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    C 38 MARKING CODE TRANSISTOR Search Results

    C 38 MARKING CODE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C 38 MARKING CODE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCP52-16

    Abstract: BFN38 BFN39 E6327 VPS05163
    Text: BFN38 NPN Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and 4 switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage 3 • Complementary type: BFN39 PNP 2 1 Type Marking BFN38 BFN 38


    Original     		PDF BFN38 BFN39 VPS05163 OT223 BCP52-16 BFN38 BFN39 E6327 VPS05163

    Untitled

    Abstract: No abstract text available
    Text: BFN38 NPN Silicon High-Voltage Transistors • Suitable for video output stages TV sets 4 and switching power supplies 3 2 • High breakdown voltage 1 • Low collector-emitter saturation voltage • Complementary type: BFN39 PNP • Pb-free (RoHS compliant) package


    Original     		PDF BFN38 BFN39 BFN38 OT223

    Untitled

    Abstract: No abstract text available
    Text: BFN38 NPN Silicon High-Voltage Transistors • Suitable for video output stages TV sets and switching power supplies 4 3 2 • High breakdown voltage 1 • Low collector-emitter saturation voltage • Complementary type: BFN39 PNP Type BFN38 Marking BFN38 1=B


    Original     		PDF BFN38 BFN39 BFN38 OT223

    J-STD-020D

    Abstract: No abstract text available
    Text: DPLS325E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70mΩ at 3A


    Original     		PDF DPLS325E DNLS320E) OT-223 DS31327 J-STD-020D

    Untitled

    Abstract: No abstract text available
    Text: DPLS325E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70mΩ at 3A High DC Current Gain hFE > 200 at IC = 2A Complementary NPN Type Available (DNLS320E)


    Original     		PDF DPLS325E DNLS320E) OT-223 J-STD-020D DS31327

    BCP52-16

    Abstract: BFN38 BFN39
    Text: BFN38 NPN Silicon High-Voltage Transistors • Suitable for video output stages TV sets 4 and switching power supplies 3 2 • High breakdown voltage 1 • Low collector-emitter saturation voltage • Complementary type: BFN39 PNP • Pb-free (RoHS compliant) package 1)


    Original     		PDF BFN38 BFN39 BFN38 OT223 BCP52-16 BFN39

    Untitled

    Abstract: No abstract text available
    Text: Not recommended for new design. Alternative is FZT789A DPLS325E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Features N •        Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70m at 3A High DC Current Gain hFE > 200 at IC = 2A


    Original     		PDF FZT789A DPLS325E DNLS320E) OT-223 OT-223 J-STD-020D DS31327

    10 amp npn power transistors

    Abstract: pnp 200v Central Electronic Central Semiconductor datasheets 140v NPN CTLT853-M833 CTLT953-M833 TLM833
    Text: PRODUCT announcement Low VCE SAT Power Transistors in a Tiny Leadless Module CTLT853-M833 6 Amp/200V (NPN) CTLT953-M833 5 Amp/140V (PNP) TLM833 Sample Devices features available • High Voltage (200V NPN, 140V PNP) upon request. • High Current (IC = 6.0A NPN, 5.0A PNP)


    Original     		PDF CTLT853-M833 Amp/200V CTLT953-M833 Amp/140V TLM833 T-223 10 amp npn power transistors pnp 200v Central Electronic Central Semiconductor datasheets 140v NPN CTLT853-M833 CTLT953-M833 TLM833

    Q62702-F1246

    Abstract: Q62702-F1303
    Text: NPN Silicon High-Voltage Transistors BFN 36 BFN 38 Suitable for video output stages in TV sets and switching power supplies ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BFN 37, BFN 39 PNP ● Type Marking


    Original     		PDF Q62702-F1246 Q62702-F1303 OT-223 Q62702-F1246 Q62702-F1303

    C 38 marking code transistor

    Abstract: CZT853 417 TRANSISTOR
    Text: RY A IN IM EL PR Central CZT853 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT853 type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,


    Original     		PDF CZT853 CZT853 OT-223 CZT953 100mA 500mA 500mA 14-September 100mA, C 38 marking code transistor 417 TRANSISTOR

    MARKING npn TRANSISTOR 1k sot223

    Abstract: 417 TRANSISTOR transistor 417 C 38 marking code transistor CZT853 CZT953
    Text: Central CZT853 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT853 type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,


    Original     		PDF CZT853 CZT853 CZT953 OT-223 30-January 100mA, 50MHz MARKING npn TRANSISTOR 1k sot223 417 TRANSISTOR transistor 417 C 38 marking code transistor CZT953

    PNP TRANSISTOR "SOT89" marking pr

    Abstract: CXT853 sot-89 marking code CXT953 sot-89 marking 22 sot-89 marking code pr TRANSISTOR marking ar code
    Text: RY A IN IM EL PR Central CXT853 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT853 type is a high current, high voltage silicon NPN transistor. Packaged in the SOT-89 surface mount case, the


    Original     		PDF CXT853 CXT853 OT-89 CXT953 500mA 100mA, PNP TRANSISTOR "SOT89" marking pr sot-89 marking code CXT953 sot-89 marking 22 sot-89 marking code pr TRANSISTOR marking ar code

    Untitled

    Abstract: No abstract text available
    Text: DMN3210 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR UNDER DEVELOPMENT Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B C G TOP VIEW S


    Original     		PDF DMN3210 OT-23 OT-23, J-STD-020A MIL-STD-202, OT-23 3000/Tape com/datasheets/ap02007 DS30388

    TRANSISTOR BC 545

    Abstract: No abstract text available
    Text: DMN3410 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed BC G TOP VIEW Mechanical Data · ·


    Original     		PDF DMN3410 SC-59 SC-59, J-STD-020A MIL-STD-202, DMN3410-7 3000/Tape com/datasheets/ap02007 DS30375 TRANSISTOR BC 545

    Untitled

    Abstract: No abstract text available
    Text: DMN3210 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B C G TOP VIEW S Mechanical Data


    Original     		PDF DMN3210 OT-23 OT-23, J-STD-020A MIL-STD-202, DMN3210-7 OT-23 3000/Tape com/datasheets/ap02007 DS30388

    DMN3210

    Abstract: J-STD-020A
    Text: DMN3210 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODELS: DMN3210 Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B


    Original     		PDF DMN3210 OT-23 OT-23, J-STD-020A MIL-STD-202, DS30388 DMN3210 J-STD-020A

    TRANSISTOR BC 208

    Abstract: DMN3410 J-STD-020A marking xy
    Text: DMN3410 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODELS: DMN3410 Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed BC G TOP VIEW


    Original     		PDF DMN3410 SC-59, J-STD-020A MIL-STD-202, SC-59 DS30375 TRANSISTOR BC 208 DMN3410 J-STD-020A marking xy

    TRANSISTOR BC 545

    Abstract: 25C03
    Text: DMN3410 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed BC G TOP VIEW Mechanical Data · ·


    Original     		PDF DMN3410 SC-59 SC-59, J-STD-020A MIL-STD-202, DMN3410-7 3000/Tape com/datasheets/ap02007 DS30375 TRANSISTOR BC 545 25C03

    Untitled

    Abstract: No abstract text available
    Text: DMN3210 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B C G TOP VIEW S Mechanical Data


    Original     		PDF DMN3210 OT-23 OT-23, J-STD-020A MIL-STD-202, DMN3210-7 OT-23 3000/Tape com/datasheets/ap02007 DS30388

    PD0026

    Abstract: transistor C 4429 equivalent AO4429 AO4429L PD-002 aos Lot Code Week
    Text: AO4429 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4429 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard


    Original     		PDF AO4429 AO4429 AO4429L AO4429L PD-00268 PD0026 transistor C 4429 equivalent PD-002 aos Lot Code Week

    C 38 marking code transistor

    Abstract: CTLT853-M833 CTLT953-M833 TLM833
    Text: CTLT853-M833 SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR TM TINY LEADLESS MODULE Top View Bottom View TLM833 CASE MARKING CODE: CHA3 PNP COMPLEMENT: CTLT953-M833 MAXIMUM RATINGS: TA=25°C Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT853-M833 is a high


    Original     		PDF CTLT853-M833 TLM833 CTLT953-M833 CTLT853-M833 OT-223 100mA, 50MHz 10-November C 38 marking code transistor CTLT953-M833

    transistor marking code mp1 SOT-23

    Abstract: DMP2130LDM J-STD-020A DMP2130L
    Text: DMP2130LDM P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • Mechanical Data • • • • Low RDS ON : • 80 mΩ @VGS = -4.5V • 110 mΩ @VGS = -2.7V • 130 mΩ @VGS = -2.5V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3)


    Original     		PDF DMP2130LDM AEC-Q101 OT-26, J-STD-020A MIL-STD-202, OT-26 DS31118 transistor marking code mp1 SOT-23 DMP2130LDM J-STD-020A DMP2130L

    N3C SOT

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon High-Voltage Transistors BFN 36 BFN 38 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 37, BFN 39 PNP Type


    OCR Scan     		PDF Q62702-F1246 Q62702-F1303 OT-223 BFN36 N3C SOT

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon High-Voltage Transistors BFN 36 BFN 38 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 37, BFN 39 PNP Type


    OCR Scan     		PDF Q62702-F1246 Q62702-F1303 OT-223 E35LDS A535bDS fl235b05