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    C 9013 TRANSISTOR Search Results

    C 9013 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C 9013 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor BR 9013

    Abstract: transistor c 9013 transistor 9013 NPN 9013 s 9013 h PNP 9013 9013 transistor BR 9012 c 9013 g 9013 npn transistor
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 50MHz transistor BR 9013 transistor c 9013 transistor 9013 NPN 9013 s 9013 h PNP 9013 9013 transistor BR 9012 c 9013 g 9013 npn transistor

    NPN 9013

    Abstract: transistor BR 9013 pin configuration NPN transistor 9013 npn 9013 npn transistor 9013 transistor pin configuration NPN transistor 9012 PNP 9013 NPN transistor c 9013 9013 pnp data sheet NPN 9013
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 50MHz NPN 9013 transistor BR 9013 pin configuration NPN transistor 9013 npn 9013 npn transistor 9013 transistor pin configuration NPN transistor 9012 PNP 9013 NPN transistor c 9013 9013 pnp data sheet NPN 9013

    transistor BR 9013

    Abstract: transistor c 9013 transistor 9013 9013 transistor BR 9013 9013 pnp NPN 9013 9013 NPN Transistor Transistor-9013 h 9013 NPN Output Transistor
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 50MHz transistor BR 9013 transistor c 9013 transistor 9013 9013 transistor BR 9013 9013 pnp NPN 9013 9013 NPN Transistor Transistor-9013 h 9013 NPN Output Transistor

    transistor c 9013

    Abstract: transistor BR 9013 NPN 9013 9013 transistor transistor 9013 BR 9013 9013 npn transistor 9013 pnp pin configuration NPN transistor 9013 npn 9013
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 50MHz transistor c 9013 transistor BR 9013 NPN 9013 9013 transistor transistor 9013 BR 9013 9013 npn transistor 9013 pnp pin configuration NPN transistor 9013 npn 9013

    9013 npn transistor

    Abstract: 9012 Unisonic
    Text: UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 1  FEATURES TO-92 * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity.


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    PDF 625mW) 500mA) 9013L-x-T92-B 9013G-x-T92-B 9013L-x-T92-K 9013G-x-T92-K QW-R201-030 9013 npn transistor 9012 Unisonic

    transistor BR 9013

    Abstract: BR 9013 transistor 9012 data sheet NPN 9013 9013 transistor 9013 npn transistor datasheet transistor 9013 data sheet transistor 9012 transistor c 9013 9013 npn
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    9013 transistor

    Abstract: Transistor-9013 h UTC 9013 9013 NPN Transistor
    Text: UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012 1 TO-92 1: EMITTER


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    PDF 625mW) 500mA) 500mA 500mA, QW-R201-030 9013 transistor Transistor-9013 h UTC 9013 9013 NPN Transistor

    UTC 9013

    Abstract: 9013 NPN data sheet NPN 9013 transistor c 9013 9013 npn transistor NPN SILICON TRANSISTOR 9013 UTC9013 NPN 9013 PDF DATA SHEET 9013npn 9012 Unisonic
    Text: UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012 1 TO-92 1: EMITTER


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    PDF 625mW) 500mA) QW-R201-030 UTC 9013 9013 NPN data sheet NPN 9013 transistor c 9013 9013 npn transistor NPN SILICON TRANSISTOR 9013 UTC9013 NPN 9013 PDF DATA SHEET 9013npn 9012 Unisonic

    9013 npn

    Abstract: NPN 9013 transistor c 9013 9013 npn transistor 9013G C 9013 transistor transistor 9013 9013 NPN Output Transistor IC 9013 transistor 9013 H NPN
    Text: UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION „ FEATURES 1 * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity. * Complementary to UTC 9012


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    PDF 625mW) 500mA) 9013-x-T92-B 9013L-x-T92-B 9013G-x-T92-B 9013-x-T92-K 9013L-x-T92-K 9013G-x-T92-K 9013-x-T92-R 9013L-x-T92-R 9013 npn NPN 9013 transistor c 9013 9013 npn transistor 9013G C 9013 transistor transistor 9013 9013 NPN Output Transistor IC 9013 transistor 9013 H NPN

    9013 NPN Output Transistor

    Abstract: transistor c 9013 transistor cs 9012 transistor cs 9013
    Text: UNISONICTECHNOLOGIESCO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1 W OU T PU T AM PLI FI ER OF POT ABLE RADI OS I N CLASS B PU SH -PU LL OPERAT I ON ̈ 1 FEAT U RES * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity.


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    PDF 625mW) 500mA) 9013-x-T92-B 9013L-x-T92-B 9013G-x-T92-B 9013-x-T92-K 9013L-x-T92-K 9013G-x-T92-K 9013-x-T92-R 9013L-x-T92-R 9013 NPN Output Transistor transistor c 9013 transistor cs 9012 transistor cs 9013

    9012 Unisonic

    Abstract: No abstract text available
    Text: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER


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    PDF 625mW) -500mA) -50mA -500mA -500mA -10mA QW-R201-029 9012 Unisonic

    Untitled

    Abstract: No abstract text available
    Text: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER


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    PDF 625mW) -500mA) QW-R201-029

    9012 pnp

    Abstract: UTC 9013 9012 transistor data sheet transistor 9012 Transistor 9012 G PNP 9012 transistor c 9012 9012 pnp transistor 9013 transistor Transistor 9013
    Text: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER


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    PDF 625mW) -500mA) QW-R201-029 9012 pnp UTC 9013 9012 transistor data sheet transistor 9012 Transistor 9012 G PNP 9012 transistor c 9012 9012 pnp transistor 9013 transistor Transistor 9013

    Transistor-9013 h

    Abstract: Transistor 9013 transistor BR 9013 9012 pnp data sheet transistor 9012 transistor c 9012 PNP 9012 data sheet NPN 9013 Transistor 9012 G 9013 transistor
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    FS9922-DMM3-DS-06

    Abstract: AD1P fs9922
    Text: REV. 0.6 FS9922-DMM3-DS-06_EN Datasheet FS9922-DMM3 Integrated Circuits of 4,000 Counts Auto-ranging Digital Multimeter with Bar Graph SEP 2006 FS9922-DMM3 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd.,


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    PDF FS9922-DMM3-DS-06 FS9922-DMM3 FS9922-DM 100-pin AD1P fs9922

    FS9922-DMM3

    Abstract: No abstract text available
    Text: FS9922-DMM3 Data Sheet Integrated Circuits of 4,000 Counts Auto-ranging Digital Multimeter with Bar Graph Rev. 0.5 Dec. 2004 Fortune Semiconductor Corp. FS9922-DMM3-DS-05_EN CR-004 FS9922-DMM3 Taipei Office: 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251,


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    PDF FS9922-DMM3 FS9922-DMM3-DS-05 CR-004 100-pin FS9922-DMM3

    9012 Unisonic

    Abstract: 9012L-
    Text: UNISONIC TECHNOLOGIES CO., LTD 9012 PNP SILICON EPITAXIAL TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION  1 FEATURES TO-92 *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity


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    PDF 625mW) -500mA) 9012L-x-T92-B 9012G-x-T92-B 9012L-x-T92-K 9012G-x-T92-K QW-R201-0at QW-R201-029 9012 Unisonic 9012L-

    Untitled

    Abstract: No abstract text available
    Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • High total pow er dissipation. PT=625mW High C ollector Current. (Ic= -500m A) C om plem entary to S S 9013 Excellent hpE linearity.


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    PDF SS9012 625mW -500m

    transistor c 9018

    Abstract: Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor
    Text: SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Output AM R E C E IV E R r- IF 2 IF1 Conv. 901Ì 901 9012 A F Amp. 9011 SP. 9014 or :9015 7 <1 9013 Output FM R E C E IV E R F M RF 90! 6 rF M Conv. F M IF A M Conv. 9011/8 9016/8 A M / F M IF AF A m o A M / F M IF


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    PDF T0-92B 500fi 10kfi transistor c 9018 Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor

    transistor BR 9013

    Abstract: NPN 9013 transistor c 9013 9013 npn transistor br 9013 transistor 9012 9013 9013 transistor Transistor 9013 9013 pnp transistor npn c 9013
    Text: HN 9013 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, G and H, according to its DC current gain. As complementary type


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    9014 ch

    Abstract: transistor npn c 9014 9018 transistor transistor c 9018 9011 9012 9013 9014 9018 100-10L 9018 transistor 9013 NPN audio output 9011 9012 pnp transistor
    Text: »v'.-T i V.y*, 7 “ •1 v í- j m £?| P Im I I I m . C-iS.fi w - f , , :;1 | AM. FM RADIO TRANSISTOR KIT „ L’ J V->.' ., t« V SELECTION CUIDE FOR FIVI RADIO TRANSISTOR KIT A IVI Output KM 9012 AM RECEIVER w AF Amp- IF 2 IF Conv. SP. KM90J4 KM 9011


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    PDF O-92A 9014 ch transistor npn c 9014 9018 transistor transistor c 9018 9011 9012 9013 9014 9018 100-10L 9018 transistor 9013 NPN audio output 9011 9012 pnp transistor

    9011 9012 9013 9014 9018

    Abstract: 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015
    Text: 'ty i / >; •i CL9000 i ÎÏ t it -V, 1'* r-t, *i *Vj 1t E i SERIES AM FM RADIO TRANSISTOR KIT G U ID E SELECTION FOR AM / FM RADIO TRANSISTOR KIT Output AM R EC EIV ER? Y _ son IF2 IF1 Conv. H 90 H 9012 AF Amp. 9014 M 90U SP. or <1 :9015 9013 Output FM R EC EIV ER


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    PDF CL9000 T0-92B 10kfi 9011 9012 9013 9014 9018 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015

    CP1005

    Abstract: 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014
    Text: fi* £ ,. ¿YrA \ *j i w 'äf? m m H :;1 i Ä \jif- ^ s •'«•J-, m &3W^m¡jfir . Ï 'iS.fi. I FM SERIES AM. FM RADIO TRANSISTOR KIT - ^ttk SELECTION AIV! K M 9000 ¡8a¡$ W bJ . GUIDE FOR RADIO TRANSISTOR KIT Output KM 9012 AM RECEIVER? y Conv. IF KM901I


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    PDF KM90II KM90I5 KM901I/8 KM90II/8 KM90I4 KM9015 KM90I: KM90i to-92a CP1005 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014

    2SC 9012

    Abstract: 2N243 2N244 1961 30 TRANSISTOR lc 5012 m ScansUX7 9012 transistor transistor 2sc 9012
    Text: TYPES 2N243, 2N244 N-P-N GROWN-JUNCTION SILICON TRANSISTORS B U LL ET IN NO. DL-S 612238, D EC EM B E R 1961 Oval Welded Package m echanical data The transistor is in an oval welded package with glass-to-metal hermetic seal between case and leads. Unit weight is approximately 1 gram. The mounting clip is hardware supplied with the transistor.


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    PDF 2N243, 2N244 60x10' 300x10-* 2SC 9012 2N243 1961 30 TRANSISTOR lc 5012 m ScansUX7 9012 transistor transistor 2sc 9012