C106 SENSITIVE GATE Search Results

C106 SENSITIVE GATE Result Highlights (5)

Part	Manufacturer	Description
TLP5702H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TLP5705H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TB67H481FTG	Toshiba Electronic Devices & Storage Corporation	Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32
GT30J110SRA	Toshiba Electronic Devices & Storage Corporation	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)
7UL2T125FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC

C106 SENSITIVE GATE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
c106mg pin out Abstract: C106DG C106MG C106M1G scr c106bg scr c106mg scr C106DG C106BG C106X C106D Text: C106 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is	Original	C106/D c106mg pin out C106DG C106MG C106M1G scr c106bg scr c106mg scr C106DG C106BG C106X C106D	PDF
C106D1 Abstract: scr C106 scr C106B c106 scr SCR C106D1 c106d pin out circuit using c106d1 SCR C106D SCR C106m C106 Text: C106 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is	Original	C106B, r14525 C106/D C106D1 scr C106 scr C106B c106 scr SCR C106D1 c106d pin out circuit using c106d1 SCR C106D SCR C106m C106	PDF
scr c106mg Abstract: C106DG C106MG SCR C106D equivalent circuit scr C106DG C106BG scr C106BG C106M1G SCR C106D equivalent SCR c106 Text: C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is	Original	O-225AA scr c106mg C106DG C106MG SCR C106D equivalent circuit scr C106DG C106BG scr C106BG C106M1G SCR C106D equivalent SCR c106	PDF
C106D Abstract: C106MG C106DG C106Bg scr c106mg c106d pin out c106mg pin out scr C106BG C106MG datasheet scr C106 Text: C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is	Original	O-225AA C106/D C106D C106MG C106DG C106Bg scr c106mg c106d pin out c106mg pin out scr C106BG C106MG datasheet scr C106	PDF
C106 MG Abstract: C106MG transistors C106 MG scr c106mg SCR C106D equivalent circuit C106D1G c106d pin out SCR C106m equivalent circuit C106D SCR equivalent SCR C106D Text: C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is	Original	C106/D C106 MG C106MG transistors C106 MG scr c106mg SCR C106D equivalent circuit C106D1G c106d pin out SCR C106m equivalent circuit C106D SCR equivalent SCR C106D	PDF
SCR C106D1 Abstract: scr C106 scr C106B c106d pin out Application of scr c106D SCR C106D SCR C106m C106B C106D C106D1 Text: C106 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is	Original	C106B, r14525 C106/D SCR C106D1 scr C106 scr C106B c106d pin out Application of scr c106D SCR C106D SCR C106m C106B C106D C106D1	PDF
C106MG Abstract: c106d pin out C106DG c106mg pin out scr c106mg C106BG C106M1G C106D1 pin out diagram scr C106 SCR C106m Text: C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is	Original	O-225AA C106/D C106MG c106d pin out C106DG c106mg pin out scr c106mg C106BG C106M1G C106D1 pin out diagram scr C106 SCR C106m	PDF
c106d pin out Abstract: scr C106 C106 Series C106D to-126 scr C106D CHARACTERISTICS C106 C106B SCR C106m transistor c106 c106 scr Text: C106 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is	Original	C106B, r14525 C106/D c106d pin out scr C106 C106 Series C106D to-126 scr C106D CHARACTERISTICS C106 C106B SCR C106m transistor c106 c106 scr	PDF
scr C106B Abstract: SCR C106D1 C106 Series scr C106D CHARACTERISTICS C106 c106m c106 scr SCR c106 c106d scr C106D Text: C106 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is	Original	C106B, C-106 scr C106B SCR C106D1 C106 Series scr C106D CHARACTERISTICS C106 c106m c106 scr SCR c106 c106d scr C106D	PDF
C106MG Abstract: No abstract text available Text: C106 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is	Original	C106/D C106MG	PDF
C106MG Abstract: scr c106mg C106 MG SCR C106D equivalent circuit SCR C106m equivalent circuit C106D SCR equivalent equivalent SCR c106 C106D1G scr C106D CHARACTERISTICS c106d equivalent Text: C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is	Original	C106B, C-106 C106MG scr c106mg C106 MG SCR C106D equivalent circuit SCR C106m equivalent circuit C106D SCR equivalent equivalent SCR c106 C106D1G scr C106D CHARACTERISTICS c106d equivalent	PDF
scr C106 Abstract: c106d pin out to225aa SCR C106m scr C106B SCR C-106B C106D to-126 scr C106D C106 Series c106 scr Text: C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is	Original	C106B, r14525 C106/D scr C106 c106d pin out to225aa SCR C106m scr C106B SCR C-106B C106D to-126 scr C106D C106 Series c106 scr	PDF
scr C106 Abstract: c106d pin out scr C106D scr C106B SCR C106D equivalent circuit SCR C106m C106 Series SCR 106 B circuit using c106d1 C106d silicon controlled rectifier Text: C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is	Original	C106B, C106/D scr C106 c106d pin out scr C106D scr C106B SCR C106D equivalent circuit SCR C106m C106 Series SCR 106 B circuit using c106d1 C106d silicon controlled rectifier	PDF
c106d pin out Abstract: SCR 1 c106d scr C106B c106 scr c106d1 scr c106d application notes C106D to-126 C106 Series C106d silicon controlled rectifier C106 Series scr Text: C106 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is	Original	C106B, C106M1 O-225 00V-04 \\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000817\08162000 3\ONSM\08032000 C106M1T c106d pin out SCR 1 c106d scr C106B c106 scr c106d1 scr c106d application notes C106D to-126 C106 Series C106d silicon controlled rectifier C106 Series scr	PDF

Untitled Abstract: No abstract text available Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular ampliier applications in the 2300 to 2700 MHz frequency band. Manufactured with Inineon's	Original	PTFC260202FC PTFC260202FC 10-watt H-37248-4	PDF
Untitled Abstract: No abstract text available Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's	Original	PTFC260202FC PTFC260202FC 10-watt H-37248-4	PDF
Untitled Abstract: No abstract text available Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's	Original	PTFC260202FC PTFC260202FC 10-watt H-37248-4	PDF
TL205 Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147 Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's	Original	PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147	PDF
smd C105 Abstract: diode smd d232 SEMIKRON dynamic test BOARD Text: Board 2//3S SKYPER 42 R Absolute Maximum Ratings Symbol SKYPER Values Unit Vs Supply voltage primary 16 V IoutPEAK Output peak current 30 A IoutAVmax Output average current 150 mA fmax Max. switching frequency 100 kHz VCE Collector emitter voltage sense across	Original	Visol12 Rev03 smd C105 diode smd d232 SEMIKRON dynamic test BOARD	PDF
scr C106 Abstract: cr703a RS Components cr703a 369A Text: MCR703A Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is	Original	MCR703A MCR703A: CR703A, MCR704A MCR706A MCR708NCTION scr C106 cr703a RS Components cr703a 369A	PDF
scr C106D Abstract: C106M RCA SCR C106m scr C106 AC scr c106d RCA-C106 JEDEC-TO-202AB C106D scr C106B C106D circuits Text: SOLID STATE Dl Dlf\|3ö7S0öl 0017704 7 3875081 G E SOLID STATE 0 1E 17704 D T-2 ^ -/3 Silicon Controlled Rectifiers- C106 Series File Number 1005 T ER M IN A L DESIG N AT IO N S 4-A Sensitive-Gate Silicon Controlled Rectifiers For Power-Switching and Control Application	OCR Scan	DD177GM O-220AB RCA-C106 110oC 00--A//js 82--A2s 10/ra scr C106D C106M RCA SCR C106m scr C106 AC scr c106d JEDEC-TO-202AB C106D scr C106B C106D circuits	PDF
SCR C106D terminal and characteristic Abstract: scr C106 C106 Series scr C106 scr C106D C106 Series C106D circuits SCR C106m unjf C106E Text: SO LI » S T A T E DI T Ë T \| 3 ô 7S O Û 1 D 0 1 7 7 0 4 7 38 75 081 G E S O L I D S T A T E Silicon Controlled Rectifiers- C106 Series File Number 4-A Sensitive-Gate Silicon Controlled Rectifiers 1005 TER M IN A L DESIGNATIONS For Power-Switching and C ontrol A pplication	OCR Scan	D1770M O-220AB RCA-C106 92CS-IM37 SCR C106D terminal and characteristic scr C106 C106 Series scr C106 scr C106D C106 Series C106D circuits SCR C106m unjf C106E	PDF
scr C106 Abstract: C106Y1 equivalent equivalent SCR c106 c106b1 equivalent SCR C106Y1 SCR TRIGGER circuit dc charger ge c106b1 c106 scr SCR C203 SCR 406J Text: C 103 C203 - 2 N 50 6 0-64 30-200 3 0 400 ?5 400 05 0.8 0 .3 2 * 85 C 0.50 @ 25’ C tlllS lIlt 0 50 @ 2 5 3C- 1.0 < 85° C C3 GE TYPE 2 N 8 7 7 -8 1 "1 JEDEC C5 2N 2322-29 C6 07 - 2N 2 344-48 25-400 25-200 - C106 C107 C 108 - - - 50 4 00 15-600 1 *« K .	OCR Scan	2N877-81 2N5060-64 2N2322-29 2N1595-99 X45-REF scr C106 C106Y1 equivalent equivalent SCR c106 c106b1 equivalent SCR C106Y1 SCR TRIGGER circuit dc charger ge c106b1 c106 scr SCR C203 SCR 406J	PDF
scr C106 Abstract: c106 scr equivalent SCR c106 GE scr C106 GE C106F2 SCR C106Y1 CI06 SCR C106Y1 terminal SCR 406J C106B2 Text: Silicon Controlled Rectifier Flat Pack Design Model C106 Up to 600 Volts 4 Amperes RMS o PRO D U C T FEATURES The Type C106 Silicon Controlled Rectifier (SCR) has the following outstanding featu res: o Cl 06 TYPE 4 LOW COST Cl 06 TYPE 2 O perates directly fro m low signal	OCR Scan	X45-REF scr C106 c106 scr equivalent SCR c106 GE scr C106 GE C106F2 SCR C106Y1 CI06 SCR C106Y1 terminal SCR 406J C106B2	PDF

C106 SENSITIVE GATE Search Results

C106 SENSITIVE GATE Result Highlights (5)

C106 SENSITIVE GATE Datasheets Context Search

c106mg pin out

C106D1

scr c106mg

C106D

C106 MG

SCR C106D1

C106MG

c106d pin out

scr C106B

C106MG

C106MG

scr C106

scr C106

c106d pin out

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TL205

smd C105

scr C106

scr C106D

SCR C106D terminal and characteristic

scr C106

scr C106