bzy93c12r
Abstract: No abstract text available
Text: Naina Semiconductor Ltd. BZY93 Series 20W Zener Diodes Features • • • • • • • • Voltage Range 7.5 – 75 Volts Glass passivated junction 20 Watt steady state @ 75oC 1500 Watt peak pulse power Operating temperature -55oC to +175oC Good clamping ability
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BZY93
-55oC
175oC
DO-203AA
bzy93c12r
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BZY 40
Abstract: No abstract text available
Text: PRELIMINARY 56F6408 512 Megabit Flash NOR PINOUT WP# Memory Functional Block Diagram FEATURES: DESCRIPTION: • Single Power Supply Operation Maxwell Technologies 56F6408 high density, 3.3V, 512 Megabit Flash Memory device, features a greater than 100Krads Si total dose tolerance,
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56F6408
56F6408
100Krads
BZY 40
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transistor 6bw
Abstract: PCF50633 PCF50 Ericsson Battery Backup System
Text: Power management unit with battery-charger PCF50633 longer battery life and smaller footprint in media players and other portable devices Optimized for use in media players and other portable applications, this small highly-integrated power management unit PMU enables complete, system-level
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PCF50633
HVQFN68
FLSTNPOWER1108
transistor 6bw
PCF50
Ericsson Battery Backup System
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Untitled
Abstract: No abstract text available
Text: OPA2889 OP A2 889 OP A28 89 www.ti.com . SBOS373B – JUNE 2007 – REVISED AUGUST 2008 Dual, Low-Power, Wideband, Voltage-Feedback
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OPA2889
SBOS373B
60MHz
OPA2889
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Untitled
Abstract: No abstract text available
Text: OPA2889 OP A2 889 OP A28 89 www.ti.com . SBOS373B – JUNE 2007 – REVISED AUGUST 2008 Dual, Low-Power, Wideband, Voltage-Feedback
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OPA2889
SBOS373B
60MHz
OPA2889
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Untitled
Abstract: No abstract text available
Text: OPA2889 OP A2 889 OP A28 89 www.ti.com . SBOS373B – JUNE 2007 – REVISED AUGUST 2008 Dual, Low-Power, Wideband, Voltage-Feedback
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OPA2889
SBOS373B
60MHz
OPA2889
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RESISTOR CR25 philips
Abstract: philips resistor CR25 hp778d pm5171 BZY 56 cr25 philips RESISTOR CR25 BLV33F 2222-809-05002 tv schematic diagram PHILIPS
Text: APPLICATION NOTE A wide-band class-A linear power amplifier 174 − 230 MHz with 2 transistors BLV33F ECO8005 Philips Semiconductors A wide-band class-A linear power amplifier (174 − 230 MHz) with 2 transistors BLV33F CONTENTS 1 ABSTRACT 2 INTRODUCTION
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BLV33F
ECO8005
SCA57
RESISTOR CR25 philips
philips resistor CR25
hp778d
pm5171
BZY 56
cr25 philips
RESISTOR CR25
BLV33F
2222-809-05002
tv schematic diagram PHILIPS
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BZY 100
Abstract: BZy 120 bzy 79 bzy 150 5 w zener bzy Zener BZY 97 ZENER bzy bzy 5v6 Zener BZY 32 zener 6v8
Text: «i zener diodes diodes zener 1H0MS0N-CSF Types Vzj/IZT* min max BZY 97 C 3V3 BZY 97 C 3V6 BZY 97 C 3V9 BZY 97 C 4V3 BZY 97 C 4V7 BZY 97 C 5V1 BZY 97 C 5V6 BZY 97 C 6V2 BZY 97 C 6V8 BZY 97 C 7V5 BZY 97 C 8V2 BZY 97 C 9V1 BZY 97 C 10 BZY 97 C 11 BZY 97 C 12
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ZENER bzy
Abstract: bzy 79 bzy 150 Zener BZY 32 bzy 200 BZy 120 bzy 6v2 5 w zener bzy bzy 50 BZY 100
Text: F Z 7 SGS-THOMSON * 7 # Rfl0 DB ilLS SirBB@»R90(SS GENERAL PURPOSE & INDUSTRIAL ZENER DIODES STANDARD ZENER DIODES Type * Pulse test 'ZT* (V (iî) (mA) H* BZY 97 C 3V3 BZY 97 C 3V6 BZY 97 C 3V9 BZY 97 C 4V3 BZY 97 C 4V7 P BZY 97 C 5V1 P BZY 97 C 5V6 P BZY 97 C 6V2
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10-4/oQ
ZENER bzy
bzy 79
bzy 150
Zener BZY 32
bzy 200
BZy 120
bzy 6v2
5 w zener bzy
bzy 50
BZY 100
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BZY85C
Abstract: DIODE BZy 83 bzy85 c15 bzy85 BZY85C15 BZY85/C15 C8V2 DIODE BZY83/C5V6 C24 06 85 d8v2
Text: BZY83C, BZY83D, BZY85C, BZY85D Silicon Z-diodes Silicon Z-diodes type BZY 83 and BZY 85 are available w ith 5% tolerance C and 10% tolerance (D). BZY 83 is provided w ith a metal case 1 A 2 DIN 41871 and may be operated in free air as well as mounted on a chassis w ith a cooling fin (heat
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BZY83C,
BZY83D,
BZY85C,
BZY85D
83/C4V7
83/C5V1
BZY83/C5V6
83/C6V2
83/C6V8
BZY83/C7V5
BZY85C
DIODE BZy 83
bzy85 c15
bzy85
BZY85C15
BZY85/C15
C8V2 DIODE
C24 06 85
d8v2
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BZY83
Abstract: DIODE BZy 83 BZY85C BZY 56 bzy85 c15 BZY83/C5V6 BZY83C BZY 100 BLY83 C5V1
Text: BZY83C, BZY83D, BZY85C, BZY85D Silicon Z-diodes Silicon Z-diodes type BZY 83 and BZY 85 are available w ith 5% tolerance C and 10% tolerance (D). BZY 83 is provided w ith a metal case 1 A 2 DIN 41871 and may be operated in free air as well as mounted on a chassis w ith a cooling fin (heat
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BZY83C,
BZY83D,
BZY85C,
BZY85D
83/C4V7
83/C5V1
BZY83/C5V6
83/C6V2
83/C6V8
BZY83/C7V5
BZY83
DIODE BZy 83
BZY85C
BZY 56
bzy85 c15
BZY83C
BZY 100
BLY83
C5V1
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BZY87
Abstract: bzy 150 5V stabilisator BZY 100 74127 H7 RF bzy 50 bzy 130
Text: BZY 87/. 'W Silizium-Diffusions-Stabilisator-Dioden Silicon diffusion voltage stabilising diodes Anwendungen: Spannungsstabilisierung und Spannungsbegrenzung Applications: Voltage stabilisation and voltage regulation Abmessungen in mm Dimensions in mm 0 2 .6
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BZY87/.
U-26-Â
87/1V
BZY87
bzy 150
5V stabilisator
BZY 100
74127
H7 RF
bzy 50
bzy 130
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Z783
Abstract: bipolar zener BZY93C6V8 Z7B30 BZY93C7V5 BZY93C1B BZY93C12 BS9305-F080 9305-F-080 Z765
Text: 43E D • 013700^ GGDDlbl 3 ■ S L C B SEfllTRON INDUSTRIES LTD BZY 93 /Z 7 SERIES - -«-«. t Hermetically Sealed Packaged ■Voltage Regulator Diode Released to BS9305-F080 ■Voltage Range 3.0 to 400 Volts 25 Watt Steady State ■1500 Watt Peak Power APPLICATIONS
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BH93/Z1
BS9305-F080
9305-F-080
Z78UQ
Z7B200
Z7B400
Z783
bipolar zener
BZY93C6V8
Z7B30
BZY93C7V5
BZY93C1B
BZY93C12
BS9305-F080
Z765
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ZENER bzy
Abstract: bzy 79 BZY97C bzy 150 Zener 4v7 bzy 6v2 bzy 53 Zener BZY 97 BZY 40 ZENER 3v3
Text: SbE D • 7 T ET S3 7 O G H l iT l 7GT ■ S6TH rZJ SCS-THOMSON f^7# MffiMilLiOTaiaaes BZY 97 C 3V3 TW/-/5* 200 S G S- T H O M S O N ZENER DIODES VOLTAG E RANGE: 3.3V TO 200V HER M ETICALLY SEALED PLASTIC CASE PACKAGE ACCORDING TO NORMALIZATION CCTU : F 126
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7TETS37
Valu102
ZENER bzy
bzy 79
BZY97C
bzy 150
Zener 4v7
bzy 6v2
bzy 53
Zener BZY 97
BZY 40
ZENER 3v3
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BZY85C12
Abstract: BZY85C bzy85c24 BZY83C7V5 BZY85C9V1 BZY83 BZY-83C15 bzy85 BZY83C15 BZY85C10
Text: ~B3 • fenwal electron Ic s /a p d DE § 3 S m S t . 3 - ? 3? OQDCnDS 3 00905 D f Y- I f-<*7 ZENER DIODES DO-35 Case DO-35 Case Z50mW N om inal Z a n er V oltag e V z @ Izr V Typet BZY83C6V8 BZY83C7V5 BZY83C8V2 B ZY 8 3 C 9 V 1 BZY83C10 BZY83D10 BZY 8 3 C 1 1
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DO-35
250mW
BZY83C6V8
BZY83C7V5
BZY83C8V2
BZY83C9V1
BZY83C10
BZY83D10
BZY85C12
BZY85C
bzy85c24
BZY85C9V1
BZY83
BZY-83C15
bzy85
BZY83C15
BZY85C10
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15 BZX
Abstract: BZY 100 bzx c 1v4 bzx c27 bzy 200 85C36 bzx 2v1
Text: Diodes Z diodes BZX 8 5 / . . . ' Type Pv = 1.3 W t/z Fig. Nr. 21 V and 10'4/°C ano 'zj at O >Z mA 'zj a* O >Z mA / R at ma ÜR V 1 BZX 8 5 /C 2 V 7 2.5.2.9 -8 .-5 < 20 80 <400 1 < 150 BZX 8 5 /C 3 V 0 2 .8 .3 2 -8 .-5 < 20 80 <400 1 < 100 1 BZX 8 5 /C 3 V 3
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87/0V7
BZY87/1V4
87/2V1
87/2V8
87/3V4
15 BZX
BZY 100
bzx c 1v4
bzx c27
bzy 200
85C36
bzx 2v1
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IC 7447
Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Text: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222
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IAO5 Sharp
Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The
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Q60103-
thS10
to3530
to4600
to4600
IAO5 Sharp
free transistor equivalent book 2sc
siemens transistor asy 27
Diode BAY 61
TRANSISTOR BJ 131-6
tesla typ 202 thyristor
Tesla
z1072
HALL EFFECT 21E
z1071
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bzy39
Abstract: BZY 100 BZY120 BZY150 bzy27 ZENER bzy bzy3 BZY 32 W136 bzy 150
Text: FAGOR i S7E ] • 345^325 0QGQ7SS 715 M F GRS BZY97C7V5 BZY97C200V FAGOR ELECTRONICS Dimensions in nun. D O -15 F-126 58 A 2 Plastic) Voltage 7.5 to 200 V Power 1.5 W Mounting instructions 1. Mm. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.
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BZY97C7V5
BZY97C200V
F-126
DO-201AD
DO-27A
--------------DO-201AE
DO-201
DO-201AE
bzy39
BZY 100
BZY120
BZY150
bzy27
ZENER bzy
bzy3
BZY 32
W136
bzy 150
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VR525F
Abstract: VR625F VR575F vr13e VR10F C6V3 VR475F VR425F vr22 vr62
Text: V R T Series 2 25VV 3 5V to 30V ± 5% Nomina! Tamb = 25°C unless otherwise stated Differential resistance W orking voltage Type Number VR35F VR425F VR475F VR525F VR575F VR625F VR7F VR8F VR9F VR1 OF V R 11 F VR1 2 F VR1 3F VR15F VR16F VR13F VR20F VR22F
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VR35F
VR425F
VR475F
VR525F
VR575F
VR625F
VR10F
-43-2-min.
BS3934
SO-16
vr13e
C6V3
vr22
vr62
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OT239
Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Text: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to
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BZY91
Abstract: BS9305 BZY91-C75 BZY91-C75R BZY91-C7V5 BZY91-C7V5R 15c20
Text: M A IN T E N A N C E T Y P E BZY91 SERIES T - Q | -/ < ? PHILIPS INTERNATIONAL 5 bE D 711002b DOmbfiE ^30 • PHIN REGULATOR DIODES Also available to BS9305—F052 A range of diffused silicon diodes in DO-5 metal envelopes, intended for use as voltage regulator and
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BZY91
BS9305â
BZY91-C7V5
BZY91-C75.
BZY91-C7V5R
BZY91-C75R.
711002b
0D41bÃ
BS9305
BZY91-C75
BZY91-C75R
15c20
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bpx28
Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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