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    C 2811 TRANSISTOR Search Results

    C 2811 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    C 2811 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC4452

    Abstract: EN2811
    Text: Ordering number:EN2811 NPN Epitaxial Planar Silicon Transistor 2SC4452 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacity.


    Original     		PDF EN2811 2SC4452 2SC4452applied 2059B 2SC4452] 2SC4452 EN2811

    2SC4452

    Abstract: ITR06977 ITR06978 ITR06979
    Text: Ordering number:ENN2811 NPN Epitaxial Planar Silicon Transistor 2SC4452 High-Speed Switching Applications Features Package Dimensions • High-speed switching. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacity.


    Original     		PDF ENN2811 2SC4452 2059B 2SC4452] 2SC4452 ITR06977 ITR06978 ITR06979

    bc577

    Abstract: AGC OPA660 2N5460 simulation model ca3080 agc 2N5460 ca3080 1N4148 2N3904 AB-185 OPA621
    Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


    Original     		PDF OPA660 bc577 AGC OPA660 2N5460 simulation model ca3080 agc 2N5460 ca3080 1N4148 2N3904 AB-185 OPA621

    bc577

    Abstract: BC577 transistor AGC OPA660 TRANSISTOR BC577 OPA660 ca3080 agc 2N5460 simulation model operational amplifier discrete schematic Transistor DG 44 1N4148
    Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


    Original     		PDF OPA660 bc577 BC577 transistor AGC OPA660 TRANSISTOR BC577 OPA660 ca3080 agc 2N5460 simulation model operational amplifier discrete schematic Transistor DG 44 1N4148

    Untitled

    Abstract: No abstract text available
    Text: Section 28. WDT and SLEEP Mode HIGHLIGHTS 28 This section of the manual contains the following major topics: Introduction . 28-2 Control Register . 28-3


    Original     		PDF AN607 PIC18CXXX. com/10/faqs/codeex/ DS39529A-page PIC18C

    AN607

    Abstract: PIC18CXXX
    Text: Section 28. WDT and SLEEP Mode HIGHLIGHTS This section of the manual contains the following major topics: 28.1 28.2 28.3 28.4 28.5 28.6 28.7 28.8 Introduction . 28-2


    Original     		PDF AN607 PIC18CXXX. com/10/faqs/codeex/ DS39529A-page PIC18C AN607 PIC18CXXX

    Untitled

    Abstract: No abstract text available
    Text: TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGHĆSPEED MOSFET DRIVERS SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004 D Industry-Standard Driver Replacement D 25-ns Max Rise/Fall Times and 40-ns Max TPS2811, TPS2812, TPS2813 . PACKAGES TOP VIEW


    Original     		PDF TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 SLVS132F 25-ns 40-ns

    PS2814

    Abstract: No abstract text available
    Text: TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGHĆSPEED MOSFET DRIVERS SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004 D Industry-Standard Driver Replacement D 25-ns Max Rise/Fall Times and 40-ns Max TPS2811, TPS2812, TPS2813 . PACKAGES TOP VIEW


    Original     		PDF TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 SLVS132F 25-ns 40-ns PS2814

    Untitled

    Abstract: No abstract text available
    Text: G5800 Global Mixed-mode Technology Inc. GSM Power Management System Features „ „ „ „ „ „ „ „ „ „ „ „ „ General Description Handles all GSM Baseband Power Management 2.8V to 5.5V Input Range Charger Input up to 15V Seven LDOs Optimized for Specific GSM Subsystems


    Original     		PDF G5800 48-Pin G5800 QFN7X7-48

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-61 PACKA G E N PN V cE O Ic s u s (m ax ) VOLTS A M PS 2N 1724 80 5 2 0 -9 0 @ 1 5 1@ 2N 1724A 120 5 2N 1725 80 2N 2811 D E V IC E TY PE ^FE@ IC/ V ce ( m in /m a x @ A /V ) ^ C E (sa t) @ If/IB (V @ A /A )


    OCR Scan     		PDF

    2SC4452-2

    Abstract: 10PA 2SC44 2SC4452 T500
    Text: Ordering number: EN 2811 2SC4452 No.2811 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • Fast switching speed • Low collector saturation voltage •High gain-bandwidth product ■Small collector capacity • Very small-sized package permitting the 2SC4452-applied sets to be made small and slim


    OCR Scan     		PDF 2SC44 2SC4452-applied 2SC4452-2 10PA 2SC4452 T500

    a/TO111

    Abstract: No abstract text available
    Text: BIPOLAR NPN PLANAR POWER TRANSISTORS TO-111 1 f1 TO-59 VCE sat max VOLTS •c @ ' b 2N2877 50 5.0 20- 60 1.0/2.0 2.0 5.0/0.5 2N2878 50 5.0 40-120 1.0/2.0 2.0 5.0/0.5 2N2879 70 5.0 20- 60 1.0/2.0 2.0 5.0/0.5 ’ 2N3996* 80 5.0 40-120 1.0/2.0 0.25 1.0/0.1


    OCR Scan     		PDF O-111 2N2877 2N2878 2N2879 2N3996* 2N3997* 2N2880* 2N3998* 2N3999* 2N2812* a/TO111

    HSCH-1001

    Abstract: 5082-2815 1N5165 5082-2970 5082-2813 5082-2805 1N5167 5082-2370 5082-2814 HSCH-1001 5082-2800
    Text: COMPONENTS SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS SCHOTTKY BARRIER DIODES & HIGH CONDUCTANCE DIODES H E W L E T T ^ PACKARD 5082-2301/02/03/05 5082-2800 1N5711 5082- 2810(1N5712) 5O 82-2811(1N5713)0 5082-2835 5082-2900 HSCH-1001(1N6263)


    OCR Scan     		PDF 1N5711) 1N5712) 1N5713) HSCH-1001 1N6263) HSCH-1001. DO-35) 5082-2815 1N5165 5082-2970 5082-2813 5082-2805 1N5167 5082-2370 5082-2814 HSCH-1001 5082-2800

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Pulse Power Transistor . . . designed for 10 2 5 -1 1 5 0 MHz pulse com mon base am plifier applications such as TCAS, TACAN and M o de-S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 W alts Peak


    OCR Scan     		PDF MRF10500 MRF10150

    SOT223 Package

    Abstract: MARKING npn TRANSISTOR 1k sot223 MOTOROLA TRANSISTOR P1D
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT-223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Rating Symbol Value U nit Collector-Emitter Voltage Open Base


    OCR Scan     		PDF PZTA42T1 OT-223 318E-04, O-261AA PZTA64T1 SOT223 Package MARKING npn TRANSISTOR 1k sot223 MOTOROLA TRANSISTOR P1D

    5082-2815

    Abstract: 5082-2970 HSCH-1001 diode hp 2835 schottky 5082-2370 5082-2997 diode hp 2811 HSCH-1001 5082-2800 5082-2813 5082-2805
    Text: ^5ñ d ÉT| 4 4 4 7 £ ú 4 DDGaf l 31 3 4 4 4 7 5 8 ^ H E WL E T T - P A C K A R D » m 5 8C CMPNTS HEWLETT PACKARD 02831 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS d T-07 -*7 1N5711* 1N5712* 5082-2301 5082-2302 5082-2303 5082-2305 5082-2800/10/11/35*


    OCR Scan     		PDF 1N5711* 1N5712* HSCH-1001 1N6263I* 1N5711, 1N5712, 1N5711 1N5711) 5082-2815 5082-2970 HSCH-1001 diode hp 2835 schottky 5082-2370 5082-2997 diode hp 2811 HSCH-1001 5082-2800 5082-2813 5082-2805

    2SC2802

    Abstract: 2808 transistor n2818
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF Te-25 2SC2802 2808 transistor n2818

    5082-2815

    Abstract: 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912
    Text: HEWLETT-PACKARD i CMPNTS HEWLETT PACKARD 20E D E3 4 447584 OOOSfc.37 0 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 0,41 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS


    OCR Scan     		PDF 0005fc 1N5711 1N5712 1N5711, 1N5712, i712- 1n57h 1n5712 5082-2815 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912

    2SC4452

    Abstract: QVC5 Q60H
    Text: SANYO SEMICONDUCTOR CORP S2E D 7=^707!= G Q 0 7 1 D 1 Q T-3S -0 ? 2SC4452 • N P N Epitaxial Planar Silicon Transistor 20S9 High-Speed Switching Applications 2811 F e a tu re s • F ast switching speed • Low collector saturation voltage • High gain-bandwidth product


    OCR Scan     		PDF G007101 2SC4452 -T-35-07 2SC4452-applied QVC5 Q60H

    5082-2815

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD. CUPNTS HEWLETT PACKARD 20E D B 44475fi4 OOQSt.37 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 0.41 D a 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS


    OCR Scan     		PDF 44475fi4 1N5711 1N5712 1N5711, 1N5712, Figure12. 5082-2815

    trw62601

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Power O scillator TVansistor . . . designed for use as power oscillators at frequencies to 3.0 GHz with typical output power of over 1.0 watt. • Operation to 3.0 GHz • High Output Power 1.2 W Typ @ 2.5 GHz


    OCR Scan     		PDF TRW62601 28A-03, GP-13) TP62601 trw62601

    ULN2803N

    Abstract: ULN2800 ULN2804N ULN2803D ULN2010 uln2004 application note ULN2020 ULN2000 ULN2801N ULN2803-D
    Text: IN TEG RATED POWER &2 D Ë MflaSÛTÛ □□□□SSS 1 | ~ jK K V : 4825898 INTEGRATED POWER 'M Y E 82D 002 52 D Darlington Transistor Arrays D , . SEMICONDUCTORS LTD Features Description ' 7 or 8 darlington power drives In single package 50V or 95V breakdown voltage


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    MRF650

    Abstract: No abstract text available
    Text: MOTOROLA wm S E M IC O N D U C T O R TECHNICAL DATA M R F6 50 The RF Line 2 N P N S il i c o n R F P o w e r T r a n s is t o r 50 WATTS, 512 MHz RF POWER TRANSISTOR NPN SILICON . . designed fo r 12.5 V o lt UHF large-signal a m p lifie r a pp licatio n s in ind u stria l and


    OCR Scan     		PDF MRF650 MRF650

    philips 433-2 npn

    Abstract: handbook philips ic26 Philips Components, Soft Ferrites Data Handbook M philips hybrid amplifier OM modules display dc05 Philips IC20 4 linear handbook philips semiconductor data handbook 4000 series CMOS Logic ICs Magnetic Products, Soft Ferrites, Data Handbook M
    Text: Philips Semiconductors Data handbook system Appendix A DATA HANDBOOK SYSTEM Discrete Semiconductors Philips Semiconductors data handbooks contain all pertinent data available at the time of publication and each is revised and reissued regularly. Book Title


    OCR Scan     		PDF