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    C 2851 TRANSISTOR Search Results

    C 2851 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C 2851 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2851-1 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Untitled

    Abstract: No abstract text available
    Text: 2851-2 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF Freq40M time100n

    Untitled

    Abstract: No abstract text available
    Text: 2851-3 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF Freq40M time100n

    EN2851

    Abstract: 2SC4428 D1898
    Text: Ordering number:EN2851 NPN Triple Diffused Planar Silicon Transistor 2SC4428 800V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed tf : 0.1µs typ . · Wide ASO. · Adoption of MBIT process.


    Original     		PDF EN2851 2SC4428 00V/6A 2039D 2SC4428] EN2851 2SC4428 D1898

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN2851 NPN Triple Diffused Planar Silicon Transistor 2SC4428 800V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed tf : 0.1µs typ . · Wide ASO. · Adoption of MBIT process.


    Original     		PDF ENN2851 2SC4428 00V/6A 2039D 2SC4428]

    pg 3 ab

    Abstract: CM2851ACIM25 CM2851SIM25
    Text: CM2851 150mA CMOS LDO WITH EN & PG GENERAL DESCRIPTION FEATURES The CM2851 family is positive, linear regulators featured low ! Very Low Dropout Voltage quiescent current 30µA typ. with low dropout voltage, ! Low Current Consumption: Typ. 30µA, Max. 35µA


    Original     		PDF CM2851 150mA CM2851 OT-23-5 pg 3 ab CM2851ACIM25 CM2851SIM25

    Untitled

    Abstract: No abstract text available
    Text: CM2851 150mA CMOS LDO WITH EN & PG GENERAL DESCRIPTION FEATURES The CM2851 family is positive, linear regulators featured low ! Very Low Dropout Voltage quiescent current 30µA typ. with low dropout voltage, ! Low Current Consumption: Typ. 30µA, Max. 35µA


    Original     		PDF CM2851 150mA CM2851 OT-23-5

    C 2851 transistor

    Abstract: 2SC4428 2851 transistor npn
    Text: Ordering number: EN 2851 _ 2 S C 4 4 2 8 No.2851 N P N Triple Diffused Plan ar Silicon Transistor Sw itching R egulator Applications F eatu res . High breakdown voltage, high reliability •Fast switching speed tf: O.lps typ •W ide A SO •Adoption of M B IT process


    OCR Scan     		PDF 2SC4428 300ps C 2851 transistor 2851 transistor npn

    Untitled

    Abstract: No abstract text available
    Text: Z * EX4R XR-2851 PRELIMINARY INFORMATION Ground Fault Interrupter FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR -2851 G ro u n d F a u lt In te rru p te r is designed to be used in c irc u its p ro vid in g g rou n d fa u lt p ro te c tio n fo r A C


    OCR Scan     		PDF XR-2851 XR-1568M XR-1568/XR-1468C XR-1468/1568

    2n3298

    Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
    Text: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max


    OCR Scan     		PDF 2N1613 2N16I3A 2N1613B 2N17I1 2N17IIA 2N3725A 2N3947 2N40B0 2N4137 2N4207 2n3298 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888

    2851 transistor npn

    Abstract: A1409-1 Transistor A14 2N2907 A-04 a1-4095 PNP 2N2907
    Text: ALLE6R0 MICROSYSTEMS INC T3 D • D50433fl G003b47 7 ■ ALGR PROCESS BDA 9 / “0/ Process BDA PNP Small-Signal Transistor A general-purpose PNP transistor, Process BDA is used as a low-noise, high-gain amplifier and as a medium-power switcher at frequencies from dc to


    OCR Scan     		PDF 0S0433Ã CI003L -H053 2851 transistor npn A1409-1 Transistor A14 2N2907 A-04 a1-4095 PNP 2N2907

    2851 transistor npn

    Abstract: C 2851 transistor 2SC4428 EN2851 1S001 transistor 800v
    Text: Ordering number: EN 2851 2SC4428 NPN Triple Diffused Planar Silicon Transistor SM YO l i 800V/6A Switching Regulator Applications F e a tu re s . High breakdown voltage, high reliability • F ast switching speed tf: 0.1 ps typ •W ideASO • Adoption of MBIT process


    OCR Scan     		PDF 2SC4428 00V/6A 300ps 2851 transistor npn C 2851 transistor 2SC4428 EN2851 1S001 transistor 800v

    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


    OCR Scan     		PDF 00DDS7Ã T-A7-01 2N497 12/3S 30/S9 2N3725A 2N3947 2N4080 2N4137 2N4207 2N9308 2N221BA 2N69S 2N3304 2M2193 2NI893 2N236S 2N408 2N238

    transistor k 2843

    Abstract: K 2843 2SC2832 transistor k 2837 transistor 2839
    Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 860MHz, transistor k 2843 K 2843 2SC2832 transistor k 2837 transistor 2839

    Untitled

    Abstract: No abstract text available
    Text: 3875081 01E G E S O L I D STATE 19820 Optoelectronic S pecifications_ H A R R IS S E fllC O N D SECTOR 37E D • 43Q2571 00272ÖH 0 ■ T- V/- 8 3 Photon Coupled Isolator CNX35, CNX36 G a As Infrared Emitting Diode & N PN Silicon Photo-Transistor


    OCR Scan     		PDF 43Q2571 CNX35, CNX36 92CS-42662 92CS-429S1

    MRF838

    Abstract: MRF838a
    Text: MOTOROLA SEMICONDUCTOR MRF838 MRF838A TECHNICAL DATA The RF Line 1 W — 870 M Hz RF POWER TRANSISTORS N P N S IL IC O N NPN SILICON RF POWER TRANSISTORS . . . d e s i g n e d f o r 12.5 v o lt UHF la rg e -s ig n a l, c o m m o n - e m itte r a m p lifie r a p p lic a tio n s in in d u s tr ia l a n d c o m m e rc ia l FM e q u ip m e n t


    OCR Scan     		PDF MRF838 MRF838A MRF838, MRF838a

    BGY90B

    Abstract: VS1M VSI drive mw 137 A-04 a2849
    Text: N AMER PHILIPS/DISCRETE ObE J> DEVELOPMENT DAi Ai • ” b 1353^31 Q 0 1 3 H Û Û * JJ-iJ L .U U .J I BGY90B This data sheat contains advanc« in form ation and specifications are subject to change w ith o u t notice. V of U.H.F. POWER MODULE The B G Y 9 0 B is a two stage u.h.f. power module designed for use in mobile transmitting equipment


    OCR Scan     		PDF BGY90B BGY90B VS1M VSI drive mw 137 A-04 a2849

    MRFA2604

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRFA2604 Broadband R.F. Array for TV Transm itter The MRFA2604 is a solid state class AB am plifier specifically designed for TV transposers and transmitters. This am plifier incorporates microstrip technology


    OCR Scan     		PDF MRFA2604 J/230 MRFA2604

    Untitled

    Abstract: No abstract text available
    Text: Whnl mL'nM HP Ea Wc kL aE rTdT Surface Mount Zero Bias Schottky Detector Diodes Technical Data Features • Surface M ount SOT-23/ SOT-143 Package • H igh D etection Sensitivity: Package Lead Code Identification Top V iew 40 mV/|iW at 915 MHz 30 mV/jiW at 2.45 GHz


    OCR Scan     		PDF OT-23/ OT-143 HSMS-285X HSMS-285X OT-23 OT143 DD127Ã 5963-2333E 5963-5030E

    HSMS2851

    Abstract: 3BT SOT-23 sot 23 marking code rad transistor tag 306 marking 2u sma microstrip RFID tag HSMS-2851 HSMS2850 HSMS-285X
    Text: Whpt HEW LETT WLk M PACKARD Surface Mount Zero Bias Schottky D etector D iodes Technical Data HSMS-285X S eries F ea tu res • Surface Mount SOT-23/ SOT-143 Package • H igh D etection Sensitivity: 40 mV/fiW at 915 MHz 30 mV/|iW at 2.45 GHz 22 mV/|uW at 5.80 GHz


    OCR Scan     		PDF HSMS-285X OT-23/ OT-143 5SOT-23 OT-23 OT143 5963-0917E 5963-2333E HSMS2851 3BT SOT-23 sot 23 marking code rad transistor tag 306 marking 2u sma microstrip RFID tag HSMS-2851 HSMS2850

    D1314

    Abstract: SN75361 207B SN75107A SN75107B SN75207 SN75207B SN55109A
    Text: SN75207, SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS S LLS Q 69A - D1314, JULY 1973 - REVISED JANUARY 1993 □ O R N PACKAGE TO P V IE W Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics


    OCR Scan     		PDF SN75207, SN75207B SLLSQ69A- D1314, SN75107A SN75107B 10-mV SN55109A, SN75109A, D1314 SN75361 207B SN75207 SN55109A

    2H2222A

    Abstract: 2MM72 2N2696 2N2708 2N2312 2n2959 2n708s 2N2195B
    Text: jomitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon small signal transistors Maximum Ratings Oevke Type Package Pd Ambient mW 2*497 2N498 2MS6 2m i mat mn mat mm NPN NPN NPN NPN NPN TO TO TO TO TO 5 5 5 5 5 800 BOO BOO 800 600 E le c tfiu r il ChaiacTu fis ti! s


    OCR Scan     		PDF 2N498 2MM72 2N37W 2N372S 2N4072 2H2222A 2N2696 2N2708 2N2312 2n2959 2n708s 2N2195B

    29T1

    Abstract: H066300T
    Text: HD66300T Horizontal Driver for TFT-Type LCD Color TV HITACHI Description The HD66300T is a horizontal driver used for TFT-type (Thin Film Transistor) LCD color TVs. Specifically, it drives the drain bus signals of a TFT-type LCD panel. The HD66300T receives as input three video signals R, G, B, and their inverted signals R, G and B.


    OCR Scan     		PDF HD66300T HD66300T 29T1 H066300T

    8893 single chip tv processor

    Abstract: transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn12510 mn662741
    Text: Application Block Diagrams • Video Applications VC R System Remote Control Transmission MN171608/9 MN15*13 LN66A I Display I Cylinder Motor Drive AN3813/14/15 f FL Dr MN12510 Capstan Motor Drive AN3840N V r I Remote Control Reception}] MN6750*8/9/6755—7


    OCR Scan     		PDF MN171608/9 LN66A MN12510 AN3813/14/15 AN3840N PNA4601M MN187* MN6750* AN3126/29 AN5179/82N 8893 single chip tv processor transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn662741