MSP55
Abstract: No abstract text available
Text: MSP55 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550ã V(BR)CBO (V)550 I(C) Max. (A)350m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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MSP55
Freq40M
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Untitled
Abstract: No abstract text available
Text: DT600-550 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550º V(BR)CBO (V) I(C) Max. (A)750 Absolute Max. Power Diss. (W)3.0k Maximum Operating Temp (øC)140õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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DT600-550
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Untitled
Abstract: No abstract text available
Text: MSP55A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550ã V(BR)CBO (V)550 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)4.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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MSP55A
Freq30M
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR BC549/550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE B C A ᴌFor Complementary with PNP Type BC559/560. N MAXIMUM RATING Ta=25ᴱ 30 VCBO BC550 BC549 Collector-Emitter Voltage 50 30 VCEO 45 UNIT
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BC549/550
BC559/560.
BC549
BC550
100mA,
100MHz
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Untitled
Abstract: No abstract text available
Text: MJ300A2F55 Transistors Darlington Independent Power Module Circuits Per Package1 Isolated Case Y/N Yes V(BR)CEO (V)550ö V(BR)CBO (V) I(C) Max. (A)300 Absolute Max. Power Diss. (W)1400 Maximum Operating Temp (øC)150õ h(FE) Min. Current gain.80 @I(C) (A) (Test Condition)300
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MJ300A2F55
Code5-10
NumberTR00500010
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cc100r600
Abstract: No abstract text available
Text: CC100R600K Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)550 V(BR)CBO (V)600 I(C) Max. (A)100 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)150 h(FE) Min. Current gain.40 @I(C) (A) (Test Condition)100
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CC100R600K
cc100r600
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Untitled
Abstract: No abstract text available
Text: KD225575 Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)550ö V(BR)CBO (V)600 I(C) Max. (A)75 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)150õ h(FE) Min. Current gain.75 @I(C) (A) (Test Condition)75
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KD225575
NumberTR00700002
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Amplifier with transistor bc549
Abstract: BC550 BC549 BC549 NPN transistor BC549 DATASHEET bc549 equivalent transistor bc550 bc549 noise figure LBC550 BC549 NPN transistor download datasheet
Text: SEMICONDUCTOR BC549/550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE B C A For Complementary with PNP Type BC559/560. N E K MAXIMUM RATING Ta=25 G J D SYMBOL 30 VCBO Collector-Base Voltage BC550 BC549 V 50 VEBO
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BC549/550
BC559/560.
BC550
BC549
100mA,
100MHz
Amplifier with transistor bc549
BC550
BC549
BC549 NPN transistor
BC549 DATASHEET
bc549 equivalent
transistor bc550
bc549 noise figure
LBC550
BC549 NPN transistor download datasheet
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BC560
Abstract: bc559 TRANSISTOR bc560 transistor BC559
Text: SEMICONDUCTOR BC559/560 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. B FEATURE C A ・For Complementary with NPN Type BC549/550. N E K G MAXIMUM RATING Ta=25℃ SYMBOL RATING UNIT -30 BC559 VCBO Collector-Base Voltage V BC560 -50
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BC549/550.
BC559/560
BC559
BC560
TRANSISTOR bc560
transistor BC559
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BC560
Abstract: BC559 pnp bc559 transistor TRANSISTOR bc560 transistor bc549
Text: SEMICONDUCTOR BC559/560 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. FEATURE B C A ᴌFor Complementary with NPN Type BC549/550. N MAXIMUM RATING Ta=25ᴱ -30 VCBO BC560 BC559 Collector-Emitter Voltage -50 -30 VCEO -45 UNIT V H V
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BC559/560
BC549/550.
BC559
BC560
-100mA,
-10mA,
100MHz
BC560
BC559
pnp bc559 transistor
TRANSISTOR bc560
transistor bc549
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Untitled
Abstract: No abstract text available
Text: 2SC4517 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550 V(BR)CBO (V)900 I(C) Max. (A)3 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)800 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)1
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2SC4517
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 77-C hannel 550 M Hz CATV Input/O utput Trunk A m p lifier MHW6172 . . . designed specifically for 550 MHz CATV applications. Features ion-implanted arsenic emitter transistors with 7 GHz f j and an all gold metallization
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77-Channel
MHW6172
60-Channel
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MPS-A65
Abstract: No abstract text available
Text: Miniature Transistors TYPE POLA CASE NO. RITY H FE MAXIMUM RATINGS Pd It ^C E O mW (mA) (V) min max Ic ^C E (mA) (V) BC146 BC146R BC146Y BC146G N N N N MT-42 MT-42 MT-42 MT-42 50 50 50 50 50 50 50 50 20 20 20 20 80 80 140 280 550 200 350 550 0.2 0.2 0.2
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BC146
BC146R
BC146Y
BC146G
BC200
BC200R
BC200Y
BC200G
BCW83
MT4102
MPS-A65
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bc556
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER . HIGH VO LTAG E: BC556, VCEo= -65V . LOW NOISE: BC559, BC560 • C om plem ent to BC546 . BC 550 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base C apacitance
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BC556/557/558/559/560
BC556,
BC559,
BC560
BC546
BC556
BC557/560
BC558/559
bc556
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transistor B 560
Abstract: BC 557 PNP TRANSISTOR transistor bc 558 pnp TRANSISTOR C 557 B transistor c 557 transistor bc 557 c le transistor 557 b B 557 PNP TRANSISTOR TRANSISTOR 557 TRANSISTOR BC 560
Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER • HIGH VO LTAG E: BC556, V CEo = -65V • LO W NOISE: BC559, BC560 • C om plem ent to BC546 . BC 550 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase C apacitance
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BC556/557/558/559/560
BC556,
BC559,
BC560
BC546
BC556
BC557/560
BC558/559
transistor B 560
BC 557 PNP TRANSISTOR
transistor bc 558 pnp
TRANSISTOR C 557 B
transistor c 557
transistor bc 557 c le
transistor 557 b
B 557 PNP TRANSISTOR
TRANSISTOR 557
TRANSISTOR BC 560
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transistor C 548 B
Abstract: transistor c 548 BC547 bc548 transistor 547 TRANSISTOR bc546 fairchild transistor b 548 transistor bc547 transistor 547 b C 548 B
Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER • HIGH VO LTAG E: BC546, VCeo=65V • LO W NOISE: BC549, BC550 • C om plem ent to BC556 . BC560 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage
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BC546/547/548/549/550
BC546,
BC549,
BC550
BC556
BC560
BC546
BC547/550
BC548/549
transistor C 548 B
transistor c 548
BC547
bc548 transistor
547 TRANSISTOR
bc546 fairchild
transistor b 548
transistor bc547
transistor 547 b
C 548 B
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER . HIGH VO LTAG E: BC546, VCeo= 65V . LOW NOISE: BC549, BC550 • C om plem ent to BC556 . BC560 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage
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BC546/547/548/549/550
BC546,
BC549,
BC550
BC556
BC560
BC546
BC547/550
BC548/549
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BC549 NPN transistor
Abstract: BC550 BC549 Amplifier with transistor bc549 transistor bc549 transistor bc550 bc550 noise figure
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC549/550 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC BC549 BC550 C o l l e c t o r - E m i t t e r BC549 Voltage BC550 Emitter-Base Voltage
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BC549/550
BC549
BC550
BC55br
10j/A,
BC549 NPN transistor
BC550
Amplifier with transistor bc549
transistor bc549
transistor bc550
bc550 noise figure
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BC559
Abstract: TRANSISTOR bc560 BC560 bc560 c
Text: SEMICONDUCTOR TECHNICAL DATA BC559/560 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. FEATURE • For Complementary With NPN Type BC549/550. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC BC559 Collector-Base Voltage BC560 C ollector-Em itter BC559 Voltage
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BC559/560
BC549/550.
BC559
BC560
-10JUA,
-100mA,
TRANSISTOR bc560
BC560
bc560 c
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER • HIGH VOLTAGE: BC556, VCEo= -65V • LOW NOISE: BC559, BC560 • Complement to BC546 . BC 550 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a ra c te ris tic Sym bol Collector-Base Capacitance
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BC556/557/558/559/560
BC556,
BC559,
BC560
BC546
BC556
BC557/560
BC558/559
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TRANSISTOR C 557 B
Abstract: BC 558 transistor transistor c 557 transistor B 560 transistor 557 b transistor bc 557 c le B 557 PNP TRANSISTOR transistor 200ma pnp bc transistor c 558 BC559
Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AF AMPLIFIER • HIGH VOLTAGE: BC556, V Ce o = - 6 5 • LOW NOISE: 8C 559, BCS60 • Com plem ent to BC546 . BC 550 V ABSOLUTE MAXIMUM RATINGS Ta=25°C C hara c te ristic Sym bol C ollector Base Capacitance
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BC556/557/558/559/560
BC556,
8C559,
BCS60
BC546
BC556
BC557/560
BC558/559
BC557/56Ã
TRANSISTOR C 557 B
BC 558 transistor
transistor c 557
transistor B 560
transistor 557 b
transistor bc 557 c le
B 557 PNP TRANSISTOR
transistor 200ma pnp bc
transistor c 558
BC559
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CB 548 transistor
Abstract: transistor C 548 B
Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER • HIGH VOLTAGE: BC546, VCeo=65V • LOW NOISE: BC549, BC550 • Complement to BC556 . BC560 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a ra c te ris tic Sym bol Collector Base Voltage
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OCR Scan
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PDF
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BC546/547/548/549/550
BC546,
BC549,
BC550
BC556
BC560
BC546
BC547/550
BC548/549
CB 548 transistor
transistor C 548 B
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MD-60
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 77-C hannel 550 MHz CATV A m plifier M HW 6342 . . . designed specifically for 5 5 0 M H z C A TV applications. Features ion-im planted arsenic emitter transistors with 7 G H z fT and an all gold metallization system.
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PDF
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77-Channel
60-Channel
CTB77
MHW6342
MD-60
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transistor c 548
Abstract: transistor C 548 B transistor 547 b transistor C 547 c transistor c 548 c C 547 B C 547 transistor transistor b 548 transistor C 547 C 547 C
Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER . HIGH VO LT A G E : BC546, V CEo=65V • L O W NOISE: BC549, B C5S0 • Complement to BC556 . B C 560 ABSOLUTE MAXIMUM RATINGS <TA=25t C h aracte ristic Sym b o l Collector Base Voltage
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BC546/547/548/549/550
BC546,
BC549,
BC556
BC546
BC547/550
BC548/549
BC546
BC547/550
BC548/549/550
transistor c 548
transistor C 548 B
transistor 547 b
transistor C 547 c
transistor c 548 c
C 547 B
C 547 transistor
transistor b 548
transistor C 547
C 547 C
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