Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR m CCD area image sensor , m w m - :• S7960/S7961 -1008 Back-thinned FFT-CCDs for high-speed application S 7 9 6 0 /S 7 9 6 1 -10 0 8 a re F F T -C C D im a g e se n so rs s p e c ific a lly d e s ig n e d fo r high sp e e d o p e ra tio n . By e m p lo y in g a w id e band w id th o n -c h ip
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S7960/S7961
7960/S7961-1008
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Untitled
Abstract: No abstract text available
Text: V e r s io n 2 . 0 , 2 0 M a r 2 0 1 3 CoolSET -F3R80 I C E3 AR 1008 0JZ -T O f f -Lin e S MP S Cur ren t M od e Co n tr olle r wit h in t eg ra te d 8 00 V Co o lMO S ® a n d S ta rt up c ell b ro wn ou t & fr eq ue n c y jit t er in DI P -7 P o w e r M a n a ge m e n t & S u p p ly
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-F3R80
-F3R80
ICE3AR10080JZ-T
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C 1008 y transistor
Abstract: 1008 transistor transistor 1008 sC1008
Text: K SC 1008 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92 • Complement to KSA708 • High Collector-Base Voltage V cbo=80V • Collector Current lc=700mA • Collector Dissipation Pc“800mW ABSOLUTE MAXIMUM RATINGS TA=25*C
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KSA708
700mA
800mW
500mA,
C 1008 y transistor
1008 transistor
transistor 1008
sC1008
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Untitled
Abstract: No abstract text available
Text: h 7 > y ^ ^ / T ransistors f t E T IU I A FM A6 PNP V ' j 3 > h 7 > y 7 ^ -f >/S[ —£ y /V lnverter Driver Epitaxial Planar Dual Mini-Mold PNP Silicon Transistor • 1 7 , - M - 5 - T T tiiH /D im e n s io n s Unit : mm) - J l ’ K /'f -J tT ~ v T
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C 1008 y transistor
Abstract: No abstract text available
Text: ROHM CO MGE LTD B !> 7 Ö S Ö cn cl Q Q D h B Q b ô SRHM FMA6 / T r a n s is t o r s , , - - •■■■■ 7 - y j- 9 0 - ¿ 'M t *a r ; u $ - î k pnp v >; =i > h - 7 > ^ ^ O / S —£ K 7 < /V ln v e r te r Driver Epitaxial Planar Dual Mini-Mold PNP Silicon Transistor
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--50p
G00b3Q7
C 1008 y transistor
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2SB1008
Abstract: No abstract text available
Text: Is ~ 7 > V $ /T ra n sisto rs 2SB 1008 2SB1008 PNP h> i5;Ji>jSW^]iill iffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistor • • 1 # - ' ) > W f ^ j i l S l / D i m e n s i o n s U n it : m m ) h > t ^ T - h FET'Æ >5o 2)BEfôlCjfô4kQCD$ÊÎ)t£F*3j&o >Sjf$
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2SB1008
O-126
600mA/-1
100mA
2SB1008
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
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S7030/S7031
SE-171
KMPD1023E10
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
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S7030/S7031
SE-171
KMPD1023E12
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la 4127
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
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S7030/S7031
SE-171
KMPD1023E11
la 4127
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
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S7030/S7031
SE-171
KMPD1023E12
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
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S7030/S7031
SE-171
KMPD1023E12
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C 1008 y transistor
Abstract: 2sb1008
Text: 2SB1008 h ~7 > y 7 . $ /Transistors 2SB 1008 Epitaxial Planar PNP Silicon Transistor Darlington & JS '$S ^*tM iffl/Low Freq. Power Amp. • • 1) $ * } R - + ;£ l2 / D i m e n s i o n s ( U n i t : m m ) h > « « E T '* h F E ? * 5 o 7 .810.2 2 )B E (S llC |it)4kQ (73ffifiiirtlio S / f $
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2SB1008
73ffifiiirtlio
111Emitter
C 1008 y transistor
2sb1008
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airtronic capacitor
Abstract: trimmer 3-30 pf 3 pin TRIMMER capacitor SD1021 TRIMMER 65PF 101oi 230MHZ mica trimmer capacitor D1021 SOT KAR AR
Text: M MER -LProducts IV IIC rO w _ _ • S G w w » fn I ■ mm 140 Commerce Drive M ontgom eryville, PA 18936-1013 Teh e n , n o . 5 631 984Q S D 1 0 2 I P ro g re s a P o w e re d b y T ech no log y RF & MICROWAVE TRANSISTORS 130.,230MHz FM MOBILE APPLICATIONS
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SD1021
230MHz
SD1021
1OO11F,
airtronic capacitor
trimmer 3-30 pf
3 pin TRIMMER capacitor
TRIMMER 65PF
101oi
mica trimmer capacitor
D1021
SOT KAR AR
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2SD987
Abstract: 2sd987a 25880 2sb807
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2sb807
2sb808
2SD987
2sd987a
25880
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
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S7030/S7031
SE-171
KMPD1023E14
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CO 824
Abstract: No abstract text available
Text: Infineon t«ch riduci i«t CMY 210-173 MHz to 824 - 849 MHz Up-Converter Application Note No. 035 The CMY 210 is a ultralinear mixer with integrated LO-buffer for frequencies up to and exceeding 2.5 GHz. A low LO-input power of typically 0 dBm is sufficient to provide a
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EHT09041
EHT08983
EHT09051
CO 824
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
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S7030/S7031
SE-171
KMPD1023E13
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2SB1008
Abstract: 333T 7333-1
Text: ROHM CO LTD 40E m d v a a a 'm d q o s s is / T ra n s is to rs i ebrhm 2SB1008 - 7 - 3 3 -3 1 PNP h> 2 Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistor • W f M Ü H / ' D i n i e n s i o n s U n it : m m
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BEFitrji64kncD}
2SB1008
O-126
T-33-37
-50-COLLECTOR
Ta-25
2SB1008
333T
7333-1
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SS502
Abstract: M502 Q60218-Y34 Q60218-Y58 BSY34 Scans-0010549
Text: NPIM-HF-Transistoren für Schalteranw endungen B S Y 34 B SY 58 B S Y 34 und B S Y 58 sind doppeltdiffundierte epitaktische NPN-Silizium-HF-Transistoren in Planartechnik im Gehäuse 5 C3 DIN 41 873 T O -39 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden.
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Q60218-Y34
Q60218-Y58
100mA
100mA
/c-150mA,
SS502
M502
Q60218-Y34
Q60218-Y58
BSY34
Scans-0010549
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
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Original
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S7030/S7031
SE-171
KMPD1023E13
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PDF
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
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Original
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S7030/S7031
SE-171
KMPD1023E14
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SD2423 Silicon NPN Epitaxial, Darlington HITACHI Application Low frequency power amplifier Features The transistor with a built-in zener diode o f surge absorb. Outline UPAK 2 ,4 1. 2. 3. 4. 1006 Base Collector Emitter Collector Flange (Typ) (Typi ¿ 3
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2SD2423
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2N3053
Abstract: No abstract text available
Text: T -3 3 -0 5 P ow er Transistors 2N3053, 2N3053A HARRI S S E M I C O N D SE CT OR File Number 27E D M3D2S71 0 0 1 ^ 5 960 5 «H AS General-Purpose, Medium-Power Silicon N-P-N Planar Transistors TERMINAL DESIGNATIONS For Small-Signal A pplications Features:
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2N3053,
2N3053A
M3D2S71
O-205AD
2N3053
2N3053A
TQ-205AD
2N3053J29R4
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PDF
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OB5013
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR KSA708 LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO -92 • C om plem ent to KSC 1008 • Col lector-Base Voltage: VCbo= -80V • C ollector D issipation: Pc=8 0 0m W ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic
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KSA708
OB5013
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