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    C105 TRANSISTOR Search Results

    C105 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C105 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    capacitor marking c106

    Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200


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    PDF PTFA220081M PTFA220081M capacitor marking c106 NFM18Ps105 TL217 NFM18PS105R0J3 TL222 Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA

    TL113

    Abstract: tl201 TL217 w3 smd transistor transistor c111
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200


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    PDF PTFA220081M PTFA220081M PG-SON-10 TL113 tl201 TL217 w3 smd transistor transistor c111

    c102 TRANSISTOR

    Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200


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    PDF PTFA220081M PTFA220081M PG-SON-10 c102 TRANSISTOR c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113

    npn TRANSISTOR c105

    Abstract: TRANSISTOR c105 c105 TRANSISTOR ku vsat "buffer amplifier" SC-551-42 c105 regenerative braking c103 m TRANSISTOR TRANSISTOR C107 HA13609ANT
    Text: HA13609ANT Three-Phase Brushless Motor Driver ADE-207-232 Z 1st. Edition May 1997 Description The HA13609ANT is a 3-phase brushless motor driver IC with digital speed control. It is designed for use as a PPC or LBP scanner motor driver and provides the functions and features listed below.


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    PDF HA13609ANT ADE-207-232 HA13609ANT 16-bit npn TRANSISTOR c105 TRANSISTOR c105 c105 TRANSISTOR ku vsat "buffer amplifier" SC-551-42 c105 regenerative braking c103 m TRANSISTOR TRANSISTOR C107

    npn TRANSISTOR c105

    Abstract: 3PHA 20 TRANSISTOR c105 HA13609ANT phenom 2 955 diagram c105 TRANSISTOR Transistor No C110 3PHA PNP power transistors by hitachi Hitachi DSA00279
    Text: HA13609ANT Three-Phase Brushless Motor Driver ADE-207-232 Z 1st. Edition May 1997 Description The HA13609A NT is a 3-pha se brushless motor drive r IC with digita l spee d contr ol. It is designe d for use as a PPC or LBP scanner motor driver and provides the functions and features listed below.


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    PDF HA13609ANT ADE-207-232 HA13609A 16-bit D-85622 npn TRANSISTOR c105 3PHA 20 TRANSISTOR c105 HA13609ANT phenom 2 955 diagram c105 TRANSISTOR Transistor No C110 3PHA PNP power transistors by hitachi Hitachi DSA00279

    transistor c735

    Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


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    PDF PTFA220041M PTFA220041M PG-SON-10 transistor c735 ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103

    2.1 channel subwoofer amplifier circuit diagram

    Abstract: transistor subwoofer circuit diagram 30w subwoofer circuit diagram subwoofer preamplifier circuit diagram active subwoofer circuit diagram subwoofer filter circuit diagram ACTIVE SUBWOOFER WITH AMP npn TRANSISTOR c105 subwoofer box diagram c105 TRANSISTOR
    Text: Maxim > App Notes > Audio Circuits Keywords: audio, class-d, classd, amplifier, power, active filter, mp3, active eq, woofer, subwoofer, tweeter, 2.1 channel, high pass filter, parametric eq, sallen-key filter, speaker, speakers Feb 27, 2009 APPLICATION NOTE 4320


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    PDF MAX9736 com/an4320 MAX9736A: MAX9736B: AN4320, APP4320, Appnote4320, 2.1 channel subwoofer amplifier circuit diagram transistor subwoofer circuit diagram 30w subwoofer circuit diagram subwoofer preamplifier circuit diagram active subwoofer circuit diagram subwoofer filter circuit diagram ACTIVE SUBWOOFER WITH AMP npn TRANSISTOR c105 subwoofer box diagram c105 TRANSISTOR

    30w subwoofer circuit diagram

    Abstract: subwoofer preamplifier circuit diagram transistor subwoofer circuit diagram subwoofer amplifier circuit diagram ACTIVE SUBWOOFER WITH AMP Active subwoofer circuit 2.1 channel subwoofer amplifier circuit diagram subwoofer preamplifier circuit 12v subwoofer amp circuits bass control in stereo 12v active subwoofer IC
    Text: Maxim > App Notes > Audio Circuits Keywords: audio, class-d, classd, amplifier, power, active filter, mp3, active eq, woofer, subwoofer, tweeter, 2.1 channel, high pass filter, parametric eq, sallen-key filter, speaker, speakers Feb 27, 2009 APPLICATION NOTE 4320


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    PDF MAX9736 com/an4320 MAX9736A: MAX9736B: AN4320, APP4320, Appnote4320, 30w subwoofer circuit diagram subwoofer preamplifier circuit diagram transistor subwoofer circuit diagram subwoofer amplifier circuit diagram ACTIVE SUBWOOFER WITH AMP Active subwoofer circuit 2.1 channel subwoofer amplifier circuit diagram subwoofer preamplifier circuit 12v subwoofer amp circuits bass control in stereo 12v active subwoofer IC

    C101-C104

    Abstract: C101 C104 AG SMD TRANSISTOR
    Text: MMBTRC101SS . MMBTRC106SS MMBTRC101SS . MMBTRC106SS Surface Mount Bias Resistor Transistors SMD Transistoren mit Eingangsspannungsteiler NPN NPN Version 2011-02-10 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse


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    PDF MMBTRC101SS MMBTRC106SS OT-23 O-236) UL94V-0 C101-C104 C101 C104 AG SMD TRANSISTOR

    FR10300N0200J

    Abstract: UT-085 BLF645 2861002402 deltabond 152 UT-085C-15 transistor C103 c103 TRANSISTOR AN10953 C5750X7S2A106M
    Text: AN10953 BLF645 10 MHz to 600 MHz 120 W amplifier Rev. 1 — 3 March 2011 Application note Document information Info Content Keywords BLF645, broadband Abstract The BLF645 is a 100 W, 32 V LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications from HF to 1.4 GHz. This


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    PDF AN10953 BLF645 BLF645, FR10300N0200J UT-085 2861002402 deltabond 152 UT-085C-15 transistor C103 c103 TRANSISTOR AN10953 C5750X7S2A106M

    TL272

    Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
    Text: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty


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    PDF PTFB201402FC PTFB201402FC H-37248-4 17ubstances. TL272 tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O

    CQ1265RT

    Abstract: CQ0765RT cq1565rt cq1265rt schematic diagram cq0765 CQ0765RT circuit diagram CQ0765R cq0965rt cq1265 cq0565rt
    Text: www.fairchildsemi.com FSCQ-Series FSCQ0565RT / FSCQ0765RT / FSCQ0965RT / FSCQ1265RT FSCQ1465RT / FSCQ1565RT / FSCQ1565RP Green Mode Fairchild Power Switch FPSTM Features • Optimized for Quasi-Resonant Converter (QRC) • Advanced Burst-Mode Operation for under 1W Standby


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    PDF FSCQ0565RT FSCQ0765RT FSCQ0965RT FSCQ1265RT FSCQ1465RT FSCQ1565RT FSCQ1565RP 230VAC CQ1265RT CQ0765RT cq1565rt cq1265rt schematic diagram cq0765 CQ0765RT circuit diagram CQ0765R cq0965rt cq1265 cq0565rt

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.


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    PDF PTFB183408SV PTFB183408SV 340-watt

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


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    PDF PTFB183408SV PTFB183408SV 340-watt

    VdS 2093 2009

    Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114
    Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz


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    PDF PTFB213004F PTFB213004F 300-watt H-37275-6/2 VdS 2093 2009 TL2014 transistor c114 chip transistor c114 diagram TL243 TL145 tl1571 TL1621 transistor c114

    CQ0765RT circuit diagram

    Abstract: CQ0765 10uf, 35v electrolytic capacitor cq1265rt schematic diagram cq0765rt VR201
    Text: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a


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    PDF Q0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP CQ0765RT circuit diagram CQ0765 10uf, 35v electrolytic capacitor cq1265rt schematic diagram cq0765rt VR201

    SMD r801

    Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,


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    PDF PTFA220041M PTFA220041M SMD r801 TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223

    CQ1265RT

    Abstract: CQ0765RT circuit diagram cq1565rt cq0965rt CQ0765RT CQ1465RT cq1265rt schematic diagram CQ0765 CQ0765R cq1265
    Text: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a


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    PDF Q0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP CQ1265RT CQ0765RT circuit diagram cq1565rt cq0965rt CQ0765RT CQ1465RT cq1265rt schematic diagram CQ0765 CQ0765R cq1265

    Untitled

    Abstract: No abstract text available
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power ampliier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,


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    PDF PTFA220041M PTFA220041M PG-SON-10

    CQ0765RT

    Abstract: CQ1265RT CQ1565RT cq0765rt TRANSISTOR CQ0765RT circuit diagram cq1265 cq0565rt CQ1465RT cq0965rt FSCQ0565RTYDTU
    Text: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a


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    PDF Q0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP CQ0765RT CQ1265RT CQ1565RT cq0765rt TRANSISTOR CQ0765RT circuit diagram cq1265 cq0565rt CQ1465RT cq0965rt FSCQ0565RTYDTU

    c102 TRANSISTOR

    Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


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    PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113

    npn TRANSISTOR c105

    Abstract: TRANSISTOR c104 c105 TRANSISTOR TRANSISTOR c105 s 271 5A c104 TRANSISTOR 2N3720 2N4901 2N4906 SDT3322
    Text: ^outran i?K i5 ty) STr ättm=©( MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc. PIMP EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 71) CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)


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    PDF 203mm) C-105 npn TRANSISTOR c105 TRANSISTOR c104 c105 TRANSISTOR TRANSISTOR c105 s 271 5A c104 TRANSISTOR 2N3720 2N4901 2N4906 SDT3322

    npn TRANSISTOR c105

    Abstract: TRANSISTOR c105 TRANSISTOR c104 c104 TRANSISTOR c105 TRANSISTOR 2N4906
    Text: -Jfclitron Devices. Inc. I F K ® y ¥ © Ä T T M ,® ® MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP N U M BER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * FORMERLY 71 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver“ also available)


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    PDF 203mm) 2N3720, 2N4901 2N4906, SDT3322 SDT3329 C-104 C-105 npn TRANSISTOR c105 TRANSISTOR c105 TRANSISTOR c104 c104 TRANSISTOR c105 TRANSISTOR 2N4906

    c103 TRANSISTOR equivalent

    Abstract: TRANSISTOR c105 c105 TRANSISTOR MK1210 transistor c107 m c103 m TRANSISTOR C102 M transistor c107 TRANSISTOR equivalent c102 TRANSISTOR triac C105
    Text: 1 Introduction Increasingly power supplies used in applications such as home appliance, office automation,communications and industrial area need to operate on the main AC line 100V and 200V as products are manufactured for global markets. Traditionally power supplies have been designed to operate on either 100V


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    PDF 200VAC 2606C 95-220V 200uA c103 TRANSISTOR equivalent TRANSISTOR c105 c105 TRANSISTOR MK1210 transistor c107 m c103 m TRANSISTOR C102 M transistor c107 TRANSISTOR equivalent c102 TRANSISTOR triac C105