Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    C 8050D TRANSISTOR Search Results

    C 8050D TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C 8050D TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN transistor 8050d

    Abstract: BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor
    Text: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original
    PDF 100mA NPN transistor 8050d BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor

    transistor br 8050

    Abstract: NPN transistor 8050d BR 8050 8050d st 8050d 8050C BR 8050D he 8050d BR 8050c 8050c transistor
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations.


    Original
    PDF 8050C 8050D transistor br 8050 NPN transistor 8050d BR 8050 8050d st 8050d 8050C BR 8050D he 8050d BR 8050c 8050c transistor

    NPN transistor 8050d

    Abstract: transistor br 8050d 8050c transistor transistor br 8050 NPN transistor 8050C BR 8050 BR 8050 D
    Text: 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original
    PDF 100mA 800mA 800mA, NPN transistor 8050d transistor br 8050d 8050c transistor transistor br 8050 NPN transistor 8050C BR 8050 BR 8050 D

    BR 8050 D

    Abstract: NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d
    Text: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original
    PDF 100mA BR 8050 D NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d

    NPN transistor 8050d

    Abstract: BR 8050 D 8050c transistor transistor br 8050 8050 TRANSISTOR PNP 8050c BR 8050 transistor 8050d st 8050d BR 8050D
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original
    PDF 100mA 800mA 800mA, NPN transistor 8050d BR 8050 D 8050c transistor transistor br 8050 8050 TRANSISTOR PNP 8050c BR 8050 transistor 8050d st 8050d BR 8050D

    NPN transistor 8050d

    Abstract: 8050c transistor BR 8050 D 8050 pnp transistor st 8050d transistor 8050d BR 8550 BR 8050 8050C 8050D
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original
    PDF 100mA 800mA 800mA, NPN transistor 8050d 8050c transistor BR 8050 D 8050 pnp transistor st 8050d transistor 8050d BR 8550 BR 8050 8050C 8050D

    NPN transistor 8050d

    Abstract: BR 8050 D transistor br 8050 st 8050d 8050c 8050 pnp transistor 8050c transistor BR 8050 S 8050 transistor 8050d
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original
    PDF 100mA 800mA 800mA, NPN transistor 8050d BR 8050 D transistor br 8050 st 8050d 8050c 8050 pnp transistor 8050c transistor BR 8050 S 8050 transistor 8050d

    NPN transistor 8050d

    Abstract: BR 8050 D 8050c transistor transistor BR 8050 st 8050d 8050d BR 8050 TRANSISTOR 8050D transistor S 8050 8050 pnp transistor
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original
    PDF 100mA 800mA 800mA, NPN transistor 8050d BR 8050 D 8050c transistor transistor BR 8050 st 8050d 8050d BR 8050 TRANSISTOR 8050D transistor S 8050 8050 pnp transistor

    transistor br 8050

    Abstract: BR 8050 D BR 8050 NPN transistor 8050 PNP 8550 BR 8050 c hFE 8050 transistor b 8050 1/STK 8050 ic
    Text: 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original
    PDF

    st 8050d

    Abstract: st8050c st8050d BR 8050 D st 8050C 8050c transistor 8050 TRANSISTOR PNP BR 8050 st 8050 8050B
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original
    PDF

    NPN transistor 8050d

    Abstract: bc 8050 TRANSISTOR 8050 8050 d h 8050 transistor 8050 pin details NPN transistor 500ma TO-92 he 8050 d transistor TRANSISTOR c 8050 transistor b 8050
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 8050 SR13 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO VALUE 25 UNITS


    Original
    PDF C-120 190505E NPN transistor 8050d bc 8050 TRANSISTOR 8050 8050 d h 8050 transistor 8050 pin details NPN transistor 500ma TO-92 he 8050 d transistor TRANSISTOR c 8050 transistor b 8050

    st 8050d

    Abstract: 8050 TRANSISTOR PNP BR 8050 BR 8050 D transistor br 8050 st8050c st 8050C 8050 pnp transistor NPN transistor 8050d 8050D
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original
    PDF

    st 8050d

    Abstract: st8050c st 8050C ST8050D transistor b 8050 st 8050 8050B transistor br 8050 transistor 8050d 8050c transistor
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original
    PDF

    st 8050d

    Abstract: NPN transistor 8050d st8050c TRANSISTOR c 8050 transistor br 8050 BR 8050 D BR 8050 transistor b 8050 8050 pnp transistor 8050 TRANSISTOR PNP
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original
    PDF

    NPN transistor 8050d

    Abstract: 8050d transistor he 8050d 8050D W83972D greatek W83791SD W55FXX W83791SG W83791D
    Text: W83791SD/ W83791SG WINBOND H/W MONITORING IC -I- Publication Release Date: January 18, 2005 Revision 1.1 W83791SD/W83791SG Revision History PAGES DATES 1 n.a. 2 n.a. 01/Jan 3 n.a. 4 n.a. VERSION VERSION ON WEB MAIN CONTENTS n.a. All version before 0.50 are for internal use.


    Original
    PDF W83791SD/ W83791SG W83791SD/W83791SG 01/Jan 02/Apr 05/Jan NPN transistor 8050d 8050d transistor he 8050d 8050D W83972D greatek W83791SD W55FXX W83791SG W83791D

    he 8050d

    Abstract: c 8050d 8050d transistor c8050d W55FXX w55f108 greatek W83972D
    Text: W83791SD/ W83791SG WINBOND H/W MONITORING IC -I- Publication Release Date: April 14, 2005 Revision 2.0 W83791SD/W83791SG Table of Contents1. GENERAL DESCRIPTION . 1


    Original
    PDF W83791SD/ W83791SG W83791SD/W83791SG he 8050d c 8050d 8050d transistor c8050d W55FXX w55f108 greatek W83972D

    he 8050d

    Abstract: c 8050d c8050d W83972D W55FXX W83791SD w55f10 8050D AC97 W83791D
    Text: W83791SD Winbond H/W Monitoring IC W83791SD W83791SD Data Sheet Revision History Pages Dates 1 n.a. 2 n.a. 01/Jan 3 n.a. 02/Apr Version Version on Web Main Contents n.a. All version before 0.50 are for internal use. 0.5 n.a. First publication. 1.0 1.0 Change all version include version on web site


    Original
    PDF W83791SD W83791SD 01/Jan 02/Apr 100pF W55F10 he 8050d c 8050d c8050d W83972D W55FXX w55f10 8050D AC97 W83791D

    aivr341

    Abstract: aIVR aivr 341 aIVR2104 aIVR4208 HT7335 8050D HT7136 Aivr34112 APLUS
    Text: Integrated Circuits Inc. aIVR Series A PLUS MAKE YOUR PRODUCTION A-PLUS Data Sheet aIVR1004 – 10 sec aIVR2104 – 21 sec aIVR4208 – 42 sec aIVR8508 – 85 sec aIVR34112 – 341 sec APLUS INTEGRATED CIRCUITS INC. Address: 3 F-10, No. 32, Sec. 1, Chenggung Rd., Taipei,


    Original
    PDF aIVR1004 aIVR2104 aIVR4208 aIVR8508 aIVR34112 85sec 8050D. aivr341 aIVR aivr 341 aIVR2104 aIVR4208 HT7335 8050D HT7136 Aivr34112 APLUS

    W523X

    Abstract: 8050D W5231 W5232 W5233 W5234
    Text: W523X Power Speech LOW VOLTAGE ADPCM VOICE SYNTHESIZER GENERAL DESCRIPTION The W523X is a programmable speech synthesis IC that utilizes the ADPCM coding method to generate all types of voice effects. The W523X's LOAD and JUMP commands and four programmable


    Original
    PDF W523X W523X W5231, W5232, W5233, W5234. W5231 W5232 8050D W5231 W5232 W5233 W5234

    8050d

    Abstract: W58101 W58102 W58103 W58104 W58105 W58106 W58110 W58115 W58120
    Text: W581XX ADPCM VOICE SYNTHESIZER ENHANCED PowerSpeech GENERAL DESCRIPTION The W581XX is a programmable IC speech synthesizer that utilizes the ADPCM coding method to generate all types of sound effects. The W581XX's LOAD and JUMP commands and eight programmable registers provide powerful user-programmable functions that make this chip suitable


    Original
    PDF W581XX W581XX W58101, W58102, W58103, W58104, W58105, W58106, 8050d W58101 W58102 W58103 W58104 W58105 W58106 W58110 W58115 W58120

    HT7335

    Abstract: aivr 4208 aIVR4208 aIVR NPN transistor 8050d aIVR2104 he 8050d APLUS HT7136 8050D
    Text: Integrated Circuits Inc. aIVR1004/2104/4208 A PLUS MAKE YOUR PRODUCTION A-PLUS Data Sheet aIVR1004 – 10 sec aIVR2104 – 21 sec aIVR4208 – 42 sec APLUS INTEGRATED CIRCUITS INC. Address: 3 F-10, No. 32, Sec. 1, Chenggung Rd., Taipei, Taiwan 115, R.O.C.


    Original
    PDF aIVR1004/2104/4208 aIVR1004 aIVR2104 aIVR4208 42sec 8050D. 14KHz 14KHz, HT7335 aivr 4208 aIVR4208 aIVR NPN transistor 8050d aIVR2104 he 8050d APLUS HT7136 8050D

    he 8050d

    Abstract: stpa 8050D W55FXX W58100 speaker 8 ohm stpa 200
    Text: Preliminary W58100 ADPCM VOICE SYNTHESIZER ROM-LESS ENHANCED PowerSpeech GENERAL DESCRIPTION The W58100 is a CMOS IC that is used solely for the purpose of demonstrating the W581xx series enhanced PowerSpeech products. The W58100 employs the same JUMP-GO architecture as Winbond's other PowerSpeech products.


    Original
    PDF W58100 W58100 W581xx he 8050d stpa 8050D W55FXX speaker 8 ohm stpa 200

    stpa

    Abstract: transistor 8050 8050D W5231 W5232 W5233 W5234 W523X winbond powerspeech stpa 200
    Text: W523X PowerSpeech LOW VOLTAGE ADPCM VOICE SYNTHESIZER GENERAL DESCRIPTION The W523X is a programmable speech synthesis IC that utilizes the ADPCM coding method to generate all types of voice effects. The W523X's LOAD and JUMP commands and four programmable


    Original
    PDF W523X W523X W5231, W5232, W5233, W5234. W5231 W5232 stpa transistor 8050 8050D W5231 W5232 W5233 W5234 winbond powerspeech stpa 200

    BR 8050 D

    Abstract: transistor br 8050 BR 8050 8050 TRANSISTOR PNP 8050 pnp transistor NPN transistor 8050d transistor b 8050 TRANSISTOR c 8050 80500 TRANSISTOR 8050 d h
    Text: HN 8050 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type


    OCR Scan
    PDF 103mA BR 8050 D transistor br 8050 BR 8050 8050 TRANSISTOR PNP 8050 pnp transistor NPN transistor 8050d transistor b 8050 TRANSISTOR c 8050 80500 TRANSISTOR 8050 d h