Untitled
Abstract: No abstract text available
Text: Crystal Clock Oscillator TCO-726DHVX 6pin J-Lead VCXO Features Absolute Maximum Ratings Parameter Supply voltage Input voltage Output voltage Output current Storage temperature CMOS logic output Ceramic package with J-Lead Voltage controlled oscillator Enable/Disable feature
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TCO-726DHVX
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KW2-281CGA
Abstract: No abstract text available
Text: LUCKY LIGHT KW2-281CGA DATA SHEET QC: Part No. ENG: KW2-281CGA Spec No. Prepared By: S/N-030815011D Page 1 of 4 LUCKY LIGHT Features ♦ 0.28"Dual Digit Super Green ♦ Common Cathode Common PIN 9 And 6PIN ♦ Gray Face，Color Segment Package Dimension:
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KW2-281CGA
S/N-030815011D
KW2-281CGlectrical
568nm)
KW2-281CGA
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GRM36
Abstract: NJG1528KC1 0105G
Text: NJG1528KC1 トランスファースイッチ GaAs MMIC •概要 NJG1528KC1 は CDMAGPS、PCS 等のデュアル、ト リプルモード端末のアンテナ切り替えに最適なトランス ファースイッチです。 高電力通過時の低損失、高アイソレーションを特徴とし
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NJG1528KC1
FLP10-C1
36dBm
31dBm,
25dBm,
GRM36
NJG1528KC1
0105G
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marking 2h sot363
Abstract: No abstract text available
Text: BGA2870 MMIC wideband amplifier Rev. 1 — 24 February 2011 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.
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BGA2870
OT363
marking 2h sot363
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MA126
Abstract: No abstract text available
Text: 2SK1478 Switching Diodes MA126 Silicon epitaxial planer type Unit : mm For switching circuits +0.25 0.65±0.15 Symbol +0.1 +0.1 4 3 +0.1 0 to 0.05 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C Parameter 2 0.16–0.06 1.1–0.1 +0.2 High voltage resistance VR : 80V
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2SK1478
MA126
MA126
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3072 rohm
Abstract: No abstract text available
Text: Middle Power Class-D Speaker Amplifiers Class-D Speaker Amplifier for Digital Input BD5451EFV No.11075EAT17 ●Description BD5451EFV is a Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power consumption, delivers an output power of 15W+15W. This IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD
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BD5451EFV
11075EAT17
BD5451EFV
R1120A
3072 rohm
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GRM188B11E104KA01D
Abstract: bd5451
Text: BD5451EFV Middle Power Class-D Speaker Amplifiers Class-D Speaker Amplifier for Digital Input BD5451EFV No.11075EAT17 ●Description BD5451EFV is a Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power consumption, delivers an output power of 15W+15W. This IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD
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BD5451EFV
11075EAT17
BD5451EFV
R1120A
GRM188B11E104KA01D
bd5451
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GRM188B11E104KA01D
Abstract: 3072 rohm
Text: Middle Power Class-D Speaker Amplifiers Class-D Speaker Amplifier for Digital Input BD5451EFV No.11075EAT17 ●Description BD5451EFV is a Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power consumption, delivers an output power of 15W+15W. This IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD
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BD5451EFV
11075EAT17
BD5451EFV
R1120A
GRM188B11E104KA01D
3072 rohm
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marking m2i
Abstract: MA125
Text: 2SK1406 Switching Diodes MA125 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.5 –0.05 1 +0.1 +0.1 6 2 4 3 +0.1 0.16–0.06 +0.2 1.1–0.1 mounting 5 0.8 +0.2 2.9 –0.05 Four-element incorporated in one package, enabling high-density
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2SK1406
MA125
marking m2i
MA125
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Untitled
Abstract: No abstract text available
Text: NEC's L, S-BAND 4W UPG2009TB SPDT SWITCH FEATURES DESCRIPTION • LOW INSERTION LOSS: 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz The UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or
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UPG2009TB
BluetoothT60
IR260
VP215
WS260
HS350
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Untitled
Abstract: No abstract text available
Text: Middle Power Class-D Speaker Amplifiers Class-D Speaker Amplifier for Digital Input BD5451EFV No.11075EAT17 ●Description BD5451EFV is a Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power consumption, delivers an output power of 15W+15W. This IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD
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BD5451EFV
11075EAT17
BD5451EFV
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marking g2u
Abstract: SW SPDT 6pin VP215 HS350 UPG2009TB UPG2009TB-E3 California Eastern Laboratories gaas fet 4w
Text: NEC's L, S-BAND 4W UPG2009TB SPDT SWITCH FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz The UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or
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UPG2009TB
UPG2009TB
HS350
marking g2u
SW SPDT 6pin
VP215
HS350
UPG2009TB-E3
California Eastern Laboratories gaas fet 4w
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PG2009TB
Abstract: spdt mark s22
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The μPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion
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PG2009TB
PG2009TB
PG10191EJ02V0DS
spdt mark s22
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Untitled
Abstract: No abstract text available
Text: NEC's L, S-BAND 4W UPG2009TB SPDT SWITCH FEATURES DESCRIPTION • LOW INSERTION LOSS: 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz The UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or
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UPG2009TB
IR260
VP215
WS260
HS350
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SCH5017-NW
Abstract: AMD Athlon 64 X2 dual 4800 pin out ATI RS690 APW7120 L1117L APL1805 SCH5017 tpa 5017 C2001L C63000
Text: 8 7 6 5 4 3 2 1 SHEET ATI RS485M+SB600 Block Diagram M/B size: mm 133MHz/133MHz# 200MHz/200MHz# 266MHz/266MHz# D AMD S1 PROCESSOR 638-Pin uFCPGA 638 DDR II 400/533/667 17,18 HyperTransport LINK0 16x16 17,18 200-PIN DDR2 SODIMM LVDS CON 11 EXTERNAL CLOCK GENERATOR
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RS485M
SB600
318MHz
133MHz/133MHz#
200MHz/200MHz#
266MHz/266MHz#
638-Pin
16x16
ICS951462
200-PIN
SCH5017-NW
AMD Athlon 64 X2 dual 4800 pin out
ATI RS690
APW7120
L1117L
APL1805
SCH5017
tpa 5017
C2001L
C63000
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Untitled
Abstract: No abstract text available
Text: BGA2818 MMIC wideband amplifier Rev. 4 — 9 December 2014 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.
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BGA2818
OT363
BGA2818
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Untitled
Abstract: No abstract text available
Text: BGA2818 MMIC wideband amplifier Rev. 2 — 1 May 2012 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.
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BGA2818
OT363
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Untitled
Abstract: No abstract text available
Text: BGA2818 MMIC wideband amplifier Rev. 3 — 19 August 2013 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.
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BGA2818
OT363
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UPG2009TB-A
Abstract: SW SPDT 6pin UPG2009TB HS350 UPG2009TB-E3-A VP215
Text: NEC's L, S-Band HIGH POWER UPG2009TB SPDT Switch FEATURES DESCRIPTION • • • • NEC's UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, with low insertion
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UPG2009TB
UPG2009TB
UPG2009TB-A
SW SPDT 6pin
HS350
UPG2009TB-E3-A
VP215
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kb910qf c1
Abstract: KB910QF PCI7412 LA-3011P 3011P TCD42A SLB9635TT1.2 ICS954305 KB910QF compal compal
Text: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile Yonah uFCPGA with Intel Calistoga_PM+ICH7-M core logic 2005-08-26 3 3 REV:0.2 4 4 Compal Secret Data Security Classification 2005/06/01 Issued Date 2006/06/01 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL
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LA-3011P
945GM
82573E
82573E@
TST1284B-LF
LA-3011P
PCI8412
PCI8412@
HT-297DQ/GQ
kb910qf c1
KB910QF
PCI7412
3011P
TCD42A
SLB9635TT1.2
ICS954305
KB910QF compal
compal
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Untitled
Abstract: No abstract text available
Text: 3875081 G E S O L I D STATE 01 E D 19830 Optoelectronic Specifications _ V 7 HARRI S SEMICOND SECTOR 3 7E » Ml 4305571 Photon Coupled Isolator C N Y 30-C N Y 34 Ga As Infrared Emitting Diode & Light Activated SCR T he G E Solid S tate CNY30 and C NY34 consist o f a gallium arsenide,
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CNY30
S-429S
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958M
Abstract: No abstract text available
Text: Panasonic GaAs MMICs GN01059B GaAs IC with b u ilt-in fe rro e le ctric D is trib u tin g a m p lifie r • • • Features High-isolation distribution amplifier High-gain Low consumption current Small package: Mini 6pin ■ A b s o lu te M a xim u m R atings (Ta = 25°C)
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GN01059B
23dBm
1015M
958M
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Untitled
Abstract: No abstract text available
Text: ISOCON COnPONENTS LTD 7SC D • 4fiât510 g HO 7 " V/- £7 CNY 30, CNY 34 OPTICALLY COUPLED SCR ISOLATORS •• v a v . . ^ * ¿■i'-'a , Y*. ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted Storage to + 150
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450mW
200fl
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR juPA828TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD FEATURES • PACKAGE DRAWINGS (Unit: mm) Low noise NF = 1.3 dB TYP. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz
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juPA828TF
2SC5184)
PA828TF-T
PA828TF
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