QRB1113
Abstract: LTA 703 S
Text: REFLECTIVE OBJECT SENSORS OP T O E L E C T H 0 N l t S QRB1113/1114 PACKAGE DIMENSIONS DESCRIPTION The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing.
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QRB1113/1114
QRB1113/1114
QRB1113
LTA 703 S
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Untitled
Abstract: No abstract text available
Text: Ea REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRD1113/1114 PACKAGE DIMENSIONS PIN 1 INDICATOR -.083 2.11 O P T IC A L ' C E N T E R LIN E ” -I , » - .240 p i n (6.10) .120 (3.05)- .173 (4.39) DESCRIPTION The QRD1113/1114 reflective se n so rs consist of an
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QRD1113/1114
QRD1113/1114
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KSR1114
Abstract: KSR2114 9vv marking
Text: KSR2114 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (Ri =4.7K£1, R2=47K£1) • C om plem ent to K S R 1114 ABSOLUTE MAXIMUM RATINGS (TA=25°C)
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KSR2114
KSR1114
OT-23
-10nA,
-100nA,
-10mA,
-100nA
KSR1114
KSR2114
9vv marking
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SB1114 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION 2S B 1114 is designed fo r aud io freq uency pow er a m p lifie r and s w itch ing a p p lic a tio n , especially in H y b rid Integrated C ircuits, FEATURES
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2SB1114
2SD1614
2SB11
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Untitled
Abstract: No abstract text available
Text: U U HFA1114 H A R R IS S E M I C O N D U C T O R 850MHz Video Cable Driving Buffer Novem ber 1996 Features Description • Access to Summing Node Allows Circuit Customization T h e H FA 1114 is a closed loop Buffer featuring user program m able gain and ultra high speed performance.
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HFA1114
850MHz
483nm
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ECG1114
Abstract: No abstract text available
Text: P H IL IP S E C G INC 17E bbSaiSfl DGD4QS3 3 r. T-74-05-01 - WV V . T E E ü r e E C G KÜ 3 AUDIO AMPLIFIER s e m ic o n d u c t o r s • • • • 1114 OUTPUT POWER 4.5W 14V-4 0 LOW DISTORTION LOW QUIESCENT CURRENT HIGH INPUT IMPEDANCE M E C H A N IC A L DATA
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ECG1114
T-74-05-Ã
ECG1114
14-leadquad
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UNR1111
Abstract: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112
Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits
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111D/111E/111F/111H/111L
111D/111E/111F/111H/111L)
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1119
B 47k 1112
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1117 S Transistor
Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 6.9±0.1 Costs can be reduced through downsizing of the equipment and
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111D/111E/111F/111H/111L
111D/111E/111F/111H/111L)
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
1117 S Transistor
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1119
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UN1114
Abstract: 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118
Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 ● ● ● ● ● ● ● ● ● ● ●
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111D/111E/111F/111H/111L
UN1111
UN1112
UN1113
UN1114
UN1115
UN1116
UN1117
UN1118
UN1119
UN1114
1117 S Transistor
UN1110
UN1111
UN1112
UN1113
UN1115
UN1116
UN1117
UN1118
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1117 S Transistor
Abstract: 1117 S 1117 AT 1116 1117 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115
Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits
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111D/111E/111F/111H/111L
111D/111E/111F/111H/111L)
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
1117 S Transistor
1117 S
1117 AT
1116
1117
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR DICE PROCESS CHARTS TRANSISTOR DICE PROCESS CHART SW IT C H IN G T R A N S IST O R S: Sample evaluation of all batches on switching parameters HIGH FREQ U EN CY T R A N S IST O R S: Sample evaluation of all batches on fT and capacitance 11-13
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sensor QRD1114
Abstract: QRD1114 reflective 1114 transistor C 1114 transistor
Text: REFLECTIVE OBJECT SENSOR IPT0ELEC1IIIIC5 QRD1113/1114 ii"' , ^ ' ' ü. .iUJ-'l-¿W.P. . PACKAGE DIMENSIONS T h e QRD1113/1114 reflective sensors consist of an PIN 1 INDICATOR infrared emitting diode and an NPN silicon — .083 2.11 II phototransistor m ounted side by side in a black plastic
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QRD1113/1114
QRD1113/1114
100//A,
sensor QRD1114
QRD1114
reflective
1114 transistor
C 1114 transistor
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C 1114 transistor
Abstract: No abstract text available
Text: FiS REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1113/1114 PACKAGE DIMENSIONS .4 2 0 1 0 .6 7 -J -4 - DESCRIPTIO N Th e QRB1113/1114 consists of an infrared emitting diode -.3 2 8 (8 .3 3 ) a and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.
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QRB1113/1114
QRB1113/1114
000b33b
C 1114 transistor
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Untitled
Abstract: No abstract text available
Text: I REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRD1113/1114 P PACKAGE DIMENSIONS DESCRIPT The QRD1113/1114 reflective sensors consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the
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QRD1113/1114
QRD1113/1114
QRD1113/1114.
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Untitled
Abstract: No abstract text available
Text: Il Silicon Low Noise Bipolar Transistors P • 5bM551M 0 D 0 m 55 7 H MIC n/A-con seuiconDtBRLNûton MA42120 Series Description 7% 3 / v ^ Nominal fT - 1.5 GHz Nominal Current Range - .4 to 3 mA Iq Max. - 80 mA Frequency - 100 to 600 MHz Geometry - 70 This series of NPN epitaxial silicon planar transistors is
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5bM551M
MA42120
MA42122
MA42123
MA42121
MIL-STD-750
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T-43-25
Abstract: No abstract text available
Text: GEC PLESSEY SEMICONDS 43E D MM 37bôS22 D O I B ^ Û 3 BIPL SB " T '4 3 >-Z<5 GEC PLESSEY S E M I C O N D U C T O R S SL2363 & SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2363C and SL2364C are arrays of transistors internally connected to torm a dual long-tailed pair with tail
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SL2363
SL2364
SL2363C
SL2364C
37bflS2S
T-43-25
200mW
SL2364
T-43-25
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UM3512-01C
Abstract: UM3512-01R UM3512 transistor organ f4 sl 512-note 32653 16 ohm 0.25w SPEAKER piano keyboard
Text: UM3512 Series Melody Organ 1C Features • ■ ■ ■ ■ ■ ■ ■ generate system clock ■ One key, one song with auto-stop Junction, or stop by pressing “ RESET ■ key ■ Play all the songs continuously with auto-stop function 1st,2nd . ,15th,stop , or stop by pressing
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UM3512
47-note
512-note
UM3512-01C
UM3512-01R
UM3512H
20LDIP
transistor organ
f4 sl
32653
16 ohm 0.25w SPEAKER
piano keyboard
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C2023 transistor
Abstract: c2023 transistor c 2316 transistor c2023 K C2023
Text: mm jm m R F P r o d u c ts M ic m m s e m i 140 Commerce Drive Montgomeryvilie, PA 18936-1013 Tel: 215 631-9840 T C C 20 23-16 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS • FREQUENCY £.0 2.3GHz «PO W ER OUT 16.0W » POWER GAIN
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SD1S87
TCC2023-16
10OpF
C2023-16
390ftM
C2023 transistor
c2023
transistor c 2316
transistor c2023
K C2023
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N3C SOT
Abstract: No abstract text available
Text: SIEMENS NPN Silicon High-Voltage Transistors BFN 36 BFN 38 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 37, BFN 39 PNP Type
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Q62702-F1246
Q62702-F1303
OT-223
BFN36
N3C SOT
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SD1887
Abstract: transistor 2Fn M147 TCC2023-16
Text: H M «-» J IV II C r O S e m i Progress Powered by Technology 140 Commerce Drive M ontgom eryville, PA 1 8936-1013. Tel: 215 631-9840 T C C 20 2 3 -1 6 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 2.0-2.3GHz POWER OUT 16.0W
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TCC2023-1
SD1887
TCC2023
S88TCC2023-16-0'
TCC2023-16
transistor 2Fn
M147
TCC2023-16
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tn0201t
Abstract: 38212 3-8212
Text: Tem ic TN0201T N-Channel Enhancement-Mode MOS Transistor Product Summary rDS<on M ax Q) V(br )dss M in (V) 1.0@ V GS = 10 V 20 1.4 @ VGS = 4.5 V VgS(Ui) (V) I d (A) 1.0 to 3.0 0.3 Features Benefits Applications
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TN0201T
TN020esistance
P-38212--Rev.
TN0201T_
tn0201t
38212
3-8212
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transistor bI 240
Abstract: QRB1113 qrb1114 D transistor sEC transistor 373
Text: E9 REFLECTIVE OBJECT SENSORS Mw— OPTOELECTRONICS QRB1113/1114 DESCRIPTION PACKAGE DIMENSIONS The Q RB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.
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QRB1113/1114
QRB1113/1114
ST2179nt
QRB1113
QRB1114
transistor bI 240
D transistor sEC
transistor 373
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common collector PNP
Abstract: UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118
Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits (1.0) 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ
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UNR111x
UN111x
UN1110)
UN1111)
UN1112)
UN1113)
UN1114)
UN1115)
UN1116)
UN1117)
common collector PNP
UNR1110
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP4N50E GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL N-channel enhancement mode field-effecf power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable
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PHP4N50E
PHX4N50E
PINNING-SOT186A
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