STK4142II
Abstract: STK4142 ic stk4142 II 1 W stereo amplifier 236W
Text: Ordering number: EN2665B Thick Film Hybrid IC STK4142II AF Power Amplifier Split Power Supply (25W + 25W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4142II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.
|
Original
|
EN2665B
STK4142II
STK4102II
STK4142II)
STK4101V
STK4101II
STK4142II]
STK4142II
STK4142
ic stk4142 II
1 W stereo amplifier
236W
|
PDF
|
ic stk4142 II
Abstract: STK4142II c 2665 ic stk4142 2665-2 2665-3 pin diagram of ic 4040 resistor fix value STK4101II STK4101V
Text: Ordering number: EN2665B Thick Film Hybrid IC STK4142II AF Power Amplifier Split Power Supply (25W + 25W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4142II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.
|
Original
|
EN2665B
STK4142II
STK4102II
STK4142II)
STK4101V
STK4101II
STK4142II]
ic stk4142 II
STK4142II
c 2665
ic stk4142
2665-2
2665-3
pin diagram of ic 4040
resistor fix value
STK4101V
|
PDF
|
AGRB10E
Abstract: AGRB10E equivalent JESD22-C101A 1661 mhz
Text: Preliminary Data Sheet February 2004 AGRB10E 10 W, 1.0 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRB10E (1.0 GHz to 2.7 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS)
|
Original
|
AGRB10E
AGRB10E
DS04-097RFPP
DS03-164RFPP)
AGRB10E equivalent
JESD22-C101A
1661 mhz
|
PDF
|
AGRB10E
Abstract: JESD22-C101A Inmarsat
Text: Preliminary Data Sheet January 2004 AGRB10E 10 W, 1.0 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRB10E (1.0 GHz to 2.7 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS)
|
Original
|
AGRB10E
AGRB10E
envir32/F,
DS03-164RFPP
DS03-038RFPP)
JESD22-C101A
Inmarsat
|
PDF
|
AGRC10GM
Abstract: JESD22-C101A mosfet 6 ghz z823 1661 mhz
Text: Preliminary Data Sheet November 2004 AGRC10GM 10 W, 2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRC10GM (1.0 GHz to 2.1 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor
|
Original
|
AGRC10GM
AGRC10GM
DS04-260RFPP
JESD22-C101A
mosfet 6 ghz
z823
1661 mhz
|
PDF
|
OPCA-02
Abstract: ABB ACS350 ACS350 FMBA-01 9pin D-connector modbus ACS350 drives ACS350-03X-01A9-4 ACS350-01X-09A8-2 J400 acs-cp-a
Text: ABB general machinery drives ACS350, 0.37 to 7.5 kW / 0.5 to 10 hp Technical catalogue PROFILE INDUSTRIES PRODUCTS APPLICATIONS EXPERTISE PARTNERS SERVICES ACS350_EN_revC.indd 1 30.6.2006 9:40:15 Two ways to select your drive Choice 1: Simply contact your local ABB drives
|
Original
|
ACS350,
ACS350
ACS350
3AFE68596106
HANSAPRINT/SAL06
OPCA-02
ABB ACS350
FMBA-01
9pin D-connector modbus
ACS350 drives
ACS350-03X-01A9-4
ACS350-01X-09A8-2
J400
acs-cp-a
|
PDF
|
OPCA-02
Abstract: 9pin rs232 D-connector wiring diagram 03X-44A0-4 acs-cp-a ACS350-03X-44A0-4 ABB ACS350 ABB ACS 800 ACS350 NOCH-0030-6X OPMP-01
Text: Catalog ABB general machinery drives ACS350, 0.37 to 22 kW / 0.5 to 30 hp 14412 ACS350_EN_revG_68596106.indd 1 2.4.2009 15:03:20 Two ways to select your drive Choice 1: Simply contact your local ABB drives sales office see page 19 and let them know what
|
Original
|
ACS350,
ACS350
ACS350
Contro925
3AFE68596106
OPCA-02
9pin rs232 D-connector wiring diagram
03X-44A0-4
acs-cp-a
ACS350-03X-44A0-4
ABB ACS350
ABB ACS 800
NOCH-0030-6X
OPMP-01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Power MOSFET B-pack E-pack STO-220 N-Channel, Enhancement type Absolute Maximum Ratings Tch V dss V gss Id Pt max [ ”C ] [V ] [V ] [A] [w ] [O ] [pF] [pF] [ns] [ns] 2SK1861 150 +20 4 10
|
OCR Scan
|
2SK1861
F05B23VR
2SK1195
STO-220
STO-220
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Absolute Maximum Ratings Type No. Electrica Characteristics VcBO VCEO V ebo Ic Ib Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] fC ] [ t ] -5 -7 -1 .5 2SA1795 1796 - 4 0 1876 -8 0 1877 2SC4668 40
|
OCR Scan
|
2SA1795
2SC4668
STO-220
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Surface-Mount Devices Power Transistors w E-pack Bipolar transistors A bsolute M axim um Ratings Type No. 2SA 1795 1796 1876 1877 VcBO VcEO V ebo Ic [V] [V] [V] [A] -6 0 -4 0 -5 -7 -8 0 -8 0 60 40 2SC 4668 -1 -5 -1 .5 100 80 4979 Tj sus (min) [W] [°C] P C ]
|
OCR Scan
|
OT-89
2SK1861
2SK1195
|
PDF
|
2SC460
Abstract: No abstract text available
Text: P o w e r T r a n s is to r s E-pack Bipolar transistors Type No. E IA J Absolute Maximum Ratings Electrical C haracteristics V cbo VCEO V ebo Ic Ib Pt T stg [V] [V] [V] [A ] [A ] [W] [•c] [•c] Vceo s u s (min) [V] -5 — 7 -1.5 -55 -40 -3 -1 -5 7 -1.5
|
OCR Scan
|
2SA1795
2SC460S
Enhance861
F05B23VR
2SK2489
STO-220
2SC460
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors PNP Silicon MPSÄ75 MPSA77 COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Symbol Rating Collector-Emitter Voltage VCES Em itter-Base Voltage MPSA7S MPSA77 Unit -40 -60 Vdc Vebo -10 Vdc Collector Current — Continuous
|
OCR Scan
|
MPSA77
00-1K-2K
-5K-10K
MPSA75
|
PDF
|
2SC466
Abstract: No abstract text available
Text: P o w e r T r a n s is to r s E-pack Bipolar transistors Type No. E fA J Absolute Maximum Ratings Electrical Characteristics VCEO V e bo Ic Ib Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [•c] C-c] [V ] No. 2SA179S 1790 1876 1877 2SC466& 1 4666 4878 4876 —5
|
OCR Scan
|
2SA179S
2SC466&
2SK1861
2SK248Q
STO-220
2SC466
|
PDF
|
mpsa77
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors P N P Silicon COLLECTOR 3 EMITTER 1 M A X IM U M R A T IN G S Rating Symbol MPSA75 MPSA77 Unit Collector-Emitter Voltage VCES -4 0 -60 Vdc Emitter-Base Voltage v EBO -10 Vdc 'C -500 Ade Pd 625 5.0
|
OCR Scan
|
MPSA75
MPSA77
5MPSA77
|
PDF
|
|
|
TIC 136 Transistor
Abstract: mrf475 tic 136 mrf475 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF475 The RF Line 12 W PEP — 12 W (CW) — 30 MHz NPN SILICON RF POWER TRANSISTOR R F POWER TRANSISTO R . . . designed prim arily for use in single sideband linear amplifier output applications in citizens band and other communications
|
OCR Scan
|
MRF475
TIC 136 Transistor
mrf475
tic 136
mrf475 transistor
|
PDF
|
transistor Bc 542
Abstract: transistor BC 56 transistor bc 144 bc 147 transistor BUT 11 Transistor transistor BC 147 transistor bc 146 c 2665 transistor BUT56 FC4A
Text: 17E 1> • ô'iëO O 'lL 000*155? TELEFUNKEN ELE CTRONIC BUT 56 • BUT 56 A TTilUlFiyjlìSKiìii electronic Cr*ttve Tèehoo*og*s T*-33-f3 Silicon NPN Power Transistors Applications: Switching mode power supply Features: • In multi diffusion technique • Short switching times
|
OCR Scan
|
33-r2
a75ttti
DIN41
T0126
15A3DIN
transistor Bc 542
transistor BC 56
transistor bc 144
bc 147 transistor
BUT 11 Transistor
transistor BC 147
transistor bc 146
c 2665 transistor
BUT56
FC4A
|
PDF
|
RF640
Abstract: RF NPN POWER TRANSISTOR 2 GHZ
Text: MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA The RF Line NPN Silicon RF Power TVansistor The M R F6404 is designed for 1.8 G Hz Personal Communications Network PCN base station applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and
|
OCR Scan
|
MRF6404
F6404
RF640
RF NPN POWER TRANSISTOR 2 GHZ
|
PDF
|
transistor f420
Abstract: transistor BJ 115 F420 transistor t514 TRANSISTOR ZT 5551 2SK67A transistor bt 667 TCA561 2S30 T010
Text: NEC j m^Tiytn A Junction Field Effect Transistor 2SK67A E C M 4 > tf- ? > X N-Channel Silicon Ju n ctio n Field Effect Transistor ECM Im pedance C onverter W-mm/ P A C K A G E D IM E N S IO N S o M 'm m t T t o Unit : mm t ItMMTto OECM-i > o Y - h 2 .9 ± 0.2
|
OCR Scan
|
2SK67A
t11-or-h
t1780
transistor f420
transistor BJ 115
F420 transistor
t514 TRANSISTOR
ZT 5551
2SK67A
transistor bt 667
TCA561
2S30
T010
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen cies to 520 MHz. The high gain and broadband performance of this device
|
OCR Scan
|
AN215A,
MRF5035.
AN721,
MRF5035
|
PDF
|
2N2659
Abstract: 2N2660 2N2662 2N2665 2N2664 2N2668 Germanium Transistor Texas Germanium 2N2667 c 2665 transistor
Text: TYPES 2N2659, 2N2660, 2N2661, 2N2662, 2N2663, 2N2664 2N2665, 2N2666, 2N2667, 2N2668, 2N2669, 2N2670 _P-N-P AUOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS m < * 2 c- 5 ¡1 5 50-, 70», or 9 0 -VOLT UNITS Guaranteed l« x at 85°C ° * 2 15 WATTS at 2 5 'C CASE TEMPERATURE
|
OCR Scan
|
2N2659,
2N2660,
2N2661,
2N2662,
2N2663,
2N2664
2N2665,
2N2666,
2N2667,
2N2668,
2N2659
2N2660
2N2662
2N2665
2N2668
Germanium Transistor
Texas Germanium
2N2667
c 2665 transistor
|
PDF
|
stk4142
Abstract: No abstract text available
Text: Ordering number: EN266ÔB Thick Film Hybrid 1C STK4142 II AF Power Amplifier Split Power Supply (25W + 25W min, THD = 0.4%) Package Dimensions Features • The STK4102II series (STK4142II) and STK4101V series (high-grade type) are pin-compatible in the out
|
OCR Scan
|
EN266Ã
STK4142
STK4102II
STK4142II)
STK4101V
STK4101II
STK41421I]
DD207S7
STK4142II
|
PDF
|
complementary MOSFET 2sk
Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Text: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V
|
OCR Scan
|
DC12V
DC24V
DC48V
AC100V
AC200V
0-60V)
2SJ487
2SK2816
2SJ488
2SJ489
complementary MOSFET 2sk
transistor+2sk
2SK series
2SK 20a 600v
2sk 1181
2SK 150A
2SK+series
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR S7E » • 43022^1 GQ2G427 T H H A S File Number 1_PowerTransistors . GE10000-GE10009 15.77 S ilico n N-P-N Darlington Pow er T ra n sisto rs TERM INAL DESIGNATIONS 'c F U N Q E
|
OCR Scan
|
GQ2G427
GE10000-GE10009
GE10000
GE10009
T0-204AA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR blE D • MARRIS SEMI CONDUCTOR 43D2271 ÜQMbûEfl ÛÔO « H A S Hf f F A 1f f 1■ 3 0 f # ■ ff Output Clamping, Ultra High-Speed Current Feedback Amplifier Features Description • User Programmable Output Voltage Clamp The HFA1130 is a high speed wideband current feedback amplifier
|
OCR Scan
|
43D2271
HFA1130
30MHz)
-56dBc
650MHz
HFA1130
|
PDF
|
