C107 TRANSISTOR Search Results

C107 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

C107 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Transistor BC107 Abstract: TRANSISTOR C107 BC10 npn transistor transistor c109 Transistor BC109 TRANSISTOR bc107 current gain c107 transistor applications of Transistor BC108 TRANSISTOR bc108 Transistor BC107 NPN Text: GENERAL PURPOSE NPN SMALL SIGNAL TRANSISTOR BC107/A/B/C BC108/A/B/C BC109/A/B/C • Hermetic TO-18 Metal package. • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated	Original	BC107/A/B/C BC108/A/B/C BC109/A/B/C BC107 BC108 BC109 100mA 300mW BC107 O-206AA) Transistor BC107 TRANSISTOR C107 BC10 npn transistor transistor c109 Transistor BC109 TRANSISTOR bc107 current gain c107 transistor applications of Transistor BC108 TRANSISTOR bc108 Transistor BC107 NPN	PDF
TRANSISTOR C107 Abstract: BC10 npn transistor Text: GENERAL PURPOSE NPN SMALL SIGNAL TRANSISTOR BC107/A/B/C BC108/A/B/C BC109/A/B/C • Hermetic TO-18 Metal package. • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated	Original	BC107/A/B/C BC108/A/B/C BC109/A/B/C BC107 BC108 BC109 100mA 300mW PROPERTIE612 TRANSISTOR C107 BC10 npn transistor	PDF
capacitor marking c106 Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200	Original	PTFA220081M PTFA220081M capacitor marking c106 NFM18Ps105 TL217 NFM18PS105R0J3 TL222 Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA	PDF
TL113 Abstract: tl201 TL217 w3 smd transistor transistor c111 Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200	Original	PTFA220081M PTFA220081M PG-SON-10 TL113 tl201 TL217 w3 smd transistor transistor c111	PDF
c102 TRANSISTOR Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113 Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200	Original	PTFA220081M PTFA220081M PG-SON-10 c102 TRANSISTOR c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113	PDF
transistor c735 Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103 Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency	Original	PTFA220041M PTFA220041M PG-SON-10 transistor c735 ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103	PDF
FR10300N0200J Abstract: UT-085 BLF645 2861002402 deltabond 152 UT-085C-15 transistor C103 c103 TRANSISTOR AN10953 C5750X7S2A106M Text: AN10953 BLF645 10 MHz to 600 MHz 120 W amplifier Rev. 1 — 3 March 2011 Application note Document information Info Content Keywords BLF645, broadband Abstract The BLF645 is a 100 W, 32 V LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications from HF to 1.4 GHz. This	Original	AN10953 BLF645 BLF645, FR10300N0200J UT-085 2861002402 deltabond 152 UT-085C-15 transistor C103 c103 TRANSISTOR AN10953 C5750X7S2A106M	PDF
Untitled Abstract: No abstract text available Text: mikromedia+ for PIC32MX7 Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful PIC32MX795F512L microcontroller. TO OUR VALUED CUSTOMERS I want to express my thanks to you for being interested in our products and for having	Original	PIC32MX7Â PIC32MX795F512L PIC32Â PIC32 PIC32MX7	PDF
CQ1265RT Abstract: CQ0765RT cq1565rt cq1265rt schematic diagram cq0765 CQ0765RT circuit diagram CQ0765R cq0965rt cq1265 cq0565rt Text: www.fairchildsemi.com FSCQ-Series FSCQ0565RT / FSCQ0765RT / FSCQ0965RT / FSCQ1265RT FSCQ1465RT / FSCQ1565RT / FSCQ1565RP Green Mode Fairchild Power Switch FPSTM Features • Optimized for Quasi-Resonant Converter (QRC) • Advanced Burst-Mode Operation for under 1W Standby	Original	FSCQ0565RT FSCQ0765RT FSCQ0965RT FSCQ1265RT FSCQ1465RT FSCQ1565RT FSCQ1565RP 230VAC CQ1265RT CQ0765RT cq1565rt cq1265rt schematic diagram cq0765 CQ0765RT circuit diagram CQ0765R cq0965rt cq1265 cq0565rt	PDF
TL272 Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O Text: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty	Original	PTFB201402FC PTFB201402FC H-37248-4 17ubstances. TL272 tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O	PDF
FRD070IF40-A Abstract: FRD070IF40-A-T C-118 Text: V mikromedia 7 for STM32F4 Amazingly compact, all-on-single-pcb development board carring 7” TFT Touch Screen and lots of multimedia peripherals, all driven by powerful STM32F407ZG microcontroller from ARM Cortex -M4 family To our valued customers I want to express my thanks to you for being interested in our products and for	Original	STM32F4 STM32F407ZG STM32F4 STM32, STM32F4 FRD070IF40-A FRD070IF40-A-T C-118	PDF
CQ0765RT circuit diagram Abstract: CQ0765 10uf, 35v electrolytic capacitor cq1265rt schematic diagram cq0765rt VR201 Text: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a	Original	Q0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP CQ0765RT circuit diagram CQ0765 10uf, 35v electrolytic capacitor cq1265rt schematic diagram cq0765rt VR201	PDF
Untitled Abstract: No abstract text available Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.	Original	PTFB183408SV PTFB183408SV 340-watt	PDF
Untitled Abstract: No abstract text available Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	PTFB183408SV PTFB183408SV 340-watt	PDF

CQ1265RT Abstract: CQ0765RT circuit diagram cq1565rt cq0965rt CQ0765RT CQ1465RT cq1265rt schematic diagram CQ0765 CQ0765R cq1265 Text: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a	Original	Q0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP CQ1265RT CQ0765RT circuit diagram cq1565rt cq0965rt CQ0765RT CQ1465RT cq1265rt schematic diagram CQ0765 CQ0765R cq1265	PDF
SMD r801 Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223 Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,	Original	PTFA220041M PTFA220041M SMD r801 TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223	PDF
CQ0765RT Abstract: CQ1265RT CQ1565RT cq0765rt TRANSISTOR CQ0765RT circuit diagram cq1265 cq0565rt CQ1465RT cq0965rt FSCQ0565RTYDTU Text: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a	Original	Q0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP CQ0765RT CQ1265RT CQ1565RT cq0765rt TRANSISTOR CQ0765RT circuit diagram cq1265 cq0565rt CQ1465RT cq0965rt FSCQ0565RTYDTU	PDF
Untitled Abstract: No abstract text available Text: mikromedia+ for STM32 ARM Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful STM32F407ZG microcontroller from ARM® Cortex -M4 family TO OUR VALUED CUSTOMERS	Original	STM32 STM32F407ZG STM32,	PDF
TL172 Abstract: TL170 Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications	Original	PTFB183404E PTFB183404F PTFB183404E PTFB183404F 340-watt H-37275-6/2 TL172 TL170	PDF
TRANSISTOR C802 Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104	PDF
c102 TRANSISTOR Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113	PDF
TL225 Abstract: ATC100A6R2CW150X Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 TL225 ATC100A6R2CW150X	PDF
c107 TRANSISTOR equivalent Abstract: transistor c107 m TRANSISTOR C107 c106 TRANSISTOR c107 TRANSISTOR Text: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC TS 95D 02 8 9 7 DeT\| a3t,abOH □□□Eflcì7 fi D 3 3 - ^ 3 f~ Devices, Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum	OCR Scan	305mm) C-106 C-107 c107 TRANSISTOR equivalent transistor c107 m TRANSISTOR C107 c106 TRANSISTOR c107 TRANSISTOR	PDF
c103 TRANSISTOR equivalent Abstract: TRANSISTOR c105 c105 TRANSISTOR MK1210 transistor c107 m c103 m TRANSISTOR C102 M transistor c107 TRANSISTOR equivalent c102 TRANSISTOR triac C105 Text: 1 Introduction Increasingly power supplies used in applications such as home appliance, office automation,communications and industrial area need to operate on the main AC line 100V and 200V as products are manufactured for global markets. Traditionally power supplies have been designed to operate on either 100V	OCR Scan	200VAC 2606C 95-220V 200uA c103 TRANSISTOR equivalent TRANSISTOR c105 c105 TRANSISTOR MK1210 transistor c107 m c103 m TRANSISTOR C102 M transistor c107 TRANSISTOR equivalent c102 TRANSISTOR triac C105	PDF

C107 TRANSISTOR Search Results

C107 TRANSISTOR Result Highlights (5)

C107 TRANSISTOR Datasheets Context Search

Transistor BC107

TRANSISTOR C107

capacitor marking c106

TL113

c102 TRANSISTOR

transistor c735

FR10300N0200J

Untitled

CQ1265RT

TL272

FRD070IF40-A

CQ0765RT circuit diagram

Untitled

Untitled

CQ1265RT

SMD r801

CQ0765RT

Untitled

TL172

TRANSISTOR C802

c102 TRANSISTOR

TL225

c107 TRANSISTOR equivalent

c103 TRANSISTOR equivalent