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    C 029 TRANSISTOR Search Results

    C 029 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    C 029 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    schema UP 5135

    Abstract: voltmetre diode catalogue military passive component bridge rectifier Facon v10471 et 1102 EUROFARAD 5027A zx 1052
    Text: NOUVELLE EDITION NEW ISSUE Filtres “EMI - RFI” “EMI - RFI” Filters CATALOGUE 029 PRODUCT CATALOG 029 w w w. e u r o f a r a d . c o m certifications ISO 9002 : 001-96 / 005-96 Code OTAN : F 1379 NATO Code : F 1379 S.A.S. au capital de 20 246 400 €


    Original     		PDF

    ASI10720

    Abstract: VHB1-28T
    Text: VHB1-28T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE TO-39 The ASI VHB1-28T is Designed for B C 45° ØA FEATURES: • • • Omnigold Metalization System F MAXIMUM RATINGS G IC 0.4 A VCBO 55 V VCEO 30 V ØD E 5 W @ TC = 25 C PDISS O O .029 / 0.740


    Original     		PDF VHB1-28T VHB1-28T ASI10720

    ASI10711

    Abstract: VHB1-12T
    Text: VHB1-12T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB1-12T is Designed for PACKAGE STYLE TO-39 FEATURES: B C 45° ØA • • • Omnigold Metalization System ØD E F MAXIMUM RATINGS IC 400 mA MAX VCBO 40 V VCEO 20 V VCER 40 V PDISS O O .029 / 0.740


    Original     		PDF VHB1-12T VHB1-12T ASI10711 ASI10711

    2SC3157

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SC3157 Features • • NPN Silicon Power Transistors With TO-220F package Amplifier applications Maximum Ratings Symbol V CEO V CBO V EBO


    Original     		PDF 2SC3157 O-220F O-220F 50mAdc, 2SC3157

    br 101

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SC4517A Features • • NPN Silicon Power Transistors With TO-220F package Switching regulator and general purpose Maximum Ratings Symbol


    Original     		PDF 2SC4517A O-220F O-220F br 101

    buf405ax

    Abstract: BUF405AXI BUF405
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BUF405AXI Features • • • NPN Silicon Power Transistors High voltage, high speed switching NPN transistors. With TO-220F package Intended for use in horizontal deflection circuits of color television


    Original     		PDF BUF405AXI O-220F O-220F 500mAdc, buf405ax BUF405AXI BUF405

    D2394

    Abstract: transistor d1071 d1071 transistor transistor d774 transistor NEC D 882 p transistor D798 D774 transistor D1547 TRANSISTOR d1677 TRANSISTOR D405
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm hetero junction to create high mobility electrons.


    Original     		PDF NE24283B NE24283B D2394 transistor d1071 d1071 transistor transistor d774 transistor NEC D 882 p transistor D798 D774 transistor D1547 TRANSISTOR d1677 TRANSISTOR D405

    transistor ne425s01

    Abstract: NEC Ga FET marking L C10535E NE425S01 NE425S01-T1 NE425S01-T1B NEC Ga FET marking C
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE425S01 NE425S01 NE425S01-T1B NE425S01-T1 transistor ne425s01 NEC Ga FET marking L C10535E NE425S01-T1 NE425S01-T1B NEC Ga FET marking C

    low noise, hetero junction fet

    Abstract: NE325S01 NEC Ga FET marking L C10535E NE325S01-T1 NE325S01-T1B TRANSISTOR 318 NEC Ga FET marking A ne325
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE325S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE325S01 NE325S01 NE325S01-T1B NE325S01-T1 low noise, hetero junction fet NEC Ga FET marking L C10535E NE325S01-T1 NE325S01-T1B TRANSISTOR 318 NEC Ga FET marking A ne325

    JANTX 2N3735

    Abstract: 2n3735
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3737 2N3735L 2N3737UB JAN


    Original     		PDF MIL-PRF-19500/395 2N3735 2N3737 2N3735L 2N3737UB 2N3735, T4-LDS-0173 JANTX 2N3735 2n3735

    2N3735

    Abstract: 2N3735L 2N3737 2N3737UB
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3737 2N3735L 2N3737UB JAN


    Original     		PDF MIL-PRF-19500/395 2N3735 2N3737 2N3735L 2N3737UB 2N3735, T4-LDS-0173 2N3735 2N3735L 2N3737 2N3737UB

    t039 package transistor pin mount

    Abstract: 2n3440 2n3440 equivalent
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN LOW POWER SILICON TRANSISTOR


    Original     		PDF MIL-PRF-19500/368 2N3439 2N3439L 2N3439UA 2N3440 2N3440L 2N3440UA 2N3439UA, 2N3440UA) T4-LDS-0022 t039 package transistor pin mount 2n3440 2n3440 equivalent

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/512 DEVICES LEVELS 2N4029 2N4033 2N4033UA 2N4033UB


    Original     		PDF MIL-PRF-19500/512 2N4029 2N4033 2N4033UA 2N4033UB 2N4029 T4-LDS-0157

    mp02907

    Abstract: P0290
    Text: MPQ2906 MPQ2907,A* M A X IM U M RATINGS Rating Symbol C o lle cto r-E m itte r Voltage M P 029 06 M PQ2907A MPQ2907 -4 0 VCEO -6 0 Vdc Vdc C ollector-B ase Voltage VCBO 60 Em itter-Base V o ltage vebo - 5 .0 Vdc <C -6 0 0 m A dc C o lle ctor C urrent — C ontinuous


    OCR Scan     		PDF MPQ2906 MPQ2907 PQ2907A O-116 MPQ2907A mp02907 P0290

    NEC Ga FET

    Abstract: Nec K 872 NE325S01 AM/SSC 9500 ic data
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for DBS


    OCR Scan     		PDF NE325S01 NE325S01 NE325S01-T1 NE325S01-T1B IR30-00 NEC Ga FET Nec K 872 AM/SSC 9500 ic data

    NEC k 2134 transistor

    Abstract: nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612
    Text: PRELIMINARY DATA SHEET_ M F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm


    OCR Scan     		PDF NE24283B NE24283B NEC k 2134 transistor nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612

    Transistor D 1881

    Abstract: No abstract text available
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high m obility electrons. Its excellent


    OCR Scan     		PDF NE425S01 NE425S01 Transistor D 1881

    2n3499

    Abstract: No abstract text available
    Text: RAYTHEON/ SEM ICO ND UC TO R T4 CC □□□5551 SMALL SIGNAL TRANSISTORS PRODUCT SPECIFICATIONS RAYTHEON. DËÏ7ST73bD High Voltage General Purpose Amplifiers and Switches NPN Description Popular Types General purpose am plifier and switch for high voltage applications. The


    OCR Scan     		PDF 7ST73bD 2N3501/JAN 2N3500/JAN 2N3499/JAN 2N3498/JAN 2N3440 Min00 508BSC 100BSC 200BSC 2n3499

    j1 3009

    Abstract: No abstract text available
    Text: european space agency agence spatiale européenne Pages 1 to 51 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS SILICON GATE, STATIC, 64K 8192 x 8 BIT ASYNCHRONOUS RANDOM ACCESS MEMORY WITH 3-STATE OUTPUTS, BASED ON TYPE HM65664 ESA/SCC Detail Specification No. 9301/029


    OCR Scan     		PDF HM65664 j1 3009

    WJ-CA81-1

    Abstract: WJ-A81-1 612025 ja81 TRANSISTOR 2N 4401
    Text: uuU A81-1 /SMA81-1 20 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: >30 dB TYP. LOW NOISE: 2.4 dB (TYR) HIGH GAIN: 25 dB (TYR) HIGH LEVEL OUTPUT: +13.5 dBm (TYR) Outline Drawings A81-1 Specifications”


    OCR Scan     		PDF A81-1 /SMA81-1 A81-1 50-ohm 17TC/W 1-800-WJ1-4401 WJ-CA81-1 WJ-A81-1 612025 ja81 TRANSISTOR 2N 4401

    transistor NEC D 822 P

    Abstract: nec gaas fet marking NEC Ga FET transistor ne425s01
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high m obility electrons. Its excellent


    OCR Scan     		PDF NE425S01 NE425S01 NE425S01-T1 transistor NEC D 822 P nec gaas fet marking NEC Ga FET transistor ne425s01

    WJ-A81-1

    Abstract: SMA81-1 WJ-A81
    Text: WJ-A81-1 /SMA81-1 20 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: >30.0 dB TYP. LOW NOISE: 2.5 dB (TYP.) HIGH GAIN: 24.5 dB (TYP.) HIGH EFFICIENCY: 25 mA @ +15 VDC (TYP.) \ • ' : *i * *. ' - ' a ' , ' . im* t :


    OCR Scan     		PDF WJ-A81-1 /SMA81-1 A81-1 00071SÛ SMA81-1 WJ-A81

    nec a 634

    Abstract: Nec K 872 NEC Ga FET C band FET transistor s-parameters NEC 1132 NEC Ga FET marking D
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for DBS


    OCR Scan     		PDF NE325S01 NE325S01 NE325S01-T1 nec a 634 Nec K 872 NEC Ga FET C band FET transistor s-parameters NEC 1132 NEC Ga FET marking D

    transistors 505

    Abstract: 2N3868 2N6303
    Text: 2N3867 2N3868 2N6303 PNP 3 AMP POWER TRANSISTORS GEOMETRY 505 •HIGH SPEED »VCEO sus to 80V »HIGH IT m a x im u m ratin g s ' PARAMETER SYMBOL 2N3S67 2N3868 80 Collector Emitter Voltage VCEO Collector Base Voltage VCBO 45 65 80 Emitter Base Voltage VEBO


    OCR Scan     		PDF 2N3867 2N3868 2N6303 2N3S67 2N6303 transistors 505