals, all driven by powerful STM32F407ZG microcontroller from ARM Cortex -M4 family To our valued customers I want to express my thanks to you for being interested in our products and for	Original	PDF	STM32F4 STM32F407ZG STM32F4 STM32, STM32F4 FRD070IF40-A FRD070IF40-A-T C-118
TL172 Abstract: TL170 Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications	Original	PDF	PTFB183404E PTFB183404F PTFB183404E PTFB183404F 340-watt H-37275-6/2 TL172 TL170
c102 TRANSISTOR Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113 Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200	Original	PDF	PTFA220081M PTFA220081M PG-SON-10 c102 TRANSISTOR c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
TL139 Abstract: TL205 PTFB183404 ptfb183404f transistor TL131 Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications	Original	PDF	PTFB183404E PTFB183404F PTFB183404F 340-watt H-36275-8 H-37275-6/2 TL139 TL205 PTFB183404 transistor TL131
Hitachi DSA00279 Abstract: No abstract text available Text: HA13605A Three-Phase Brushless Motor Driver ADE-207-201A Z 2nd. Edition February, 1998 Description The HA13605A is a three-phase brushless motor driver IC that provides digital speed control on chip. It was developed for use as the drum motor driver in plain paper copiers and has the following functions and	Original	PDF	HA13605A ADE-207-201A HA13605A D-85622 Hitachi DSA00279
Untitled Abstract: No abstract text available Text: mikromedia+ for STM32 ARM Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful STM32F407ZG microcontroller from ARM® Cortex -M4 family TO OUR VALUED CUSTOMERS	Original	PDF	STM32 STM32F407ZG STM32,
TL139 Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	PDF	PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
0338c Abstract: No abstract text available Text: Jfàilitron Devices. Inc M E D IU M TO HIGH V O L T A G E , HIGH C U R R E N T CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: 50,000 A Aluminum Collector: Gold Polished silicon ox "Chrome Nickel Silver" also available	OCR Scan	PDF	203mm) O-114 10MHz 10MHz 338C/W 1200pF 0338c
1200PF Abstract: Solitron Text: 8368602 SOI TTRDM nVvTPFS TMH 950 SOLITRON DEVICES INC -Jfatitron_ Devices. Inc. 02900_ TS de D ~T~~~ 3 I-2-t \| ô3t.at,na □□ q h ^ g q h \|~ ^ EHyKgTT ©ÄTTÄIL©d MEDIUM TO HIGH VOLTAGE, HIGH CU RR EN T CHIP NUMBER PIMP EPITAXIAL PLAIMAR POWER TRANSISTOR	OCR Scan	PDF	O-114 10MHz 10MHz 1200pF Solitron
Untitled Abstract: No abstract text available Text: [^ ©yeTT ©attäl « IDevices. Inc. M ED IUM TO HIGH V O LT A G E, HIGH C U R R E N T CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: ► 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available	OCR Scan	PDF	938mm 938mm) 508mm) 700mm) 524mm) 203mm) O-114 10MHz

C109 TRANSISTOR Search Results

C109 TRANSISTOR Result Highlights (5)

C109 TRANSISTOR Datasheets Context Search

q406 transistor

Transistor BC107

TRANSISTOR C107

Untitled

TRANSISTOR D206

TRANSISTOR D206

IC301

TRANSISTOR D206

TL272

capacitor marking c106

Untitled

Untitled

Untitled

VdS 2093 2009

FRD070IF40-A

TL172

c102 TRANSISTOR

TL139

Hitachi DSA00279

Untitled

TL139

0338c

1200PF

Untitled