C 1685 TRANSISTOR Search Results

C 1685 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

C 1685 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
UU15 Abstract: tic 260 PH1617-60 "Power TRANSISTOR" Text: PH1617-60 M/A-OOM Wireless Power Transistor 60 Watts, 1615- 1685 MHz = & Microwave Products Outline Drawing1 Description M/A-COM’s PH1617-60 is a silicon bipolar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1615 to 1685 MHz range. This	OCR Scan	PH1617-60 PH1617-60 TT50M5QA 11Bt- 1685MHz 1615MHz 1685MHz UU15 tic 260 "Power TRANSISTOR"	PDF
c 1685 transistor Abstract: 1685 transistor transistor c 1685 1615mhz PH1617-60 Text: Wireless Power Transistor, 60 Watts, 1615 - 1685 MHz PH1617-60 PH1617-60 Wireless Power Transistor 60 Watts, 1615 - 1685 MHz 1 Features • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Emitter Configuration Diffused Emitter Ballasting Resistors	Original	PH1617-60 PH1617-60 1615MHz 1685MHz c 1685 transistor 1685 transistor transistor c 1685 1615mhz	PDF
SY10EP51V Abstract: SY10EP51VKI SY10EP51VKITR SY10EP51VZI SY10EP51VZITR Text: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK FEATURES • ■ ■ ■ ■ ■ SY10EP51V FINAL DESCRIPTION 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143	Original	SY10EP51V 320ps SY10EP51V EP51V HEP51V SY10EP51VKI SY10EP51VKITR SY10EP51VZI SY10EP51VZITR	PDF
Untitled Abstract: No abstract text available Text: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK SY10EP51V FINAL FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143	Original	320ps SY10EP51V EP51V HEP51V HEP51V SY10EP51V	PDF
Untitled Abstract: No abstract text available Text: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK FEATURES • ■ ■ ■ ■ ■ SY10EP51V DESCRIPTION 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143	Original	320ps SY10EP51V SY10EP51V EP51V HEP51V HEP51V	PDF
Untitled Abstract: No abstract text available Text: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK ECL Pro SY10EP51V FINAL FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143	Original	320ps SY10EP51V EP51V HEP51V HEP51V SY10EP51V	PDF
transistor to1a Abstract: to1a to1a transistor WS7805 15A Voltage Regulators to18v WS7805CV WS7805DP Text: POSITIVE-VOLTAGE REGULATORS WS7805 ! 3-Termainal Regulators TO-252 ! Output Current Up to 1.5 A WS7805DP ! No External Components ! Internal Thermal Overload Protection ! High Power Dissipation Capability ! Internal Shot-Circuit Current Limiting ! Output Transistor Safe-Area	Original	WS7805 O-252 WS7805DP O-252) O-220 WS7805CV transistor to1a to1a to1a transistor WS7805 15A Voltage Regulators to18v WS7805CV WS7805DP	PDF
KPT24 Abstract: MC100EPT24 MC100EPT24D MC100EPT24DR2 Text: MC100EPT24 LVTTL/LVCMOS to Differential LVECL Translator The MC100EPT24 is a LVTTL/LVCMOS to differential LVECL translator. Because LVECL levels and LVTTL/LVCMOS levels are used, a –3.3V, +3.3V and ground are required. The small outline 8–lead SOIC package and the single gate of the EPT24 makes it ideal	Original	MC100EPT24 MC100EPT24 EPT24 350ps r14525 MC100EPT24/D KPT24 MC100EPT24D MC100EPT24DR2	PDF
2SD444 Abstract: No abstract text available Text: I O rd e rin g n u m b e r EN 3200 iSA%YO 2SA1685/2SC4443 No.3200 PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications Features • Fast switching speed • High gain-bandwidth product • Low saturation voltage : 2SA1685 A bsolute M axim um R atings at Ta = 25°C	OCR Scan	2SA1685/2SC4443 2SA1685 1685/2SC4443 2SD444	PDF
2SD444 Abstract: 08TI 2SA1685 2SC4443 C4443 M685 Text: O rd e rin g n u m b e r: EN 3200 2SA1685/2SC4443 No.3200 SMIYO PNP/NPN Epitaxial Planar Silicon Transistors i High-Speed Switching Applications F e a tu re s • Fast switching speed • High gain-bandwidth product •Low saturation voltage : 2SA1685	OCR Scan	2SA1685/2SC4443 2SA1685 2SD444 08TI 2SA1685 2SC4443 C4443 M685	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration	OCR Scan	900MHz Q62702-F1491 OT-323 fl235bGS D1220Ã	PDF
2SC5187 Abstract: 2SA1936 TRANSISTORS SANYO SC3392 2sc2960 a-y Text: SAfÜYO H IG H -SPEED SW ITCHING A P P L I C A T I O N S Small Signal Transistors] Features ♦ ♦ ♦ ♦ SANYO:SMCP Case Outlines (unit^mm -0J High switching speed High breakdown voltage Low collector saturation voltage Very small-sized package permitting a set to be made smaller	OCR Scan	250mm 2SA1883 2SC4987 2SA1763 SC4452 2SC4443 2SA1764 2SC4453 2SC4168 2SA1728 2SC5187 2SA1936 TRANSISTORS SANYO SC3392 2sc2960 a-y	PDF
XNOR GATE Abstract: data sheet for 3 input xor gate HP08 SY10EP08V SY10EP08VKI SY10EP08VKITR SY10EP08VZI SY10EP08VZITR Text: 5V/3.3V DIFFERENTIAL 2-INPUT XOR/XNOR FEATURES SY10EP08V FINAL DESCRIPTION • ■ ■ ■ 3.3V or 5V power supply options Maximum frequency > 3GHz typical 200ps typical propagation delay Internal input resistors: pulldown on D, pulldown and pullup on /D ■ Q output will default LOW with inputs open or at VEE	Original	SY10EP08V 200ps SY10EP08V EP08V SY10EP08VKITR* XNOR GATE data sheet for 3 input xor gate HP08 SY10EP08VKI SY10EP08VKITR SY10EP08VZI SY10EP08VZITR	PDF
Untitled Abstract: No abstract text available Text: 5V/3.3V DIFFERENTIAL 2-INPUT XOR/XNOR FEATURES SY10EP08V DESCRIPTION • ■ ■ ■ 3.3V or 5V power supply options Maximum frequency > 3GHz typical 200ps typical propagation delay Internal input resistors: pulldown on D, pulldown and pullup on /D ■ Q output will default LOW with inputs open or at VEE	Original	SY10EP08V 200ps SY10EP08V EP08V HEP08V	PDF

SY10EP05V Abstract: SY10EP05VKI SY10EP05VKITR SY10EP05VZI SY10EP05VZITR HP05 Text: 5V/3.3V DIFFERENTIAL AND/NAND FEATURES SY10EP05V FINAL DESCRIPTION • ■ ■ ■ 3.3V or 5V power supply options 180ps typical propagation delay Maximum frequency >3GHz typical Internal input resistors: pulldown on D, pulldown and pullup on /D ■ Q output will default LOW with inputs open or at VEE	Original	SY10EP05V 180ps SY10EP05V EP05V SY10EP05VKITR* SY10EP05VKI SY10EP05VKITR SY10EP05VZI SY10EP05VZITR HP05	PDF
k8 marking transistor Abstract: HP05 Text: 5V/3.3V DIFFERENTIAL AND/NAND SY10EP05V FINAL FEATURES • ■ ■ ■ 3.3V or 5V power supply options 180ps typical propagation delay Maximum frequency >3GHz typical Internal input resistors: pulldown on D, pulldown and pullup on /D ■ Q output will default LOW with inputs open or at VEE	Original	180ps SY10EP05V EP05V HEP05V SY10EP05V k8 marking transistor HP05	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MC10EP33/D SEM ICONDUCTO R TECHNICAL DATA Product Preview ~ M C 10EP33 4 D ivider The MC10EP33 is an integrated + 4 divider. The differential clock inputs and the V b b allow a differential, single-ended or AC coupled interface to the device. If used, the V b b output should be bypassed to	OCR Scan	MC10EP33/D 10EP33 MC10EP33 440ps	PDF
Untitled Abstract: No abstract text available Text: 5V/3.3V DIFFERENTIAL 2-INPUT XOR/XNOR SY10EP08V FINAL FEATURES • ■ ■ ■ 3.3V or 5V power supply options Maximum frequency > 3GHz typical 200ps typical propagation delay Internal input resistors: pulldown on D, pulldown and pullup on /D ■ Q output will default LOW with inputs open or at VEE	Original	SY10EP08V 200ps EP08V HEP08V SY10EP08V	PDF
Untitled Abstract: No abstract text available Text: 5V/3.3V DIFFERENTIAL AND/NAND FEATURES SY10EP05V DESCRIPTION • ■ ■ ■ 3.3V or 5V power supply options 180ps typical propagation delay Maximum frequency >3GHz typical Internal input resistors: pulldown on D, pulldown and pullup on /D ■ Q output will default LOW with inputs open or at VEE	Original	180ps SY10EP05V SY10EP05V EP05V HEP05V	PDF
D773 Abstract: b 58115 T73C SGSD00042 sgsp472 CECLA npn 1000V 100a SGSD00044 npn transistors 700V 1A Text: S G S-THOMSON D7E D \| 7cI2i:i237 QD1Ô74T 1 \| 73C VÎK S G S d K ì r i 1 8 7 78 D MULTIEPITAXIAL MESA HOLLOW EMITTER NPN „ 1 ADVANCE DATA HIGH V O L T A G E F A S T SW ITCHING POW ER T R A N S I S T O R S The S G SD 0 00 4 2 and S G SD 0 0 04 4 are m ultiepjtaxial mesa h ollow em itter N PN transistors	OCR Scan	SGSD00Q44 SGSD00042 SQSD00044 O-220 SGSD00044 90Wtimes 001fl75M 73Cjj733 SGSD00042 D773 b 58115 T73C sgsp472 CECLA npn 1000V 100a SGSD00044 npn transistors 700V 1A	PDF
HEP05V Abstract: No abstract text available Text: 5V/3.3V DIFFERENTIAL AND/NAND ECL Pro SY10EP05V FINAL FEATURES • ■ ■ ■ 3.3V or 5V power supply options 180ps typical propagation delay Maximum frequency >3GHz typical Internal input resistors: pulldown on D, pulldown and pullup on /D ■ Q output will default LOW with inputs open or at VEE	Original	180ps SY10EP05V EP05V HEP05V SY10EP05V	PDF
Untitled Abstract: No abstract text available Text: ECL Pro SY10EP08V FINAL 5V/3.3V DIFFERENTIAL 2-INPUT XOR/XNOR FEATURES • ■ ■ ■ 3.3V or 5V power supply options Maximum frequency > 3GHz typical 200ps typical propagation delay Internal input resistors: pulldown on D, pulldown and pullup on /D ■ Q output will default LOW with inputs open or at VEE	Original	SY10EP08V 200ps EP08V HEP08V SY10EP08V	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES • • • • • • PHP130N03LT, PHB130N03LT SYMBOL ’Trench’ technology Very low on-state resistance Fast switching Stable off-state characteristics High thermal cycling performance	OCR Scan	PHP130N03LT, PHB130N03LT PHP130N03LT T0220AB) PHP130NQ3LT,	PDF
transistor k81 Abstract: No abstract text available Text: ECL Pro ECLSY10EP08V Pro™ SY10EP08V FINAL 5V/3.3V DIFFERENTIAL 2-INPUT XOR/XNOR Micrel FEATURES • ■ ■ ■ 3.3V or 5V power supply options Maximum frequency > 3GHz typical 200ps typical propagation delay Internal input resistors: pulldown on D, pulldown	Original	SY10EP08V 200ps SY10EP08V EP08V transistor k81	PDF

C 1685 TRANSISTOR Search Results

C 1685 TRANSISTOR Result Highlights (5)

C 1685 TRANSISTOR Datasheets Context Search

UU15

c 1685 transistor

SY10EP51V

Untitled

Untitled

Untitled

transistor to1a

KPT24

2SD444

2SD444

Untitled

2SC5187

XNOR GATE

Untitled

SY10EP05V

k8 marking transistor

Untitled

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Untitled

D773

HEP05V

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transistor k81