2N6770 JANTXV
Abstract: 2N6764 JANTX 2N6764 2N6766 2N6768 2N6770 JANTXVHCA2N6766
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 December 2001. MIL-PRF-19500/543F 7 September 2001 SUPERSEDING MIL-PRF-19500/543E 5 August 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON
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MIL-PRF-19500/543F
MIL-PRF-19500/543E
2N6764,
2N6766,
2N6768,
2N6770,
2N6770 JANTXV
2N6764 JANTX
2N6764
2N6766
2N6768
2N6770
JANTXVHCA2N6766
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2N7383
Abstract: 2n7382 615C
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 June 2007. MIL-PRF-19500/615D 14 March 2007 SUPERSEDING MIL-PRF-19500/615C 6 October 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR,
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MIL-PRF-19500/615D
MIL-PRF-19500/615C
2N7382
2N7383,
MIL-PRF-19500.
2N7383
615C
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transistors 547C
Abstract: 2N6660 JANTX 2N6660 2N6661 Transistor 547c
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 September 2009. MIL-PRF-19500/547C 24 June 2009 SUPERSEDING MIL-PRF-19500/547B 30 July 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL,
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MIL-PRF-19500/547C
MIL-PRF-19500/547B
2N6660
2N6661,
MIL-PRF-19500.
transistors 547C
2N6660 JANTX
2N6661
Transistor 547c
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TRANSISTOR J 5804
Abstract: j 5804 transistor j 5804 8205 A mosfet transistor 5910 6811 brushless pwm ac chopper 8205 dual mosfet BIT 3195 TMIS-3185/480/3P
Text: TABLE OF CONTENTS General Information . page 2 Product Selection Guides • ■ ■ ■ ■ ■ ■ ■ Power Sink Drivers . 3
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2N7291
Abstract: 2N7295 c 3421 transistor 2N7293 FRK150 frk450
Text: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 October 2004. MIL-PRF-19500/606B 28 July 2004 SUPERSEDING MIL-PRF-19500/606A 6 February 1998 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE ONLY
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MIL-PRF-19500/606B
MIL-PRF-19500/606A
2N7291,
2N7293,
2N7295,
2N7297,
MIL-PRF-19500.
2N7291
2N7295
c 3421 transistor
2N7293
FRK150
frk450
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2N6660 JANTX
Abstract: 2N6660 2N6661 MIL-PRF19500
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 October 1999 INCH-POUND MIL-PRF-19500/547B 30 July 1999 SUPERSEDING MIL-S-19500/547A 20 January 1988 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL,
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MIL-PRF-19500/547B
MIL-S-19500/547A
2N6660
2N6661
2N6660 JANTX
2N6661
MIL-PRF19500
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: 2N7336 IRFG6110 MO-036AB
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 February 2004. INCH-POUND MIL-PRF-19500/598B 5 November 2003 SUPERSEDING MIL-PRF-19500/598A 24 November 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR,
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MIL-PRF-19500/598B
MIL-PRF-19500/598A
2N7336,
MIL-PRF-19500R
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
2N7336
IRFG6110
MO-036AB
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2N7422
Abstract: 2N7423 2N7422U 662C IRHM9150 2N7422 2N7423U 2n742
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 January 2009. MIL-PRF-19500/662C 22 October 2008 SUPERSEDING MIL-PRF-19500/662B 16 January 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED
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MIL-PRF-19500/662C
MIL-PRF-19500/662B
2N7422,
2N7422U,
2N7423,
2N7423U,
MIL-PRF-19500.
2N7422
2N7423
2N7422U
662C
IRHM9150 2N7422
2N7423U
2n742
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2N7389
Abstract: 2N7390 2N7390U 2N7389U 2N7389 DATASHEET c 3421 transistor
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 March 2008. MIL-PRF-19500/630E 19 December 2007 SUPERSEDING MIL-PRF-19500/630D 30 March 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON,
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MIL-PRF-19500/630E
MIL-PRF-19500/630D
2N7389,
2N7390,
2N7389U,
2N7390U,
MIL-PRF-19500.
2N7389
2N7390
2N7390U
2N7389U
2N7389 DATASHEET
c 3421 transistor
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2N6804
Abstract: 2N6806 IRF9130 IRF9131 IRF9132 IRF9133 2n6806 jantx MIL-PRF-19500/558D
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 November 2010. MIL-PRF-19500/562E 26 August 2010 SUPERSEDING MIL-PRF-19500/562D 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON,
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MIL-PRF-19500/562E
MIL-PRF-19500/562D
2N6804
2N6806
MIL-PRF-19500.
2N6806
IRF9130
IRF9131
IRF9132
IRF9133
2n6806 jantx
MIL-PRF-19500/558D
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2N6782U
Abstract: 556j 2N6782 2N6784 2N6786 IRFE112 2N6782 equivalent 2N6786U
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 September 2009. MIL-PRF-19500/556J 16 June 2009 SUPERSEDING MIL-PRF-19500/556H 12 December 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,
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MIL-PRF-19500/556J
MIL-PRF-19500/556H
2N6782,
2N6782U,
2N6784,
2N6784U,
2N6786,
2N6786U,
MIL-PRF-19500.
2N6782U
556j
2N6782
2N6784
2N6786
IRFE112
2N6782 equivalent
2N6786U
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CMF65-5.556K
Abstract: No abstract text available
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 March 2011. MIL-PRF-19500/556K 27 December 2010 SUPERSEDING MIL-PRF-19500/556J 16 June 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,
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MIL-PRF-19500/556K
MIL-PRF-19500/556J
2N6782,
2N6782U,
2N6784,
2N6784U,
2N6786,
2N6786U,
MIL-PRF-19500.
CMF65-5.556K
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2N7380
Abstract: 2N7381 T0-257AA
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 May 2002. INCH-POUND MIL-PRF-19500/614B 22 February 2002 SUPERSEDING MIL-PRF-19500/614A 3 May 1996 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR,
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MIL-PRF-19500/614B
MIL-PRF-19500/614A
2N7380
2N7381
2N7381
T0-257AA
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2N6760 equivalent
Abstract: 2N6758 equivalent 2N6756 2N6758 2N6760 2N6762 IRF130 IRF230 Transistor irf230 104-2 substitution
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 July 2010. MIL-PRF-19500/542H 26 April 2010 SUPERSEDING MIL-PRF-19500/542G 8 September 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL,
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MIL-PRF-19500/542H
MIL-PRF-19500/542G
2N6756,
2N6758,
2N6760,
2N6762,
MIL-PRF-19500.
2N6760 equivalent
2N6758 equivalent
2N6756
2N6758
2N6760
2N6762
IRF130
IRF230
Transistor irf230
104-2 substitution
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BIT 3195 G
Abstract: TRANSISTOR 5804 transistor 5910 2878 transistor ma 8920 regulator darlington array 2804 BIT 3195 8205 A mosfet 8205 mosfet 5810-FQ
Text: Allegro MicroSystems Fax-on-Demand: 1-888-286-9288 Outside North America: 1-202-216-1827 ICs and PMCMs PRODUCT INDEX in NUMERICAL ORDER Part Number* Description 8932-A 8958 Motor Drivers Quad, 1.8 A, 50 V Darlington Power Driver Quad, 1.8 A, 50 V Darlington Power Driver
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932-A
BIT 3195 G
TRANSISTOR 5804
transistor 5910
2878 transistor
ma 8920 regulator
darlington array 2804
BIT 3195
8205 A mosfet
8205 mosfet
5810-FQ
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2n7513
Abstract: 2N7512 MOS 6888 MIL-PRF19500 ON MARKING 3161
Text: INCH-POUND MIL-PRF-19500/689 28 February 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE AND SINGLE EVENT EFFECTS TRANSISTOR, N-CHANNEL SILICON TYPES 2N7512, 2N7513, AND 2N7514 JANTXVD, R AND JANSD, R This specification is approved for use by all Departments
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MIL-PRF-19500/689
2N7512,
2N7513,
2N7514
MIL-PRF-19500.
2n7513
2N7512
MOS 6888
MIL-PRF19500
ON MARKING 3161
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2N6804
Abstract: 2N6806 MIL-PRF19500 562C
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 October 1999 INCH-POUND MIL-PRF-19500/562C 30 July 1999 SUPERSEDING MIL-S-19500/562B 7 January 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON
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MIL-PRF-19500/562C
MIL-S-19500/562B
2N6804
2N6806
2N6806
MIL-PRF19500
562C
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2N6756
Abstract: 2N6758 2N6760 2N6762 JANHCA6756 MOSFET IRF230
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 August 1998 INCH-POUND MIL-PRF-19500/542F 20 April 1998 SUPERSEDING MIL-S-19500/542E 17 August 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL,
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MIL-PRF-19500/542F
MIL-S-19500/542E
2N6756,
2N6758,
2N6760,
2N6762,
2N6756
2N6758
2N6760
2N6762
JANHCA6756
MOSFET IRF230
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Untitled
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September 2013. INCH-POUND MIL-PRF-19500/663F 21 June 2013 SUPERSEDING MIL-PRF-19500/663E 23 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS,
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MIL-PRF-19500/663F
MIL-PRF-19500/663E
2N7431,
2N7432,
2N7433,
MIL-PRF-19500.
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9307 7 segment decoder DTL
Abstract: bcd to seven segment circuit diagram Fairchild 9307 Fairchild bcd to decimal 10 pins dual seven segment display 9307 ScansUX985
Text: TTL/MSI 9307 SEVEN SEGMENT DECODER D E S C R IP T IO N — The 9 3 0 7 is a Seven Segment Decoder designed to accept four inputs in 3421 BCD code and provide the appropriate outputs to drive a seven segment numerical display. The decoder can be used w ith seven segment incandescent lamp, neon, electro-lum inescent, or C R T num eric displays.
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16-LEAD
9307 7 segment decoder DTL
bcd to seven segment circuit diagram
Fairchild 9307
Fairchild bcd to decimal
10 pins dual seven segment display
9307
ScansUX985
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2N3419
Abstract: 2N3420 2N3421 2N3418 Unitrode transistors data To5 2N3416 JANTXV2N3418 JANTXV2N3419 2n3418-2n3421 N3421
Text: POWER TRANSISTORS JAN, JANTX, JAN, JANTX, JAN, JANTX, JAN, JANTX, 3 Amp, 80V, Planar NPN & JANTXV 2N3418 & JANTXV 2N3419 & JANTXV 2N3420 & JANTXV 2N3421 FEATURES DESCRIPTION • M e e t s M IL -S -1 9 5 0 0 / 3 9 3 U n it r o d e p o w e r t r a n s is t o r s p r o v id e a u n iq u e
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JANTXV2N3418
JANTXV2N3419
2N3420
2N3421
MIL-S-19500/393
861-654D
2N3419
2N3421
2N3418
Unitrode transistors data To5
2N3416
2n3418-2n3421
N3421
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BU125S
Abstract: BFX34 BSS44 BSW68 to39
Text: POWER TRANSISTORS D E S C R IP T IO N P O L A R IT Y > o 00 o :> A 0 3 3 A TYPE Planar for switching applications < _u an d e E L/ LL J= <s > X to < _o M 3: S E > tu LÜ O CJ o ir? evi II o H@ § Q a. PACKAGE (continued) BFX34 NPN General purpose 120 60
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BFX34
BSS44
BSW68
BU125S
O-39l
3440S
to39
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c 3421 transistor
Abstract: d 3421 transistor J802
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J802 High-Pow er NPN Silicon Transistor . . . lor use as an output device in complementary audio amplifiers to 100-Watts music power per channel. • • • 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS
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100-Watts
MJ4502
c 3421 transistor
d 3421 transistor
J802
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c 3421 transistor
Abstract: GSRU20040 2n6924 gsru200 2N2891
Text: Basic Characteristics All NPN silicon bipolar power switching transistors manufactured by General Semiconductor Industries, Inc. are available in die or wafer form. General Semiconductor provides as a minimum for every chip order: A. 100% electrical probe test to low current parameters 15A max. .
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MIL-STD-750,
MIL-STD-883C,
c 3421 transistor
GSRU20040
2n6924
gsru200
2N2891
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